摘要:
A semiconductor device comprises at least one first semiconductor layer (1-4) and a second layer (8) applied on at least a surface portion of the first layer for protecting the device. The protecting layer is of a second material having a larger energy gap between the valence band and the conduction band than a first material forming said first layer. The second material has at least in one portion of said protecting layer a nano-crystalline and amorphous structure by being composed of crystalline gains with a size less than 100 nm and a resistivity at room temperature exceeding 1×1010 &OHgr;cm.
摘要:
A field controlled semiconductor device of SiC has a drain, a highly doped substrate layer on top of the drain and a low doped n-type drift layer on top of the substrate layer. A p-type base layer is located on the drift layer and a vertical trench extends through the base layer. In the trench an n-type channel region extends vertically along a wall of the trench and connects a source region layer to the drift layer. A gate electrode is arranged in the trench to be on the opposite side of the channel region with respect to the base layer.
摘要:
The present invention relates to a method for producing a semiconductor device having a semiconductor layer of SiC. The method comprises the steps of a) applying a mask on at least a portion of the SiC layer to coat a first portion of the SiC layer leaving a second portion thereof uncoated, b) applying a heat treatment to the SiC layer, and c) supplying dopants to the SiC layer during the heat treatment for diffusion of the dopants into the SiC layer at the second portion thereof for doping the SiC layer. The mask is made of crystalline AIN as the only component or AIN as a major component of a crystalline alloy constituting the material.
摘要:
A machine for applying labels to products of various sizes employs a movable printer/applicator head. Control circuitry responsive to sensors located along a conveyor by which the products are moved toward the machine generates output signals to an electrical motor which drives the printer/applicator head at a speed defined by the processor output signals. Labels to be printed are supplied to the head from a label supply strip wound on a label supply reel mounted on the stationary part of the machine. The portion of the strip extending between the reel and the head is provided with a loop to assure sufficient length of the strip for free movement by the head. The strip is lengthened by an amount less than the length of a label each time a label is removed and is lengthened by an additional amount each time a short-loop condition is detected. A pick plate assembly for removing unwanted labels is maintained in a retracted position along one side of the head when not in use, in order to avoid interference with the products to be labeled.
摘要:
An integral air inlet which in use admits filtered gases into a fluid container, especially infusion fluid containers, comprises a needle sealed to a housing which is closed by an air filter, the housing having disposed within it a duck bill valve which permits gas to flow from the outside and into the fluid container. The presence of the duck bill valve prevents fluid contacting the air filter thereby reducing the risk of bacterial contamination the fluid when gas is admitted.
摘要:
In one aspect, the present invention contemplates a strapping station that integrates with a machine for wrapping and clamping a strap around a load, particularly a palletized load. The strapping station includes a transfer conveyor and a compression conveyor that is supported to be lowered onto the upper surface of a load to apply pressure to or compress the load during the strapping operation. The compression conveyor is maintained in that position, continuously applying pressure to the load, even as the load is moved for the application of straps at different locations.
摘要:
Collecting user preference information related to a playing media recording is accomplished by gathering descriptive information related to the playing media recording from a media player program presenting the playing media recording and determining if tags are embedded in the media recording and gathering descriptive information related to the playing media recording from the tags embedded in the playing media recording, if the tags exist. Further, determining if a table of contents exists on the media recording and gathering a table of contents for a collection containing the playing media recording by identifying the collection using a concatenation of track lengths identifier generation technique, the table of contents exists. Then assembling the descriptive information into a media recording information packet and sending the media recording information packet to a server computer, resulting in a collection of user preference information related to the playing media recording.
摘要:
A semiconductor device comprises a first layer (1) of a wide band gap semiconductor material doped according to a first conductivity type and a second layer (3) on top thereof designed to form a junction blocking current in the reverse biased state of the device at the interface to said first layer. The device comprises extension means for extending a termination of the junction laterally with respect to the lateral border (6) of the second layer. This extension means comprises a plurality of rings (16-21) in juxtaposition laterally surrounding said junction (15) and being arranged as seen in the lateral direction away from said junction alternatively a ring (16-18) of a semiconductor material of a second conductivity type opposite to that of said first layer and a ring (19-21) of a semi-insulating material.
摘要:
Method for producing a field effect transistor having a source region (9), a drain region and a channel layer (11) interconnecting the source and drain regions, and including the step of providing a sacrificial layer (4) on part of a semiconductor material (1) whose edge is used to define the edge of an implant, such as the source region (9), in the semiconductor material (1), where the edge (4c) of the sacrificial layer (4) is subsequently used to define the edge of a gate (16).
摘要:
A unipolar semiconductor device having a drift layer (3) doped according to a first conductivity type forming a conducting path and regions (7, 8) doped according to a second conductivity type and arranged next to the drift layer, has the drift layer and the regions of a semiconductor material having an ionization energy Ei of dopants of the second conductivity type therein exceeding 0.5 eV and/or a solubility of the dopants of the second conductivity type therein being less than 1018 cm−3.