公开(公告)号：US20050179135A1

公开(公告)日：2005-08-18

申请号：US11105250

申请日：2005-04-13

Applicant: Devendra Kumar

Inventor： Devendra Kumar

IPC: H01L23/522 ,  H01L21/768 ,  H01L29/02 ,  H01L23/48

CPC classification number: H01L21/76835 ,  H01L21/76807 ,  H01L21/7682

Abstract: A semiconductor device having a hollow structure includes: a substrate on which a wiring layer is formed; a low-dielectric layer with a porosity of 6% to 25% having vias and trenches and having voids between adjacent vias; and a contact layer of copper with which the vias and trenches are filled. The contact layer is in contact with the wiring layer and an upper surface of the contact layer is exposed from the dielectric layer.

Abstract translation: 具有中空结构的半导体器件包括：其上形成有布线层的基板; 具有孔隙率为6％至25％的低电介质层，具有通孔和沟槽，并且在相邻过孔之间具有空隙; 以及填充有通孔和沟槽的铜的接触层。 接触层与布线层接触，接触层的上表面从电介质层露出。

公开(公告)号：US4579782A

公开(公告)日：1986-04-01

申请号：US771538

申请日：1985-08-30

Applicant: Devendra Kumar ,  George M. Fohlen ,  John A. Parker

Inventor： Devendra Kumar ,  George M. Fohlen ,  John A. Parker

IPC: B32B5/28 ,  C08G73/10 ,  C08G73/12 ,  C08J5/24 ,  B32B27/08 ,  B32B27/34

CPC classification number: C08J5/24 ,  B32B5/28 ,  C08G73/1092 ,  C08G73/121 ,  C08J2379/08 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31765

Abstract: Novel amine terminated bisaspartimides, especially 4,4'-bis{N.sup.2 -[4-(4-aminophenoxy)phenyl]aspartimido}diphenylmethane are prepared by a Michael-type reaction of an aromatic bismaleimide and an aromatic diamine in an aprotic solvent. These bisaspartimides are thermally polymerized to yield tough, resinous polymers cross-linked through --NH-- groups. Such polymers are useful in applications requiring materials with resistance to change at elevated temperatures, e.g., as lightweight laminates with graphite cloth, molding material prepregs, adhesives and insulating material.

Abstract translation: 通过芳族双马来酰亚胺和芳族二胺在非质子溶剂中的迈克尔型反应制备新的胺封端的双甲酰亚胺，特别是4,4'-双（N 2 - [4-（4-氨基苯氧基）苯基]天冬氨酰亚氨基}二苯基甲烷。 这些双天冬酰亚胺被热聚合以产生通过-NH-基团交联的韧性树脂状聚合物。 这种聚合物可用于需要在高温下具有耐变化性的材料的应用，例如作为具有石墨布的轻质层压材料，模塑材料预浸料，粘合剂和绝缘材料。

公开(公告)号：US07498242B2

公开(公告)日：2009-03-03

申请号：US11359884

申请日：2006-02-21

Applicant: Devendra Kumar ,  Kamal Kishore Goundar ,  Nathanael R. C. Kemeling ,  Hideaki Fukuda ,  Hessel Sprey ,  Maarten Stokhof

Inventor： Devendra Kumar ,  Kamal Kishore Goundar ,  Nathanael R. C. Kemeling ,  Hideaki Fukuda ,  Hessel Sprey ,  Maarten Stokhof

IPC: H01L21/322

CPC classification number: H01L21/02063 ,  C23C14/02 ,  C23C16/02 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating layers. The layers are then adequately treated with a particular plasma process. Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction can occur without significantly filling the pores forming improved interconnects.

Abstract translation: 提供了集成电路中双镶嵌结构的保形衬里的方法和结构。 优选实施例涉及在多孔材料中形成的开口上提供适形衬里。 沟槽形成在，优选绝缘层中。 然后用特定的等离子体工艺充分处理各层。 在这种等离子体处理之后，可以发生自限制的自饱和原子层沉积（ALD）反应，而不显着填充形成改进的互连的孔。

公开(公告)号：US4600769A

公开(公告)日：1986-07-15

申请号：US739760

申请日：1985-05-31

Applicant: Devendra Kumar ,  George M. Fohlen ,  John A. Parker

Inventor： Devendra Kumar ,  George M. Fohlen ,  John A. Parker

IPC: B32B5/28 ,  C08G73/06 ,  C08G73/10 ,  C08G73/12 ,  C08J5/24

CPC classification number: C08J5/24 ,  B32B5/28 ,  C08G73/0611 ,  C08G73/1092 ,  C08G73/121 ,  C08J2379/08 ,  Y10T428/31721

Abstract: Novel amine terminated bisaspartimides, especially 4,4'-bis{N.sup.2 -[4-(4-aminophenoxy)phenyl]aspartimido} diphenylmethane are prepared by a Michael-type reaction of an aromatic bismaleimide and an aromatic diamine in an aprotic solvent. These bisaspartimides are thermally polymerized to yield tough, resinous polymers cross-linked through --NH-- groups. Such polymers are useful in applications requiring materials with resistance to change at elevated temperatures, e.g., as lightweight laminates with graphite cloth, molding material prepregs, adhesives and insulating material.

Abstract translation: 通过芳族双马来酰亚胺和芳族二胺在非质子溶剂中的迈克尔型反应制备新的胺封端的双甲酰亚胺，特别是4,4'-双（N 2 - [4-（4-氨基苯氧基）苯基]天冬氨酰亚氨基}二苯基甲烷。 这些双天冬酰亚胺被热聚合以产生通过-NH-基团交联的韧性树脂状聚合物。 这种聚合物可用于需要在高温下具有耐变化性的材料的应用，例如作为具有石墨布的轻质层压材料，模塑材料预浸料，粘合剂和绝缘材料。

公开(公告)号：US20060216932A1

公开(公告)日：2006-09-28

申请号：US11359884

申请日：2006-02-21

Applicant: Devendra Kumar ,  Kamal Goundar ,  Nathanael Kemeling ,  Hideaki Fukuda ,  Hessel Sprey ,  Maarten Stokhof

Inventor： Devendra Kumar ,  Kamal Goundar ,  Nathanael Kemeling ,  Hideaki Fukuda ,  Hessel Sprey ,  Maarten Stokhof

IPC: H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/02063 ,  C23C14/02 ,  C23C16/02 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating layers. The layers are then adequately treated with a particular plasma process. Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction can occur without significantly filling the pores forming improved interconnects.

公开(公告)号：US06949456B2

公开(公告)日：2005-09-27

申请号：US10693200

申请日：2003-10-24

Applicant: Devendra Kumar

Inventor： Devendra Kumar

IPC: H01L23/522 ,  H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76835 ,  H01L21/76807 ,  H01L21/7682

Abstract: A method for manufacturing a semiconductor device includes: (i) depositing a sacrificial layer made of an organic polymer such as benzocyclobutene on a substrate having a circuit formed thereon; (ii) etching the sacrificial layer except for a portion where air gaps are to be formed; (iii) depositing a low-dielectric layer over the substrate until the portion for air gaps is entirely enclosed in the low-dielectric layer; (iv) etching the low-dielectric layer to form via holes and trenches there through; (v) prior or subsequent to step (iv), removing the portion for air gaps; and (vi) depositing copper in the vias and trenches which are filled with the copper contacting a surface of the substrate.

Abstract translation: 半导体器件的制造方法包括：（i）在其上形成有电路的基板上沉积由诸如苯并环丁烯的有机聚合物制成的牺牲层; （ii）蚀刻除了要形成气隙的部分之外的牺牲层; （iii）在所述衬底上沉积低介电层，直到所述空隙部分完全封闭在所述低电介质层中; （iv）蚀刻低电介质层以在其上形成通孔和沟槽; （v）在步骤（iv）之前或之后，除去气隙部分; 和（vi）在通孔和沟槽中沉积铜，所述通孔和沟槽填充有与基底表面接触的铜。

公开(公告)号：US5135604A

公开(公告)日：1992-08-04

申请号：US621784

申请日：1990-12-04

Applicant: Devendra Kumar ,  Sean P. McGlynn

Inventor： Devendra Kumar ,  Sean P. McGlynn

IPC: G01N27/62

CPC classification number: G01N27/628

Abstract: Separation of laser optogalvanic signals in plasma into two components: (1) an ionization rate change component, and (2) a photoacoustic mediated component. This separation of components may be performed even when the two components overlap in time, by measuring time-resolved laser optogalvanic signals in an rf discharge plasma as the rf frequency is varied near the electrical resonance peak of the plasma and associated driving/detecting circuits. A novel spectrometer may be constructed to make these measurements. Such a spectrometer would be useful in better understanding and controlling such processes as plasma etching and plasma deposition.

Abstract translation: 将等离子体中的激光光电信号分离成两部分：（1）电离速率变化分量，和（2）光声介质成分。 即使当两个部件在时间上重叠时，也可以通过在rf放电等离子体中测量时间分辨的激光光电信号，随着rf频率在等离子体和相关联的驱动/检测电路的电共振峰附近变化而进行。 可以构造新的光谱仪来进行这些测量。 这种光谱仪将有助于更好地理解和控制诸如等离子体蚀刻和等离子体沉积之类的工艺。

公开(公告)号：US4668589A

公开(公告)日：1987-05-26

申请号：US806572

申请日：1985-11-21

Applicant: Devendra Kumar ,  George M. Fohlen ,  John A. Parker

Inventor： Devendra Kumar ,  George M. Fohlen ,  John A. Parker

IPC: C07F9/6593 ,  C08G59/50 ,  C08G79/02

CPC classification number: C07F9/65815 ,  C08G59/5046 ,  Y10T428/31511 ,  Y10T428/31525

Abstract: Aminophenoxycyclotriphosphazenes such as hexakis(4-aminophenoxy)cyclotriphosphazene and tris(4-aminophenoxy)-tris phenoxyclyclotriphosphazene are used as curing agents for epoxy resins. These 1,2-epoxy resins are selected from di- or polyepoxide-containing organic moieties of the formula (CH.sub.2 --CHO--CH.sub.2).sub.m --W--R--W--(CH.sub.2 CH--CH.sub.2 O).sub.m where R is diphenyldimethylmethane, diphenylmethane, bis(dibromophenyl)dimethylmethane, or ##STR1## W is a nitrogen or oxygen atom; and m is 1 when W is oxygen and 2 when W is nitrogen. The resins are cured thermally in stages at between about 110.degree. to 135.degree. C. for between about 1 and 10 min, then at between about 175.degree. to 185.degree. C. for between about 0.5 to 10 hr and post-cured at between about 215.degree. and 235.degree. C. for between abut 0.1 and 2 hr. These resins are useful for making fire-resistant elevated temperature stable composites, laminates (e.g. graphite fiber or fiberglass), molded parts, and adhesives and structures, usually for aircraft secondary structures and for spacecraft construction.

Abstract translation: 使用氨基苯氧基环三磷腈如六（4-氨基苯氧基）环三磷腈和三（4-氨基苯氧基） - 三苯氧基氯三磷腈为环氧树脂的固化剂。 这些1,2-环氧树脂选自式（CH2-CHO-CH2）mWRW-（CH2CH-CH2O）m的二元或多环氧化物的有机部分，其中R是二苯基二甲基甲烷，二苯基甲烷，双（二溴苯基）二甲基甲烷或 W是氮或氧原子; 当W为氧时，m为1，W为氮时m为2。 树脂在约110至135℃之间分段固化约1至10分钟，然后在约175至185℃之间约0.5至10小时并在约 215℃和235℃之间约0.1和2小时。 这些树脂可用于制备耐火高温稳定复合材料，层压材料（例如石墨纤维或玻璃纤维），模制零件，以及通常用于飞机二级结构和航天器结构的粘合剂和结构。

公开(公告)号：US06881683B2

公开(公告)日：2005-04-19

申请号：US10317239

申请日：2002-12-11

Applicant: Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato ,  Shinya Kaneko ,  Devendra Kumar ,  Seijiro Umemoto

Inventor： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato ,  Shinya Kaneko ,  Devendra Kumar ,  Seijiro Umemoto

IPC: B05D7/24 ,  C09D4/00 ,  C23C16/30 ,  C23C16/40 ,  H01L21/312 ,  H01L23/29 ,  H01L21/469

CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Abstract translation: 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置。 含硅烃化合物包括作为基础结构的环硅氧烷化合物或线性硅氧烷化合物，其具有使用基础结构的形成低聚物的反应性基团。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

公开(公告)号：US06838115B2

公开(公告)日：2005-01-04

申请号：US09903114

申请日：2001-07-11

Applicant: Devendra Kumar ,  Jeffrey D. Womack ,  Vuong P. Nguyen ,  Jack S. Kasahara ,  Sokol Ibrani

Inventor： Devendra Kumar ,  Jeffrey D. Womack ,  Vuong P. Nguyen ,  Jack S. Kasahara ,  Sokol Ibrani

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/312 ,  H01L21/316 ,  B05D5/12 ,  B05D3/02

CPC classification number: H01L21/02282 ,  H01L21/02 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/02337 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/67109

Abstract: Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.

Abstract translation: 用于制造具有低k特性和低折射率的膜的单晶片处理方法和系统。 该方法包括处理站，其中固化和后固化，原位气体冷却发生。