公开(公告)号：US20160181086A1

公开(公告)日：2016-06-23

申请号：US14602201

申请日：2015-01-21

Applicant: Applied Materials, Inc.

Inventor： Ekaterina Mikhaylichenko ,  Brian J. Brown ,  Kyle M. Hanson ,  Vincent S. Francischetti

IPC: H01L21/02 ,  B08B3/08 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/02054 ,  B08B3/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67057 ,  H01L21/67733 ,  H01L21/67736 ,  H01L21/67751

Abstract: In some embodiments, a system is provided that includes (1) a loading position; (2) a drying position; (3) a movable tank configured to (a) hold at least one substrate; (b) hold a cleaning chemistry so as to expose a substrate within the movable tank to the cleaning chemistry; and (c) translate between the loading position and the drying position; and (4) a drying station located at the drying position and configured to rinse and dry a substrate as the substrate is unloaded from the movable tank when the movable tank is at the drying position. Numerous other aspects are provided.

Abstract translation: 在一些实施例中，提供一种系统，其包括（1）装载位置; （2）干燥位置; （3）可移动罐，其构造成（a）保持至少一个基板; （b）保持清洁化学品，以将可移动罐内的基底暴露于清洁化学品; 和（c）在装载位置和干燥位置之间平移; 和（4）位于干燥位置处的干燥站，其构造为当可移动罐处于干燥位置时基底从可移动罐卸载时冲洗和干燥基底。 提供了许多其他方面。

公开(公告)号：US20150306637A1

公开(公告)日：2015-10-29

申请号：US14260210

申请日：2014-04-23

Applicant: Applied Materials, Inc.

Inventor： Steven M. Zuniga ,  Brian J. Brown

IPC: B08B1/04 ,  B08B1/00

CPC classification number: B08B1/04 ,  B08B1/001 ,  B24B37/34 ,  H01L21/67046

Abstract: Embodiments of the invention include systems, methods and apparatus for pre-cleaning a substrate after chemical mechanical planarization processing. Embodiments provide a housing; a chuck assembly configured to securely hold a substrate within the housing; and a buffing pad assembly configured to rotate against the substrate while supported within the housing. The buffing pad assembly includes a buff pad, a compressible sub-pad coupled to the buff pad, and a pad holder coupled to the compressible sub-pad and a buffing motor configured to rotate the buffing pad assembly. Numerous additional aspects are disclosed.

Abstract translation: 本发明的实施例包括用于在化学机械平面化处理之后预清洁衬底的系统，方法和装置。 实施例提供一种壳体; 卡盘组件，其构造成将基板牢固地保持在所述壳体内; 以及抛光垫组件，其构造成在被支撑在所述壳体内时相对于所述衬底转动。 抛光垫组件包括抛光垫，耦合到抛光垫的可压缩子焊盘和耦合到可压缩子焊盘的焊盘保持器以及被配置为旋转抛光垫组件的抛光马达。 公开了许多附加方面。

公开(公告)号：US20150090299A1

公开(公告)日：2015-04-02

申请号：US14040571

申请日：2013-09-27

Applicant: Applied Materials, Inc.

Inventor： Brian J. Brown ,  Ekaterina Mikhaylichenko ,  Jonathan Frankel

IPC: H01L21/02

CPC classification number: H01L21/67057 ,  H01L21/67028

Abstract: In some embodiments, a module is provided that is configured to clean, rinse and dry a substrate. The module includes (1) a tank having an upper tank region positioned above a lower tank region, the upper tank region having (a) an opening through which a substrate is removed from the tank; (b) a first fluid supply configured to supply a first fluid to a surface of a substrate being removed from the tank; and (c) a first suction mechanism, positioned below the first fluid supply, wherein the first suction mechanism is configured to suction fluid supplied from the first fluid supply so as to deter the suctioned fluid from reaching the lower tank region; and (2) a drying vapor supply positioned above the first fluid supply and configured to supply a drying vapor to a surface of a substrate being removed from the tank. Numerous other aspects are provided.

Abstract translation: 在一些实施例中，提供了被配置为清洁，漂洗和干燥基底的模块。 模块包括（1）具有位于下罐区域上方的上罐区域的罐，上罐区域具有（a）开口，基板通过该开口从罐中移除; （b）构造成将第一流体供应到从罐中取出的基板的表面的第一流体供应; （c）位于第一流体供给部下方的第一吸引机构，其特征在于，所述第一吸引机构构成为吸入从所述第一流体供给源供给的流体，以阻止所述被吸引的流体到达所述下部箱体区域; 和（2）位于第一流体供应器上方的干燥蒸气供应器，其构造成将干燥蒸气供应到从罐中取出的基板的表面。 提供了许多其他方面。

公开(公告)号：US20250108477A1

公开(公告)日：2025-04-03

申请号：US18477159

申请日：2023-09-28

Applicant: Applied Materials, Inc.

Inventor： Huanbo Zhang ,  Ekaterina A. Mikhaylichenko ,  Jeonghoon Oh ,  Andrew Nagengast ,  Erik S. Rondum ,  Brian J. Brown ,  Zhize Zhu

IPC: B24B37/10 ,  B24B37/26 ,  B24B57/02

Abstract: A Chemical Mechanical Polishing (CMP) process may generally apply more pressure around a periphery of the polishing pad than at the center of the polishing pad. This may cause uneven material removal as the substrate moves along the surface of the polishing pad. Therefore, the polishing pad may include one or more recesses around a periphery of the polishing pad to relieve pressure on the substrate. The one or more recesses may be connected to channels that extend radially outward from the recesses to the edge of the polishing pad. The recesses may collect polishing slurry during the CMP process and direct the slurry into the channels. The channels may then expel the collected polishing slurry off of the polishing pad to clear the recesses.

公开(公告)号：US12198944B2

公开(公告)日：2025-01-14

申请号：US17202245

申请日：2021-03-15

Applicant: Applied Materials, Inc.

Inventor： Brian J. Brown ,  Ekaterina Mikhaylichenko ,  Jin Ji ,  Jagan Rangarajan ,  Steven M. Zuniga

IPC: H01L21/67 ,  B24B41/06

Abstract: Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) systems, and more particular, to modular polishing systems used in the manufacturing of semiconductor devices. In one embodiment, a polishing system includes a first portion having a plurality of polishing stations disposed therein, and a second portion coupled to the first portion, the second portion comprising a substrate cleaning system. The substrate cleaning system comprises a wet-in/dry-out substrate cleaning module comprising a chamber housing which defines a chamber volume. The polishing system further includes a substrate handler located in the second portion, where the substrate handler is positioned to transfer substrates to or from the wet-in/dry-out substrate cleaning module through one or more openings formed in one or more sidewalls of the chamber housing.

公开(公告)号：US20240269796A1

公开(公告)日：2024-08-15

申请号：US18437619

申请日：2024-02-09

Applicant: Applied Materials, Inc.

Inventor： Jimin Zhang ,  Jianshe Tang ,  Brian J. Brown

IPC: B24B37/005 ,  B24B37/34

CPC classification number: B24B37/005 ,  B24B37/34

Abstract: A method of performing polishing processes on substrates may include receiving a substrate in a known alignment in a carrier head of a polishing station for a polishing process. The polishing process may cause the substrate in the carrier head to be polished by a polishing pad on a platen such that the substrate passes over one or more sensors in the platen along one or more predetermined sensor paths relative to the known alignment of the substrate. The method may also include causing the carrier head to move to a first position based on the one or more predetermined sensor paths; causing the platen to move to a second position based on the one or more predetermined sensor paths; and causing the substrate to rotate relative to the platen such that the one or more sensors pass along the one or more predetermined sensor paths.

公开(公告)号：US12027382B2

公开(公告)日：2024-07-02

申请号：US17541540

申请日：2021-12-03

Applicant: Applied Materials, Inc.

Inventor： Brian K. Kirkpatrick ,  Ekaterina A. Mikhaylichenko ,  Brian J. Brown

IPC: H01L21/67 ,  B08B3/02 ,  B24B37/00 ,  H01L21/306

CPC classification number: H01L21/67051 ,  B08B3/024 ,  B08B3/02 ,  B24B37/00 ,  H01L21/30625

Abstract: Cleaning chambers may include a substrate support having a substrate seating position. The cleaning chambers may include a plurality of fluid nozzles facing the substrate support. Each fluid nozzle of the plurality of fluid nozzles may define a fluid port characterized by a leading edge and a trailing edge. Each fluid nozzle of the plurality of fluid nozzles may be angled relative to the substrate seating position of the substrate support to produce an interior angle of greater than or about 90° at an intersection location across the substrate seating position for a fluid delivered from each fluid nozzle at the leading edge of the fluid port.

公开(公告)号：US11931854B2

公开(公告)日：2024-03-19

申请号：US17716941

申请日：2022-04-08

Applicant: Applied Materials, Inc.

Inventor： Jimin Zhang ,  Jianshe Tang ,  Brian J. Brown ,  Wei Lu ,  Priscilla Diep LaRosa

IPC: B24B37/005 ,  B24B37/26 ,  H01L21/306 ,  H01L21/321

CPC classification number: B24B37/005 ,  B24B37/26 ,  H01L21/30625 ,  H01L21/3212

Abstract: A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration.

公开(公告)号：US11883923B2

公开(公告)日：2024-01-30

申请号：US17716941

申请日：2022-04-08

Applicant: Applied Materials, Inc.

Inventor： Jimin Zhang ,  Jianshe Tang ,  Brian J. Brown ,  Wei Lu ,  Priscilla Diep LaRosa

IPC: B24B37/005 ,  H01L21/321 ,  H01L21/306 ,  B24B37/26

CPC classification number: B24B37/005 ,  B24B37/26 ,  H01L21/30625 ,  H01L21/3212

Abstract: A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration.

公开(公告)号：US11298794B2

公开(公告)日：2022-04-12

申请号：US16688604

申请日：2019-11-19

Applicant: Applied Materials, Inc.

Inventor： Jimin Zhang ,  Jianshe Tang ,  Brian J. Brown ,  Wei Lu ,  Priscilla Diep

IPC: H01L21/306 ,  B24B37/005 ,  H01L21/321

Abstract: A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration.