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公开(公告)号：US20140302366A1
公开(公告)日：2014-10-09
申请号：US14343198
申请日：2012-09-14
IPC分类号： H01M2/26 , H01M10/0587
CPC分类号： H01M2/263 , H01M4/70 , H01M10/0587 , Y02E60/122
摘要： A nonaqueous electrolyte secondary battery includes: an electrode group including a positive electrode plate, a negative electrode plate, and a separator. The positive and negative electrode plates are wound with the separator interposed therebetween. The positive electrode plate includes a first current collector exposed portion where a portion of the positive electrode current collector corresponding to an outermost portion of the electrode group is exposed over a length of greater than or equal to one turn in a winding direction of the electrode group, and a second current collector exposed portion where a portion of the positive electrode current collector corresponding to a middle portion of the electrode group is exposed over a length of greater than or equal to one turn in the winding direction. A positive electrode lead is provided on the second current collector exposed portion so as to be connected to an external electrode.
摘要翻译： 非水电解质二次电池包括：包括正极板，负极板和隔膜的电极组。 正极板和负极板之间夹有隔膜。 正极板包括：第一集电体露出部，其中对应于电极组的最外部分的正极集电体的一部分在电极组的卷绕方向上暴露在大于或等于一匝的长度上 以及第二集电体露出部，其中与电极组的中间部对应的正极集电体的一部分在卷绕方向上暴露在大于或等于一匝的长度上。 正极引线设置在第二集电体露出部分上，以连接到外部电极。
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公开(公告)号：US07446391B2
公开(公告)日：2008-11-04
申请号：US11326520
申请日：2006-01-06
IPC分类号： H01L21/20
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/004 , G11C2013/0054 , G11C2213/31 , G11C2213/71 , G11C2213/79 , H01L27/105 , H01L27/1052 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： An electro-resistance element that has a different configuration from conventional elements and shows outstanding resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values are different, and is switchable from one of the two or more states into another by application of a predetermined voltage or current. The electro-resistance element includes: a multilayer structure including an upper electrode, a lower electrode, and an electro-resistance layer sandwiched by the electrodes, the multilayer structure disposed on a substrate; wherein the electro-resistance layer has a spinel structure, and a surface of the lower electrode that faces the electro-resistance layer is oxidized. The electro-resistance element can be manufactured by a manufacturing process at 400° C. or lower.
摘要翻译： 提供了具有与常规元件不同的构造并且显示出优异的电阻变化特性的电阻元件。 电阻元件具有两个或多个电阻值不同的状态，并且可以通过施加预定的电压或电流从两个或更多个状态之一切换到另一个状态。 电阻元件包括：多层结构，其包括上电极，下电极和夹在电极之间的电阻层，所述多层结构设置在基板上; 其中所述电阻层具有尖晶石结构，并且所述下电极的面向所述电阻层的表面被氧化。 电阻元件可以通过在400℃以下的制造工艺制造。
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43.发明授权公开(公告)号：US07317159B2
公开(公告)日：2008-01-08
申请号：US11194698
申请日：2005-08-02
IPC分类号： H01L35/32
CPC分类号： H01L35/32
摘要： The present invention provides a thermoelectric conversion element that has high efficiency even at reduced thickness. In this thermoelectric conversion element, striped p-type thermoelectric conversion parts are arranged on one surface of an insulating layer, and striped n-type thermoelectric conversion parts are arranged on the other surface. The two sets of stripes form overlapped portions. At one or more of the overlapped portions, a first p-type thermoelectric conversion part and a first n-type thermoelectric conversion part are electrically connected via a first conducting portion arranged within the insulating layer, a second p-type thermoelectric conversion part and a second n-type thermoelectric conversion part are electrically connected via a second conducting portion arranged within the insulating layer, and the first conducting portion and the second conducting portion are electrically isolated. The element of the present invention provides two junctions in a region where a conventional element would provide only one junction.
摘要翻译： 本发明提供即使在减小的厚度下也具有高效率的热电转换元件。 在该热电转换元件中，在绝缘层的一个表面上配置有条纹p型热电转换部，在另一面上配置有条纹状的n型热电转换部。 两组条纹形成重叠部分。 在一个或多个重叠部分中，第一p型热电转换部分和第一n型热电转换部分经由布置在绝缘层内的第一导电部分，第二p型热电转换部分和 第二n型热电转换部分经由布置在绝缘层内的第二导电部分电连接，并且第一导电部分和第二导电部分电隔离。 本发明的元件在常规元件仅提供一个结的区域中提供两个结。
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44.发明申请公开(公告)号：US20060050549A1
公开(公告)日：2006-03-09
申请号：US11267198
申请日：2005-11-07
申请人： Hideaki Adachi , Yasunari Sugita , Akihiro Odagawa
发明人： Hideaki Adachi , Yasunari Sugita , Akihiro Odagawa
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625 , H01L45/1675
摘要： A electro-resistance element with good heat treatment stability under a hydrogen-containing atmosphere and a electro-resistance memory with good resistance change characteristics and productivity are provided. The electro-resistance element has two or more states in which electric resistance values are different, and is switchable from one of the states selected from the two or more states into another by application of a predetermined voltage or current. The electro-resistance element includes a pair of electrodes, and an oxide semiconductor layer sandwiched by the pair of electrodes and having a perovskite structure, and the conductivity type of the oxide semiconductor layer is n-type. The electro-resistance memory is provided with the electro-resistance element.
摘要翻译： 提供了在含氢气氛下具有良好的热处理稳定性的电阻元件和具有良好的电阻变化特性和生产率的电阻记忆体。 电阻元件具有电阻值不同的两个以上的状态，并且可以通过施加预定的电压或电流从从两个或更多个状态中选择的状态中的一个切换到另一状态。 电阻元件包括一对电极和由一对电极夹持并具有钙钛矿结构的氧化物半导体层，氧化物半导体层的导电类型为n型。 电阻存储器设置有电阻元件。
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45.发明申请公开(公告)号：US20050178424A1
公开(公告)日：2005-08-18
申请号：US11103525
申请日：2005-04-12
CPC分类号： H01L35/32 , H01L35/22 , H01L35/34 , Y10S117/915
摘要： It is often the case that a substrate suitable for epitaxial growth does not match a substrate desirable for the use in functional elements such as thermoelectric conversion elements or the like. The present invention makes it possible to separate a predetermined layered structure formed on a substrate therefrom through an action of water vapor. A method of manufacturing a crystalline film of the present invention includes the steps of: epitaxially growing on a substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate; contacting water vapor supplied from a water vapor source with the layered structure in a chamber; and separating the layered structure that has been contacted with the water vapor from the substrate to obtain the crystalline film. The layered structure has a layer containing an alkali metal, and a layer containing an oxide of at least one element selected from the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.
摘要翻译： 通常情况下，适合于外延生长的衬底与用于诸如热电转换元件等的功能元件所需的衬底不匹配。 本发明使得可以通过水蒸汽的作用将形成在其上的基板上的预定层叠结构分离。 制造本发明的结晶膜的方法包括以下步骤：在衬底上外延生长包括层状结构的结晶膜，使得层状结构与衬底接触; 使从水蒸汽源供应的水蒸气与室中的层状结构接触; 并且从基板分离已经与水蒸气接触的层状结构，得到结晶膜。 层状结构具有包含碱金属的层和含有选自Co，Fe，Ni，Mn，Ti，Cr，V，Nb和Mo中的至少一种元素的氧化物的层。
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46.发明授权公开(公告)号：US06917492B2
公开(公告)日：2005-07-12
申请号：US10611224
申请日：2003-06-27
申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
发明人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F41/307 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T29/49034
摘要： A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100-zRz at the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a+b+c=100, a≧30, x+y=100, 0
摘要翻译： 磁阻元件包括一对铁磁层和布置在铁磁层之间的非磁性层。 铁磁层中的至少一个具有由（M×××××××××××××××××××××××××××composition composition z SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >在与非磁性层的界面处。 非磁性层包括选自B，C，N，O和P中的至少一种元素。这里，M是Fe L是选自Pt，Pd，Ir和Rh中的至少一种元素，R是具有较低自由能以与非金属元素形成化合物的元素， 磁性层是选自B，C，N，O和P中的至少一种，除了组合物中包含的任何其它元素为M或L，以及a，b，c，x，y和 z满足a + b + c = 100，a> = 30，x + y = 100,0
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公开(公告)号：US06708390B2
公开(公告)日：2004-03-23
申请号：US10421989
申请日：2003-04-23
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044
摘要： The present invention provides a magnetoresistive element that can suppress the characteristic degradation even after high-temperature heat treatment, specifically at 400° C. to 450° C. This element is manufactured by a method that includes the following processes in the indicated order: a film formation process for forming at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer on a substrate; a preheat process at 330° C. to 380° C. for not less than 60 minutes; and a heat treatment process at 400° C. to 450° C. This element has a resistance value that changes with a change in relative angle formed by the magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer.
摘要翻译： 本发明提供即使在高温热处理后，特别是在400℃〜450℃也能够抑制特性劣化的磁阻元件。该元件通过以下顺序制造方法：以下述方式制造：a 用于在基板上形成至少第一铁磁层，第二铁磁层和非磁性层的成膜工艺; 在330℃至380℃下预热不少于60分钟; 以及在400℃至450℃的热处理过程。该元件具有随着由第一铁磁层和第二铁磁层的磁化方向形成的相对角度的变化而变化的电阻值。
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48.发明授权公开(公告)号：US06686071B2
公开(公告)日：2004-02-03
申请号：US09873753
申请日：2001-06-04
申请人： Hiroshi Sakakima , Hideaki Adachi , Mitsuo Satomi , Yasuhiro Kawawake , Yasunari Sugita , Kenji Iijima
发明人： Hiroshi Sakakima , Hideaki Adachi , Mitsuo Satomi , Yasuhiro Kawawake , Yasunari Sugita , Kenji Iijima
IPC分类号： G11B566
CPC分类号： G11B5/66 , G11B5/82 , G11B2005/0002 , G11B2005/001 , Y10S428/90 , Y10T428/115 , Y10T428/12465
摘要： A magnetic recording medium includes a magnetic film for signal recording and a film containing M2Oy as a main component that is magnetically exchange-coupled to the magnetic film to increase the effective V and Ku of the magnetic film and to suppress thermal fluctuation. Herein, M is at least one element selected from Fe, Co, Ni, alkaline earth elements, Y, lanthanoids and Bi and includes at least one selected from Fe, Co and Ni as an essential element, and y is a value satisfying 2.8
摘要翻译： 磁记录介质包括用于信号记录的磁性膜和含有M 2 O y作为主要成分的膜，该膜与磁性膜磁交换耦合，以增加磁性膜的有效V和Ku并抑制热波动。 这里，M是选自Fe，Co，Ni，碱土金属元素，Y，镧系元素和Bi中的至少一种元素，并且包括选自Fe，Co和Ni中的至少一种作为必需元素，y是满足2.8 < Y <3.2。
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49.发明授权Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film 有权交换耦合膜，磁阻效应器件，磁阻有效头和用于生产交换耦合膜的方法公开(公告)号：US06562486B2
公开(公告)日：2003-05-13
申请号：US09834716
申请日：2001-04-13
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
摘要： An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8
摘要翻译： 本发明的交换耦合膜包括铁磁层和钉扎层，该钉扎层与铁磁层接触以固定铁磁层的磁化方向，钉扎层包括（AB）2Ox层，其中：O表示 氧原子; 2.8
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