公开(公告)号：US20110059576A1

公开(公告)日：2011-03-10

申请号：US12926042

申请日：2010-10-22

Applicant: Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

Inventor： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

IPC: H01L21/02

CPC classification number: H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

Abstract translation: 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。

公开(公告)号：US20070267675A1

公开(公告)日：2007-11-22

申请号：US11798703

申请日：2007-05-16

Applicant: Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

Inventor： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

IPC: H01L29/94 ,  H01L21/8242

CPC classification number: H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

Abstract translation: 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。

公开(公告)号：US07282446B2

公开(公告)日：2007-10-16

申请号：US10819143

申请日：2004-04-07

Applicant: In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

Inventor： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC: H01L21/302

CPC classification number: B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

Abstract: A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

Abstract translation: 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US07170843B2

公开(公告)日：2007-01-30

申请号：US10610540

申请日：2003-07-02

Applicant: Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

Inventor： Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

IPC: H01J3/14

CPC classification number: B82Y10/00 ,  G11B9/08 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1472 ,  G11B9/149 ,  G11B11/08 ,  G11B13/06

Abstract: A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer. The data storage apparatus includes a stage supporting a data storage medium, which includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer, a scanner driving the stage, a probe placed over the data storage medium and including a tip forming an electric field with the data storage medium and a cantilever supporting the tip placed at its one end so as to maintain a predetermined distance between the data storage medium and the tip, a circuit unit applying a driving signal, a data write signal, and a data erase signal to the scanner and the probe and detecting a data read signal, and a light source irradiating light on the data storage medium.

Abstract translation: 提供高密度数据存储介质，数据存储介质的制造方法，高密度数据存储装置以及通过使用数据存储装置从数据存储介质写数据和读取和擦除数据的方法 。 数据存储介质包括下电极，沉积在下电极上的绝缘层，沉积在绝缘层上的光电子发射层，并且具有多个突起，由于突起和光子之间的碰撞而从其中发射光电子;以及电介质 层沉积在光电子发射层上并存储从光电子发射层发射的光电子。 该数据存储装置包括支持数据存储介质的载台，该载台包括下电极，沉积在下电极上的绝缘层，沉积在绝缘层上的光电子发射层，并且具有多个突起，由于 突起和光子之间的碰撞，以及沉积在光电子发射层上并存储从光电子发射层发射的光电子的介电层，驱动载物台的扫描仪，放置在数据存储介质上的探针，并且包括形成电场的尖端 数据存储介质和悬臂支撑设置在其一端的尖端，以便保持数据存储介质和尖端之间的预定距离，施加驱动信号的电路单元，数据写入信号和数据擦除信号 扫描仪和探头，并检测数据读取信号，以及光源照射数据 存储介质。

公开(公告)号：US20060197082A1

公开(公告)日：2006-09-07

申请号：US11363235

申请日：2006-02-28

Applicant: Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

Inventor： Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

IPC: H01L29/18

CPC classification number: H01L29/7869 ,  H01L29/78681 ,  H01L49/003

Abstract: A transistor using a physical property-changing layer, a method of operating the transistor, and a method of manufacturing the transistor are provided. The transistor may include an insulation layer formed on a substrate, the first and second conductive layer patterns, the physical property-changing layer, a dielectric layer, for example, a high dielectric layer, and a gate electrode. The first and second conductive layer patterns may be spaced apart from each other on the insulation layer. The physical property-changing layer may be formed on a portion of the insulation layer between the first and second conductive layer patterns. The dielectric layer may be stacked on the physical property-changing layer and the gate electrode may be formed on the high dielectric layer.

Abstract translation: 提供了使用物理性质改变层的晶体管，晶体管的操作方法和晶体管的制造方法。 晶体管可以包括形成在衬底上的绝缘层，第一和第二导电层图案，物理性质改变层，介电层，例如高电介质层和栅电极。 第一和第二导电层图案可以在绝缘层上彼此间隔开。 物理变化层可以形成在第一和第二导电层图案之间的绝缘层的一部分上。 电介质层可以堆叠在物理变化层上，并且栅电极可以形成在高电介质层上。

公开(公告)号：US07015500B2

公开(公告)日：2006-03-21

申请号：US10361024

申请日：2003-02-10

Applicant: Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

Inventor： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

IPC: H01B7/08 ,  H01L35/24

CPC classification number: B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  Y10S977/943

Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

Abstract translation: 一种由碳纳米管存储器件及其形成方法形成的快速，可靠，高度集成的存储器件，其中碳纳米管存储器件包括衬底，源电极，漏电极，具有高电的碳纳米管和 热导率，具有优异电荷存储能力的存储单元和栅电极。 源电极和漏电极在它们之间以预定间隔布置在衬底上并经受电压。 碳纳米管将源电极连接到漏电极并用作电荷运动的通道。 存储单元位于碳纳米管之上，并存储来自碳纳米管的电荷。 栅电极形成为与存储单元的上表面接触，并控制从碳纳米管流入存储单元的电荷量。

公开(公告)号：US06999346B2

公开(公告)日：2006-02-14

申请号：US10774456

申请日：2004-02-10

Applicant: In-kyeong Yoo ,  Byong-man Kim

Inventor： In-kyeong Yoo ,  Byong-man Kim

IPC: G11C13/07

CPC classification number: B82Y10/00 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

Abstract: A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.

公开(公告)号：US20050036379A1

公开(公告)日：2005-02-17

申请号：US10950582

申请日：2004-09-28

Applicant: Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

Inventor： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

IPC: G11C11/15 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/22 ,  H01L29/788 ,  H01L29/792 ,  H01L43/08 ,  G11C11/14

CPC classification number: H01L27/228 ,  B82Y10/00

Abstract: A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

公开(公告)号：US06838727B2

公开(公告)日：2005-01-04

申请号：US10602736

申请日：2003-06-25

Applicant: In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

Inventor： In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

IPC: H01L27/10 ,  G11C11/401 ,  G11C11/404 ,  G11C16/04 ,  H01L21/00 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/112 ,  H01L29/792 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L49/02

CPC classification number: H01L27/11206 ,  G11C16/0475 ,  H01L27/112

Abstract: A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data “0” or “1” is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.

Abstract translation: 具有一个晶体管和一个电阻元件作为存储装置的存储器件和用于驱动存储器件的方法包括形成在半导体衬底上的NPN型晶体管，形成在半导体衬底上以覆盖晶体管的层间绝缘膜， 形成暴露晶体管的源极区域的接触孔，通过导电插塞或绝缘膜将位数据“0”或“1”写入的电阻材料连接到晶体管的源极区域，并且导电 板接触抵抗材料。 存储器件通过延长其刷新周期而呈现出提高的集成度，降低的电流消耗，并且由于简单的存储单元结构而享有简化的制造工艺。

公开(公告)号：US08526288B2

公开(公告)日：2013-09-03

申请号：US13297713

申请日：2011-11-16

Applicant: Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

Inventor： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

IPC: G11B7/00

CPC classification number: G11C13/06 ,  G02B5/008 ,  G02F2203/10

Abstract: An optical element and an information storage device including the same. The optical element may include an optical waveguide structure for transforming circularly polarized light into plasmon and transmitting the plasmon. The optical waveguide structure may emit a circularly polarized plasmonic field. The optical element may be used in an information storage device. For example, the information storage device may include a recording medium and a recording element for recording information on the recording medium, and the recording element may include the optical element. The information may be recorded on the recording medium by using the circularly polarized plasmonic field generated by the optical element.

Abstract translation: 光学元件和包括该元件的信息存储装置。 光学元件可以包括用于将圆偏振光转换成等离子体并传输等离子体的光波导结构。 光波导结构可以发射圆偏振等离子体场。 光学元件可以用在信息存储装置中。 例如，信息存储装置可以包括用于在记录介质上记录信息的记录介质和记录元件，并且记录元件可以包括光学元件。 信息可以通过使用由光学元件产生的圆偏振等离子体场来记录在记录介质上。