摘要:
The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
摘要:
A nonvolatile semiconductor memory device using a NAND-type EEPROM includes a memory unit, a management unit, an erasure unit, and a control unit. The memory unit has a memory cell array divided into blocks each constituting a minimum quantity of data that may be erased. The management unit manages unused blocks. The erasure unit discriminates erased blocks of the unused blocks from non-erased blocks of the unused blocks to erase data stored in the non-erased blocks. The control unit writes data into at least one block of the unused blocks managed by the management unit. In the control unit, when a content of the written data is obtained by changing data recorded in a different block of the memory unit, and the data recorded on the another block is not necessary, the management unit receives information that the different block is an unused block. When the data recorded in the different block is necessary, a necessary part of the data recorded in the different block is copied to a block in which new data is to be written.
摘要:
A NAND-cell type EEPROM includes an array of memory cells connected to bit lines. Each cell includes one transistor with a floating gate and a control gate electrode, wherein electrons are tunneled to or from the floating gate to write a data thereinto. A sense/latch circuit is connected to the bit lines, and selectively performs a sense operation and a latch operation of the write data. A program controller is provided for writing the data into a selected memory cell in a designated area, and for reading the data written in the selected cell to verify whether or not its resultant threshold voltage falls within an allowable range. If it is insufficient, the data is rewritten thereinto. A rewrite-data setting section is provided for performing a logic operation with respect to a read data from the selected cell and the write data being latched in the sense/latch circuit, and for updating automatically a rewrite data being stored in the sense/latch circuit with respect to every bit line in accordance with the actual write state as being verified. The sense/latch circuit includes a CMOS flip-flop circuit, which acts as a data-latch at the beginning of the verify operation, and serves as a sense amplifier once after it is reset.
摘要:
A NOR operation is performed on the address bit by bit by a NOR circuit, and when the final address in a page is detected from the result of the NOR operation by a final address detection circuit, a program starting circuit executes data writing to a memory cell. This can ensure detection of the final address in a page without using a counter circuit. It is therefore possible to simplify the structure of the final address detection circuit and reduce the circuit area occupying in a semiconductor memory device.
摘要:
A microgap type surge absorber comprises a columnar insulator element being covered with a conductive material and provided with a microgap around the center thereof, a pair of conductive caps being fixed on the both ends of the element, first and second electrodes being attached to the both caps, first and second glass tubes adhering to the periphery of the first and second electrodes and surrounding the end parts of the element, and a cylindrical third electrode being held between the both glass tubes and adjacently surrounding the element containing the microgap. The first, second, and third electrodes and glass tubes are charged with inert gas. When a glow discharge started from near the microgap extends to the conductive coating and arrives at the caps, an arc discharge is formed between caps through the third electrode. The third electrode protects the microgap from arc discharge current.
摘要:
A method of and apparatus for controlling a fuel injection quantity for an internal combustion engine wherein the fuel injection quantity is controlled on the basis of both an intake-pipe pressure and a rotational speed of the engine. The output of a pressure sensor for detecting the intake-pipe pressure is processed by a CR filter having a time constant which enables removal of a pulsating component of the intake-pipe pressure. The output of the CR filter is relaxed to calculate a first weighted mean value with a relatively low degree of relaxation and a second weighted mean value with a relatively high degree of relaxation. The second weighted mean value is subtracted from the first weighted mean value, and an incremental/decremental quantity is determined on the basis of the result of the subtraction. The synchronous fuel injection quantity during acceleration or deceleration is corrected by the incremental/decremental quantity, and during acceleration the fuel is injected asynchronously on the basis of the incremental/decremental quantity.
摘要:
A wireless terminal device (TA) receives a downlink signal that is repeatedly transmitted from a pre registered home repeater when requesting communication, specifies an idle channel based on idle channel information that is included in the downlink signal, and using the frequency of the uplink signal of the idle channel requests communication permission from the relay device that provides the idle channel. When communication permission cannot be received from the relay device from which communication permission was previously requested, the wireless terminal device (TA) uses the same frequency as the frequency of the downlink signal from the home repeater to transmit a signal to the wireless terminal device (TB) of an intended other party requesting communication.
摘要:
In a memory system using a removable recording medium and data stored in the recording medium, identifying information for identifying each recording medium from others is held in the recording medium, and when data stored in the recording medium is used, the identifying information of the recording medium is required. As a result, when a flash memory card, etc. is used, a copyright is reliably protected.
摘要:
There is provided a wireless communication system which causes a wireless terminal to select a relay device among plural relay devices connected together via a communication line when the wireless terminal attempts to communicate with another wireless terminal. The relay device has an information acquiring unit, a calling determining unit, and an information adding unit. The wireless terminal has an information analyzing unit which analyzes whether or not the own device is included in a communication counterparty of calling information when the calling information is included in communication information, a priority comparing unit which determines whether or not a priority level of the calling information is higher than that of a current communication when the own device is included, and a channel changing unit which changes a channel to that of another relay device of the calling information when the priority level of the calling information is higher.
摘要:
Disclosed herein is a method for separating an arsenic mineral from a copper-bearing material, including the steps of grinding a copper-bearing material containing arsenic, adding water to the copper-bearing material to prepare a slurry, and adding a flotation agent including a depressant, a frother, and a collector to the slurry and blowing air into the slurry for performing flotation to obtain a copper concentrate, wherein the depressant is a chelator. As the chelator, a polyethyleneamine or the like is used. Particularly, when triethylenetetramine is used as the chelator, the amount of triethylenetetramine to be added is preferably 1 to 10 equivalents relative to the amount of soluble copper generated by oxidation of the copper-bearing material, and the pH of the slurry is more preferably adjusted to 7 or more but 8 or less before the slurry is subjected to the flotation.