公开(公告)号：US08580652B2

公开(公告)日：2013-11-12

申请号：US12875628

申请日：2010-09-03

申请人： Atsuko Kawasaki ,  Kenichiro Hagiwara ,  Ikuko Inoue ,  Kazutaka Akiyama ,  Itsuko Sakai ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Yoshiteru Koseki ,  Hiroki Neko ,  Koushi Tozuka ,  Kazuhiko Nakadate ,  Takuto Inoue

发明人： Atsuko Kawasaki ,  Kenichiro Hagiwara ,  Ikuko Inoue ,  Kazutaka Akiyama ,  Itsuko Sakai ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Yoshiteru Koseki ,  Hiroki Neko ,  Koushi Tozuka ,  Kazuhiko Nakadate ,  Takuto Inoue

IPC分类号： H01L29/78

CPC分类号： H01L27/14683 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L24/13 ,  H01L24/32 ,  H01L27/14618 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12043 ,  H01L2924/3025 ,  H01L2924/00

摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

摘要翻译： 根据一个实施例，公开了一种半导体器件的制造方法。 半导体器件包括具有第一和第二主表面的半导体衬底，以及穿过第一和第二主表面之间的通孔，第一主表面上的焊盘，通孔中的通孔，以及包括 连接部分，以直接连接焊盘和通孔，以及另一个连接部分，以间接连接焊盘和通孔。 该方法包括在第一主表面中形成隔离区，隔离区位于要形成通孔的区域中，并且位于除了形成通孔的区域之外的区域中，形成垫， 以及通过处理所述衬底形成所述通孔以暴露所述衬垫的一部分。

公开(公告)号：US07989907B2

公开(公告)日：2011-08-02

申请号：US12580456

申请日：2009-10-16

申请人： Ikuko Inoue

发明人： Ikuko Inoue

IPC分类号： H01L31/0232 ,  H01L31/00

CPC分类号： H01L27/14623 ,  H01L27/1463 ,  H01L27/1464 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a backside-illuminated solid-state image pickup device capable of allowing peripheral circuits to produce stable waveforms and thereby achieving image characteristics with less noise, the device including: a first-conductivity-type semiconductor layer having a first principal surface and a second principal surface opposed to the first principal surface and also having a pixel area and an analog circuit area; a first P type area formed to lie between the second principal surface and the first principal surface in the analog circuit area; a metal layer formed at least partially on the second principal surface of the first P type area; a VSS electrode electrically connected to the metal layer; a photo-conversion area formed in the pixel area and used to accumulate electric charges generated by photoelectric conversion; and a microlens provided on the second principal surface in the pixel area so as to correspond to the photo-conversion area.

摘要翻译： 本发明提供一种能够允许外围电路产生稳定波形从而实现噪声较小的图像特性的背面照明固体摄像装置，该装置包括：具有第一主表面和第二主表面的第一导电型半导体层 主表面与第一主表面相对并且还具有像素区域和模拟电路区域; 第一P型区域，形成为位于模拟电路区域中的第二主表面和第一主表面之间; 至少部分地形成在所述第一P型区域的所述第二主表面上的金属层; 电连接到所述金属层的VSS电极; 形成在像素区域中并用于累积由光电转换产生的电荷的光转换区域; 以及设置在像素区域中的第二主表面上以对应于光转换区域的微透镜。

公开(公告)号：US20100207224A1

公开(公告)日：2010-08-19

申请号：US12629322

申请日：2009-12-02

申请人： Mariko SAITO ,  Ikuko Inoue

发明人： Mariko SAITO ,  Ikuko Inoue

IPC分类号： H01L31/0232

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L31/02002 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024

摘要： A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.

摘要翻译： 固态成像装置包括成像元件，外部端子，绝缘膜，穿透电极，第一绝缘中间层，第一电极和第一接触插塞。 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在面向基板的第一主表面的第二主表面上。 绝缘膜形成在形成在基板中的通孔中。 穿透电极形成在通孔中的绝缘膜上并电连接到外部端子。 第一绝缘中间层形成在基板的第一主表面和穿透电极上。 第一电极形成在第一绝缘中间层上。 第一接触塞形成在穿透电极和第一电极之间的第一绝缘中间层中，以电连接穿透电极和第一电极。

公开(公告)号：US06649948B2

公开(公告)日：2003-11-18

申请号：US10138557

申请日：2002-05-06

申请人： Ikuko Inoue

发明人： Ikuko Inoue

IPC分类号： H01L27146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14656 ,  H01L27/14689

摘要： In a MOS type solid-state image sensor having an image pickup area formed at a semiconductor substrate and comprising a two-dimensional array of row and column unit cells including a photoelectric conversion section and signal scanning circuit, a first p well area is provided in a surface portion of an n type silicon substrate and a second p well area is selectively provided in the surface portion of the first p well area and is higher in p type impurity concentration than the first p well area. In the image pickup area, the photoelectric conversion section is formed in the first p well area and the signal scanning circuit section is formed in the second p well area.

公开(公告)号：US09136291B2

公开(公告)日：2015-09-15

申请号：US13490768

申请日：2012-06-07

申请人： Mariko Saito ,  Ikuko Inoue

发明人： Mariko Saito ,  Ikuko Inoue

IPC分类号： H01L27/146 ,  H01L31/02 ,  H01L21/768 ,  H01L23/48

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L31/02002 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024

摘要： A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.

摘要翻译： 固态成像装置包括成像元件，外部端子，绝缘膜，穿透电极，第一绝缘中间层，第一电极和第一接触插塞。 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在面向基板的第一主表面的第二主表面上。 绝缘膜形成在形成在基板中的通孔中。 穿透电极形成在通孔中的绝缘膜上并电连接到外部端子。 第一绝缘中间层形成在基板的第一主表面和穿透电极上。 第一电极形成在第一绝缘中间层上。 第一接触塞形成在穿透电极和第一电极之间的第一绝缘中间层中，以电连接穿透电极和第一电极。

公开(公告)号：US08476729B2

公开(公告)日：2013-07-02

申请号：US12727564

申请日：2010-03-19

申请人： Ikuko Inoue ,  Kenichiro Hagiwara

发明人： Ikuko Inoue ,  Kenichiro Hagiwara

IPC分类号： H01L31/0232

CPC分类号： H01L27/14618 ,  H01L21/743 ,  H01L23/481 ,  H01L24/13 ,  H01L27/14621 ,  H01L27/14627 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01077 ,  H01L2924/01322 ,  H01L2924/12043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a through-electrode and a first electrode. The imaging element is formed on a first major surface of a semiconductor substrate. The external terminal is formed on a second major surface opposing the first major surface of the semiconductor substrate. The insulating film is formed in a through-hole formed in the semiconductor substrate. The through-electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first electrode is formed on the through-electrode on the first major surface of the semiconductor substrate. When viewed from a direction perpendicular to the first major surface of the semiconductor substrate, an outer shape with which the insulating film and the semiconductor substrate are in contact is larger than an outer shape of the first electrode.

摘要翻译： 固态成像装置包括成像元件，外部端子，绝缘膜，通孔和第一电极。 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在与半导体衬底的第一主表面相对的第二主表面上。 绝缘膜形成在形成在半导体衬底中的通孔中。 贯通电极形成在通孔中的绝缘膜上并与外部端子电连接。 第一电极形成在半导体衬底的第一主表面上的贯通电极上。 当从垂直于半导体衬底的第一主表面的方向观察时，绝缘膜和半导体衬底接触的外形大于第一电极的外形。

公开(公告)号：US07851879B2

公开(公告)日：2010-12-14

申请号：US12248427

申请日：2008-10-09

申请人： Ikuko Inoue

发明人： Ikuko Inoue

IPC分类号： H01L27/146 ,  H01L27/14

CPC分类号： H01L31/02164 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14687

摘要： An imaging device according to an example of the invention comprises a first photoelectric conversion unit which is formed at an imaging area of a substrate, a second photoelectric conversion unit for black reference observation which is formed at an optical black area between the imaging area of the substrate and a peripheral circuit area where a peripheral circuit is formed, an insulating film which is formed on the imaging area and the optical black area of the substrate, and a shielding unit which is formed by connecting a contact and a interconnect in an accumulating direction of the insulating film from the substrate surface to the insulating film surface.

摘要翻译： 根据本发明的示例的成像装置包括形成在基板的成像区域的第一光电转换单元，用于黑色参考观察的第二光电转换单元，其形成在第二光电转换单元的成像区域之间的光学黑色区域 基板和外围电路形成的外围电路区域，形成在基板的成像区域和光学黑色区域上的绝缘膜，以及屏蔽单元，其通过沿着累积方向连接接触和互连而形成 的绝缘膜从基板表面到绝缘膜表面。

公开(公告)号：US06403998B1

公开(公告)日：2002-06-11

申请号：US09435464

申请日：1999-11-08

申请人： Ikuko Inoue

发明人： Ikuko Inoue

IPC分类号： H01L27146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14656 ,  H01L27/14689

摘要： In a MOS type solid-state image sensor having an image pickup area formed at a semiconductor substrate and comprising a two-dimensional array of row and column unit cells including a photoelectric conversion section and signal scanning circuit, a first p well area is provided in a surface portion of an n type silicon substrate and a second p well area is selectively provided in the surface portion of the first p well area and is higher in p type impurity concentration than the first p well area. In the image pickup area, the photoelectric conversion section is formed in the first p well area and the signal scanning circuit section is formed in the second p well area.

摘要翻译： 在具有在半导体基板上形成的摄像区域的MOS型固态图像传感器中，包括具有光电转换部分和信号扫描电路的行和列单元的二维阵列，第一p阱区域设置在 n型硅衬底的表面部分和第二p阱区域选择性地设置在第一p阱区域的表面部分中，并且p型杂质浓度高于第一p阱区域。 在图像拾取区域中，光电转换部分形成在第一p阱区域中，并且信号扫描电路部分形成在第二p阱区域中。

公开(公告)号：US5063449A

公开(公告)日：1991-11-05

申请号：US437260

申请日：1989-11-16

申请人： Hidenori Shibata ,  Ikuko Inoue ,  Nozomu Harada

发明人： Hidenori Shibata ,  Ikuko Inoue ,  Nozomu Harada

IPC分类号： H01L27/148

CPC分类号： H01L27/14831

摘要： A solid-state image sensor comprises signal charge storage diodes formed in a semiconductor substrate, a plurality of signal charge read-out sections formed adjacent to the signal charge storage diodes on the semiconductor substrate, a plurality of signal charge transfer sections formed close to the signal charge read-out sections on the semiconductor substrate, pixel electrodes electrically coupled to the signal charge storage diodes, and a plurality of bias-charge injecting gates and bias-charge injecting diodes, which are provided adjacent to the signal charge transfer sections to inject bias charges into the signal charge storage diodes via the signal charge read-out sections.

摘要翻译： 固态图像传感器包括形成在半导体衬底中的信号电荷存储二极管，与半导体衬底上的信号电荷存储二极管相邻形成的多个信号电荷读出部分，多个信号电荷转移部分， 半导体衬底上的信号电荷读出部分，电耦合到信号电荷存储二极管的像素电极以及多个偏置电荷注入栅极和偏置电荷注入二极管，这些偏置电荷注入栅极和偏置电荷注入二极管邻近于信号电荷转移部分而被注入 通过信号电荷读出部分对信号电荷存储二极管进行偏置电荷。