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    Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels
    41.
    发明授权
    Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels 有权
    用于实现具有能够形成一个或多个晶体管通道的多个量子线的微电子器件的结构和方法

    公开(公告)号：US07910917B2

    公开(公告)日：2011-03-22

    申请号：US11910802

    申请日：2006-04-10

    申请人： Thomas Ernst ,  Stephan Borel

    发明人： Thomas Ernst ,  Stephan Borel

    IPC分类号： H01L29/12 ,  H01L21/336

    CPC分类号： H01L29/78696 ,  B82Y10/00 ,  H01L29/42392 ,  H01L29/775

    摘要： A microelectronic device provided with one or more quantum wires, able to form one or more transistor channels, and optimized in terms of arrangement, shape, and/or composition. A method for fabricating the device includes forming, in one or more thin layers resting on a support, a first block and a second block in which at least one transistor drain region and at least one transistor source region are respectively intended to be formed, forming a structure connecting the first block to the second block, and forming, on the surface of the structure, wires connecting a first region of the first block with another region of the second block that faces the first region.

    摘要翻译： 设置有能够形成一个或多个晶体管通道并且在布置，形状和/或组成方面优化的一个或多个量子线的微电子器件。 一种用于制造该器件的方法包括在放置在支撑体上的一个或多个薄层中形成第一块和第二块，其中分别要形成至少一个晶体管漏极区和至少一个晶体管源极区，形成 将所述第一块与所述第二块连接的结构，以及在所述结构的表面上形成将所述第一块的第一区域与所述第二块的面向所述第一区域的另一区域连接的线。

    Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor
    42.
    发明授权
    Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor 有权
    将不同性质的有源区域直接制造到绝缘体上：应用于单栅极或双栅极MOS晶体管

    公开(公告)号：US07820523B2

    公开(公告)日：2010-10-26

    申请号：US11579037

    申请日：2004-06-25

    申请人： François Andrieu ,  Thomas Ernst ,  Simon Deleonibus

    发明人： François Andrieu ,  Thomas Ernst ,  Simon Deleonibus

    IPC分类号： H01L21/30

    CPC分类号： H01L27/1203 ,  H01L21/76275 ,  H01L21/84 ,  H01L29/045 ,  H01L29/78648 ,  H01L29/78684 ,  Y10S117/915

    摘要： The invention concerns a micro-electronic device comprising a substrate, a first insulating zone and a second insulating zone laying on said substrate, a first active zone comprising at least one layer made of a first semi-conductor crystalline material, resting on said first insulating zone which insulates it from the substrate, at least one second active zone comprising at least one layer in a second semi-conductor crystalline material, laying on said second insulating zone which insulates it from the substrate, said first semi-conductor crystalline material having a different composition from that of the second semi-conductor crystalline material and/or different crystalline orientation from that of the second semi-conductor crystalline material and/or mechanical strains from that of the second semi-conductor crystalline material.

    摘要翻译： 本发明涉及一种包括衬底，第一绝缘区和布置在所述衬底上的第二绝缘区的微电子器件，第一有源区包括由第一半导体晶体材料制成的至少一层，位于所述第一绝缘层上 所述第一半导体结晶材料具有与基底绝缘的区域，至少一个第二活性区域，包括在第二半导体结晶材料中的至少一个层，铺设在所述第二绝缘区域上， 与第二半导体结晶材料不同的组成和/或与第二半导体结晶材料不同的晶体取向和/或来自第二半导体晶体材料的机械应变。

    SRAM MEMORY CELL PROVIDED WITH TRANSISTORS HAVING A VERTICAL MULTICHANNEL STRUCTURE
    43.
    发明申请
    SRAM MEMORY CELL PROVIDED WITH TRANSISTORS HAVING A VERTICAL MULTICHANNEL STRUCTURE 有权
    具有垂直多通道结构的晶体管的SRAM存储单元

    公开(公告)号：US20100264496A1

    公开(公告)日：2010-10-21

    申请号：US12740907

    申请日：2008-11-07

    申请人： Olivier Thomas ,  Thomas Ernst

    发明人： Olivier Thomas ,  Thomas Ernst

    IPC分类号： H01L27/11 ,  H01L21/8244

    CPC分类号： G11C11/412 ,  H01L21/84 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/1203 ,  H01L29/42392 ,  H01L29/78696

    摘要： A microelectronic device including, on a substrate, at least one element such as a SRAM memory cell; one or more first transistor(s), respectively including a number k of channels (k≧1) parallel in a direction forming a non-zero angle with the main plane of the substrate, and one or more second transistor(s), respectively including a number m of channels, such that m>k, parallel in a direction forming a non-zero angle, or an orthogonal direction, with the main plane of the substrate.

    摘要翻译： 一种微电子器件，在衬底上包括诸如SRAM存储单元的至少一个元件; 分别包括在与衬底的主平面形成非零角度的方向上平行的k个通道（k≥1）和一个或多个第二晶体管的一个或多个第一晶体管 包括数个m个通道，使得与形成非零角度的方向或正交方向平行的m> k与衬底的主平面。

    METHOD OF MANUFACTURING NANOWIRES PARALLEL TO THE SUPPORTING SUBSTRATE
    44.
    发明申请
    METHOD OF MANUFACTURING NANOWIRES PARALLEL TO THE SUPPORTING SUBSTRATE 有权
    将纳米尺寸平行于支撑基板的方法

    公开(公告)号：US20090124050A1

    公开(公告)日：2009-05-14

    申请号：US12267431

    申请日：2008-11-07

    申请人： Erwan Dornel ,  Jean-Charles Barbe ,  Thomas Ernst

    发明人： Erwan Dornel ,  Jean-Charles Barbe ,  Thomas Ernst

    IPC分类号： H01L21/335 ,  H01L21/20

    CPC分类号： H01L29/42392 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/125 ,  H01L29/66439 ,  H01L29/7613 ,  H01L29/775 ,  H01L29/78645 ,  H01L29/78696

    摘要： A method of manufacturing at least one nanowire, the nanowire being parallel to its supporting substrate, the method comprising: the formation on the supporting substrate of a structure comprising a bar and two regions, a first end of the bar being secured to one of the two regions and a second end of the bar being secured to the other region, the width of the bar being less than the width of the regions, the subjection of the bar to an annealing under gaseous atmosphere in order to transform the bar into a nanowire, the annealing being carried out under conditions allowing control of the sizing of the neck produced during the formation of the nanowire.

    摘要翻译： 一种制造至少一个纳米线的方法，所述纳米线平行于其支撑衬底，所述方法包括：在所述支撑衬底上形成包括棒和两个区域的结构，所述棒的第一端固定到 两个区域和杆的第二端固定到另一个区域，杆的宽度小于区域的宽度，在棒状气体气氛下退火以将棒转变成纳米线 退火在允许控制在纳米线形成期间产生的颈部上浆的条件下进行。

    Production of a Transistor Gate on a Multibranch Channel Structure and Means for Isolating This Gate From the Source and Drain Regions
    45.
    发明申请
    Production of a Transistor Gate on a Multibranch Channel Structure and Means for Isolating This Gate From the Source and Drain Regions 审中-公开
    在多分支通道结构上生产晶体管栅极和从源极和漏极区域隔离该栅极的装置

    公开(公告)号：US20080277691A1

    公开(公告)日：2008-11-13

    申请号：US12097411

    申请日：2006-12-28

    申请人： Thomas Ernst ,  Christian Isheden

    发明人： Thomas Ernst ,  Christian Isheden

    IPC分类号： H01L29/76 ,  H01L21/4763

    CPC分类号： H01L29/78696 ,  H01L29/42392 ,  H01L29/66772

    摘要： A method for fabricating a microelectronic device including a support, an etched stack of thin layers including at least one first block and at least one second block resting on the support, in which at least one drain region and at least one source region, respectively, are capable of being formed, plural semiconductor bars connecting a first zone of the first block and another zone of the second block, and able to form a multi-branch transistor channel, or plural transistor channels. A gate surrounds the bars and is located between the first block and the second block, the gate being in contact with a first and second insulating spacer in contact with at least one sidewall of the first block and with at least one sidewall of the second block, respectively, and at least partially separated from the first block and the second block, via the insulating spacers.

    摘要翻译： 一种用于制造微电子器件的方法，其包括支撑体，蚀刻的薄层堆叠，其包括至少一个第一块和至少一个搁置在所述载体上的第二块，其中至少一个漏极区和至少一个源极区， 能够形成多个半导体条，连接第一块的第一区和第二块的另一个区，并且能够形成多分支晶体管沟道或多个晶体管沟道。 栅极围绕条围绕并且位于第一块和第二块之间，栅极与第一和第二绝缘垫片接触，第一和第二绝缘间隔件与第一块的至少一个侧壁接触并且与第二块的至少一个侧壁接触 并且经由绝缘间隔件至少部分地与第一块和第二块分离。

    Motion tracking system for real time adaptive imaging and spectroscopy
    46.
    发明申请
    Motion tracking system for real time adaptive imaging and spectroscopy 有权
    用于实时自适应成像和光谱的运动跟踪系统

    公开(公告)号：US20070280508A1

    公开(公告)日：2007-12-06

    申请号：US11804417

    申请日：2007-05-18

    申请人： Thomas Ernst ,  Thomas Prieto ,  Brian Armstrong

    发明人： Thomas Ernst ,  Thomas Prieto ,  Brian Armstrong

    IPC分类号： G01P13/00 ,  G06K9/00

    CPC分类号： A61B5/055 ,  A61B5/0077 ,  A61B5/1127 ,  A61B5/1128 ,  A61B5/721 ,  A61B5/7292 ,  A61B6/0492 ,  A61B6/547 ,  G01R33/28 ,  G01R33/56509 ,  G06K9/00624 ,  G06K2009/3291 ,  G06K2017/0045 ,  G06T7/0012 ,  G06T7/70 ,  H04N7/18

    摘要： Current MRI technologies require subjects to remain largely motionless for achieving high quality magnetic resonance (MR) scans, typically for 5-10 minutes at a time. However, lying absolutely still inside the tight MR imager (MRI) tunnel is a difficult task, especially for children, very sick patients, or the mentally ill. Even motion ranging less than 1 mm or 1 degree can corrupt a scan. This invention involves a system that adaptively compensates for subject motion in real-time. An object orientation marker, preferably a retro-grate reflector (RGR), is placed on a patients' head or other body organ of interest during MRI. The RGR makes it possible to measure the six degrees of freedom (x, y, and z-translations, and pitch, yaw, and roll), or “pose”, required to track the organ of interest. A camera-based tracking system observes the marker and continuously extracts its pose. The pose from the tracking system is sent to the MR scanner via an interface, allowing for continuous correction of scan planes and position in real-time. The RGR-based motion correction system has significant advantages over other approaches, including faster tracking speed, better stability, automatic calibration, lack of interference with the MR measurement process, improved ease of use, and long-term stability. RGR-based motion tracking can also be used to correct for motion from awake animals, or in conjunction with other in vivo imaging techniques, such as computer tomography, positron emission tomography (PET), etc.

    摘要翻译： 目前的MRI技术要求受试者保持大部分不动，以实现高质量的磁共振（MR）扫描，通常每次5-10分钟。 然而，谎言绝对仍然在严格的MR成像仪（MRI）隧道是一项艰巨的任务，特别是对于儿童，非常病的病人或精神病患者。 即使距离小于1mm或1度的运动也可能会损坏扫描。 本发明涉及一种实时自适应补偿受试者运动的系统。 在MRI期间将物体取向标记物（优选地是反转格栅反射器（RGR））放置在病人的头部或其他身体器官上。 RGR可以测量跟踪感兴趣的器官所需的六个自由度（x，y和z-平移，俯仰，偏航和滚动）或“姿势”。 基于相机的跟踪系统观察标记并持续提取其姿态。 来自跟踪系统的姿势通过接口被发送到MR扫描仪，允许实时扫描平面和位置的连续校正。 基于RGR的运动校正系统具有优于其他方法的显着优点，包括更快的跟踪速度，更好的稳定性，自动校准，对MR测量过程的干扰，改进的易用性和长期的稳定性。 还可以使用基于RGR的运动跟踪来校正来自清醒动物的运动，或者与其他体内成像技术（例如计算机断层摄影，正电子发射断层摄影（PET）等）相结合）。