公开(公告)号：US06687099B2

公开(公告)日：2004-02-03

申请号：US10270120

申请日：2002-10-15

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B539

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得构成磁阻效应元件的所有磁性层基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US06538844B2

公开(公告)日：2003-03-25

申请号：US10083104

申请日：2002-02-27

申请人： Hisashi Takano ,  Naoki Koyama ,  Hideo Tanabe ,  Eijin Moriwaki ,  Isamu Yuito ,  Kazuo Shiiki ,  Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Toshio Kobayashi ,  Hideo Todokoro ,  Chiaki Ishikawa

发明人： Hisashi Takano ,  Naoki Koyama ,  Hideo Tanabe ,  Eijin Moriwaki ,  Isamu Yuito ,  Kazuo Shiiki ,  Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Toshio Kobayashi ,  Hideo Todokoro ,  Chiaki Ishikawa

IPC分类号： G11B5187

CPC分类号： G11B5/3903 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/3103 ,  G11B5/3106 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3967

摘要： In a composite magnetic head comprising a magnetoresistive read head including a magnetic thin film having a magnetoresistive effect and soft magnetic members interposing the soft magnetic film between them through a non-magnetic insulation layer, an induction type write head-including poles formed in a moving direction of a medium and a conductor crossing the poles, and disposed in the proximity of the magnetoresistive head, and a substrate supporting these heads, the present invention discloses a composite magnetic head characterized in that part of a floating surface inclusive of the magnetic head constituent members has recesses and the read/write operations to and from the medium are effected by the portion interposed by these recesses.

摘要翻译： 在包括具有磁阻效应的磁性薄膜的磁阻读头的复合磁头和通过非磁性绝缘层将软磁体插入到它们之间的软磁性部件的情况下，形成在移动中的感应型写头包含磁极 介质和导体的方向，并且设置在磁阻头附近，以及支撑这些磁头的基板，本发明公开了一种复合磁头，其特征在于，包括磁头部件 构件具有凹部，并且来自介质的读/写操作由通过这些凹部插入的部分实现。

公开(公告)号：US06483677B2

公开(公告)日：2002-11-19

申请号：US09931897

申请日：2001-08-20

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B539

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US6011674A

公开(公告)日：2000-01-04

申请号：US626333

申请日：1996-04-02

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，可以极大地降低与磁记录介质的记录表面相对的磁性层的面积，因此可以通过具有一个磁记录介质的电流来检测来自高耐度记录磁记录介质的非常狭窄区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US5726837A

公开(公告)日：1998-03-10

申请号：US328090

申请日：1994-10-24

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US5401542A

公开(公告)日：1995-03-28

申请号：US18249

申请日：1993-02-16

申请人： Masahiro Kitada ,  Noboru Shimizu ,  Hideo Tanabe ,  Hitoshi Nakamura

发明人： Masahiro Kitada ,  Noboru Shimizu ,  Hideo Tanabe ,  Hitoshi Nakamura

IPC分类号： G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  B05D3/06 ,  B05D5/12

CPC分类号： G11B5/3903 ,  H01L43/08 ,  H01L43/10

摘要： In a magnetoresistive magnetic head which has a permalloy film (2, 22) as the magnetoresistive film and also has a shunt film for applying a transverse biasing magnetic field, an Nb film (3, 23) is formed as the shunt film by the electron-beam evaporation method to increase the heat resistance of the magnetoresistive element, thus making it possible to increase the temperature at which the magnetic head is manufactured.

摘要翻译： 在具有坡莫合金膜（2,22）作为磁阻膜并且还具有用于施加横向偏置磁场的分流膜的磁阻磁头中，通过电子形成作为分流膜的Nb膜（3,23） - 波束蒸发法以增加磁阻元件的耐热性，从而可以提高制造磁头的温度。

公开(公告)号：US5390061A

公开(公告)日：1995-02-14

申请号：US710775

申请日：1991-06-05

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件具有至少形成在相对的磁体上的端子 层，使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US5287237A

公开(公告)日：1994-02-15

申请号：US668069

申请日：1991-03-12

申请人： Masahiro Kitada ,  Noboru Shimizu ,  Hideo Tanabe ,  Ryoichi Nakatani ,  Isamu Yuito ,  Naoki Koyama

发明人： Masahiro Kitada ,  Noboru Shimizu ,  Hideo Tanabe ,  Ryoichi Nakatani ,  Isamu Yuito ,  Naoki Koyama

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/30 ,  B32B15/00 ,  G11B5/147

CPC分类号： B82Y25/00 ,  G01R33/09 ,  G11B5/3113 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/002 ,  H01F10/3218 ,  H01L43/08 ,  G11B5/3163 ,  Y10T428/1107 ,  Y10T428/12861

摘要： In order to prevent generation of Barkhausen noise of a magnetoresistance-effect element, a thin antiferromagnetic film formed of Fe-Mn-X alloy containing a third alloying element X (which serves to improve corrosion resistance of Fe-Mn alloy) by 0.1 to 20 atomic % is disposed in adjacent to a thin permalloy film. The element X is selected from the group consisting of Ir, Ru, Zr, Nb, Si, Ge, V, Co, Pt and Pd. It is particularly recommended to employ Ir of 4 to 15 atomic % or Ru of 5.5 to 15 atomic % as the element X. When one or more alloying element selected from Ru, Rh, Pt, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge is added to Fe and Mn which are essential components of the Fe-Mn-X alloy in addition to the element X, corrosion resistance of the alloy is improved more sufficiently.

摘要翻译： 为了防止产生具有磁阻效应元件的巴克豪森噪声，由含有第三合金元素X（用于提高Fe-Mn合金的耐腐蚀性）的Fe-Mn-X合金形成的薄的反铁磁性膜为0.1〜20 原子％设置在薄坡坡合金膜附近。 元素X选自Ir，Ru，Zr，Nb，Si，Ge，V，Co，Pt和Pd。 特别推荐使用4〜15原子％的Ir或5.5〜15原子％的Ru作为元素X.当选自Ru，Rh，Pt，Ti，Zr，Hf，V，Nb中的一种或多种合金元素时， 除了元素X之外，还添加了作为Fe-Mn-X合金的必要成分的Fe和Mn中的Ta，Cr，Mo，W，Ni，Cu，Al，Si和Ge，合金的耐腐蚀性提高 充分地。

公开(公告)号：US4907114A

公开(公告)日：1990-03-06

申请号：US201739

申请日：1988-06-03

申请人： Kazuo Shiiki ,  Masahiro Kitada ,  Hideo Tanabe ,  Hitoshi Nakamura ,  Isamu Yuito ,  Hisashi Takano

发明人： Kazuo Shiiki ,  Masahiro Kitada ,  Hideo Tanabe ,  Hitoshi Nakamura ,  Isamu Yuito ,  Hisashi Takano

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  G11B5/3987

摘要： A magneto-resistive type read head has a substrate, a magnetic film exhibiting a magneto-resistive effect arranged in the widthwise direction of the track of a magnetic writing disk, and lead electrodes for feeding an electric current to the track width portion of the magnetic film for reading the signals written in the magnetic writing disk. The magneto-resistive film extends over a width wider than the track width portion and a soft magnetic thin film is formed over the magneto-resistive film on either side of the track width portion to absorb the domain wall so that the magneto-resistive film takes the single domain structure.

摘要翻译： 磁阻型读取头具有衬底，在磁性写盘的轨道的宽度方向上布置的磁阻效应的磁性膜和用于将电流馈送到磁性磁道的磁道宽度部分的引线电极 用于读取写入磁性写入盘的信号的胶片。 磁阻薄膜的宽度大于轨道宽度部分的宽度，并且在磁道宽度部分两侧的磁阻膜上方形成软磁性薄膜，以吸收畴壁，使得磁阻薄膜 单域结构。

公开(公告)号：US4841399A

公开(公告)日：1989-06-20

申请号：US936617

申请日：1986-12-01

申请人： Masahiro Kitada ,  Noboru Shimizu ,  Hideo Tanabe ,  Hitoshi Nakamura ,  Tetsuo Kobayashi ,  Tooru Takeura ,  Kazuhiro Momata

发明人： Masahiro Kitada ,  Noboru Shimizu ,  Hideo Tanabe ,  Hitoshi Nakamura ,  Tetsuo Kobayashi ,  Tooru Takeura ,  Kazuhiro Momata

IPC分类号： G11B5/39

CPC分类号： G11B5/399 ,  G11B5/3903

摘要： The use of a pure zirconium film as a shunt film in a magnetoresistive head having a permalloy film as a magnetoresistive film and a shunt film for application of a transverse biasing magnetic field serves to improve the heat resistance of the magnetoresistive element and allows an increase in the temperature used in the process for producing a magnetic head.

摘要翻译： 在具有坡莫合金膜作为磁阻膜的磁阻头中使用纯锆膜作为分流膜，以及用于施加横向偏置磁场的分流膜用于提高磁阻元件的耐热性，并且允许增加 用于制造磁头的过程中使用的温度。