公开(公告)号：US20050112886A1

公开(公告)日：2005-05-26

申请号：US10976987

申请日：2004-11-01

申请人： Koji Asakawa ,  Akira Fujimoto ,  Hitoshi Sugiyama ,  Kenichi Ohashi ,  Kenji Suzuki ,  Junichi Tonotani

发明人： Koji Asakawa ,  Akira Fujimoto ,  Hitoshi Sugiyama ,  Kenichi Ohashi ,  Kenji Suzuki ,  Junichi Tonotani

IPC分类号： H01L33/22 ,  B32B1/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L33/22 ,  H01L21/0271

摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.

摘要翻译： 在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。 本发明的发光元件表面上的粗糙结构形成为以下形状，使得折射率平滑地变化：（1）粗糙面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从其在光波长内的平均值分布，以便给出折射率的平滑梯度。 这种发光元件的表面通过使用含有嵌段共聚物或接枝共聚物的树脂组合物在发光元件的表面上形成薄膜而以自组织形式形成微晶相分离结构而获得; 选择性地除去形成在表面上的薄膜的微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

公开(公告)号：US06825056B2

公开(公告)日：2004-11-30

申请号：US10330086

申请日：2002-12-30

申请人： Koji Asakawa ,  Akira Fujimoto ,  Hitoshi Sugiyama ,  Kenichi Ohashi ,  Kenji Suzuki ,  Junichi Tonotani

发明人： Koji Asakawa ,  Akira Fujimoto ,  Hitoshi Sugiyama ,  Kenichi Ohashi ,  Kenji Suzuki ,  Junichi Tonotani

IPC分类号： H01L2100

CPC分类号： H01L33/22 ,  H01L21/0271

摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure is formed into the following shape to change refractive index smoothly: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a block or graft copolymer comprising resin composition and forms a self-assembled microphase-separated structure; selectively removing at least one phase of the microphase-separated structure; and etching the surface of the light-emitting element using the remaining phase as an etching mask.

摘要翻译： 在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。 粗糙结构形成为以下形状以平滑地改变折射率：（1）粗糙表面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从它们在光波长内的平均值分布。 这种发光元件的表面通过使用包含树脂组合物的嵌段或接枝共聚物在发光元件的表面上形成薄膜而获得，并形成自组装的微相分离结构; 选择性地除去微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

公开(公告)号：US09318661B2

公开(公告)日：2016-04-19

申请号：US13038154

申请日：2011-03-01

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部分穿透金属部分并且具有开口部分形状的当量圆直径。 发光层位于第一半导体层和第一电极层之间。 第二导电类型的第二半导体层位于发光层和第一电极层之间。 第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US09136405B2

公开(公告)日：2015-09-15

申请号：US12700063

申请日：2010-02-04

申请人： Eishi Tsutsumi ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

发明人： Eishi Tsutsumi ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/022433 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 μm2, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.

摘要翻译： 本发明提供一种发光效率和光透射性优异的透光型太阳能电池，并且还提供一种太阳能电池的制造方法。 本发明的太阳能电池包括光电转换层，光入射侧电极层和对电极层。 入射侧电极层设置有穿过层的多个开口，并且具有10nm至200nm的厚度。 每个开口占据80nm 2至0.8μm2的面积，并且开口率在10％至66％的范围内。 在700nm波长下，全细胞的透射率为5％以上。 入射侧电极层可以通过用压模进行蚀刻制造来形成。 在蚀刻制造中，可以使用通过自组装嵌段共聚物形成的细颗粒的单粒子层或点图案作为掩模。

公开(公告)号：US08692283B2

公开(公告)日：2014-04-08

申请号：US13407291

申请日：2012-02-28

申请人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L33/40

CPC分类号： B82Y20/00 ,  B82Y40/00 ,  H01L33/42 ,  H01L51/5209

摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.

摘要翻译： 根据一个实施例，透光金属电极包括金属层。 金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。 薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。 沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。 从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。

公开(公告)号：US08680561B2

公开(公告)日：2014-03-25

申请号：US13037914

申请日：2011-03-01

申请人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Eishi Tsutsumi ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

发明人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Eishi Tsutsumi ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.

摘要翻译： 一种半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第一电极层和第二电极层。 发光层位于第一半导体层和第二半导体层之间。 第一电极层位于与第一半导体层相对的第二半导体层的一侧。 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部。 金属部分接触第二半导体层。 沿着该方向观察的开口部分的构造的等效圆直径不小于10纳米且不大于5微米。

公开(公告)号：US20130092219A1

公开(公告)日：2013-04-18

申请号：US13619360

申请日：2012-09-14

申请人： Eishi TSUTSUMI ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

发明人： Eishi TSUTSUMI ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01L31/0224

CPC分类号： H01L31/022425 ,  H01L31/02168 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention provides a solar cell comprising a laminate of a photoelectric conversion layer, a metal porous membrane and a refractive index adjusting layer. The metal porous membrane is positioned on the light-incident side, is directly in contact with the photoelectric conversion layer, and has plural openings bored though the membrane. The refractive index adjusting layer covers at least a part of the surface of the metal porous membrane and of the inner surfaces of the openings, and has a refractive index of 1.35 to 4.2 inclusive. If adopting a nano-fabricated metal membrane as an electrode, the present invention enables to provide a solar cell capable of realizing efficient photoelectric conversion by use of electric field-enhancement effect.

摘要翻译： 本发明提供一种太阳能电池，其包括光电转换层，金属多孔膜和折射率调节层的层压体。 金属多孔膜位于光入射侧，与光电转换层直接接触，并且具有通过膜而钻出的多个开口。 折射率调节层覆盖金属多孔膜的表面和开口的内表面的至少一部分，折射率为1.35〜4.2。 如果采用纳米制造的金属膜作为电极，则本发明能够提供能够通过使用电场增强效果实现有效的光电转换的太阳能电池。

公开(公告)号：US20120247552A1

公开(公告)日：2012-10-04

申请号：US13422728

申请日：2012-03-16

申请人： Akira FUJIMOTO ,  Tsutomu Nakanishi ,  Kenji Nakamura ,  Kumi Masunaga ,  Koji Asakawa

发明人： Akira FUJIMOTO ,  Tsutomu Nakanishi ,  Kenji Nakamura ,  Kumi Masunaga ,  Koji Asakawa

IPC分类号： H01L31/0224 ,  H01L31/036 ,  H01L31/0312 ,  H01L31/0376 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0264 ,  H01L31/0368

CPC分类号： H01L31/022425 ,  H01L31/02168 ,  H01L31/0288 ,  Y02E10/50

摘要： A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.

摘要翻译： 光电转换元件包括光电转换层，其包括第一金属层，半导体层和第二金属层，所有这些都被层压。 此外，第一金属层和第二金属层中的至少一个是具有多个通孔的纳米网状金属或具有在半导体层上彼此分开设置的多个金属点的点状金属。 光电转换层包括含有杂质的长波长吸收层，该杂质与p型掺杂和半导体层的n型掺杂不同。 长波长吸收层距离纳米网状金属或点状金属为5nm以下。

公开(公告)号：US20120042946A1

公开(公告)日：2012-02-23

申请号：US13216977

申请日：2011-08-24

申请人： Kumi Masunaga ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

发明人： Kumi Masunaga ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/0236 ,  H01L31/022433 ,  Y02E10/50

摘要： The embodiment provides a solar cell and a manufacturing process thereof. The solar cell is equipped with an electrode on the light incident surface side; and the electrode has both low resistivity and high transparency, can efficiently utilize solar light for excitation of carriers, and can be made of inexpensive materials. The solar cell comprises a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and has plural penetrating openings. Each of the individual openings occupies an area in the range of 80 nm2 to 0.8 μm2, and the aperture ratio thereof is in the range 10 to 66%. The first electrode layer in the cell can be produced by etching procedure using an etching mask obtained by use of a single particle layer of fine particles, by use of a dot pattern formed by self-assembly of a block copolymer, or by use of a stamper.

摘要翻译： 本实施例提供一种太阳能电池及其制造方法。 太阳能电池在光入射面侧配备有电极; 并且电极具有低电阻率和高透明度，可以有效地利用太阳光用于载流子的激发，并且可以由廉价的材料制成。 太阳能电池包括光电转换层，布置在光入射表面侧的第一电极层和与第一电极层相对布置的第二电极层。 第一电极层的厚度为10〜200nm，具有多个贯通孔。 每个单独的开口占据在80nm 2至0.8μm2范围内的面积，并且其开口率在10至66％的范围内。 电池中的第一电极层可以通过使用通过使用单颗粒细小颗粒层获得的蚀刻掩模，通过使用通过嵌段共聚物的自组装形成的点图案或通过使用 压模。

公开(公告)号：US08101964B2

公开(公告)日：2012-01-24

申请号：US12363198

申请日：2009-01-30

申请人： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

发明人： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

IPC分类号： H01L30/00

CPC分类号： H01L33/38 ,  H01L2933/0091

摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续连接而不断裂，并且整个区域的95％或更多的金属部分线性地继续而不断开，直线距离不大于 从有源层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。