公开(公告)号：US20110095835A1

公开(公告)日：2011-04-28

申请号：US12927949

申请日：2010-11-30

Applicant: Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

Inventor： Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

IPC: H03B5/32 ,  H03B5/30

CPC classification number: H03H9/1057 ,  H03H9/2426

Abstract: A hybrid system having a non-MEMS device and a MEMS device is described. The apparatus includes a non-MEMS device and an integrated circuit including a MEMS device, the integrated circuit formed on a substrate. The integrated circuit includes a control circuit for the non-MEMS device and a MEMS control circuit for the MEMS device.

Abstract translation: 描述了具有非MEMS器件和MEMS器件的混合系统。 该装置包括非MEMS器件和包括MEMS器件的集成电路，该集成电路形成在衬底上。 集成电路包括用于非MEMS器件的控制电路和用于MEMS器件的MEMS控制电路。

公开(公告)号：US07736929B1

公开(公告)日：2010-06-15

申请号：US11716422

申请日：2007-03-09

Applicant: Pezhman Monadgemi ,  Emmanuel P. Quevy ,  Roger T. Howe

Inventor： Pezhman Monadgemi ,  Emmanuel P. Quevy ,  Roger T. Howe

IPC: H01L21/00 ,  H01L21/461 ,  H01L21/50 ,  C23F1/00 ,  C25F3/00

CPC classification number: B81B7/0038 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: Low temperature, multi-layered microshells for encapsulation of devices such as MEMS and microelectronics. The microshells may include a perforated pre-sealing layer, below which a sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. The pre-sealing layer includes a large surface area getter layer to remove contaminants from the space ultimately enclosed by the microshell to improve the pressure control and cleanliness of the microshell.

Abstract translation: 用于封装MEMS和微电子等器件的低温多层微型壳体。 微壳可以包括穿孔的预密封层，在其下方存取牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 预密封层包括大的表面积吸气剂层，以从最终由微壳包围的空间去除污染物，以改善微壳的压力控制和清洁度。

公开(公告)号：US20130002364A1

公开(公告)日：2013-01-03

申请号：US13173815

申请日：2011-06-30

Applicant: Emmanuel P. Quevy ,  Manu Seth ,  Mehrnaz Motiee

Inventor： Emmanuel P. Quevy ,  Manu Seth ,  Mehrnaz Motiee

IPC: H03B5/30

CPC classification number: H03B5/06 ,  H03B5/323 ,  H03B2200/0082 ,  H03H9/02259 ,  H03H9/2457 ,  H03H2009/02496 ,  H03H2009/02511

Abstract: A MEMS oscillator includes a resonator body and primary and secondary drive electrodes to electrostatically drive the resonator body. Primary and secondary sense electrodes sense motion of the resonator body. The primary and secondary drive and sense electrodes are configured to be used together during start-up of the MEMS oscillator. The secondary drive electrode and secondary sense electrode are disabled after start-up, while the primary drive and sense electrodes remain enabled to maintain oscillation.

Abstract translation: MEMS振荡器包括谐振器体和用于静电驱动谐振器体的初级和次级驱动电极。 初级和次级感测电极感测谐振器体的运动。 主驱动和感测电极被配置为在MEMS振荡器启动期间一起使用。 辅助驱动电极和次级感测电极在启动后被禁用，而主驱动电极和感测电极保持启用以保持振荡。

公开(公告)号：US08273594B2

公开(公告)日：2012-09-25

申请号：US13017767

申请日：2011-01-31

Applicant: Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

Inventor： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

IPC: H01L21/00

CPC classification number: B81C1/00293 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0721 ,  B81C2203/0735 ,  B81C2203/0771

Abstract: Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

公开(公告)号：US20120043999A1

公开(公告)日：2012-02-23

申请号：US13285608

申请日：2011-10-31

Applicant: Emmanuel P. Quevy ,  Susumu Hara ,  Jeffrey L. Sonntag

Inventor： Emmanuel P. Quevy ,  Susumu Hara ,  Jeffrey L. Sonntag

IPC: H03L7/06

CPC classification number: H03L7/18 ,  H03L1/022

Abstract: A voltage controlled crystal oscillator (VCXO) is locked to a MEMS oscillator with a variable frequency ratio that is a function of a sensed temperature. That allows the long-term stability of the MEMS oscillator and temperature compensation to be reflected in a VCXO output signal having good short-term stability.

Abstract translation: 压控晶体振荡器（VCXO）被锁定到具有可变频率比的MEMS振荡器，该频率比是感测温度的函数。 这允许MEMS振荡器的长期稳定性和温度补偿反映在具有良好短期稳定性的VCXO输出信号中。

公开(公告)号：US20120007693A1

公开(公告)日：2012-01-12

申请号：US13242602

申请日：2011-09-23

Applicant: Emmanuel P. Quevy

Inventor： Emmanuel P. Quevy

IPC: H03H9/00

CPC classification number: H03H9/2426 ,  H03B21/01 ,  H03H9/02377 ,  H03H9/2436 ,  H03H2009/2442

Abstract: A dual in-situ mixing approach for extended tuning range of resonators is described. In one embodiment, a dual in-situ mixing device tunes an input radio-frequency (RF) signal using a first mixer, a resonator body, and a second mixer. In one embodiment, the first mixer is coupled to receive the input RF signal and a local oscillator signal. The resonator body receives the output of the first mixer, and the second mixer is coupled to receive the output of the resonator body and the local oscillator signal to provide a tuned output RF signal as a function of the frequency of local oscillator signal.

Abstract translation: 描述了用于扩展谐振器的调谐范围的双位置混合方法。 在一个实施例中，双原位混合装置使用第一混频器，谐振器本体和第二混频器来调谐输入射频（RF）信号。 在一个实施例中，第一混频器被耦合以接收输入RF信号和本地振荡器信号。 谐振器主体接收第一混频器的输出，并且第二混频器被耦合以接收谐振器主体的输出和本地振荡器信号，以提供作为本地振荡器信号的频率的函数的调谐输出RF信号。

公开(公告)号：US20110121416A1

公开(公告)日：2011-05-26

申请号：US13017892

申请日：2011-01-31

Applicant: Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

Inventor： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

IPC: H01L29/84 ,  H01L21/04

CPC classification number: B81C1/00293 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0721 ,  B81C2203/0735 ,  B81C2203/0771

Abstract: Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

Abstract translation: 用于MEMS和微电子等器件封装的低温多层平面微型壳体。 微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。 密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。 在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

公开(公告)号：US20110121415A1

公开(公告)日：2011-05-26

申请号：US13017767

申请日：2011-01-31

Applicant: Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

Inventor： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

IPC: H01L29/84 ,  H01L21/04

CPC classification number: B81C1/00293 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0721 ,  B81C2203/0735 ,  B81C2203/0771

Abstract: Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

公开(公告)号：US20110074517A1

公开(公告)日：2011-03-31

申请号：US12927960

申请日：2010-11-30

Applicant: Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

Inventor： Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

IPC: H03B5/30

CPC classification number: H03H9/1057 ,  H03H9/2426

Abstract: A hybrid system having a non-MEMS device and a MEMS device is described. The apparatus includes a non-MEMS device and an integrated circuit including a MEMS device, the integrated circuit formed on a substrate. The integrated circuit includes a control circuit for the non-MEMS device and a MEMS control circuit for the MEMS device.

公开(公告)号：US20110068422A1

公开(公告)日：2011-03-24

申请号：US12927312

申请日：2010-11-10

Applicant: Emmanuel P. Quevy ,  Roger T. Howe

Inventor： Emmanuel P. Quevy ,  Roger T. Howe

IPC: H01L29/66

CPC classification number: B81C1/00039 ,  B81B2201/0271

Abstract: A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.

Abstract translation: 描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。 在一个实施例中，MEMS结构包括构件和衬底。 耦合器延伸穿过构件的一部分并将构件与衬底连接。 该构件由第一材料构成，并且该耦合器由第二材料构成。 在一个实施例中，第一和第二材料基本相同。 在一个实施例中，第二材料是导电的并且不同于第一材料。 在另一个实施例中，一种用于制造MEMS结构的方法包括首先在衬底上形成构件。 然后形成由导电材料构成的耦合器，以将该构件与衬底连接。