公开(公告)号：US07811427B2

公开(公告)日：2010-10-12

申请号：US11685118

申请日：2007-03-12

Applicant: Adam L. Cohen ,  Daniel I. Feinberg ,  Christopher A. Bang

Inventor： Adam L. Cohen ,  Daniel I. Feinberg ,  Christopher A. Bang

IPC: C25D17/06

CPC classification number: B81C3/002 ,  B81B2201/042 ,  B81C3/008 ,  B81C2203/051 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H01P11/007 ,  H05K3/4647

Abstract: Permanent or temporary alignment and/or retention structures for receiving multiple components are provided. The structures are preferably formed monolithically via a plurality of deposition operations (e.g. electrodeposition operations). The structures typically include two or more positioning fixtures that control or aid in the positioning of components relative to one another, such features may include (1) positioning guides or stops that fix or at least partially limit the positioning of components in one or more orientations or directions, (2) retention elements that hold positioned components in desired orientations or locations, and/or (3) positioning and/or retention elements that receive and hold adjustment modules into which components can be fixed and which in turn can be used for fine adjustments of position and/or orientation of the components.

Abstract translation: 提供用于接收多个部件的永久或临时对准和/或保持结构。 优选地，这些结构通过多个沉积操作（例如电沉积操作）一体地形成。 结构通常包括两个或更多个控制或辅助部件相对于彼此的定位的定位夹具，这些特征可以包括（1）定位引导件或止动件，其固定或至少部分地限制部件在一个或多个取向中的定位 或方向，（2）将定位的部件保持在期望的取向或位置的保持元件，和/或（3）接收和保持调节模块的定位和/或保持元件，组件可以被固定到其中， 微调零件的位置和/或方位。

公开(公告)号：US20100133952A1

公开(公告)日：2010-06-03

申请号：US12637659

申请日：2009-12-14

Applicant: Christopher A. Bang ,  Adam L. Cohen ,  Michael S. Lockard ,  John D. Evans

Inventor： Christopher A. Bang ,  Adam L. Cohen ,  Michael S. Lockard ,  John D. Evans

IPC: H02N1/00 ,  C25D5/10 ,  C25D5/02

CPC classification number: H02N1/008 ,  B33Y10/00 ,  B81C1/0019 ,  C25D1/003

Abstract: Various embodiments of the invention are directed to various microdevices including sensors, actuators, valves, scanning mirrors, accelerometers, switches, and the like. In some embodiments the devices are formed via electrochemical fabrication (EFAB®).

Abstract translation: 本发明的各种实施例涉及包括传感器，致动器，阀，扫描反射镜，加速度计，开关等的各种微型装置。 在一些实施例中，通过电化学制造（EFAB）形成器件。

公开(公告)号：US20100006443A1

公开(公告)日：2010-01-14

申请号：US12504496

申请日：2009-07-16

Applicant: Adam L. Cohen ,  Michael S. Lockard ,  Christopher A. Bang ,  Marvin M. Kilgo, III

Inventor： Adam L. Cohen ,  Michael S. Lockard ,  Christopher A. Bang ,  Marvin M. Kilgo, III

IPC: C25D5/02 ,  C25D7/00

CPC classification number: C25D1/003 ,  B23H3/00 ,  B23H9/00 ,  C25D5/022 ,  C25D5/10 ,  G03F7/00

Abstract: Embodiments of the invention are directed to the formation of beam-like structures using electrochemical fabrication techniques where the beam like structures have narrow regions and wider regions such that a beam of desired compliance is obtained. In some embodiments, narrower regions of the beam are thinner than a minimum feature size but are formable as a result of the thicker regions. In some embodiments the beam-like structures are formed from a plurality of adhered layers.

Abstract translation: 本发明的实施例涉及使用电化学制造技术形成束状结构，其中束状结构具有窄区域和较宽区域，使得获得所需柔性束。 在一些实施例中，光束的较窄区域比最小特征尺寸更薄，但是由于较厚的区域而可形成。 在一些实施例中，束状结构由多个粘附层形成。

公开(公告)号：US07511523B2

公开(公告)日：2009-03-31

申请号：US11695577

申请日：2007-04-02

Applicant: Richard T. Chen ,  Ezekiel J. J. Kruglick ,  Christopher A. Bang ,  Dennis R. Smalley ,  Pavel B. Lembrikov

Inventor： Richard T. Chen ,  Ezekiel J. J. Kruglick ,  Christopher A. Bang ,  Dennis R. Smalley ,  Pavel B. Lembrikov

IPC: G01R31/02

CPC classification number: C25D5/02 ,  G01R1/0483 ,  G01R1/06711 ,  G01R1/06716 ,  G01R1/06727 ,  G01R1/06738 ,  G01R1/06744 ,  G01R1/06755 ,  G01R1/07342 ,  G01R1/07357 ,  G01R3/00 ,  G01R31/2886

Abstract: Embodiments disclosed herein are directed to compliant probe structures for making temporary or permanent contact with electronic circuits and the like. In particular, embodiments are directed to various designs of cantilever-like probe structures. Some embodiments are directed to methods for fabricating such cantilever structures. In some embodiments, for example, cantilever probes have extended base structures, slide in mounting structures, multi-beam configurations, offset bonding locations to allow closer positioning of adjacent probes, compliant elements with tensional configurations, improved over travel, improved compliance, improved scrubbing capability, and/or the like.

公开(公告)号：US20080246558A1

公开(公告)日：2008-10-09

申请号：US11842947

申请日：2007-08-21

Applicant: Elliott R. Brown ,  John D. Evans ,  Christopher A. Bang ,  Adam L. Cohen ,  Michael S. Lockard ,  Dennis R. Smalley ,  Morton Grosser

Inventor： Elliott R. Brown ,  John D. Evans ,  Christopher A. Bang ,  Adam L. Cohen ,  Michael S. Lockard ,  Dennis R. Smalley ,  Morton Grosser

IPC: H01P3/06 ,  B05D5/00

CPC classification number: H01P1/202 ,  B33Y10/00 ,  B33Y70/00 ,  B81B2201/042 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H01P11/007 ,  H05K3/4647 ,  Y10T29/49002 ,  Y10T29/49016 ,  Y10T29/49018

Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).

Abstract translation: 提供RF和微波辐射引导或控制部件，其可以是单片的，其可以由多个电沉积操作和/或从多个沉积的材料层形成，其可以包括开关，电感器，天线，传输线，滤波器 ，和/或其他主动或被动部件。 部件可以包括用于将牺牲材料与结构材料分离的非辐射入口和非辐射出口通道。 优选的形成方法使用电化学制造技术（例如包括选择性沉积，体积沉积，蚀刻操作和平坦化操作）和后沉积工艺（例如选择性蚀刻操作和/或反向填充操作）。

公开(公告)号：US07273812B2

公开(公告)日：2007-09-25

申请号：US11178145

申请日：2005-07-07

Applicant: Kieun Kim ,  Adam L. Cohen ,  Willa M. Larsen ,  Richard T. Chen ,  Ananda H. Kumar ,  Ezekiel J. J. Kruglick ,  Vacit Arat ,  Gang Zhang ,  Michael S. Lockard ,  Christopher A. Bang

Inventor： Kieun Kim ,  Adam L. Cohen ,  Willa M. Larsen ,  Richard T. Chen ,  Ananda H. Kumar ,  Ezekiel J. J. Kruglick ,  Vacit Arat ,  Gang Zhang ,  Michael S. Lockard ,  Christopher A. Bang

IPC: H01L21/44

CPC classification number: C25D1/003 ,  G01R3/00 ,  Y10T29/49222

Abstract: Embodiments of the present invention are directed to the formation of microprobe tips elements having a variety of configurations. In some embodiments tips are formed from the same building material as the probes themselves, while in other embodiments the tips may be formed from a different material and/or may include a coating material. In some embodiments, the tips are formed before the main portions of the probes and the tips are formed in proximity to or in contact with a temporary substrate. Probe tip patterning may occur in a variety of different ways, including, for example, via molding in patterned holes that have been isotropically or anisotropically etched silicon, via molding in voids formed in exposed photoresist, via molding in voids in a sacrificial material that have formed as a result of the sacrificial material mushrooming over carefully sized and located regions of dielectric material, via isotropic etching of the tip material around carefully sized and placed etching shields, via hot pressing, and the like.

Abstract translation: 本发明的实施例涉及形成具有各种构造的微探针尖元件。 在一些实施例中，尖端由与探针本身相同的建筑材料形成，而在其它实施例中，尖端可以由不同的材料形成和/或可以包括涂层材料。 在一些实施例中，尖端在探针的主要部分之前形成，并且尖端形成在临时衬底附近或与临时衬底接触。 探针尖端图案化可以以各种不同的方式发生，包括例如通过在各向异性或各向异性地蚀刻硅的图案化孔中模制，通过在曝光的光致抗蚀剂中形成的空隙中模制，通过在牺牲材料中的空隙中模制， 由于牺牲材料通过电介质材料的细小尺寸和定位的区域，经由热压等等仔细地尺寸和放置的蚀刻屏蔽部分上的尖端材料的各向同性蚀刻而形成。

公开(公告)号：US07265562B2

公开(公告)日：2007-09-04

申请号：US11029219

申请日：2005-01-03

Applicant: Richard T. Chen ,  Ezekiel J. J. Kruglick ,  Christopher A. Bang ,  Dennis R. Smalley ,  Pavel B. Lembrikov

Inventor： Richard T. Chen ,  Ezekiel J. J. Kruglick ,  Christopher A. Bang ,  Dennis R. Smalley ,  Pavel B. Lembrikov

IPC: G01R31/02

CPC classification number: G01R1/06733 ,  G01R1/06744

Abstract: Embodiments disclosed herein are directed to compliant probe structures for making temporary or permanent contact with electronic circuits and the like. In particular, embodiments are directed to various designs of cantilever-like probe structures. Some embodiments are directed to methods for fabricating such cantilever structures. In some embodiments, for example, cantilever probes have extended base structures, slide in mounting structures, multi-beam configurations, offset bonding locations to allow closer positioning of adjacent probes, compliant elements with tensional configurations, improved over travel, improved compliance, improved scrubbing capability, and/or the like.

Abstract translation: 本文公开的实施例涉及用于与电子电路等进行临时或永久接触的柔性探针结构。 具体地，实施例涉及悬臂式探针结构的各种设计。 一些实施例涉及制造这种悬臂结构的方法。 在一些实施例中，例如，悬臂探头具有延伸的基部结构，在安装结构中滑动，多光束配置，偏移粘合位置，以允许相邻探针，具有张力构型的柔顺元件，改善的行程，改善的顺应性，改进的擦洗 能力和/或类似物。

公开(公告)号：US06444487B1

公开(公告)日：2002-09-03

申请号：US09245272

申请日：1999-02-05

Applicant: Bradley J. Boggs ,  Marcus S. Just ,  Kevin C. Stark ,  Christopher A. Bang

Inventor： Bradley J. Boggs ,  Marcus S. Just ,  Kevin C. Stark ,  Christopher A. Bang

IPC: H01L2100

CPC classification number: G01L1/2293 ,  G01L1/18 ,  G01L9/0055

Abstract: A generally flexible strain gage comprising a strain sensing element, and a generally flexible substrate supporting the strain sensing element. The strain sensing element is made of single crystal or polycrystalline semiconducting material. The invention also includes a method for forming a generally flexible strain gage comprising the step of selecting a wafer having a portion of a base material and portion of a single crystal or polycrystalline semiconducting material located thereon. The method further comprises the steps of etching a strain sensing element out of the semiconducting material and forming a generally flexible substrate onto said sensing element.

Abstract translation: 包括应变感测元件的普通柔性应变计和支撑应变感测元件的大体柔性基底。 应变传感元件由单晶或多晶半导体材料制成。 本发明还包括一种用于形成大体柔性应变计的方法，包括选择具有一部分基材的晶片和位于其上的单晶或多晶半导体材料的部分的步骤。 该方法还包括以下步骤：从半导体材料中蚀刻应变感测元件，并将基本上柔性的衬底形成在所述感测元件上。