摘要:
A copier includes one motor for driving a photoconductive element unit, a developing unit, a fixing unit and other units, and another motor for driving an optical system. A clutch is interposed between the various units and the motor adapted to drive them. A device is provided for uncoupling the clutch for a predetermined period of time to interrupt the transmission of a drive force to the various units. The motor assigned to the units, clutch and drive force interrupting device are controlled such that the drive force interrupting device maintains the clutch uncoupled until the motor reaches a predetermined synchronous rotation speed after the start of rotation so as to interrupt the transmission of the drive force to the load, the clutch being coupled upon the lapse of the predetermined period of time to drive the load.
摘要:
An electron beam exposure system and method which varies beam size from pattern to pattern corresponding to the accuracy required for each pattern. In order to improve the throughput of the exposer, the beam size is adjusted to the maximum size useable for each pattern. The pattern is divided into rectangles equal to the maximum beam size determined by the pattern size or the accuracy required for the pattern. If a residual part of the pattern smaller than a rectangle remains, the rectangles are adjusted to be smaller than the maximum beam size, so the entire area of the pattern can be divided into equal size rectangles. The pitch and size of the beam are adjusted to this new beam size and exposure is repeated according to the new size rectangles. To increase the processing speed, all the patterns to be exposed in one process are checked as to their size and required accuracy, and the data necessary for the pattern generation such as beam size, pitch and number of exposures are calculated in advance and stored in a memory of a beam controller.
摘要:
An electron beam exposure apparatus having a control apparatus wherein the positioning error caused by transient response characteristics of an electron beam deflection device is detected by using a knife-edge type gauge and a reflecting electron detector. A compensation signal to compensate for the positioning error is produced in a compensation device, and the compensation signal is applied to the electron beam deflection device, whereby the deviation of the position of the electron beam, from the normal position, caused by the transient response characteristics, is reduced.
摘要:
New compounds useful as immunoregulatory and antineoplastic agents are amino-acid derivatives of formula: ##STR1## wherein: n is an integer from 1 to 5;R.sup.1 is a hydrogen atom, an alkyl group, a haloalkyl group, a halogen atom, a mercapto group, an alkylmercapto group, a hydroxy group, an alkoxy group, an acyloxy group, a carboxyl group, an alkoxycarbonyl group, an amino group, an alkyl-substituted amino group, an aryl-substituted amino group, an acylamino group, a haloalkoxycarbonylamino group, an alkanesulphonyl group, a nitro group or a cyano group (and, when n is an integer from 2 to 5, the radicals R.sup.1 may be the same or different);R.sup.2 and R.sup.3 may be the same or different and each is a hydrogen atom or an alkyl group;R.sup.4 is a hydrogen atom, an alkyl group, a cyano group, a cyanoalkyl group, a hydroxyalkyl group, an alkoxycarbonyl group, a carboxyl group, an aryl group, an aralkyl group, a mercaptoalkyl group, an alkylthioalkyl group, or a thioalkyl group (the free bond of the sulphur in said thioalkyl group being joined to the sulphur of another moiety of the same formula); andA is a hydroxy group, an alkoxy group, an amino group, an alkyl-substituted amino group (optionally halogen- or carbamoyl- substituted in the alkyl moiety), a hydrazino group, an alkyl- or aryl- substituted hydrazino group, a hydroxylamino group, an alkoxyamino group or an aralkyloxyamino group;and the pharmaceutically acceptable salts thereof.
摘要:
A conductor pattern consisting of conductor lines is formed in an electronic device by an electron-beam lithography process using a positive resist. After the formation of a positive resist layer on a conductive layer, a linear pattern of latent images is formed by exposure of an electron-beam along the contours of the conductor lines to be formed. The positive resist layer is developed and then serves as a mask against an etchant. The conductive layer is selectively etched to divide it into the patterned conductor lines and remaining conductor portions.
摘要:
An electron beam exposure system for projecting an electron beam onto a medium placed on a continuously moving stage, comprises a correction memory storing correction data for at least one of a field curvature, an astigmatism, and a distortion which changes in accordance with a deflection amount of the electron beam. An amount of actual deflection of the electron beam is obtained from the difference between a position data of the medium and the beam deflection position data with the electron beam then being controlled by the corresponding correction data read from the correction memory according to the amount of beam deflection.
摘要:
A method for producing polyester fibers having excellent dyeability with basic dyes or disperse dyes, which comprises melt-spinning a polyester comprising predominantly (at least 80% by mol) repeating units of ethylene terephthalate and containing 0.5% by mol or more, preferably 1.5 to 5% by mol of an ester unit derived from a dicarboxylic acid or diol containing at least one metal sulfonate group under the condition of being highly oriented so as to give filaments having a birefringence (.DELTA.n) of 0.015 to 0.100 and drawing the resulting filaments at a fixed temperature and in a fixed draw ratio, and the polyester fibers which can be dyed with basic dyes or disperse dyes at a temperature of less than 100.degree. C at a sufficiently high dye adsorption rate to give dyed fibers.
摘要:
An integrated semiconductor structure that has first and second bipolar transistor structures. The first bipolar transistor structure has a doped tank region in contact with a doped tank region located underneath a contacting sinker. The second bipolar transistor structure has a doped buried region that is the same dopant type as its doped tank region. A method for fabricating an integrated semiconductor structure in a bulk semiconductor wafer. A first patterned photomask is used to form a doped buried region and a doped tank region within the first bipolar transistor structure. A second patterned photomask is used to form a doped buried region and a doped tank region within the second bipolar transistor, plus a doped buried region and a doped tank region underneath a contacting sinker adjacent to the first bipolar transistor.
摘要:
An object of the present invention is to provide a novel photobase generator which can sensitively generate a base even by h-ray in place of a conventional 2-nitro-4,5-dimethoxybenzyloxycarbonylamine compound. Disclosed is an N-(α-aromatic group-substituted-2-nitro-4,5-dialkoxybenzyloxycarbonyl)amine compound represented by the following general formula (I). (In the above formula (I), R1 to R9 denote specific groups.)
摘要:
The present invention is regarding plants and plant storage organs thereof in which GLP-1 derivatives are accumulated, and methods of producing them. The transgenic plants and plant storage organs thereof accumulate tandem repeated GLP-1 derivatives cleavable with intestinal digestive enzyme to monomeric molecules and are produced by methods comprising: integrating into vectors linked DNAs which comprise tandem repeated DNAs encoding the GLP-1 derivative with trypsin resistance in which the amino acid in the 26th position is Gln, the amino acid in the 34th position is Asn or Asp, and C-terminal consists of Arg or Lys to produce monomeric molecules; introducing the vectors into plant cells; and redifferentiating the obtained transformants. The edible transgenic plants and plant storage organs are useful for treating diabetes and can be ingested by diabetic patients.