摘要:
A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer, and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.
摘要:
A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.
摘要:
A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
摘要:
In a magnetoresistive effect element, at least one of electrodes for supplying a current perpendicularly to the film plane of a magnetoresistive effect film is narrower than the distance between bias-applying films. The sensitivity of the magnetoresistive effect film is lower in regions thereof near the bias-applying films due to an intensive bias magnetic field from the bias-applying films. However, the electrodes are disposed in an inner region having a high sensitivity avoiding those regions with a lower sensitivity to ensure a high sensitivity. The electrodes disposed on and under the magnetoresistive effect film are pillar-shaped to concentrate the sense current such that the sense current can be concentrically supplied exclusively to the region with the high sensitivity.
摘要:
A magnetic recording head includes a magnetic pole, a spin torque oscillator, a first shield and a second shield. The magnetic pole has an air-bearing surface. The spin torque oscillator is provided so that a first side of the spin torque oscillator faces the magnetic pole in a first direction parallel to the air-bearing surface. The first shield includes a granular magnetic material, and is provided so that two portions of the first shield sandwich the spin torque oscillator in a second direction which is parallel to the air-bearing surface and perpendicular to the first direction. The second shield is provided on a second side of the spin torque oscillator opposite to the first side.
摘要:
A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.
摘要:
An example magnetic recording head includes: a main magnetic pole; a laminated body; and a pair of electrodes. The laminated body includes a first magnetic layer having a coercivity lower than magnetic field applied by the main magnetic pole, a second magnetic layer having a coercivity lower than the magnetic field applied by the main magnetic pole, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The pair of electrodes is operable to pass a current through the laminated body.
摘要:
According to one embodiment, a magnetic recording head includes a main magnetic pole, a shield, and a stacked structure body. The shield is provided to oppose the main magnetic pole. The stacked structure body is provided between the main magnetic pole and the shield. The stacked structure body includes a first magnetic layer, a second magnetic layer, and an intermediate layer. The first magnetic layer has coercivity lower than a magnetic field applied from the main magnetic pole. A size of a film surface of the second magnetic layer is larger than a size of a film surface of the first magnetic layer. The intermediate layer is provided between the first magnetic layer and the second magnetic layer and is made of a nonmagnetic material. A current is configured to pass between the first magnetic layer and the second magnetic layer.
摘要:
According to one embodiment, a disk drive has a magnetic disk and a magnetic head having a spin-torque oscillator. The disk drive further has a head amplifier IC configured to supply a write signal and a drive signal to the magnetic head. The write signal corresponds to write data. The drive signal is supplied to generate a high-frequency magnetic field. The head amplifier IC continuously supplies a drive signal of normal level to the spin-torque oscillator, and supplies a drive signal of high level higher than the normal level, only for a prescribed time after the polarity inversion of the write signal.
摘要:
According to one embodiment, a magnetoresistive element includes a first ferromagnetic layer a magnetization direction of which is pinned, a second ferromagnetic layer a magnetization direction of which is changed depending on an external magnetic field, an intermediate layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and including an insulating layer and a magnetic conductive column, an alloy layer formed between the magnetic conductive column in the intermediate layer and the second ferromagnetic layer and including at least one of FeCoAl and FeCoAlCu, and a pair of electrodes configured to supply a current perpendicularly to a film plane of a stacked film including the first ferromagnetic layer, the intermediate layer, the alloy layer and the second ferromagnetic layer.