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101 条记录 (耗时 0.048 秒)

    High voltage insulator for preventing instability in an ion implanter due to triple-junction breakdown
    42.
    发明授权
    High voltage insulator for preventing instability in an ion implanter due to triple-junction breakdown 有权
    高压绝缘子，用于防止由于三结击穿引起的离子注入机的不稳定性

    公开(公告)号：US07622724B2

    公开(公告)日：2009-11-24

    申请号：US11767657

    申请日：2007-06-25

    申请人： Shengwu Chang ,  Frank Sinclair

    发明人： Shengwu Chang ,  Frank Sinclair

    IPC分类号： G21K5/00

    CPC分类号： H01B17/64

    摘要： A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum.

    摘要翻译： 描述了一种用于防止由于三结击穿引起的离子注入机不稳定性的高压绝缘体。 在一个实施例中，存在用于防止离子注入机中的三重连接不稳定性的装置。 在本实施例中，存在第一金属电极和第二金属电极。 绝缘体设置在第一金属电极和第二金属电极之间。 绝缘体具有在第一金属电极和第二金属电极之间的至少一个表面，其暴露于输送由离子注入机产生的离子束的真空。 第一导电层位于第一金属电极和绝缘体之间。 第一导电层防止在第一电极，绝缘体和真空的界面处发生三结击穿。 第二导电层位于第二金属电极和与第一导电层相对的绝缘体之间。 第二导电层防止在第二电极，绝缘体和真空的界面处发生三结击穿。

    Wafer processing chamber having separable upper and lower halves
    43.
    发明授权
    Wafer processing chamber having separable upper and lower halves 失效
    晶圆处理室具有可分离的上半部和下半部

    公开(公告)号：US06347919B1

    公开(公告)日：2002-02-19

    申请号：US09466416

    申请日：1999-12-17

    申请人： Kevin Thomas Ryan ,  Peter Lawrence Kellerman ,  Frank Sinclair ,  Ernest Everett Allen ,  Roger Bradford Fish

    发明人： Kevin Thomas Ryan ,  Peter Lawrence Kellerman ,  Frank Sinclair ,  Ernest Everett Allen ,  Roger Bradford Fish

    IPC分类号： B65G4907

    CPC分类号： H01L21/67126 ,  H01L21/67742 ,  H01L21/67745 ,  Y10S414/139

    摘要： A wafer processing apparatus includes a processing chamber having a top chamber portion and a bottom chamber portion, respectively. The apparatus further includes an annular ring valve associated with one of the top chamber portion and the bottom chamber portion which is operable to close the processing chamber for processing in a first position and open the processing chamber for access thereto in a second position. The ring valve, in the first position, provides a substantially uniform surface about an inner periphery of the closed processing chamber, and thereby facilitates uniform processing conditions. A method of accessing a wafer processing apparatus is also disclosed and includes moving an annular ring valve within a processing chamber between two positions. In the first position the annular ring valve sealingly blocks an access port of the processing chamber and thereby prohibits access thereto, and in the second position the annular ring valve does not block the access port, and permits access to the processing chamber. The annular ring valve has a substantially uniform inner peripheral surface, and thereby facilitates uniform processing conditions within the processing chamber when in the first position.

    摘要翻译： 晶片处理装置包括分别具有顶部室部分和底部室部分的处理室。 该装置还包括与顶部室部分和底部室部分中的一个相关联的环形环阀，其可操作以在第一位置关闭处理室以进行处理，并打开处理室以在第二位置进入其中。 环形阀在第一位置处提供围绕封闭处理室的内周的基本均匀的表面，从而有利于均匀的加工条件。 还公开了访问晶片处理装置的方法，并且包括将处理室内的环形环阀移动到两个位置之间。 在第一位置，环形环阀密封地阻挡处理室的进入口，从而禁止进入其中，并且在第二位置，环形环阀不阻挡进入口，并允许进入处理室。 环形环具有基本上均匀的内周面，从而在处于第一位置时有利于处理室内的均匀加工条件。

    Technique for manufacturing bit patterned media
    44.
    发明授权
    Technique for manufacturing bit patterned media 有权
    技术制造位图案媒体

    公开(公告)号：US09093104B2

    公开(公告)日：2015-07-28

    申请号：US13342762

    申请日：2012-01-03

    申请人： Frank Sinclair ,  Julian G. Blake ,  Helen L. Maynard ,  Alexander C. Kontos

    发明人： Frank Sinclair ,  Julian G. Blake ,  Helen L. Maynard ,  Alexander C. Kontos

    IPC分类号： B44C1/22 ,  G11B5/855

    CPC分类号： G11B5/855

    摘要： A novel technique for manufacturing bit patterned media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing bit pattern media. The technique, which may be realized as a method comprising: forming a non-catalysis region on a first portion of a catalysis layer; forming a non-magnetic separator on the non-catalysis region; and forming a magnetic active region on a second portion of the catalysis layer adjacent to the first portion of the catalysis layer.

    摘要翻译： 公开了一种用于制造位图案化介质的新型技术。 在一个特定的示例性实施例中，该技术可以被实现为用于制造钻头图案介质的方法。 该技术可以被实现为一种方法，包括：在催化层的第一部分上形成非催化区; 在非催化区上形成非磁性分离器; 以及在催化层的与催化层的第一部分相邻的第二部分上形成磁性活性区域。

    Techniques for Sub-Cooling in a Superconducting System
    47.
    发明申请
    Techniques for Sub-Cooling in a Superconducting System 审中-公开
    超导系统中副冷却技术

    公开(公告)号：US20130090242A1

    公开(公告)日：2013-04-11

    申请号：US13253652

    申请日：2011-10-05

    申请人： James D. Strassner ,  Gregory Citver ,  Frank Sinclair

    发明人： James D. Strassner ,  Gregory Citver ,  Frank Sinclair

    IPC分类号： H01L39/02 ,  H01F6/00 ,  F25D31/00 ,  H01F6/04 ,  H02H7/00

    CPC分类号： F25D3/10 ,  F25D19/00

    摘要： Techniques for sub-cooling in a superconducting (SC) system is disclosed. The techniques may be realized as a method and superconducting (SC) system comprising at least one insulated enclosure configured to enclose at least a first fluid or gas and a second fluid or gas, and at least one superconducting circuit within the at least one insulated enclosure. The superconducting (SC) system may be sub-cooled using at least the first fluid or gas.

    摘要翻译： 公开了在超导（SC）系统中的次冷的技术。 这些技术可以被实现为包括被配置为封闭至少第一流体或气体和第二流体或气体的至少一个绝缘壳体的方法和超导（SC）系统，以及至少一个绝缘外壳内的至少一个超导电路 。 可以使用至少第一流体或气体来对超导（SC）系统进行过冷却。

    TECHNIQUE FOR LIMITING FAULT CURRENT TRANSMISSION
    49.
    发明申请
    TECHNIQUE FOR LIMITING FAULT CURRENT TRANSMISSION 审中-公开
    限制故障电流传输的技术

    公开(公告)号：US20120256614A1

    公开(公告)日：2012-10-11

    申请号：US13399658

    申请日：2012-02-17

    申请人： Frank Sinclair ,  Rajesh Dorai

    发明人： Frank Sinclair ,  Rajesh Dorai

    IPC分类号： H02H9/02 ,  H01F38/00 ,  H01F27/28 ,  H01F17/04 ,  H01F27/24 ,  B82Y15/00

    CPC分类号： H02H9/021 ,  H01F38/023

    摘要： A technique for limiting fault current transmission is disclosed. In one particular exemplary embodiment, the technique may be realized with a fault current limiter comprising a core having at least first easy axis and a hard axis; and a first coil wound around the core, the first coil configured to carry current. In some embodiment, the easy axis of the core may be aligned with H fields generated by the current transmitted through the first coil.

    摘要翻译： 公开了限制故障电流传输的技术。 在一个特定的示例性实施例中，该技术可以利用包括具有至少第一容易轴和硬轴的芯的故障限流器来实现; 以及围绕所述芯缠绕的第一线圈，所述第一线圈构造成承载电流。 在一些实施例中，芯的容易轴可以与通过第一线圈传输的电流产生的H场对准。