公开(公告)号：US4586141A

公开(公告)日：1986-04-29

申请号：US536322

申请日：1983-09-27

申请人： Hiroshi Yasuda ,  Haruo Tsuchikawa ,  Junichi Kai ,  Koichi Kobayashi

发明人： Hiroshi Yasuda ,  Haruo Tsuchikawa ,  Junichi Kai ,  Koichi Kobayashi

IPC分类号： H01J37/305 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30 ,  G06F15/62

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01L21/30 ,  H01J2237/31764 ,  H01J2237/31776

摘要： An electron beam exposure system and method which varies beam size from pattern to pattern corresponding to the accuracy required for each pattern. In order to improve the throughput of the exposer, the beam size is adjusted to the maximum size useable for each pattern. The pattern is divided into rectangles equal to the maximum beam size determined by the pattern size or the accuracy required for the pattern. If a residual part of the pattern smaller than a rectangle remains, the rectangles are adjusted to be smaller than the maximum beam size, so the entire area of the pattern can be divided into equal size rectangles. The pitch and size of the beam are adjusted to this new beam size and exposure is repeated according to the new size rectangles. To increase the processing speed, all the patterns to be exposed in one process are checked as to their size and required accuracy, and the data necessary for the pattern generation such as beam size, pitch and number of exposures are calculated in advance and stored in a memory of a beam controller.

摘要翻译： 一种电子束曝光系统和方法，其根据每种图案所需的精度将光束尺寸从图案变化到图案。 为了提高曝光机的吞吐量，将光束尺寸调整到每个图案可用的最大尺寸。 该图案被分成等于由图案尺寸或图案所需精度确定的最大光束尺寸的矩形。 如果小于矩形的图案的剩余部分保留，则矩形被调整为小于最大光束尺寸，因此图案的整个区域可以被划分成相等尺寸的矩形。 光束的间距和尺寸被调整到这个新的光束尺寸，并且根据新的尺寸矩形重复曝光。 为了提高处理速度，将检查在一个处理中暴露的所有图案的尺寸和所需的精度，并且预先计算诸如光束尺寸，间距和曝光次数的图案生成所需的数据并存储在 光束控制器的存储器。

公开(公告)号：US4585943A

公开(公告)日：1986-04-29

申请号：US502571

申请日：1983-06-09

申请人： Hiroshi Yasuda ,  Haruo Tsuchikawa

发明人： Hiroshi Yasuda ,  Haruo Tsuchikawa

IPC分类号： H01L21/027 ,  H01J37/304 ,  H01J37/317 ,  H01L21/30 ,  H01J37/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174 ,  H01L21/30 ,  H01J2237/0209 ,  H01J2237/15 ,  H01J2237/3045 ,  H01J2237/30455

摘要： An electron beam exposure apparatus having a control apparatus wherein the positioning error caused by transient response characteristics of an electron beam deflection device is detected by using a knife-edge type gauge and a reflecting electron detector. A compensation signal to compensate for the positioning error is produced in a compensation device, and the compensation signal is applied to the electron beam deflection device, whereby the deviation of the position of the electron beam, from the normal position, caused by the transient response characteristics, is reduced.

摘要翻译： 一种具有控制装置的电子束曝光装置，其中通过使用刀刃式量规和反射电子检测器来检测由电子束偏转装置的瞬态响应特性引起的定位误差。 在补偿装置中产生用于补偿定位误差的补偿信号，并且补偿信号被施加到电子束偏转装置，由此由瞬态响应引起的电子束与正常位置的位置的偏离 特点，减少。

公开(公告)号：US4968893A

公开(公告)日：1990-11-06

申请号：US339887

申请日：1989-04-18

申请人： Hiroshi Yasuda ,  Haruo Tsuchikawa ,  Takayuki Miyazaki

发明人： Hiroshi Yasuda ,  Haruo Tsuchikawa ,  Takayuki Miyazaki

IPC分类号： H01J37/305 ,  H01J37/30 ,  H01J37/302 ,  H01L21/027

CPC分类号： H01J37/302 ,  H01J37/3007 ,  H01J37/3023

摘要： A scanning electron beam exposure system includes two apertures (39a, 48a) for forming a rectangular beam (31). The cross section of the rectangular beam is changed by a deflection unit (47X, 47Y) arranged between the two apertures. The rectangular beam is refocused by a refocusing coil (51) to improve the peripheral sharpness of a projected image of the beam. The refocusing coil is controlled in accordance with the cross section (X.sub.1, Y.sub.1) of the beam.

摘要翻译： 扫描电子束曝光系统包括用于形成矩形光束（31）的两个孔（39a，48a）。 矩形梁的横截面由布置在两个孔之间的偏转单元（47X，47Y）改变。 矩形光束被重新聚焦线圈（51）重新聚焦，以改善光束的投影图像的周边清晰度。 根据梁的横截面（X1，Y1）控制重新聚焦线圈。

公开(公告)号：US4583077A

公开(公告)日：1986-04-15

申请号：US536467

申请日：1983-09-27

申请人： Hiroshi Yasuda ,  Haruo Tsuchikawa

发明人： Hiroshi Yasuda ,  Haruo Tsuchikawa

IPC分类号： H01J37/305 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H03M1/00 ,  H03K13/05

CPC分类号： H01L21/30 ,  H03M1/74

摘要： In a D/A converter in a deflection system of an electron beam exposure device, the most significant bits (m bits) of input digital data consisting of n bits are input into a decoder circuit, and 2.sup.m D/A converters which correspond to the m bits are provided. The data consisting of the least significant bits (n-m bits) is input into the 2.sup.m D/A converters via 2.sup.m gates, respectively. The decoder circuit is constructed so as to control the 2.sup.m gates so that when the content of the data of the m bits is S, the first to S-th data of the 2.sup.m D/A converters is all rendered to be "1", the data of the (S+1)-th D/A converter remains the same as the data of the n-m bits, and the data of the (S+2)-th and subsequent D/A converters is all rendered to be "0", the sum of the outputs of the 2.sup.m D/A converters being applied to a coil which deflects the electron beam.

摘要翻译： 在电子束曝光装置的偏转系统中的D / A转换器中，由n位组成的输入数字数据的最高有效位（m位）被输入到解码器电路中，对应于2m的D / A转换器 提供m位。 由最低有效位（n-m位）组成的数据分别通过2m个门输入到2m D / A转换器。 解码器电路被构造成控制2m个门，使得当m位的数据的内容为S时，2m D / A转换器的第一至第S数据全部变为“1” 第（S + 1）个D / A转换器的数据与nm位的数据保持相同，并且第（S + 2）和随后的D / A转换器的数据全部变为“ 0“，2m D / A转换器的输出之和被施加到偏转电子束的线圈上。

公开(公告)号：US08536002B2

公开(公告)日：2013-09-17

申请号：US13567552

申请日：2012-08-06

申请人： Hiroshi Yasuda ,  Berthold Staufer

发明人： Hiroshi Yasuda ,  Berthold Staufer

IPC分类号： H01L21/8238

CPC分类号： H01L27/0623 ,  H01L21/8249 ,  H01L29/1004 ,  H01L29/66287 ,  H01L29/732 ,  H01L29/7833

摘要： A process of forming an integrated circuit containing a bipolar transistor and an MOS transistor, by forming a base layer of the bipolar transistor using a non-selective epitaxial process so that the base layer has a single crystalline region on a collector active area and a polycrystalline region on adjacent field oxide, and concurrently implanting the MOS gate layer and the polycrystalline region of the base layer, so that the base-collector junction extends into the substrate less than one-third of the depth of the field oxide, and vertically cumulative doping density of the polycrystalline region of the base layer is between 80 percent and 125 percent of a vertically cumulative doping density of the MOS gate. An integrated circuit containing a bipolar transistor and an MOS transistor formed by the described process.

摘要翻译： 通过使用非选择性外延工艺形成双极型晶体管的基极层，使得基极层在集电极有源区域上具有单一结晶区域和多晶硅层，形成包含双极晶体管和MOS晶体管的集成电路的工艺 区域，并且同时注入基极层的MOS栅极层和多晶区域，使得基极 - 集电极结延伸到小于场氧化物深度的三分之一的衬底中，并且垂直累积掺杂 基极层的多晶区域的密度在MOS栅极的垂直累积掺杂密度的80％至125％之间。 包含双极晶体管和通过所描述的工艺形成的MOS晶体管的集成电路。

公开(公告)号：US08450179B2

公开(公告)日：2013-05-28

申请号：US11670729

申请日：2007-02-02

申请人： Badih El-Kareh ,  Hiroshi Yasuda ,  Scott Balster

发明人： Badih El-Kareh ,  Hiroshi Yasuda ,  Scott Balster

IPC分类号： H01L21/331

CPC分类号： H01L29/7378 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/0825 ,  H01L29/66242

摘要： A method for fabricating a semiconductor device having a first and second bipolar devices of the same dopant type includes: depositing a dielectric layer over a semiconductor layer, depositing a gate conductor layer over the dielectric layer, defining base regions of both bipolar devices, removing the gate conductor layer and dielectric layer in the base regions, depositing a base layer on the gate conductor layer and on the exposed semiconductor layer in the base regions, depositing an insulating layer over the base layer, forming a photoresist layer and defining emitter regions of both bipolar devices, removing the photoresist layer in the emitter regions thereby forming two emitter windows, masking the emitter window of the first bipolar device and exposing the base layer in the base region of the second bipolar device to an additional emitter implant through the associated emitter window.

摘要翻译： 一种用于制造具有相同掺杂剂类型的第一和第二双极器件的半导体器件的方法包括：在半导体层上沉积介电层，在电介质层上沉积栅极导体层，限定两个双极器件的基极区域， 栅极导体层和电介质层，在栅极导体层和基极区域的暴露的半导体层上沉积基底层，在基底层上沉积绝缘层，形成光致抗蚀剂层并限定两者的发射极区域 去除发射极区域中的光致抗蚀剂层，从而形成两个发射器窗口，掩蔽第一双极器件的发射极窗口，并将第二双极器件的基极区域中的基极层通过相关的发射极窗口暴露于另外的发射体注入 。

公开(公告)号：US08222619B2

公开(公告)日：2012-07-17

申请号：US12586717

申请日：2009-09-25

申请人： Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

发明人： Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

IPC分类号： A61N5/00 ,  G21G5/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/24507 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542

摘要： A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.

摘要翻译： 多列电子束曝光装置包括：多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器，并且用于调节各列电池的电子束，使得在列中使用的电子束的性质 细胞可以大致相同。 电子束特性可以是要发射的电子束的光束位置，光束强度和光束形状中的任何一个。 电子束特性检测单元可以是用于在其上形成有参考标记的校准芯片或法拉第杯。

公开(公告)号：US20110226967A1

公开(公告)日：2011-09-22

申请号：US13068995

申请日：2011-05-25

申请人： Akio Yamada ,  Tomohiro Sakazaki ,  Hiroshi Yasuda

发明人： Akio Yamada ,  Tomohiro Sakazaki ,  Hiroshi Yasuda

IPC分类号： G21K5/00

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.

摘要翻译： 一种电子束光刻设备，包括：存储器，用于根据设备图案所要求的准确度，对分配了等级的绘图图形进行数据存储;绘图模式调整单元，基于该等级生成分割图形的数据;结算等待时间调整 基于等级确定结算等待时间的单元，以及基于划分的绘图图案和结算等待时间的数据来照射电子束时绘制设备图案的控制器。 绘制图案调整单元基于等级来确定分割绘制图案的长边长度的上限或划分的绘制图案的区域的上限，并且基于上限划分绘图图案。

公开(公告)号：US20110057289A1

公开(公告)日：2011-03-10

申请号：US12718142

申请日：2010-03-05

申请人： Rick L. Wise ,  Hiroshi Yasuda

发明人： Rick L. Wise ,  Hiroshi Yasuda

IPC分类号： H01L29/73 ,  H01L21/331

CPC分类号： H01L29/36 ,  H01L21/02063 ,  H01L21/2254 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/73 ,  H01L29/7325

摘要： An integrated circuit containing a bipolar transistor including an emitter diffused region with a peak doping density higher than 1·1020 atoms/cm3, and an emitter-base junction less than 40 nanometers deep in a base layer. A process of forming the bipolar transistor, which includes forming an emitter dopant atom layer between a base layer and an emitter layer, followed by a flash or laser anneal step to diffuse dopant atoms from the emitter dopant atom layer into the base layer.

摘要翻译： 一种包含双极晶体管的集成电路，其包括具有高于1×1020原子/ cm3的峰值掺杂密度的发射极扩散区域，以及在基极层中小于40纳米深的发射极 - 基极结。 一种形成双极晶体管的工艺，其包括在基极层和发射极层之间形成发射极掺杂剂原子层，随后进行闪光或激光退火步骤，以将掺杂剂原子从发射极掺杂剂原子层扩散到基底层中。

公开(公告)号：US07847272B2

公开(公告)日：2010-12-07

申请号：US11235422

申请日：2005-09-26

申请人： Hiroshi Yasuda ,  Akio Yamada

发明人： Hiroshi Yasuda ,  Akio Yamada

IPC分类号： A61N5/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J2237/31769

摘要： An electron beam exposure system is designed to correct a proximity effect. The electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions that are arranged so that sizes of the opening portions change at a predetermined rate in order of arrangement; a mask deflection unit for deflecting the electron beam on the electron beam exposure mask; a substrate deflection unit for deflecting and projecting the electron beam onto a substrate; and a control unit for controlling deflection amounts in the mask deflection unit and the substrate deflection unit. The direction or directions of the change may be any one of a row direction and a column direction or may be the row and column directions.

摘要翻译： 电子束曝光系统设计用于校正邻近效应。 电子束曝光系统包括：用于产生电子束的电子束产生单元; 电子束曝光掩模，其具有开口部，其设置成使得开口部的尺寸按照布置的顺序以预定的速率变化; 用于使电子束在电子束曝光掩模上偏转的掩模偏转单元; 用于将电子束偏转和投影到衬底上的衬底偏转单元; 以及用于控制掩模偏转单元和基板偏转单元中的偏转量的控制单元。 改变的方向或方向可以是行方向和列方向中的任何一个，或者可以是行和列方向。