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公开(公告)号：US20210301391A1
公开(公告)日：2021-09-30
申请号：US17216260
申请日：2021-03-29
Applicant: ASM IP Holding B.V.
Inventor： Michael Eugene Givens , Eva Tois , Suvi Haukka , Daria Nevstrueva , Charles Dezelah
Abstract: In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.
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公开(公告)号：US20210033977A1
公开(公告)日：2021-02-04
申请号：US16931275
申请日：2020-07-16
Applicant: ASM IP Holding B.V.
Inventor： Ivo Raaijmakers , Daniele Piumi , Ivan Zyulkov , David Kurt de Roest , Michael Eugene Givens
IPC: G03F7/16
Abstract: A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.
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公开(公告)号：US10665452B2
公开(公告)日：2020-05-26
申请号：US16018692
申请日：2018-06-26
Applicant: ASM IP Holding B.V.
Inventor： Qi Xie , David de Roest , Jacob Woodruff , Michael Eugene Givens , Jan Willem Maes , Timothee Blanquart
IPC: H01L21/02 , H01L21/265 , H01L29/36 , H01L29/417 , H01L21/225 , H01L29/08
Abstract: A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.
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44.发明申请公开(公告)号：US20200161438A1
公开(公告)日：2020-05-21
申请号：US16194041
申请日：2018-11-16
Applicant: ASM IP Holding B.V.
Inventor： Fu Tang , Peng-Fu Hsu , Michael Eugene Givens , Qi Xie
Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.
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公开(公告)号：US20170317194A1
公开(公告)日：2017-11-02
申请号：US15144506
申请日：2016-05-02
Applicant: ASM IP Holding B.V.
Inventor： Fu Tang , Qi Xie , Jan Willem Maes , Xiaoqiang Jiang , Michael Eugene Givens
CPC classification number: H01L29/66833 , H01L21/02112 , H01L21/02205 , H01L21/0228 , H01L21/28282
Abstract: A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the method may include multiple cycles for forming an oxide and a nitride in order to form an oxynitride layer.
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Patent Agency Ranking
公开(公告)号：US09711396B2
公开(公告)日：2017-07-18
申请号：US14741249
申请日：2015-06-16
Applicant: ASM IP Holding B.V.
Inventor： Fu Tang , Michael Eugene Givens , Jacob Huffman Woodruff , Qi Xie , Jan Willem Maes
IPC: H01L21/768 , H01L21/02
CPC classification number: H01L21/76829 , C23C16/02 , C23C16/045 , C23C16/305 , C23C16/45553 , H01L21/02175 , H01L21/02186 , H01L21/0228 , H01L21/02304 , H01L21/285 , H01L21/76814 , H01L21/76831 , H01L21/76895 , H01L23/485 , H01L29/42364 , H01L29/517 , H01L29/78
Abstract: In some aspects, methods of forming a metal chalcogenide thin film are provided. According to some methods, a metal chalcogenide thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase chalcogen reactant. In some aspects, methods of forming three-dimensional structure on a substrate surface are provided. In some embodiments, the method includes forming a metal chalcogenide dielectric layer between a substrate and a conductive layer. In some embodiments the method includes forming an MIS-type contact structure including a metal chalcogenide dielectric layer.
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47.发明授权公开(公告)号：US09558931B2
公开(公告)日：2017-01-31
申请号：US13941216
申请日：2013-07-12
Applicant: ASM IP Holding B.V.
Inventor： Fu Tang , Michael Eugene Givens , Qi Xie , Petri Raisanen
CPC classification number: H01L23/3171 , C23C16/4405 , C23C16/45544 , H01L21/02178 , H01L21/02205 , H01L21/02274 , H01L21/0228 , H01L21/02301 , H01L21/02312 , H01L21/306 , H01L21/67011 , H01L23/02 , H01L23/29 , H01L23/293 , H01L2924/0002 , H01L2924/00
Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.
Abstract translation: 公开了用于钝化高迁移率半导体的表面的改进的方法和系统以及使用这些方法形成的结构和器件。 该方法包括向反应器的室提供高迁移率半导体表面，并将高迁移率半导体表面暴露于气相硫前体以钝化高迁移率半导体表面。
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公开(公告)号：US20250060671A1
公开(公告)日：2025-02-20
申请号：US18936501
申请日：2024-11-04
Applicant: ASM IP Holding B.V.
Inventor： Ivo Raaijmakers , Daniele Piumi , Ivan Zyulkov , David Kurt de Roest , Michael Eugene Givens
IPC: G03F7/16
Abstract: A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.
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49.发明公开公开(公告)号：US20240191347A1
公开(公告)日：2024-06-13
申请号：US18535440
申请日：2023-12-11
Applicant: ASM IP Holding B.V.
Inventor： Monica Thukkaram , Aditya Chauhan , Andrea Illiberi , Vivek Koladi Mootheri , Leo Lukose , Alessandra Leonhardt , Michael Eugene Givens
IPC: C23C16/40 , C23C16/455
CPC classification number: C23C16/407 , C23C16/403 , C23C16/45527 , C23C16/45553
Abstract: Methods and related solids and systems are described. In some embodiments, methods as described herein can comprise executing a plurality of super cycles. Ones from the plurality of super cycles can comprise a magnesium sub cycle, an aluminum sub cycle, and a zinc sub cycle. At least one super cycle can comprise more than one magnesium sub cycle, aluminum sub cycle, or zinc sub cycle. Thus, layers having a tunable magnesium, aluminum, or zinc composition can be formed.
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公开(公告)号：US20230245888A1
公开(公告)日：2023-08-03
申请号：US18161681
申请日：2023-01-30
Applicant: ASM IP Holding, B.V.
Inventor： Wonjong Kim , Rami Khazaka , Michael Eugene Givens
IPC: H01L21/02
CPC classification number: H01L21/0262 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02587 , H01L21/02661
Abstract: Methods for forming structures that include forming a heteroepitaxial layer on a substrate are disclosed. The presently disclosed methods comprise epitaxially forming a buffer layer on the substrate. The substrate has a substrate composition. The buffer layer has a buffer layer composition. The buffer layer composition is substantially identical to the substrate composition. The presently disclosed methods further comprise epitaxially forming a heteroepitaxial layer on the buffer layer. The heteroepitaxial layer has a heteroepitaxial layer composition which is different from the substrate composition.
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