摘要:
A method for manufacturing a semiconductor chip stack device is provided. The method includes forming a first connecting element array on a surface of a first semiconductor chip; forming a second connecting element array on a surface of a second semiconductor chip, the second array comprising more connecting elements than the first array and the pitch of the first array being a multiple of the pitch of the second array; applying the first chip against the second chip; and setting up test signals between the first and second chips to determine the matching between the connecting elements of the first array and the connecting elements of the second array.
摘要:
A device for synchronizing a reference event of an analog signal, which includes an analog-to-digital converter receiving an input signal, a register receiving the converter output, a phase-locked loop including an oscillator generating several phase-shifted clock signals of same period, a first clock signal clocking the register, a multiplexer receiving the other clock signals on respective inputs, the output of which clocks said converter, and an analysis circuit connected to control the multiplexer according to successive values of the register output.
摘要:
A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.
摘要:
The disclosure relates to thermal image detectors and, more particularly, to linear or matrix type pyroelectic detectors. These detectors work differentially, in successive phases of masking and illumination, by use of a shutter that is synchronized with the signal processing circuits. The detected signals are shed in the form of charge packets into a shift register (RD). To reduce the noises that are proportional to the duration of the illumination or masking phases, the shutter is made to work at higher speed and several successive illumination/masking cycles are carried out by making the shift register go backward between two cycles. The shift register is emptied to give an image signal only after two or more cycles.
摘要:
Infrared detectors whose detecting part consists of a layer of pyroelectric material deposited on a semiconductive substrate are disclosed. The object is to facilitate the polarization of the layer of pyroelectric material after it is deposited on the semiconductive substrate. The detector of the invention includes a semiconductive substrate (15) carrying a layer of pyroelectric material (11) in which are defined zones, each corresponding to a pixel (P1 to P9). Each pyroelectric zone is defined by an electrode known as lower electrode (EI 1 to EI 9), in contact with a face of pyroelectric layer (11) oriented toward substrate (15). According to a characteristic of the invention, a diode known as polarization diode (DP) is formed in substrate (15) for each pixel (P1 to P9). The polarization diode is connected to lower electrode (EI 1 to EI 9) to make possible the passage of a current between substrate (15) and the lower electrode.
摘要:
Disclosed is a photodetector comprising at least one photosensitive diode and at least one read circuit enabling the charges generated by photoelectric effect in said diode to be converted into a voltage information element sampled by a switch, wherein said photosensitive diode has a first terminal connected to the gate and to the drain of a first transistor and a second terminal connected to the source of said first transistor and to the ground of said photodetector, wherein a second transistor with dimensions proportional to those of said first transistor is mounted as a current mirror with respect to said first transistor and wherein an integration capacitor is connected to the drain of said second transistor so as to collect said voltage information element at its terminals.
摘要:
A thermal image detector and, more particularly, linear or matrix pyroelectric detectors. These detectors work differentially in successive phases of illumination and masking via a shutter that is synchronized with signal processing circuits. The detector generates differential measurement signals representing variations of pyroelectric signals recorded during a cycle comprising a masking phase and an illumination phase. To eliminate fixed pattern noise, it is proposed to make the measurements by difference between two successive cycles of masking and illumination, the order of the illumination/masking cycles being reversed between the two cycles but the measurements being made identically in both cycles. A memory records the signals during a cycle. A subtractor subtracts the signal of the current cycle from the signal recorded in the previous cycle.
摘要:
A millimeter wave transceiver including a plate forming an interposer having its upper surface supporting an interconnection network and having its lower surface intended to be assembled on a printed circuit board by bumps; an integrated circuit chip assembled on the upper surface of the interposer; antennas made of tracks formed on the upper surface of the interposer; and reflectors on the upper surface of the printed circuit board in front of each of the antennas, the effective distance between each antenna and the reflector plate being on the order of one quarter of the wavelength, taking into account the dielectric constants of the interposed materials.
摘要:
A method of detecting electromagnetic radiation imparted onto a matrix of photosensitive photomos networks in which pixels of each photomos network are simultaneously exposed to electromagnetic radiation source for a predetermined period of time. Thereafter, transfer signals are applied to each photomos pixel and accumulated charges corresponding to the strength of the radiation imparted onto the pixels are transferred in a columnwise fashion to the end of each column of the photomos networks. The charges are summed at the end of the columns and placed in a reading register. The charges in the reading register of each photomos network are summed and a signal is output corresponding to the strength of the electromagnetic radiation imparted onto the photomos network.
摘要:
A wide-band phase shifter contains a first (.phi..sub.1) and a second (.phi..sub.2) parallel branch receiving the same input signal (e) and presenting at their output a first (s.sub.1) and a second (s.sub.2) output signal which are shifted with respect to each other by a given angle. The first branch includes a first phase shift module (.phi..sub.1) and the second branch includes a second phase shift module (.phi..sub.2). A first (V.sub..epsilon.1) and a second (V.sub..epsilon.2) control signal are processed by a negative feedback loop having a phase-sensitive detector (10) which receives the output signals (s.sub.1, s.sub.2). A control circuit (CC) receives a control signal (.epsilon.) supplied by the detector (10) and produces the control signals (V.sub..epsilon.1, V.sub..epsilon.2). These signals are generated for producing the oppositely directed phase corrections in the two phase shift modules.