公开(公告)号：US20240222445A1

公开(公告)日：2024-07-04

申请号：US17996260

申请日：2021-11-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie HUANG ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Nianqi YAO ,  Kun ZHAO ,  Tianmin ZHOU ,  Liping LEI

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78645

Abstract: A thin film transistor, an array substrate and a manufacturing method of the thin film transistor are provided, the thin film transistor includes a base substrate; and a first active layer, a first insulating layer and a second active layer, which are sequentially arranged on the base substrate, the first active layer is in contact with the second active layer through a first via hole structure located in the first insulating layer, and non-contacted portions of the first active layer and the second active layer are separated by the first insulating layer, the thin film transistor has a plurality of active layer structures, so that the charges are gathered on two surfaces of each of the active layers, and the number of the charges gathered on the surfaces of the active layers is multiplied, and the open state current of the thin film transistor is multiplied.

公开(公告)号：US20240212639A1

公开(公告)日：2024-06-27

申请号：US17913798

申请日：2021-09-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shuilang DONG ,  Ce NING ,  Guangcai YUAN ,  Hehe HU ,  Lizhong WANG ,  Nianqi YAO ,  Dapeng XUE ,  Liping LEI ,  Chen XU ,  Dongfang WANG ,  Zhengliang LI

IPC: G09G3/36

CPC classification number: G09G3/36 ,  G09G2310/0286 ,  G09G2310/061 ,  G09G2330/021

Abstract: Voltage providing unit, voltage providing method, display driving module and display device are provided. The voltage providing unit, applied to a display panel, is configured to provide a control voltage signal for a driving circuit, and the voltage providing unit includes a buck circuit and a first electrical level converting circuit. The buck circuit is configured to receive a first voltage signal and perform a buck operation on the first voltage signal to obtain a second voltage signal; and the first electrical level converting circuit is connected to the buck circuit, and is configured to receive an input control voltage, a third voltage signal and the second voltage signal, and to generate the control voltage signal in accordance with the input control voltage, the third voltage signal and the second voltage signal, a voltage value of the control voltage signal is less than a predetermined voltage value.

公开(公告)号：US20230060645A1

公开(公告)日：2023-03-02

申请号：US17800389

申请日：2021-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Kun ZHAO ,  Nianqi YAO

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/49 ,  H01L21/02 ,  H01L21/443 ,  H01L29/66

Abstract: A metal oxide thin film transistor is provided and includes a gate, a gate insulating layer, an active layer and a source-drain metal layer stacked on a side of a backplane, the active layer and the gate are provided on both sides of the gate insulating layer, the source-drain metal layer is provided on a side of the active layer away from the backplane, the active layer includes: a first metal oxide semiconductor layer provided on a side of the gate insulating layer away from the gate; a second metal oxide semiconductor layer provided on a surface of the first metal oxide semiconductor layer away from the gate.

公开(公告)号：US20220352283A1

公开(公告)日：2022-11-03

申请号：US17429935

申请日：2020-11-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Xue LIU

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.

公开(公告)号：US20220278162A1

公开(公告)日：2022-09-01

申请号：US17410677

申请日：2021-08-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO

IPC: H01L27/146 ,  H01L27/12

Abstract: An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

公开(公告)号：US20220276540A1

公开(公告)日：2022-09-01

申请号：US17504402

申请日：2021-10-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong WANG ,  Ce NING ,  Binbin TONG ,  Zhen ZHANG ,  Fuqiang LI ,  Zhenyu ZHANG

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: The disclosure provides an array substrate, a manufacturing method thereof and a display panel, and relates to the technical field of display. The array substrate comprises a first transistor arranged on one side of a substrate base, the first transistor being located in an active area of the array substrate; a flat layer covering the first transistor, the flat layer having a first through-hole; a first electrode layer arranged in the first through-hole, and being connected with a drain of the first transistor and having a first groove; a filling layer arranged in the first groove; and a second electrode layer arranged on a side, away from the first transistor, of the filling layer, the second electrode layer being connected with the first electrode layer. So an electric field for driving a liquid crystal layer is more uniform, thereby improving an aperture ratio of the display panel.

公开(公告)号：US20220186359A1

公开(公告)日：2022-06-16

申请号：US17485170

申请日：2021-09-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Nianqi YAO ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Dapeng XUE ,  Lizhong WANG ,  Shuilang DONG ,  Jie HUANG ,  Jiayu HE ,  Lubin SHI ,  Yancai LI

IPC: C23C14/50

Abstract: A fixture, a tray and a sputtering system. The fixture is internally provided with a support structure and a clamping structure connected with each other, wherein the clamping structure is configured to clamp a to-be-sputtered substrate; an orthographic projection of the clamping structure on a plane where the support structure is located and the support structure share an superimposed area and are separate in non-superimposed areas; wherein the support structure located in the non-superimposed area and/or the clamping structure located in the non-superimposed area has a first hollowed structure. The fixture is internally provided with the first hollowed structure, such that a part of an area of the to-be-sputtered substrate covered by the fixture may be exposed via the first hollowed structure when the fixture holds the to-be-sputtered substrate, so as to reduce the area of the to-be-sputtered substrate covered by the fixture.

公开(公告)号：US20210129140A1

公开(公告)日：2021-05-06

申请号：US16647386

申请日：2019-09-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen MA ,  Guangcai YUAN ,  Ce NING ,  Xin GU ,  Hehe HU

IPC: B01L3/00 ,  B01L9/00 ,  G01N21/63 ,  G01N21/05

Abstract: A microfluidic channel structure and a fabrication method thereof, a microfluidic detecting device and a detecting method thereof are disclosed. The microfluidic channel structure includes a support portion; a foundation portion, provided on the support portion and including a first foundation and a second foundation spaced apart from each other; and a channel defining portion, provided on a side of the foundation portion that is away from the support portion and including a first channel layer and a second channel layer, the first channel layer covering the first foundation and the second channel layer covering the second foundation have a gap therebtween to define a microfluidic channel; and the first channel layer and the second channel layer are made of a same material.

公开(公告)号：US20160005869A1

公开(公告)日：2016-01-07

申请号：US14416227

申请日：2014-04-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ke WANG ,  Seongyeol YOO ,  Ce NING ,  Wei YANG

IPC: H01L29/786 ,  H01L21/4763 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L21/47635 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78606

Abstract: Provided are oxide thin-film transistor and display device employing the same, and method for manufacturing an oxide thin-film transistor array substrate. A source electrode and a drain electrode are located below an oxide active layer pattern, and a gate electrode is located below the source electrode and the drain electrode, and the gate insulating layer is located between the gate electrode and the source electrode/the drain electrode.

Abstract translation: 提供了氧化物薄膜晶体管和采用该氧化物薄膜晶体管的显示装置，以及制造氧化物薄膜晶体管阵列基板的方法。 源电极和漏极位于氧化物有源层图案的下方，栅电极位于源极和漏电极的下方，栅极绝缘层位于栅电极和源电极/漏电极之间 。

公开(公告)号：US20250164844A1

公开(公告)日：2025-05-22

申请号：US19032853

申请日：2025-01-21

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yunping DI ,  Lizhong WANG ,  Ce NING ,  Binbin TONG ,  Liping LEI ,  Jianbo XIAN

IPC: G02F1/1368 ,  G02F1/1362 ,  H10D86/01 ,  H10D86/40 ,  H10D86/60

Abstract: Provided is a substrate. The substrate includes a base substrate; and a plurality of sub-pixel structures arranged in an array on the base substrate, wherein the sub-pixel structure comprises: a thin film transistor disposed on the base substrate, the thin film transistor comprising a source and a drain; an insulating layer disposed on a side of the thin film transistor distal from the base substrate, a first via hole being formed in the insulating layer; a pixel electrode disposed on a side of the insulating layer distal from the base substrate, the pixel electrode being electrically connected to either the source or the drain through the first via hole; and a filling block disposed at the first via hole.