公开(公告)号：US08306597B2

公开(公告)日：2012-11-06

申请号：US12721513

申请日：2010-03-10

申请人： Wen-Ying Chang ,  Cheng-Hung Chang

发明人： Wen-Ying Chang ,  Cheng-Hung Chang

IPC分类号： A61B5/1455 ,  A61B6/00

CPC分类号： A61B5/02427 ,  A61B5/02438 ,  A61B5/14532 ,  A61B5/14552 ,  A61B2562/0233 ,  A61B2562/043 ,  A61B2562/046 ,  A61B2562/146 ,  A61B2562/164 ,  A61B2562/223 ,  G01N21/474 ,  G01N21/49 ,  G01N2021/3144

摘要： A physiological signal sensing device for examination of human is provided. The physiological signal sensing device includes a light emitting fiber and a light receiving fiber. The light emitting fiber includes a plurality of light emitting portions, wherein the light emitting fiber provides a plurality of sensing beams, and the sensing beams are respectively emitted through the light emitting portions. The light receiving fiber includes a plurality of light receiving portions. The light receiving fiber corresponds to the light emitting fiber. The sensing beams are emitted through the light emitting portions, reflected or refracted by the human. And then the sensing beams are received by the light receiving portions.

摘要翻译： 提供了一种用于人体检查的生理信号感测装置。 生理信号感测装置包括发光光纤和光接收光纤。 发光光纤包括多个发光部分，其中发光光纤提供多个感测光束，并且感测光束分别通过发光部分发射。 光接收光纤包括多个光接收部分。 光接收光纤对应于发光光纤。 感测光束通过发光部分发射，被人体反射或折射。 然后感光束被光接收部分接收。

公开(公告)号：US20110118574A1

公开(公告)日：2011-05-19

申请号：US12721513

申请日：2010-03-10

申请人： Wen-Ying Chang ,  Cheng-Hung Chang

发明人： Wen-Ying Chang ,  Cheng-Hung Chang

IPC分类号： A61B5/1455 ,  A61B6/00

CPC分类号： A61B5/02427 ,  A61B5/02438 ,  A61B5/14532 ,  A61B5/14552 ,  A61B2562/0233 ,  A61B2562/043 ,  A61B2562/046 ,  A61B2562/146 ,  A61B2562/164 ,  A61B2562/223 ,  G01N21/474 ,  G01N21/49 ,  G01N2021/3144

摘要： A physiological signal sensing device for examination of human is provided. The physiological signal sensing device includes a light emitting fiber and a light receiving fiber. The light emitting fiber includes a plurality of light emitting portions, wherein the light emitting fiber provides a plurality of sensing beams, and the sensing beams are respectively emitted through the light emitting portions. The light receiving fiber includes a plurality of light receiving portions. The light receiving fiber corresponds to the light emitting fiber. The sensing beams are emitted through the light emitting portions, reflected or refracted by the human. And then the sensing beams are received by the light receiving portions.

摘要翻译： 提供了一种用于人体检查的生理信号感测装置。 生理信号感测装置包括发光光纤和光接收光纤。 发光光纤包括多个发光部分，其中发光光纤提供多个感测光束，并且感测光束分别通过发光部分发射。 光接收光纤包括多个光接收部分。 光接收光纤对应于发光光纤。 感测光束通过发光部分发射，被人体反射或折射。 然后感光束被光接收部分接收。

公开(公告)号：US20070149282A1

公开(公告)日：2007-06-28

申请号：US11519229

申请日：2006-09-12

申请人： Ying-Ko Lu ,  Ming-Jye Tsai ,  Shun-Nan Liou ,  Cheng-Hung Chang

发明人： Ying-Ko Lu ,  Ming-Jye Tsai ,  Shun-Nan Liou ,  Cheng-Hung Chang

IPC分类号： A63F9/24

CPC分类号： A63F13/212 ,  A63F13/06 ,  A63F13/211 ,  A63F13/235 ,  A63F13/428 ,  A63F2009/2402 ,  A63F2009/2408 ,  A63F2009/243 ,  A63F2009/2436 ,  A63F2300/1012 ,  A63F2300/105 ,  A63F2300/204

摘要： The present invention relates to an interactive gaming method and apparatus with emotion perception ability, by which not only gestures of a user can be detected and used as inputs for controlling a game, but also physiological attributes of the user such as heart beats, galvanic skin response (GSR), etc., can be sensed and used as emotional feedbacks of the game affecting the user. According to the disclosed method, the present invention further provides an interactive gaming apparatus that will interpret the signals detected by the inertial sensing module and the bio sensing module and use the interpretation as a basis for evaluating the movements and emotions of a user immediately, and then the evaluation obtained by the interactive gaming apparatus is sent to the gaming platform to be used as feedbacks for controlling the game to interact with the user accordingly. Therefore, by the method and apparatus according to the present invention, not only the harmonics of human motion can be trained to improve, but also the self-control of a user can be enhanced.

摘要翻译： 本发明涉及具有情绪感知能力的交互式游戏方法和装置，通过该游戏方法和装置不仅可以检测用户的手势并将其用作控制游戏的输入，还包括用户的生理属性，例如心跳，电流皮肤 响应（GSR）等可被感知并用作影响用户的游戏的情感反馈。 根据所公开的方法，本发明还提供了一种交互式游戏装置，其将解释由惯性感测模块和生物传感模块检测到的信号，并将该解释用作立即评估用户的运动和情绪的基础，以及 那么由交互式游戏装置获得的评估被发送到游戏平台，以被用作控制游戏的反馈，以相应地与用户交互。 因此，通过根据本发明的方法和装置，不仅可以训练人体运动的谐波以改善，而且可以提高用户的自我控制。

公开(公告)号：US20060226786A1

公开(公告)日：2006-10-12

申请号：US11260011

申请日：2005-10-26

申请人： Chaung Lin ,  Ken-Chyang Leou ,  Cheng-Hung Chang ,  Kai-Mu Hsiao

发明人： Chaung Lin ,  Ken-Chyang Leou ,  Cheng-Hung Chang ,  Kai-Mu Hsiao

IPC分类号： H01J7/24

CPC分类号： H01J37/3299 ,  H01J37/321

摘要： An inductively-coupled plasma etch apparatus and a feedback control method thereof are provided. A voltage/current measuring device is connected to an electrostatic chuck of the plasma etching apparatus, so as to measure the RF current, voltage and the phase angle between them on the electrostatic chuck. The ion current and the RF bias voltage are obtained by calculation of the RF current, voltage and the phase angle. Finally, using the obtained ion current and the RF bias voltage to feedback control the RF power generator in order to achieve the desired plasma status.

摘要翻译： 提供了电感耦合等离子体蚀刻装置及其反馈控制方法。 电压/电流测量装置连接到等离子体蚀刻装置的静电卡盘，以便测量静电卡盘上的RF电流，电压和它们之间的相位角。 通过计算RF电流，电压和相位角获得离子电流和RF偏置电压。 最后，使用获得的离子电流和RF偏置电压来反馈控制RF发生器，以实现期望的等离子体状态。

公开(公告)号：US07119404B2

公开(公告)日：2006-10-10

申请号：US10849689

申请日：2004-05-19

申请人： Cheng-Hung Chang ,  Weng Chang ,  Chu-Yun Fu

发明人： Cheng-Hung Chang ,  Weng Chang ,  Chu-Yun Fu

IPC分类号： H01L31/62 ,  H01L21/8238

CPC分类号： H01L29/7845 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7846

摘要： Strained channel transistors including a PMOS and NMOS device pair to improve an NMOS device performance without substantially degrading PMOS device performance and method for forming the same, the method including providing a semiconductor substrate; forming strained shallow trench isolation regions in the semiconductor substrate; forming PMOS and NMOS devices on the semiconductor substrate including doped source and drain regions; forming a tensile strained contact etching stop layer (CESL) over the PMOS and NMOS devices; and, forming a tensile strained dielectric insulating layer over the CESL layer.

摘要翻译： 包括PMOS和NMOS器件对的应变沟道晶体管，以改善NMOS器件性能而不会使PMOS器件性能基本上降低，并且用于形成PMOS器件性能的方法，所述方法包括提供半导体衬底; 在半导体衬底中形成应变浅沟槽隔离区; 在包括掺杂源极和漏极区域的半导体衬底上形成PMOS和NMOS器件; 在PMOS和NMOS器件上形成拉伸应变接触蚀刻停止层（CESL）; 并在CESL层上形成拉伸应变电介质绝缘层。

公开(公告)号：US20060154481A1

公开(公告)日：2006-07-13

申请号：US10905517

申请日：2005-01-07

申请人： Zhen-Cheng Wu ,  Cheng-Hung Chang ,  Yu-Lien Huang ,  Shwang-Ming Cheng

发明人： Zhen-Cheng Wu ,  Cheng-Hung Chang ,  Yu-Lien Huang ,  Shwang-Ming Cheng

IPC分类号： H01L21/44

CPC分类号： H01L21/76888 ,  H01L21/3003 ,  H01L29/665

摘要： Disclosed herein are various embodiments of semiconductor devices and related methods of manufacturing a semiconductor device. In one embodiment, a method includes providing a semiconductor substrate and forming a metal silicide on the semiconductor substrate. In addition, the method includes treating an exposed surface of the metal silicide with a hydrogen/nitrogen-containing compound to form a treated layer on the exposed surface, where the composition of the treated layer hinders oxidation of the exposed surface. The method may then further include depositing a dielectric layer over the treated layer and the exposed surface of the metal silicide.

摘要翻译： 这里公开了半导体器件的各种实施例和制造半导体器件的相关方法。 在一个实施例中，一种方法包括提供半导体衬底并在半导体衬底上形成金属硅化物。 此外，该方法包括用含氢/氮化合物处理金属硅化物的暴露表面以在暴露表面上形成处理层，其中处理层的组成阻碍了暴露表面的氧化。 该方法可以进一步包括在经处理的层和金属硅化物的暴露表面上沉积介电层。

公开(公告)号：US20060024879A1

公开(公告)日：2006-02-02

申请号：US10902973

申请日：2004-07-31

申请人： Chu-Yun Fu ,  Cheng-Hung Chang

发明人： Chu-Yun Fu ,  Cheng-Hung Chang

IPC分类号： H01L21/8238 ,  H01L21/31

CPC分类号： H01L21/0214 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/7842 ,  H01L29/7843

摘要： A MOSFET device pair with improved drive current and a method for producing the same to selectively introduce strain into a respective N-type and P-type MOSFET device channel region, the method including forming a compressive stressed nitride layer on over the P-type MOSFET device and a tensile stressed nitride layer on the N-type MOSFET device followed by forming a PMD layer having a less compressive or tensile stress.

摘要翻译： 一种具有改进的驱动电流的MOSFET器件对及其制造方法，用于选择性地将应变引入相应的N型和P型MOSFET器件沟道区，该方法包括在P型MOSFET上形成压应力氮化物层 器件和N型MOSFET器件上的拉伸应力氮化物层，随后形成具有较小压缩或拉伸应力的PMD层。

公开(公告)号：US20150204041A1

公开(公告)日：2015-07-23

申请号：US14159482

申请日：2014-01-21

申请人： Cheng-Hung Chang

发明人： Cheng-Hung Chang

IPC分类号： E02D1/02 ,  H04W4/00 ,  G01N21/00 ,  G01N33/24 ,  G01N7/00 ,  G01N27/02 ,  G01N33/00 ,  G01N27/416 ,  G05B15/02 ,  G01N25/56

CPC分类号： E02D1/022 ,  G01N33/004 ,  G01N33/24 ,  G01N35/00871 ,  G05B15/02 ,  H04W4/70

摘要： A two-tier wireless soil measurement apparatus is disclosed, including a top head and a plurality of sensors, wherein top head being placed above soil surface and the plurality of sensors being scattered under soil; each sensor including a sensor housing, first communication module, sensor unit and power module; the sensor unit sensing a soil condition and generating soil data representing the soil condition, the first communication module transmitting the soil data wirelessly to top head, and the power module providing power for sensor unit and first communication module; the top head including a first communication module, controller, second communication module and power module; the first communication module receiving soil data from first communication modules of sensors, the controller processing soil data, the second communication module transmitting the soil data wirelessly to a data station, and power module providing power to first communication module, controller and second communication module.

摘要翻译： 公开了一种两层无线土壤测量装置，包括顶部头和多个传感器，其中顶部头部放置在土壤表面上方，并且多个传感器在土壤下分散; 每个传感器包括传感器壳体，第一通信模块，传感器单元和功率模块; 传感器单元感测土壤条件并产生表示土壤条件的土壤数据，第一通信模块将土壤数据无线发送到顶部头，功率模块为传感器单元和第一通信模块提供电力; 所述顶部头部包括第一通信模块，控制器，第二通信模块和电源模块; 所述第一通信模块从传感器的第一通信模块接收土壤数据，所述控制器处理土壤数据，所述第二通信模块以无线方式将土壤数据发送到数据站，以及向第一通信模块，控制器和第二通信模块提供功率的功率模块。

公开(公告)号：US20080179689A1

公开(公告)日：2008-07-31

申请号：US11669870

申请日：2007-01-31

申请人： Tan-Chen Lee ,  Chung-Te Lin ,  Kuang-Hsin Chen ,  Chi-Hsi Wu ,  Di-Houng Lee ,  Cheng-Hung Chang

发明人： Tan-Chen Lee ,  Chung-Te Lin ,  Kuang-Hsin Chen ,  Chi-Hsi Wu ,  Di-Houng Lee ,  Cheng-Hung Chang

IPC分类号： H01L29/78 ,  H01L21/441

CPC分类号： H01L21/28518 ,  H01L21/76829 ,  H01L29/665

摘要： Disclosed herein are various embodiments of techniques for preventing silicide stringer or encroachment formation during metal salicide formation in semiconductor devices. The disclosed technique involves depositing a protective layer, such as a nitride or other dielectric layer, over areas of the semiconductor device where metal silicide formation is not desired because such formation detrimentally affects device performance. For example, silicon particles that may remain in device features that are formed through silicon oxidation, such as under the gate sidewall spacers and proximate to the perimeter of shallow trench isolation structures, are protected from reacting with metal deposited to form metal silicide in certain areas of the device. As a result, silicide stringers or encroachment in undesired areas is reduced or eliminated by the protective layer.

摘要翻译： 本文公开了用于在半导体器件中的金属自对准硅化物形成期间防止硅化物纵梁或侵入形成的技术的各种实施例。 所公开的技术包括在不需要金属硅化物形成的半导体器件的区域上沉积诸如氮化物或其它电介质层的保护层，因为这种形成不利地影响器件性能。 例如，可以保留在通过硅氧化形成的器件特征中的硅颗粒，例如在栅极侧壁间隔物附近并且靠近浅沟槽隔离结构的周边，防止在某些区域沉积以形成金属硅化物的金属反应 的设备。 结果，通过保护层减少或消除了硅化物桁条或侵入不期望的区域。

公开(公告)号：US20060157776A1

公开(公告)日：2006-07-20

申请号：US11039159

申请日：2005-01-20

申请人： Cheng-Hung Chang ,  Hsiao-Tzu Lu ,  Chu-Yun Fu ,  Weng Chang ,  Shwang-Ming Jeng

发明人： Cheng-Hung Chang ,  Hsiao-Tzu Lu ,  Chu-Yun Fu ,  Weng Chang ,  Shwang-Ming Jeng

IPC分类号： H01L29/792

CPC分类号： H01L23/3192 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/00

摘要： System and method for improving the process performance of a contact module. A preferred embodiment comprises improving the process performance of a contact module by reducing surface variations of an interlayer dielectric. The interlayer dielectric comprises a plurality of layers, a first layer (for example, a contact etch stop layer 610) protects devices on a substrate from subsequent etching operations, while a second layer (for example, a first dielectric layer 620) covers the first layer. A third layer (for example, a second dielectric layer 630) fills gaps that may be due to the topography of the devices. A fourth layer (for example, a third dielectric layer 640), brings the interlayer dielectric layer to a desired thickness and is formed using a process that yields a very flat surface completes the interlayer dielectric. Using multiple layers permit the elimination of variations (filling gaps and leveling bumps) without resorting to chemical-mechanical polishing.

摘要翻译： 提高接触模块工艺性能的系统和方法。 优选实施例包括通过减少层间电介质的表面变化来提高接触模块的工艺性能。 层间电介质包括多层，第一层（例如，接触蚀刻停止层610）保护衬底上的器件免受后续蚀刻操作，而第二层（例如，第一介电层620）覆盖第一层 层。 第三层（例如，第二介电层630）填充可能是由于器件的形貌造成的间隙。 第四层（例如，第三介电层640）使得层间电介质层达到期望的厚度并且使用产生非常平坦的表面的工艺形成来完成层间电介质。 使用多层可以消除变化（填充间隙和调平凸起），而无需采用化学机械抛光。