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41.发明授权Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 失效在半导体工件上电化学沉积金属的装置和方法公开(公告)号：US07332066B2
公开(公告)日：2008-02-19
申请号：US11053050
申请日：2005-02-07
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。
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42.发明授权公开(公告)号：US07189318B2
公开(公告)日：2007-03-13
申请号：US09866391
申请日：2001-05-24
CPC分类号： C25D21/12 , C25D17/001 , C25F3/30
摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.
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公开(公告)号：US09222195B2
公开(公告)日：2015-12-29
申请号：US13603836
申请日：2012-09-05
申请人： Paul R. McHugh , Gregory J. Wilson
发明人： Paul R. McHugh , Gregory J. Wilson
CPC分类号： C25D21/12 , C25D7/123 , C25D17/001 , C25D17/008
摘要： In an electroplating process, electric current is applied to two or more electrodes, with the current varying over time according to a multi-variable function. The multi-variable current function is integrated over time, for each electrode, to determine a net plating charge delivered. A plating profile of a plated-on layer of material is compared to a target plating profile. Deviations between the actual plating profile and the target plating profile are identified and used to determine new net plating charges for each electrode. One or more variables of the multi-variable function is changed to provide a new multi-variable function. The new net plating charges are distributed according to the new multi-variable current function, and are used to electroplate a layer of material on a second substrate.
摘要翻译： 在电镀工艺中，电流被施加到两个或更多个电极，电流根据多变量功能随时间而变化。 随着时间的推移，多变量电流功能对于每个电极进行积分，以确定传送的净电镀电量。 将电镀层材料的电镀轮廓与目标电镀轮廓进行比较。 识别实际电镀曲线和目标电镀曲线之间的偏差，并用于确定每个电极的新净镀层电荷。 多变量函数的一个或多个变量被改变以提供新的多变量函数。 新的净电镀费用根据新的多变量电流功能分配，并用于在第二基板上电镀一层材料。
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公开(公告)号：US08968531B2
公开(公告)日：2015-03-03
申请号：US13313865
申请日：2011-12-07
申请人： Gregory J. Wilson , Paul R. McHugh
发明人： Gregory J. Wilson , Paul R. McHugh
IPC分类号： C25D17/00
CPC分类号： C25D17/001 , C25D17/008
摘要： In an electro processor for plating semiconductor wafers and similar substrates, a contact ring has a plurality of spaced apart contact fingers. A shield at least partially overlies the contact fingers. The shield changes the electric field around the outer edge of the workpiece and the contact fingers, which reduces or eliminates the negative aspects of using high thief electrode currents and seed layer deplating. The shield may be provided in the form of an annular ring substantially completely overlying and covering, and optionally touching the contact fingers.
摘要翻译： 在用于电镀半导体晶片和类似基板的电子处理器中，接触环具有多个间隔开的接触指状物。 护罩至少部分地覆盖在接触指状物上。 屏蔽层改变了工件外边缘周围的电场和接触指，这减少或消除了使用高电极电流和种子层脱落的负面方面。 屏蔽件可以以环形的形式提供，基本上完全覆盖并覆盖并且可选地接触接触指。
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公开(公告)号：US08900425B2
公开(公告)日：2014-12-02
申请号：US13306666
申请日：2011-11-29
CPC分类号： C25D17/007 , C25D17/001 , C25D17/005 , C25D17/008
摘要： An electro-processing apparatus includes a rotor in a head, and a contact ring assembly on the rotor. The contact ring assembly may have one or more strips of contact fingers on a ring base, with contact fingers clamped into position on the ring base. The strips may have spaced apart projection openings, with the projections on the ring base extending into or through the projection openings. A shield ring may be attached to the ring base, to clamp the contact fingers in place, and/or to provide an electric field shield over at least part of the contact fingers. The contact fingers may be provided as a plurality of adjoining forks, with substantially each fork including at least two contact fingers.
摘要翻译： 电加工设备包括头部中的转子和转子上的接触环组件。 接触环组件可以在环形基座上具有一个或多个接触指状带，其中接触指夹紧在环形基座上的适当位置。 条带可以具有间隔开的突出开口，环形基座上的突起延伸到突出开口中或通过突出开口。 屏蔽环可以附接到环形基座，以将接触指针夹紧就位，和/或在至少部分接触指状物上提供电场屏蔽。 接触指可以设置成多个相邻的叉，基本上每个叉包括至少两个接触指。
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公开(公告)号：US08496790B2
公开(公告)日：2013-07-30
申请号：US13288495
申请日：2011-11-03
申请人： Gregory J. Wilson , Paul R. McHugh
发明人： Gregory J. Wilson , Paul R. McHugh
CPC分类号： H01L21/02002 , C25D5/028 , C25D5/08 , C25D7/123 , C25D17/002 , C25D17/005 , C25D17/007 , C25D17/02
摘要： An electrochemical processor may include a head having a rotor configured to hold a workpiece, with the head moveable to position the rotor in a vessel. Inner and outer anodes are in inner and outer anolyte chambers within the vessel. An upper cup in the vessel, has a curved upper surface and inner and outer catholyte chambers. A current thief is located adjacent to the curved upper surface. Annular slots in the curved upper curved surface connect into passageways, such as tubes, leading into the outer catholyte chamber. Membranes may separate the inner and outer anolyte chambers from the inner and outer catholyte chambers, respectively.
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公开(公告)号：US20120292179A1
公开(公告)日：2012-11-22
申请号：US13288495
申请日：2011-11-03
申请人： Gregory J. Wilson , Paul R. McHugh
发明人： Gregory J. Wilson , Paul R. McHugh
IPC分类号： C25D17/06
CPC分类号： H01L21/02002 , C25D5/028 , C25D5/08 , C25D7/123 , C25D17/002 , C25D17/005 , C25D17/007 , C25D17/02
摘要： An electrochemical processor may include a head having a rotor configured to hold a workpiece, with the head moveable to position the rotor in a vessel. Inner and outer anodes are in inner and outer anolyte chambers within the vessel. An upper cup in the vessel, has a curved upper surface and inner and outer catholyte chambers. A current thief is located adjacent to the curved upper surface. Annular slots in the curved upper curved surface connect into passageways, such as tubes, leading into the outer catholyte chamber. Membranes may separate the inner and outer anolyte chambers from the inner and outer catholyte chambers, respectively.
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公开(公告)号：US20120199475A1
公开(公告)日：2012-08-09
申请号：US13023317
申请日：2011-02-08
申请人： Paul R. McHugh , Gregory J. Wilson , Bryan Puch
发明人： Paul R. McHugh , Gregory J. Wilson , Bryan Puch
CPC分类号： C25D17/001
摘要： A substrate or semiconductor wafer processing apparatus has an agitator plate adjacent to an upper end of a process vessel. A workpiece holder holds a workpiece in the vessel at a processing position above the agitator plate. A vertical actuator assembly supporting the agitator plate oscillates the agitator plate vertically. The agitator plate may also rotate while oscillating vertically. In one design, the agitator plate has a spiral vane and a spiral slot. In a related metal plating apparatus, electrodes and a dielectric field shaping unit are in the vessel, below the agitator plate, and a shield ring is adjacent to the upper end of the vessel, above the agitator plate.
摘要翻译： 基板或半导体晶片处理装置具有与处理容器的上端相邻的搅拌板。 工件夹持器在搅拌器板上方的处理位置处将容器保持在容器中。 支撑搅拌板的垂直致动器组件垂直振荡搅拌器板。 搅拌器板也可以在垂直摆动的同时旋转。 在一种设计中，搅拌器板具有螺旋叶片和螺旋槽。 在相关的金属电镀装置中，电极和电介质场成形单元位于搅拌器板下面的容器中，并且在搅拌器板上方的屏蔽环与容器的上端相邻。
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49.发明授权公开(公告)号：US07020537B2
公开(公告)日：2006-03-28
申请号：US09849505
申请日：2001-05-04
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , C25D7/123 , C25D17/001 , C25D21/12 , G05B2219/32182 , G05B2219/32216 , G05B2219/45031 , Y02P90/22 , Y02P90/265
摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.
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50.发明授权Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature 有权用于处理微电子工件的方法和装置，包括用于在升高的温度下执行处理步骤的装置和方法公开(公告)号：US06471913B1
公开(公告)日：2002-10-29
申请号：US09501002
申请日：2000-02-09
IPC分类号： C21D106
CPC分类号： H01L21/67103
摘要： An apparatus for thermally processing a microelectronic workpiece is set forth. The apparatus comprises a first assembly and a second assembly, disposed opposite one another, with an actuator disposed to provide relative movement between the first assembly and second assembly. More particularly, the actuator provides relative movement between at least a loading position in which the first assembly is in a state for loading or unloading of the microelectronic workpiece, and a thermal processing position in which the first assembly and second assembly are proximate one another and form a thermal processing chamber. A thermal transfer unit is disposed in the second assembly and has a workpiece support surface that is heated and cooled in a controlled manner. As the first assembly and second assembly are driven to the thermal processing position by the actuator, an arrangement of elements bring a surface of the microelectronic workpiece into direct physical contact with the workpiece support surface of the thermal transfer unit. In a preferred embodiment, the thermal transfer unit is comprised of a low thermal mass heater and a high thermal mass cooler disposed to controllably cool the low thermal mass heater.
摘要翻译： 阐述了一种用于热处理微电子工件的装置。 该装置包括第一组件和第二组件，第一组件和第二组件彼此相对设置，致动器设置成在第一组件和第二组件之间提供相对运动。 更具体地，致动器在至少其中第一组件处于用于加载或卸载微电子工件的状态的加载位置和第一组件和第二组件彼此靠近的热处理位置之间提供相对运动，以及 形成热处理室。 热转印单元设置在第二组件中，并具有以受控方式加热和冷却的工件支撑表面。 当第一组件和第二组件被致动器驱动到热处理位置时，元件的布置使微电子工件的表面与热转印单元的工件支撑表面直接物理接触。 在优选实施例中，热传递单元包括低热量加热器和设置成可控冷却低热量加热器的高热质量冷却器。
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