公开(公告)号：US6072206A

公开(公告)日：2000-06-06

申请号：US272339

申请日：1999-03-19

申请人： Hirofumi Yamashita ,  Ikuko Inoue ,  Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hidetoshi Nozaki

发明人： Hirofumi Yamashita ,  Ikuko Inoue ,  Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hidetoshi Nozaki

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L31/03529 ,  Y02E10/50

摘要： The present invention provides a solid state image sensor constructed in such a manner that, even if the impurity concentration of the wells of a transistors is increased, the junction leakage current does not increase, and thus, the picture quality of the reproduced picture is not deteriorated. On a p-type substrate, there are formed a first p-type well for a photoelectric conversion portion comprising a photodiode, and a second p-type well for a signal scanning circuit portion. In the surface portions of the first and second p-type wells, a first and a second n-type diffused layers are formed, respectively. The drain of a reset transistor and the drain of an amplifying transistor which constitute the second n-type diffused layer are connected to a power supply line. Further, the source of an address transistor which is an n-type diffused layer is connected to a vertical signal line. The gates of the amplifying transistor and the address transistor are formed between second n-type diffused layers disposed at predetermined intervals on the surface of the second p-type well.

摘要翻译： 本发明提供了一种固态图像传感器，其构造方式是，即使晶体管的阱的杂质浓度增加，结漏电流也不增加，因此再现图像的图像质量不是 恶化 在p型衬底上形成有用于光电转换部分的第一p型阱以及用于信号扫描电路部分的第二p型阱。 在第一和第二p型阱的表面部分分别形成第一和第二n型扩散层。 构成第二n型扩散层的复位晶体管的漏极和放大晶体管的漏极连接到电源线。 此外，作为n型扩散层的地址晶体管的源极连接到垂直信号线。 放大晶体管和地址晶体管的栅极形成在第二p型阱的表面上以预定间隔设置的第二n型扩散层之间。

公开(公告)号：US07825966B2

公开(公告)日：2010-11-02

申请号：US11872521

申请日：2007-10-15

申请人： Sohei Manabe ,  Ashish Shah ,  Sasidhar Saladi ,  William Qian ,  Hidetoshi Nozaki ,  Nagaraja Satyadev ,  Hsin-Chih (Dyson) Tai ,  Howard M. Rhodes

发明人： Sohei Manabe ,  Ashish Shah ,  Sasidhar Saladi ,  William Qian ,  Hidetoshi Nozaki ,  Nagaraja Satyadev ,  Hsin-Chih (Dyson) Tai ,  Howard M. Rhodes

IPC分类号： H04N5/335

CPC分类号： H04N5/3592 ,  H04N5/2355 ,  H04N5/3535 ,  H04N5/35554 ,  H04N5/37457

摘要： An image sensor has at least two photodiodes in each unit pixel. A high dynamic range is achieved by selecting different exposure times for the photodiodes. Additionally, blooming is reduced. The readout timing cycle is chosen so that the short exposure time photodiodes act as drains for excess charge overflowing from the long exposure time photodiodes. To improve draining of excess charge, the arrangement of photodiodes may be further selected so that long exposure time photodiodes are neighbored along vertical and horizontal directions by short exposure time photodiodes. A micro-lens array may also be provided in which light is preferentially coupled to the long exposure time photodiodes to improve sensitivity.

摘要翻译： 图像传感器在每个单位像素中具有至少两个光电二极管。 通过为光电二极管选择不同的曝光时间来实现高动态范围。 另外，开花减少。 选择读出定时周期，使得短曝光时间光电二极管充当从长曝光时间光电二极管溢出的过量电荷的漏极。 为了改善过剩电荷的排出，可以进一步选择光电二极管的布置，使得长曝光时间光电二极管通过短曝光时间光电二极管沿垂直和水平方向相邻。 还可以提供微透镜阵列，其中光优先地耦合到长曝光时间光电二极管以提高灵敏度。

公开(公告)号：US07825444B2

公开(公告)日：2010-11-02

申请号：US12690024

申请日：2010-01-19

申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

IPC分类号： H01L31/062

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/0288

摘要： An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

公开(公告)号：US07666703B2

公开(公告)日：2010-02-23

申请号：US11036647

申请日：2005-01-14

申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/0288

摘要： An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

摘要翻译： 使用具有掺杂有铟的多晶硅栅极的传输栅极的有源像素。 像素包括形成在半导体衬底中的感光元件和形成在半导体衬底中的n型浮动节点。 在浮动节点和感光元件之间形成具有传输门的n沟道传输晶体管。 像素衬底具有掺杂有铟掺杂剂的横向掺杂梯度。

公开(公告)号：US20090236498A1

公开(公告)日：2009-09-24

申请号：US12054296

申请日：2008-03-24

申请人： Satyadev Nagaraja ,  Hidetoshi Nozaki

发明人： Satyadev Nagaraja ,  Hidetoshi Nozaki

IPC分类号： H01L27/00 ,  H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14612 ,  H01L27/14689 ,  H01L29/42368

摘要： A light sensor cell includes a photosensitive element, a floating diffusion region, and a gate oxide disposed between the photosensitive element and the floating diffusion region. The gate oxide has a non-uniform thickness, with a greater thickness near the photosensitive element and a lesser thickness near the floating diffusion region. A transfer gate is disposed on the gate oxide. The transfer gate has a non-uniform threshold voltage, with a greater threshold voltage near the photosensitive element and a lesser threshold voltage near the floating diffusion region.

摘要翻译： 光传感器单元包括感光元件，浮动扩散区域和设置在感光元件和浮动扩散区域之间的栅极氧化物。 栅极氧化物具有不均匀的厚度，在感光元件附近具有更大的厚度，并且在浮动扩散区附近具有较小的厚度。 传输栅极设置在栅极氧化物上。 传输门具有不均匀的阈值电压，在感光元件附近具有较大的阈值电压，并且在浮动扩散区附近具有较小的阈值电压。

公开(公告)号：US20090200590A1

公开(公告)日：2009-08-13

申请号：US12259143

申请日：2008-10-27

申请人： Duli Mao ,  Sohei Manabe ,  Vincent Venezia ,  Hsin-Chih Tai ,  Hidetoshi Nozaki ,  Yin Qian ,  Howard E. Rhodes

发明人： Duli Mao ,  Sohei Manabe ,  Vincent Venezia ,  Hsin-Chih Tai ,  Hidetoshi Nozaki ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H01L31/113 ,  H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/103

摘要： An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.

摘要翻译： 使用衬底形成像素阵列，其中每个像素具有背面的衬底和包括金属化层的前面，在衬底中形成的光电二极管，使用与感光区域相邻的前端处理形成的前侧P阱， 以及形成在光电二极管下方的衬底中的N型区域。 N型区域形成在光电二极管下面的衬底的区域中，并且至少部分地形成在衬底的比前面P阱的深度更深的区域中。

公开(公告)号：US20070262241A1

公开(公告)日：2007-11-15

申请号：US11826927

申请日：2007-07-19

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689

摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate; a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.

公开(公告)号：US07224003B2

公开(公告)日：2007-05-29

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/0328

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US20060157645A1

公开(公告)日：2006-07-20

申请号：US11347857

申请日：2006-02-06

申请人： Sohei Manabe ,  Hidetoshi Nozaki

发明人： Sohei Manabe ,  Hidetoshi Nozaki

IPC分类号： H01L31/00 ,  H01L27/00

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H04N5/374

摘要： A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor with its gate coupled to the output node is provided.

摘要翻译： 公开了一种在CMOS图像传感器中使用的像素传感器单元。 电池包括形成在P型中的钉扎光电二极管，其形成在N型半导体衬底中。 传输晶体管被放置在钉扎光电二极管和输出节点之间。 复位晶体管耦合在高电压轨V IN和输出节点之间。 最后，提供一个输出晶体管，其栅极耦合到输出节点。

公开(公告)号：US07042061B2

公开(公告)日：2006-05-09

申请号：US10727515

申请日：2003-12-05

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06 ,  H01L27/148

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。