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41.发明申请公开(公告)号：US20060189824A1
公开(公告)日：2006-08-24
申请号：US11360020
申请日：2006-02-22
Applicant: Rajesh Kumar , Suizhou Yang , Vijayendra Kumar , Ashok Cholli
Inventor： Rajesh Kumar , Suizhou Yang , Vijayendra Kumar , Ashok Cholli
IPC: C07C215/34
CPC classification number: C07C213/02 , C07C215/50 , C07C229/38 , C08K5/005 , C10M133/14 , C10M149/22 , C10M159/12 , C10M177/00 , C10M2207/026 , C10M2207/08 , C10M2215/04 , C10M2215/06 , C10M2215/066 , C10N2230/10 , C10N2270/00
Abstract: Disclosed are compounds represented by structural formula (I): methods of producing compounds represented by structural formula (I) and their use in inhibiting oxidation in an oxidizable material.
Abstract translation: 公开了由结构式（I）表示的化合物：由结构式（I）表示的化合物的制备方法及其在可氧化材料中的抑制氧化的用途。
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42.发明授权Method and apparatus for carrying telephony network traffic over an ATM network 失效用于在ATM网络上承载电话网络业务的方法和装置公开(公告)号：US07085279B1
公开(公告)日：2006-08-01
申请号：US09752075
申请日：2000-12-29
Applicant: Rajesh Kumar , Snehal Karia
Inventor： Rajesh Kumar , Snehal Karia
IPC: H04L12/56
CPC classification number: H04L12/5601 , H04L2012/563 , H04L2012/5671 , H04M7/063
Abstract: A method that sends ATM source identification and an ATM-TDM correlation tag from an ATM source gateway to a telephony signaling control network; and then receives at an ATM destination gateway the ATM source identification and the ATM-TDM correlation tag as sent from the telephony signaling control network; and then sends the ATM-TDM correlation tag from the ATM destination gateway to the ATM source gateway to establish a connection between the ATM destination gateway and the ATM source gateway.
Abstract translation: 一种将ATM源标识和ATM-TDM相关标签从ATM源网关发送到电话信令控制网络的方法; 然后在ATM目的地网关处接收从电话信令控制网络发送的ATM源标识和ATM-TDM相关标签; 然后将ATM-TDM相关标签从ATM目的网关发送到ATM源网关，建立ATM目的网关与ATM源网关之间的连接。
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公开(公告)号：US20060099271A1
公开(公告)日：2006-05-11
申请号：US11312371
申请日：2005-12-21
Applicant: Michael Rickey , J. Michael Ramstack , Rajesh Kumar
Inventor： Michael Rickey , J. Michael Ramstack , Rajesh Kumar
CPC classification number: A61K38/09 , A61K9/1641 , A61K9/1647 , A61K9/1682 , A61K9/1694 , A61K9/5089 , A61K31/519 , B01J8/025 , B01J13/08 , B01J13/12 , B01J13/206 , B01J14/00 , B01J19/121 , B01J19/122 , B01J19/2415 , B01J2219/0877
Abstract: Methods for preparing microparticles having reduced residual solvent levels. Microparticles are contacted with a non-aqueous washing system to reduce the level of residual solvent in the microparticles. Preferred non-aqueous washing systems include 100% ethanol and a blend of ethanol and heptane. A solvent blend of a hardening solvent and a washing solvent can be used to harden and wash microparticles in a single step, thereby eliminating the need for a post-hardening wash step.
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公开(公告)号：US20060094857A1
公开(公告)日：2006-05-04
申请号：US11252819
申请日：2005-10-18
Applicant: Rajesh Kumar , Arthur Watterson , Virinder Parmar , Jayant Kumar , Lynne Samuelson
Inventor： Rajesh Kumar , Arthur Watterson , Virinder Parmar , Jayant Kumar , Lynne Samuelson
Abstract: The invention relates to new methods of enzymatic synthesis of polymers such as polyorganosilicones and polyesters, and new polymers made by these methods.
Abstract translation: 本发明涉及聚合物如聚有机硅氧烷和聚酯的酶合成新方法，以及通过这些方法制备的新型聚合物。
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45.发明授权公开(公告)号：US07005678B2
公开(公告)日：2006-02-28
申请号：US10984953
申请日：2004-11-10
Applicant: Rajesh Kumar , Andrei Mihaila , Florin Udrea
Inventor： Rajesh Kumar , Andrei Mihaila , Florin Udrea
IPC: H01L31/0312
CPC classification number: H01L29/66068 , H01L29/1608 , H01L29/8083 , Y10S438/931
Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.
Abstract translation: 碳化硅半导体器件包括：依次层叠的包括基底基板，第一半导体层，第二半导体层和第三半导体层的半导体基板; 设置在所述半导体衬底中并提供电气部件形成部分的单元部分; 以及围绕单元部分的周边部分。 周边部分包括穿透第二和第三半导体层的沟槽到达第一半导体层，并且围绕电池部分，使得第二和第三半导体层基本上被沟槽划分。 外围部分还包括设置在沟槽的内壁上的第四半导体层。
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Patent Agency Ranking
46.发明申请Method and apparatus for interleaving text and media in a real-time transport session 有权用于在实时传输会话中交织文本和媒体的方法和装置公开(公告)号：US20060007916A1
公开(公告)日：2006-01-12
申请号：US10982620
申请日：2004-11-03
Applicant: Paul Jones , Rajesh Kumar , Mehryar Garakani , Herbert Wildfeuer
Inventor： Paul Jones , Rajesh Kumar , Mehryar Garakani , Herbert Wildfeuer
CPC classification number: H04L47/10 , H04L12/66 , H04L29/06027 , H04L47/11 , H04L47/2416 , H04L47/263 , H04L47/34 , H04L65/1069 , H04L65/1083
Abstract: Text is interleaved and transported along with media data over the same real-time Internet Protocol (IP) media transport session. A network processing device identifies text characters corresponding with text signaling. The identified text characters are formatted into text packets and sent over the same real-time IP media transport session used for real-time media transport. The media transport session can identify the sequence that the text characters are transmitted and can specify a maximum character transfer rate.
Abstract translation: 文本与媒体数据在相同的实时互联网协议（IP）媒体传输会话上进行交织和传输。 网络处理设备识别与文本信令相对应的文本字符。 所识别的文本字符被格式化成文本分组，并通过用于实时媒体传输的相同的实时IP媒体传输会话发送。 媒体传输会话可以识别发送文本字符的顺序，并且可以指定最大字符传输速率。
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47.发明申请公开(公告)号：US20050258454A1
公开(公告)日：2005-11-24
申请号：US11135661
申请日：2005-05-24
Applicant: Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ohyanagi , Atsuo Watanabe
Inventor： Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ohyanagi , Atsuo Watanabe
IPC: H01L21/04 , H01L21/336 , H01L27/098 , H01L27/10 , H01L29/06 , H01L29/24 , H01L29/78 , H01L29/808
CPC classification number: H01L29/1608 , H01L27/098 , H01L29/0619 , H01L29/66068 , H01L29/8083
Abstract: A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.
Abstract translation: 碳化硅半导体器件的制造方法包括以下步骤：制备包括碳化硅衬底，漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。
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公开(公告)号：US06962963B2
公开(公告)日：2005-11-08
申请号：US10688582
申请日：2003-10-17
Applicant: Rajesh Kumar , Arthur C. Watterson , Virinder Singh Parmar , Jayant Kumar , Lynne Ann Samuelson
Inventor： Rajesh Kumar , Arthur C. Watterson , Virinder Singh Parmar , Jayant Kumar , Lynne Ann Samuelson
IPC: C12P7/62 , C12P9/00 , C08G77/08 , C08G77/26 , C08G77/445
Abstract: The invention relates to new methods of enzymatic synthesis of polymers such as polyorganosilicones and polyesters, and new polymers made by these methods.
Abstract translation: 本发明涉及聚合物如聚有机硅氧烷和聚酯的酶合成新方法，以及通过这些方法制备的新型聚合物。
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49.发明申请公开(公告)号：US20050151158A1
公开(公告)日：2005-07-14
申请号：US10984953
申请日：2004-11-10
Applicant: Rajesh Kumar , Andrei Mihaila , Florin Udrea
Inventor： Rajesh Kumar , Andrei Mihaila , Florin Udrea
IPC: H01L29/06 , H01L21/04 , H01L21/337 , H01L21/8232 , H01L27/06 , H01L29/24 , H01L29/808 , H01L29/15 , H01L21/332
CPC classification number: H01L29/66068 , H01L29/1608 , H01L29/8083 , Y10S438/931
Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.
Abstract translation: 碳化硅半导体器件包括：依次层叠的包括基底基板，第一半导体层，第二半导体层和第三半导体层的半导体基板; 设置在所述半导体衬底中并提供电气部件形成部分的单元部分; 以及围绕单元部分的周边部分。 周边部分包括穿透第二和第三半导体层的沟槽到达第一半导体层，并且围绕电池部分，使得第二和第三半导体层基本上被沟槽划分。 外围部分还包括设置在沟槽的内壁上的第四半导体层。
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50.发明申请公开(公告)号：US20050079224A1
公开(公告)日：2005-04-14
申请号：US10956092
申请日：2004-10-04
Applicant: Michael Rickey , J. Ramstack , Rajesh Kumar
Inventor： Michael Rickey , J. Ramstack , Rajesh Kumar
IPC: B65D5/462 , A61K9/16 , A61K31/519 , A61K38/00 , A61K38/04 , A61K47/32 , A61K47/34 , B01J8/02 , B01J13/08 , B01J13/12 , B01J13/20 , B01J14/00 , B01J19/12 , B01J19/24 , B65D5/46 , B65D5/465 , B65D71/00 , B65D71/36 , A61K38/09 , A61K9/50 , B01J13/02 , B01J13/04
CPC classification number: A61K38/09 , A61K9/1641 , A61K9/1647 , A61K9/1682 , A61K9/1694 , A61K9/5089 , A61K31/519 , B01J8/025 , B01J13/08 , B01J13/12 , B01J13/206 , B01J14/00 , B01J19/121 , B01J19/122 , B01J19/2415 , B01J2219/0877
Abstract: Methods for preparing microparticles having reduced residual solvent levels. Microparticles are contacted with a non-aqueous washing system to reduce the level of residual solvent in the microparticles. Preferred non-aqueous washing systems include 100% ethanol and a blend of ethanol and heptane. A solvent blend of a hardening solvent and a washing solvent can be used to harden and wash microparticles in a single step, thereby eliminating the need for a post-hardening wash step.
Abstract translation: 制备具有降低的残留溶剂水平的微粒的方法。 微粒与非水洗涤体系接触以降低微粒中残留溶剂的含量。 优选的非水洗涤系统包括100％乙醇和乙醇与庚烷的混合物。 可以使用硬化溶剂和洗涤溶剂的溶剂共混物在一个步骤中硬化和洗涤微粒，从而不需要后硬化洗涤步骤。
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