摘要:
A tunable optical filter includes a tunable Fabry-Perot (FP) filter, two tunable waveguide Bragg gratings (WBGs) and a 2×2 3-dB coupler. In one embodiment, the WBGs are implemented in a silicon substrate using polysilicon filled trenches. The FP filter is implemented with two silicon nitride trench WBGs with a gap region between them. The FP filter and the WBGs are respectively tuned to transmit and reflect a selected wavelength. A broadband optical signal is propagated into a first port of the coupler. The coupler propagates half of the beam to one WBG and the other half to the other WBG. The WBGs reflect these portions back to the coupler, which then propagates the reflected portions to the FP filter.
摘要:
A tunable Bragg grating method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes directing an optical beam into a first end of an optical path having the first end and a second end disposed in a semiconductor substrate, reflecting a first portion of the optical beam having a first center wavelength back out from the first end of the optical path and tuning the optical path to reflect a second portion of the optical beam having a second center wavelength back out from the first end of the optical path. In one embodiment, the Bragg grating is tuned with a heater used to adjust a temperature of the semiconductor substrate. In another embodiment, charge in charge modulated regions along the optical path is modulated to tune the Bragg grating.
摘要:
An optical bistable silicon Raman laser is disclosed, which provides digital signal regeneration, reshaping and wavelength conversion. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. First and second reflectors are disposed in the optical waveguide. The first and second reflectors define a cavity in the optical waveguide. The cavity is to receive a first optical beam having a first wavelength. A power level of the first optical beam received by the cavity rising above a second power level results in emission of a second optical beam of a second wavelength from the cavity until the power level of the first optical beam received by the cavity falls below a first power level. The first power level is less than the second power level.
摘要:
A fast optical modulator or switch with reduced optical loss is disclosed. An apparatus according to aspects of the present invention includes an optical splitter disposed in a semiconductor material. An optical beam having a first wavelength is split by the optical splitter into first and second portions. First and second optical waveguides disposed in the semiconductor material are optically coupled to the optical splitter. The first and second portions of the optical beam are to be directed through the first and second optical waveguides, respectively. The first optical waveguide is also optically coupled to receive a pump optical beam. The pump optical beam has a pump wavelength and a pump power level to amplify and phase shift the first portion of the optical beam of the first wavelength in the first optical waveguide. A diode structure is disposed in the first optical waveguide and is selectively biased to sweep out free carriers from the first optical waveguide generated in response to two photon absorption in the optical waveguide. An optical coupler is disposed in the semiconductor material and is optically coupled to the first and second optical waveguides to combine the first and second portions of the optical beam.
摘要:
An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the first region having a first conductivity type, and a second region of the optical waveguide disposed in the semiconductor material, the second region having a second conductivity type opposite to the first conductivity type. The apparatus also includes a substantially V shaped insulating region disposed between the first and second regions of the optical waveguide, wherein a vertex of the substantially V shaped insulating region forms an intersecting line that is substantially parallel to an optical path of an optical beam to be directed through the optical waveguide.
摘要:
An optical switching method and apparatus. In one aspect of the present invention, the disclosed apparatus includes first and second multi-mode interference (MMI) splitting devices in a semiconductor substrate. First and second outputs of the first MMI splitting device are optically coupled to first and second inputs, respectively, of the second MMI splitting device. First and second phase control devices are included in the semiconductor substrate. The first input of the second MMI splitting device is optically coupled to the first output of the first MMI splitting device through the first phase control device. The second input of the second MMI splitting device is optically coupled to the second output of the first MMI splitting device through the second phase control device. The first input of the first MMI splitting device is selectively optically coupled to the first and second outputs of the second MMI splitting device in response to the first and second phase control devices. The second input of the first MMI splitting device is selectively optically coupled to the first and second outputs of the second MMI splitting device in response to the first and second phase control devices.
摘要:
A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.
摘要:
Optical modulator utilizing wafer bonding technology. An embodiment of a method includes etching a silicon on insulator (SOI) wafer to produce a first part of a silicon waveguide structure on a first surface of the SOI wafer, and preparing a second wafer, the second wafer including a layer of crystalline silicon, the second wafer including a first surface of crystalline silicon. The method further includes bonding the first surface of the second wafer with a thin oxide to the first surface of the SOI wafer using a wafer bonding technique, wherein a second part of the silicon waveguide structure is etched in the layer of crystalline silicon.
摘要:
An integrated optical receiver architecture may be used to couple light between a multi-mode fiber (MMF) and silicon chip which includes integration of a silicon de-multiplexer and a high-speed Ge photo-detector. The proposed architecture may be used for both parallel and wavelength division multiplexing (WDM) based optical links with a data rate of 25 Gb/s and beyond.
摘要:
An electrical-optical coupling and detecting device. An apparatus according to an embodiment of the present invention includes a reflective surface defined on semiconductor material. The reflective surface is to reflect an incident optical beam towards an optical destination. An optical detector is monolithically integrated in the reflective surface of the semiconductor material. The optical detector arranged in the reflective surface of the semiconductor material is to detect the incident optical beam.