Silicon-based tunable single passband optical filter
    41.
    发明授权
    Silicon-based tunable single passband optical filter 失效
    硅基可调谐单通道滤光片

    公开(公告)号:US07106922B2

    公开(公告)日:2006-09-12

    申请号:US10848663

    申请日:2004-05-18

    申请人: Ansheng Liu

    发明人: Ansheng Liu

    IPC分类号: G02B6/26

    摘要: A tunable optical filter includes a tunable Fabry-Perot (FP) filter, two tunable waveguide Bragg gratings (WBGs) and a 2×2 3-dB coupler. In one embodiment, the WBGs are implemented in a silicon substrate using polysilicon filled trenches. The FP filter is implemented with two silicon nitride trench WBGs with a gap region between them. The FP filter and the WBGs are respectively tuned to transmit and reflect a selected wavelength. A broadband optical signal is propagated into a first port of the coupler. The coupler propagates half of the beam to one WBG and the other half to the other WBG. The WBGs reflect these portions back to the coupler, which then propagates the reflected portions to the FP filter.

    摘要翻译: 可调谐光学滤波器包括可调谐法布里 - 珀罗(FP)滤波器,两个可调谐波导布拉格光栅(WBG)和一个2x2 3 dB耦合器。 在一个实施例中,WBG在使用多晶硅填充沟槽的硅衬底中实现。 FP滤波器由两个其间具有间隙区域的两个氮化硅沟槽WBG实现。 FP滤波器和WBG分别被调谐以传输和反射所选择的波长。 宽带光信号被传播到耦合器的第一端口。 耦合器将光束的一半传播到一个WBG,另一半传播到另一个WBG。 WBG将这些部分反射回耦合器,然后耦合器将反射部分传播到FP滤光器。

    Digital signal regeneration, reshaping and wavelength conversion using an optical bistable silicon Raman laser
    43.
    发明申请
    Digital signal regeneration, reshaping and wavelength conversion using an optical bistable silicon Raman laser 失效
    使用光学双稳态硅拉曼激光器进行数字信号再生,整形和波长转换

    公开(公告)号:US20060159131A1

    公开(公告)日:2006-07-20

    申请号:US11040238

    申请日:2005-01-20

    IPC分类号: H01S3/30

    摘要: An optical bistable silicon Raman laser is disclosed, which provides digital signal regeneration, reshaping and wavelength conversion. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. First and second reflectors are disposed in the optical waveguide. The first and second reflectors define a cavity in the optical waveguide. The cavity is to receive a first optical beam having a first wavelength. A power level of the first optical beam received by the cavity rising above a second power level results in emission of a second optical beam of a second wavelength from the cavity until the power level of the first optical beam received by the cavity falls below a first power level. The first power level is less than the second power level.

    摘要翻译: 公开了一种光学双稳态硅拉曼激光器,其提供数字信号再生,整形和波长转换。 根据本发明的方面的装置包括设置在半导体材料中的光波导。 第一和第二反射器设置在光波导中。 第一和第二反射器限定光波导中的空腔。 腔体将接收具有第一波长的第一光束。 由空腔接收的第一光束的功率电平升高到高于第二功率电平,导致从空腔发射第二波长的第二光束,直到由空腔接收的第一光束的功率电平落在第一 能量等级。 第一功率电平小于第二功率电平。

    Reduced loss ultra-fast semiconductor modulator and switch
    44.
    发明申请
    Reduced loss ultra-fast semiconductor modulator and switch 有权
    减速超快速半导体调制器和开关

    公开(公告)号:US20060126986A1

    公开(公告)日:2006-06-15

    申请号:US11007858

    申请日:2004-12-09

    IPC分类号: G02F1/01

    摘要: A fast optical modulator or switch with reduced optical loss is disclosed. An apparatus according to aspects of the present invention includes an optical splitter disposed in a semiconductor material. An optical beam having a first wavelength is split by the optical splitter into first and second portions. First and second optical waveguides disposed in the semiconductor material are optically coupled to the optical splitter. The first and second portions of the optical beam are to be directed through the first and second optical waveguides, respectively. The first optical waveguide is also optically coupled to receive a pump optical beam. The pump optical beam has a pump wavelength and a pump power level to amplify and phase shift the first portion of the optical beam of the first wavelength in the first optical waveguide. A diode structure is disposed in the first optical waveguide and is selectively biased to sweep out free carriers from the first optical waveguide generated in response to two photon absorption in the optical waveguide. An optical coupler is disposed in the semiconductor material and is optically coupled to the first and second optical waveguides to combine the first and second portions of the optical beam.

    摘要翻译: 公开了一种光损耗降低的快速光调制器或开关。 根据本发明的方面的装置包括设置在半导体材料中的光分路器。 具有第一波长的光束被分光器分成第一和第二部分。 设置在半导体材料中的第一和第二光波导光耦合到光分路器。 光束的第一和第二部分分别被引导通过第一和第二光波导。 第一光波导也被光学耦合以接收泵浦光束。 泵浦光束具有泵浦波长和泵浦功率电平,以放大并相移第一波导中的第一波长的光束的第一部分。 二极管结构设置在第一光波导中,并且被选择性地偏置以从响应于光波导中的两个光子吸收而产生的第一光波导扫出自由载流子。 光耦合器设置在半导体材料中并且光学耦合到第一和第二光波导以组合光束的第一和第二部分。

    Method and apparatus for polarization insensitive phase shifting of an optical beam in an optical device

    公开(公告)号:US20050286851A1

    公开(公告)日:2005-12-29

    申请号:US11205409

    申请日:2005-08-16

    IPC分类号: G02F1/025 G02B6/10

    CPC分类号: G02F1/025 G02F2203/06

    摘要: An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the first region having a first conductivity type, and a second region of the optical waveguide disposed in the semiconductor material, the second region having a second conductivity type opposite to the first conductivity type. The apparatus also includes a substantially V shaped insulating region disposed between the first and second regions of the optical waveguide, wherein a vertex of the substantially V shaped insulating region forms an intersecting line that is substantially parallel to an optical path of an optical beam to be directed through the optical waveguide.

    Method and apparatus for switching an optical beam in a semiconductor substrate
    46.
    发明授权
    Method and apparatus for switching an optical beam in a semiconductor substrate 有权
    用于切换半导体衬底中的光束的方法和装置

    公开(公告)号:US06603893B1

    公开(公告)日:2003-08-05

    申请号:US09819160

    申请日:2001-03-27

    IPC分类号: G02B626

    摘要: An optical switching method and apparatus. In one aspect of the present invention, the disclosed apparatus includes first and second multi-mode interference (MMI) splitting devices in a semiconductor substrate. First and second outputs of the first MMI splitting device are optically coupled to first and second inputs, respectively, of the second MMI splitting device. First and second phase control devices are included in the semiconductor substrate. The first input of the second MMI splitting device is optically coupled to the first output of the first MMI splitting device through the first phase control device. The second input of the second MMI splitting device is optically coupled to the second output of the first MMI splitting device through the second phase control device. The first input of the first MMI splitting device is selectively optically coupled to the first and second outputs of the second MMI splitting device in response to the first and second phase control devices. The second input of the first MMI splitting device is selectively optically coupled to the first and second outputs of the second MMI splitting device in response to the first and second phase control devices.

    摘要翻译: 一种光学切换方法和装置。 在本发明的一个方面,所公开的设备包括半导体衬底中的第一和第二多模干涉(MMI)分离器件。 第一MMI分割装置的第一和第二输出分别光耦合到第二MMI分割装置的第一和第二输入。 第一和第二相位控制装置包括在半导体衬底中。 第二MMI分割装置的第一输入通过第一相位控制装置光耦合到第一MMI分配装置的第一输出端。 第二MMI分配装置的第二输入通过第二相位控制装置光耦合到第一MMI分配装置的第二输出端。 响应于第一和第二相位控制装置,第一MMI分配装置的第一输入选择性地光耦合到第二MMI分配装置的第一和第二输出端。 响应于第一和第二相位控制装置,第一MMI分配装置的第二输入被选择性地光耦合到第二MMI分配装置的第一和第二输出端。

    LOW VOLTAGE AVALANCHE PHOTODIODE WITH RE-ENTRANT MIRROR FOR SILICON BASED PHOTONIC INTEGRATED CIRCUITS
    47.
    发明申请
    LOW VOLTAGE AVALANCHE PHOTODIODE WITH RE-ENTRANT MIRROR FOR SILICON BASED PHOTONIC INTEGRATED CIRCUITS 有权
    具有基于硅的光电集成电路的带有反射镜的低电压AVALANCHE光电

    公开(公告)号:US20140252411A1

    公开(公告)日:2014-09-11

    申请号:US13976369

    申请日:2013-03-11

    摘要: A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.

    摘要翻译: 低电压APD设置在在PIC芯片的硅器件层内横向延伸的波导的端部。 APD布置在共同位于波导端部的倒置反射镜上,以将光从波导的内部反射耦合到APD的下侧。 在示例性实施例中,通过晶体蚀刻在硅器件层中形成45°-55°刻面。 在实施例中,APD包括硅倍增层,乘法层上的锗吸收层以及设置在吸收层上的多个欧姆接触。 覆盖的光反射金属膜互连多个欧姆接触并将在欧姆接触周围传输的光返回到吸收层,以提高检测器响应度。

    Optical modulator utilizing wafer bonding technology
    48.
    发明授权
    Optical modulator utilizing wafer bonding technology 有权
    采用晶圆键合技术的光调制器

    公开(公告)号:US08450186B2

    公开(公告)日:2013-05-28

    申请号:US12567645

    申请日:2009-09-25

    IPC分类号: H01L21/46

    摘要: Optical modulator utilizing wafer bonding technology. An embodiment of a method includes etching a silicon on insulator (SOI) wafer to produce a first part of a silicon waveguide structure on a first surface of the SOI wafer, and preparing a second wafer, the second wafer including a layer of crystalline silicon, the second wafer including a first surface of crystalline silicon. The method further includes bonding the first surface of the second wafer with a thin oxide to the first surface of the SOI wafer using a wafer bonding technique, wherein a second part of the silicon waveguide structure is etched in the layer of crystalline silicon.

    摘要翻译: 采用晶圆键合技术的光调制器。 一种方法的实施例包括蚀刻绝缘体上硅(SOI)晶片以在SOI晶片的第一表面上产生硅波导结构的第一部分,以及制备第二晶片,所述第二晶片包括晶体硅层, 所述第二晶片包括晶体硅的第一表面。 该方法还包括使用晶片接合技术将第二晶片的第一表面与薄氧化物结合到SOI晶片的第一表面,其中硅波导结构的第二部分被蚀刻在晶体硅层中。

    Integrated optical receiver architecture for high speed optical I/O applications
    49.
    发明授权
    Integrated optical receiver architecture for high speed optical I/O applications 有权
    用于高速光学I / O应用的集成光接收器架构

    公开(公告)号:US08319237B2

    公开(公告)日:2012-11-27

    申请号:US12651314

    申请日:2009-12-31

    申请人: Ansheng Liu

    发明人: Ansheng Liu

    IPC分类号: H01L33/00

    摘要: An integrated optical receiver architecture may be used to couple light between a multi-mode fiber (MMF) and silicon chip which includes integration of a silicon de-multiplexer and a high-speed Ge photo-detector. The proposed architecture may be used for both parallel and wavelength division multiplexing (WDM) based optical links with a data rate of 25 Gb/s and beyond.

    摘要翻译: 可以使用集成光接收器架构来耦合包括硅解复用器和高速Ge光检测器的集成的多模光纤(MMF)和硅芯片之间的光。 所提出的架构可以用于具有25Gb / s以上的数据速率的基于并行和波分复用(WDM)的光链路。

    Integrated optical detector in semiconductor reflector
    50.
    发明授权
    Integrated optical detector in semiconductor reflector 有权
    集成光检测器在半导体反射器

    公开(公告)号:US07782921B2

    公开(公告)日:2010-08-24

    申请号:US11092059

    申请日:2005-03-28

    IPC分类号: H01S5/00

    摘要: An electrical-optical coupling and detecting device. An apparatus according to an embodiment of the present invention includes a reflective surface defined on semiconductor material. The reflective surface is to reflect an incident optical beam towards an optical destination. An optical detector is monolithically integrated in the reflective surface of the semiconductor material. The optical detector arranged in the reflective surface of the semiconductor material is to detect the incident optical beam.

    摘要翻译: 一种电光耦合和检测装置。 根据本发明实施例的装置包括限定在半导体材料上的反射表面。 反射表面是将入射光束反射到光学目的地。 光学检测器单片集成在半导体材料的反射表面中。 布置在半导体材料的反射表面中的光学检测器是检测入射光束。