公开(公告)号：US09172851B2

公开(公告)日：2015-10-27

申请号：US13978792

申请日：2012-01-09

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H04N3/14 ,  H01L27/146 ,  H04N5/372 ,  H04N5/374

CPC classification number: H04N3/1525 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H04N3/155 ,  H04N5/37206 ,  H04N5/3743

Abstract: Time delay and integration sensor comprising a matrix of photosensitive pixels organized in rows and columns. Each pixel of a column comprises a photosensitive element, a storage node, and a first transfer transistor connecting the photosensitive element to the storage node. Each pixel of a column, except for the last one, further comprises a second transfer transistor which connects the storage node of the pixel to the photosensitive element of the next pixel of the column. The two transfer transistors are connected to be active at the same time. With such a configuration, it is possible to define a sliding group of several consecutive pixels in a column, to expose the group of pixels, to aggregate the information of the pixels of the group, and to start again after shifting the group of pixels by one pixel.

Abstract translation: 时间延迟和积分传感器包括以行和列组织的感光像素矩阵。 列的每个像素包括感光元件，存储节点和将感光元件连接到存储节点的第一传输晶体管。 除了最后一个之外，列的每个像素还包括将像素的存储节点连接到列的下一个像素的感光元件的第二传输晶体管。 两个传输晶体管被连接成同时有效。 通过这样的配置，可以在列中定义几个连续像素的滑动组，以露出该组像素，聚集该组的像素的信息，并且在将该组像素移位之后再次开始 一个像素

公开(公告)号：US08735953B2

公开(公告)日：2014-05-27

申请号：US12551715

申请日：2009-09-01

Applicant: Pierre Gidon ,  Yvon Cazaux

Inventor： Pierre Gidon ,  Yvon Cazaux

IPC: H01L31/062

CPC classification number: H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685

Abstract: An image sensor comprising at least: CMOS-type photodiodes and transistors produced in a semiconductor layer having a thickness of between approximately 1 μm and 1.5 μm, a dielectric layer in which electrical interconnect layers are made, which are electrically connected to one another and/or to the CMOS photodiodes and/or transistors, said dielectric layer being arranged against a first face of the semiconductor layer opposite a second face of the semiconductor layer through which the light received by the sensor from the exterior is intended to enter, light-reflecting means arranged in the dielectric layer, opposite the photodiodes, and capable of reflecting at least a portion of the light received by the sensor towards the photodiodes.

Abstract translation: 一种图像传感器，至少包括：CMOS型光电二极管和在厚度为约1μm至1.5μm之间的半导体层中制造的晶体管，形成电互连层的电介质层，其彼此电连接和/ 或所述CMOS光电二极管和/或晶体管，所述电介质层被布置成抵靠所述半导体层的与所述半导体层的第二面相反的第一面，所述传感器从外部接收的光将通过所述第二面进入，反射 布置在电介质层中的与光电二极管相对的装置，并且能够将由传感器接收的光的至少一部分反射到光电二极管。

公开(公告)号：US20120119264A1

公开(公告)日：2012-05-17

申请号：US13319782

申请日：2010-05-11

Applicant: Yvon Cazaux ,  Benoít Giffard

Inventor： Yvon Cazaux ,  Benoít Giffard

IPC: H01L31/112

CPC classification number: H01L27/14818 ,  H01L27/14609 ,  H01L27/14843

Abstract: A basic device for an image sensor includes a photodiode consisting of a doped area having a first type of conductivity and formed at the surface of a semiconductor substrate having a second type of conductivity, adapted to be biased at a first reference voltage, wherein the photodiode is combined with a device for the transfer, multiplication and insulation of charges, the photodiode being a fully depleted one and including, at the surface of the doped area having a first type of conductivity, a strongly doped region having the second type of conductivity and adapted to be biased at a second reference voltage.

Abstract translation: 用于图像传感器的基本装置包括光电二极管，该光电二极管由具有第一类型导电性的掺杂区域形成，并形成在具有第二类型导电性的半导体衬底的表面上，该半导体衬底适于以第一参考电压偏置，其中光电二极管 与用于电荷的传输，乘法和绝缘的器件组合，所述光电二极管是完全耗尽的器件，并且在具有第一类型导电性的掺杂区域的表面处包括具有第二类型导电性的强掺杂区域，以及 适于被偏置在第二参考电压。

公开(公告)号：US20120112247A1

公开(公告)日：2012-05-10

申请号：US13319895

申请日：2010-05-11

Applicant: Yvon Cazaux ,  Benoît Giffard

Inventor： Yvon Cazaux ,  Benoît Giffard

IPC: H01L27/148

CPC classification number: H01L27/1485 ,  H01L27/14609 ,  H01L27/1464

Abstract: A basic device for an image sensor includes a photogeneration and charge-collecting region formed at the surface of a semiconductor substrate having a first type of conductivity, adapted to be biased at a reference voltage, the photogeneration region being associated with a device for the transfer, multiplication, and insulation of charges. The photogeneration region has an insulated gate mounted thereon, which is adapted to be alternately biased at a first voltage and at a second voltage, the insulated gate being made of a low-absorption material.

Abstract translation: 用于图像传感器的基本装置包括形成在具有第一类型导电性的半导体衬底的表面上的光生电荷和电荷收集区域，其适于偏置在参考电压，光生区域与用于转移的装置相关联 ，乘法和电荷绝缘。 光电产生区域具有安装在其上的绝缘栅极，其适于在第一电压和第二电压处交替地偏置，绝缘栅极由低吸收材料制成。

公开(公告)号：US08153947B2

公开(公告)日：2012-04-10

申请号：US12350677

申请日：2009-01-08

Applicant: Frédéric Barbier ,  Yvon Cazaux

Inventor： Frédéric Barbier ,  Yvon Cazaux

IPC: H01L27/00

CPC classification number: H04N5/3559 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14641 ,  H04N5/359 ,  H04N5/361 ,  H04N5/37452

Abstract: An image sensor formed of an array of pixels, each pixel including a photodiode coupled between a first reference voltage and a first switch, the first switch being operable to connect the photodiode to a first node; a capacitor arranged to store a charge accumulated by the photodiode, the capacitor being coupled between a second reference voltage and a second node; a second switch coupled between the first and second nodes, the second switch being operable to connect the capacitor to the first node; and read circuitry coupled for reading the voltage at the second node.

Abstract translation: 由像素阵列形成的图像传感器，每个像素包括耦合在第一参考电压和第一开关之间的光电二极管，所述第一开关可操作以将光电二极管连接到第一节点; 电容器，被布置成存储由所述光电二极管累积的电荷，所述电容器耦合在第二参考电压和第二节点之间; 耦合在所述第一和第二节点之间的第二开关，所述第二开关可操作以将所述电容器连接到所述第一节点; 并读取电路，用于读取第二节点处的电压。

公开(公告)号：US20100102206A1

公开(公告)日：2010-04-29

申请号：US12606139

申请日：2009-10-26

Applicant: Yvon Cazaux ,  Jérôme Vaillant

Inventor： Yvon Cazaux ,  Jérôme Vaillant

IPC: H01L31/101 ,  H01L27/146

CPC classification number: H01L27/14647 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14652

Abstract: A near infrared/color photodetector made in a monolithic form in a lightly-doped substrate of a first conductivity type covering a holder and comprising a face on the side opposed to the holder. The photodetector includes at least first and second photodiodes for the storage of electric charges photogenerated in the substrate, the second photodiode being adjacent to said face; and a first region extending at least between the second photodiode and the holder, preventing the passage of said charges between a first substrate portion being located between said region and the holder and a second substrate portion extending between said face and the first region, the first photodiode being adapted to store at least charges photogenerated in the first substrate portion and the second photodiode being adapted to store charges photogenerated in the second substrate portion.

Abstract translation: 一种在第一导电类型的轻掺杂衬底中以整体形式制成的近红外/彩色光电探测器，其覆盖保持器并且包括在与保持器相对的一侧上的面。 光电检测器至少包括用于存储在基板中产生的电荷的第一和第二光电二极管，第二光电二极管与所述面相邻; 以及至少在所述第二光电二极管和所述保持器之间延伸的第一区域，防止所述电荷在位于所述区域和所述保持器之间的第一衬底部分之间通过，以及在所述面和所述第一区域之间延伸的第二衬底部分， 光电二极管适于至少存储在第一衬底部分中产生的电荷，第二光电二极管适于存储在第二衬底部分中产生的电荷。

公开(公告)号：US5777672A

公开(公告)日：1998-07-07

申请号：US744197

申请日：1994-04-19

Applicant: Yvon Cazaux ,  Louis Brissot ,  Bruno Gili

Inventor： Yvon Cazaux ,  Louis Brissot ,  Bruno Gili

IPC: H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H04N5/372 ,  H04N5/335

CPC classification number: H04N3/1575 ,  H01L27/14831

Abstract: In a CCD type photosensitive device, the charges produced in two consecutive columns of pixels are transferred into different reading registers: the charges from the first column are loaded into the first register and the charges from the second column travel through the first register to be loaded into the second register. The two reading registers are controlled by independent potentials during the step for the loading of these registers. The device makes it possible to increase the efficiency of the transfer between the two reading registers, especially when the registers are of the type working in a two-phase mode.

Abstract translation: 在CCD型感光装置中，在两个连续的像素列中产生的电荷被转移到不同的读取寄存器中：来自第一列的电荷被加载到第一寄存器中，并且来自第二列的电荷通过第一寄存器运行以被加载 进入第二个登记册。 在加载这些寄存器的步骤期间，两个读取寄存器由独立电位控制。 该器件可以提高两个读取寄存器之间的传输效率，特别是当寄存器类型工作在两相模式时。

公开(公告)号：US5481301A

公开(公告)日：1996-01-02

申请号：US71926

申请日：1993-06-04

Applicant: Yvon Cazaux ,  Jean-Louis Coutures ,  Pierre Dautriche ,  Gilles Boucharlat

Inventor： Yvon Cazaux ,  Jean-Louis Coutures ,  Pierre Dautriche ,  Gilles Boucharlat

IPC: H01L27/148 ,  H04N5/335 ,  H04N5/372 ,  H04N5/376 ,  H04N5/378

CPC classification number: H04N5/335 ,  H01L27/14831 ,  H04N3/1525

Abstract: A method of detecting electromagnetic radiation imparted onto a matrix of photosensitive photomos networks in which pixels of each photomos network are simultaneously exposed to electromagnetic radiation source for a predetermined period of time. Thereafter, transfer signals are applied to each photomos pixel and accumulated charges corresponding to the strength of the radiation imparted onto the pixels are transferred in a columnwise fashion to the end of each column of the photomos networks. The charges are summed at the end of the columns and placed in a reading register. The charges in the reading register of each photomos network are summed and a signal is output corresponding to the strength of the electromagnetic radiation imparted onto the photomos network.

Abstract translation: 检测施加到光敏光网络的矩阵上的电磁辐射的方法，其中每个光网络的像素同时暴露于电磁辐射源一段预定时间段。 此后，传送信号被施加到每个光像像素，并且与施加到像素上的辐射的强度对应的累积电荷以列方式传送到光电网络的每列的末端。 这些费用在列的末尾相加并放置在读取寄存器中。 将每个光网络的读取寄存器中的电荷相加，并且相应于施加到光电网络上的电磁辐射的强度输出信号。

公开(公告)号：US5114237A

公开(公告)日：1992-05-19

申请号：US602671

申请日：1990-10-24

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H04N5/372

CPC classification number: H04N5/37206 ,  H04N3/1525

Abstract: A photosensitive sensor including multilinear arrays of n lines of cells which operate by charge integration and time delay by successive observations of the same image line by the n lines in the array, and by accumulation of the corresponding n observations in the cells of the sensor.To avoid the risk of saturation inherent in the fact that the electrical charges resulting from n observations accumulate in the same cell, the number of lines between which the charge integration and delays are preformed is programmed to be between 1 and n. This programming is performed as a function of the average illumination of the image analysed. To do so, the electrodes (ES1, ES2) of certain lines of cells are used, and potentials are applied to them; either the normal charge transfer potentials or a blocking potential which isolates the lines beyond this blocking electrode from a reading stage (RL, CL).

Abstract translation: 一种光敏传感器，其包括通过电荷积分和时间延迟操作的n行单元的多线阵列，通过阵列中的n行连续观察相同的图像线，以及通过在传感器的单元中积累相应的n个观察值。 为了避免由n次观测产生的电荷累积在同一个单元中的事实固有的饱和风险，将电荷积分和延迟之间的线数量编程为1和n之间。 根据所分析的图像的平均照度来执行该编程。 为此，使用某些细胞系的电极（ES1，ES2），并向它们施加电位; 正常的电荷转移电位或阻断电位将隔离电极与读取级（RL，CL）隔离。

公开(公告)号：US4862274A

公开(公告)日：1989-08-29

申请号：US197997

申请日：1988-05-24

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H01L27/148 ,  H04N3/15 ,  H04N5/335

CPC classification number: H04N3/1568 ,  H01L27/14887

Abstract: In a photosensor with a frame transfer structure, each pixel constituting the matrix of photosensitive points is provided with a pulse-controlled MOS transistor. At the end of the frame transfer the TMOS is controlled through the electrodes, V.sub.DA and V.sub.GA, to eliminate residual charges which are present in the photosensitive zone and which are due to the transfer of empty stages corresponding to the dark zones of the image in the stages under the illuminated zones.

Abstract translation: 在具有帧传送结构的光传感器中，构成感光点矩阵的每个像素都设置有脉冲控制的MOS晶体管。 在帧传送结束时，TMOS通过电极VDA和VGA进行控制，以消除光敏区域中存在的残留电荷，这是由于与图像中的暗区相对应的空位的传送 照明区下的阶段。