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    Methods of Forming Three-Dimensional Structures Having Reduced Stress and/or Curvature
    9.
    发明申请
    Methods of Forming Three-Dimensional Structures Having Reduced Stress and/or Curvature 有权
    形成具有减小的应力和/或曲率的三维结构的方法

    公开(公告)号：US20120222960A1

    公开(公告)日：2012-09-06

    申请号：US13409950

    申请日：2012-03-01

    申请人： Ananda H. Kumar ,  Jorge Sotelo Albarran ,  Adam L. Cohen ,  Kieun Kim ,  Michael S. Lockard ,  Uri Frodis ,  Dennis R. Smalley

    发明人： Ananda H. Kumar ,  Jorge Sotelo Albarran ,  Adam L. Cohen ,  Kieun Kim ,  Michael S. Lockard ,  Uri Frodis ,  Dennis R. Smalley

    IPC分类号： C25D5/02

    CPC分类号： B81C1/00666 ,  C25D5/022

    摘要： Electrochemical fabrication processes and apparatus for producing single layer or multi-layer structures where each layer includes the deposition of at least two materials and wherein the formation of at least some layers includes operations for reducing stress and/or curvature distortion when the structure is released from a sacrificial material which surrounded it during formation and possibly when released from a substrate on which it was formed. Six primary groups of embodiments are presented which are divide into eleven primary embodiments. Some embodiments attempt to remove stress to minimize distortion while others attempt to balance stress to minimize distortion.

    摘要翻译： 用于生产单层或多层结构的电化学制造方法和装置，其中每个层包括至少两种材料的沉积，并且其中形成至少一些层包括当结构被释放时减少应力和/或曲率失真的操作 牺牲材料，其在形成期间包围它，并且可能当从其形成的基底释放时。 呈现了六个主要实施例的组，它们分为十一个主要实施例。 一些实施例尝试去除应力以最小化失真，而另一些实施例试图平衡应力以最小化失真。

    Electrochemical Fabrication Methods for Producing Multilayer Structures Including the use of Diamond Machining in the Planarization of Deposits of Material
    10.
    发明申请
    Electrochemical Fabrication Methods for Producing Multilayer Structures Including the use of Diamond Machining in the Planarization of Deposits of Material 审中-公开
    用于生产多层结构的电化学制造方法包括在材料沉积物平面化中使用金刚石加工

    公开(公告)号：US20120114861A1

    公开(公告)日：2012-05-10

    申请号：US13253856

    申请日：2011-10-05

    申请人： Adam L. Cohen ,  Uri Frodis ,  Michael S. Lockard ,  Ananda H. Kumar ,  Gang Zhang ,  Dennis R. Smalley

    发明人： Adam L. Cohen ,  Uri Frodis ,  Michael S. Lockard ,  Ananda H. Kumar ,  Gang Zhang ,  Dennis R. Smalley

    IPC分类号： B05D3/12 ,  B05D1/36 ,  C25D5/48

    CPC分类号： C25D1/003 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D5/02 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885

    摘要： Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which can be diamond machined with minimal tool wear (e.g. Ni—P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn—Pb). Some embodiments provide for reducing tool wear when using difficult-to-machine materials by (1) depositing difficult to machine materials selectively and potentially with little excess plating thickness and/or (2) pre-machining depositions to within a small increment of desired surface level (e.g. using lapping) and then using diamond fly cutting to complete the process, and/or (3) forming structures or portions of structures from thin walled regions of hard-to-machine material as opposed to wide solid regions of structural material.

    摘要翻译： 用于形成单层和多层中尺度和微结构结构的电化学制造方法包括使用金刚石加工（例如飞切或车削）来平坦化层。 一些实施例侧重于牺牲和结构材料的系统，其可以以最小的工具磨损（例如Ni-P和Cu，Au和Cu，Cu和Sn，Au和Cu，Au和Sn以及Au和Sn-Pb）进行金刚石加工， 。 一些实施例提供了通过（1）选择性地沉积难以加工的材料并且潜在地以很少的镀层厚度沉积和/​​或（2）预加工沉积到期望表面的小增量内，以便在使用难加工材料时减少刀具磨损 （例如使用研磨），然后使用金刚石飞切切割来完成该过程，和/或（3）从硬质材料的薄壁区域形成与结构材料的宽固体区域相反的结构或部分结构。