公开(公告)号：US20110068476A1

公开(公告)日：2011-03-24

申请号：US12875628

申请日：2010-09-03

申请人： Atsuko KAWASAKI ,  Kenichiro Hagiwara ,  Ikuko Inoue ,  Kazutaka Akiyama ,  Itsuko Sakai ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Yoshiteru Koseki ,  Hiroki Neko ,  Koushi Tozuka ,  Kazuhiko Nakadate ,  Takuto Inoue

发明人： Atsuko KAWASAKI ,  Kenichiro Hagiwara ,  Ikuko Inoue ,  Kazutaka Akiyama ,  Itsuko Sakai ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Yoshiteru Koseki ,  Hiroki Neko ,  Koushi Tozuka ,  Kazuhiko Nakadate ,  Takuto Inoue

IPC分类号： H01L23/48 ,  H01L21/762

CPC分类号： H01L27/14683 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L24/13 ,  H01L24/32 ,  H01L27/14618 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12043 ,  H01L2924/3025 ,  H01L2924/00

摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

摘要翻译： 根据一个实施例，公开了一种半导体器件的制造方法。 半导体器件包括具有第一和第二主表面的半导体衬底，以及穿过第一和第二主表面之间的通孔，第一主表面上的焊盘，通孔中的通孔，以及包括 连接部分，以直接连接焊盘和通孔，以及另一个连接部分，以间接连接焊盘和通孔。 该方法包括在第一主表面中形成隔离区，隔离区位于要形成通孔的区域中，并且位于除了形成通孔的区域之外的区域中，形成垫， 以及通过处理所述衬底形成所述通孔以暴露所述衬垫的一部分。

公开(公告)号：US08580652B2

公开(公告)日：2013-11-12

申请号：US12875628

申请日：2010-09-03

申请人： Atsuko Kawasaki ,  Kenichiro Hagiwara ,  Ikuko Inoue ,  Kazutaka Akiyama ,  Itsuko Sakai ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Yoshiteru Koseki ,  Hiroki Neko ,  Koushi Tozuka ,  Kazuhiko Nakadate ,  Takuto Inoue

发明人： Atsuko Kawasaki ,  Kenichiro Hagiwara ,  Ikuko Inoue ,  Kazutaka Akiyama ,  Itsuko Sakai ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Yoshiteru Koseki ,  Hiroki Neko ,  Koushi Tozuka ,  Kazuhiko Nakadate ,  Takuto Inoue

IPC分类号： H01L29/78

CPC分类号： H01L27/14683 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L24/13 ,  H01L24/32 ,  H01L27/14618 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12043 ,  H01L2924/3025 ,  H01L2924/00

摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

摘要翻译： 根据一个实施例，公开了一种半导体器件的制造方法。 半导体器件包括具有第一和第二主表面的半导体衬底，以及穿过第一和第二主表面之间的通孔，第一主表面上的焊盘，通孔中的通孔，以及包括 连接部分，以直接连接焊盘和通孔，以及另一个连接部分，以间接连接焊盘和通孔。 该方法包括在第一主表面中形成隔离区，隔离区位于要形成通孔的区域中，并且位于除了形成通孔的区域之外的区域中，形成垫， 以及通过处理所述衬底形成所述通孔以暴露所述衬垫的一部分。

公开(公告)号：US07808064B2

公开(公告)日：2010-10-05

申请号：US12508293

申请日：2009-07-23

申请人： Atsuko Kawasaki ,  Mie Matsuo ,  Ikuko Inoue ,  Masayuki Ayabe ,  Masahiro Sekiguchi ,  Kazumasa Tanida

发明人： Atsuko Kawasaki ,  Mie Matsuo ,  Ikuko Inoue ,  Masayuki Ayabe ,  Masahiro Sekiguchi ,  Kazumasa Tanida

IPC分类号： H01L31/02

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H04N5/2257

摘要： An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.

摘要翻译： 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在半导体衬底的第二主表面上。 在形成在半导体衬底中的通孔中形成通孔电极。 第一电极焊盘形成在第一主表面中的通孔电极上。 在第一电极焊盘和第一主表面上形成层间绝缘膜。 在层间绝缘膜上形成第二电极焊盘。 在第二电极焊盘和层间绝缘膜上形成钝化膜，并且具有露出第二电极焊盘的一部分的开口。 当在垂直于半导体衬底的表面的方向观察时，在不与开口重叠的区域中，在第一和第二电极焊盘之间形成接触插塞。

公开(公告)号：US20090283847A1

公开(公告)日：2009-11-19

申请号：US12508293

申请日：2009-07-23

申请人： Atsuko KAWASAKI ,  Mie Matsuo ,  Ikuko Inoue ,  Masayuki Ayabe ,  Masahiro Sekiguchi ,  Kazumasa Tanida

发明人： Atsuko KAWASAKI ,  Mie Matsuo ,  Ikuko Inoue ,  Masayuki Ayabe ,  Masahiro Sekiguchi ,  Kazumasa Tanida

IPC分类号： H01L31/02

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H04N5/2257

摘要： An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.

摘要翻译： 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在半导体衬底的第二主表面上。 在形成在半导体衬底中的通孔中形成通孔电极。 第一电极焊盘形成在第一主表面中的通孔电极上。 在第一电极焊盘和第一主表面上形成层间绝缘膜。 在层间绝缘膜上形成第二电极焊盘。 在第二电极焊盘和层间绝缘膜上形成钝化膜，并且具有露出第二电极焊盘的一部分的开口。 当在垂直于半导体衬底的表面的方向观察时，在不与开口重叠的区域中，在第一和第二电极焊盘之间形成接触插塞。

公开(公告)号：US08228426B2

公开(公告)日：2012-07-24

申请号：US12511099

申请日：2009-07-29

申请人： Mie Matsuo ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

发明人： Mie Matsuo ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

IPC分类号： H04N5/225 ,  H01L21/00 ,  H01L31/062

CPC分类号： H04N5/2257 ,  H01L23/481 ,  H01L27/14618 ,  H01L27/14625 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.

摘要翻译： 半导体封装包括固态成像元件，电极焊盘，通孔电极和透光衬底。 固态成像元件形成在半导体衬底的第一主表面上。 电极焊盘形成在半导体衬底的第一主表面上。 通孔电极形成为在第一主表面和与形成在第一主表面上的电极焊盘相对的第二主表面之间延伸穿过半导体衬底。 将透光基板放置在图案化的粘合剂上以在固态成像元件上形成中空。 从透光性基板观察时，半导体衬底在中空部下方的厚度大于粘合剂下方的半导体衬底的厚度。

公开(公告)号：US20090284631A1

公开(公告)日：2009-11-19

申请号：US12511099

申请日：2009-07-29

申请人： Mie MATSUO ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

发明人： Mie MATSUO ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

IPC分类号： H04N5/225 ,  H01L31/0232

CPC分类号： H04N5/2257 ,  H01L23/481 ,  H01L27/14618 ,  H01L27/14625 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.

摘要翻译： 半导体封装包括固态成像元件，电极焊盘，通孔电极和透光衬底。 固态成像元件形成在半导体衬底的第一主表面上。 电极焊盘形成在半导体衬底的第一主表面上。 通孔电极形成为在第一主表面和与形成在第一主表面上的电极焊盘相对的第二主表面之间延伸穿过半导体衬底。 将透光基板放置在图案化的粘合剂上以在固态成像元件上形成中空。 从透光性基板观察时，半导体衬底在中空部下方的厚度大于粘合剂下方的半导体衬底的厚度。

公开(公告)号：US20100025860A1

公开(公告)日：2010-02-04

申请号：US12533492

申请日：2009-07-31

申请人： Kazumasa Tanida ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Chiaki Takubo

发明人： Kazumasa Tanida ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Chiaki Takubo

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01014 ,  H01L2924/01029

摘要： In one aspect of the present invention, a semiconductor device, may include a semiconductor substrate having a first surface and a second surface opposite to the first surface; a through hole in the semiconductor substrate, including an expansion portion which is provided in a vicinity of the first surface so that an opening area of the first opening is greater than an opening area of a lowermost portion of the expansion portion; a first insulating layer on the first surface of the semiconductor substrate; a first wiring layer on the first insulating layer to close the opening of the first insulating layer; a second insulating layer provided on the expansion portion of the through hole; and a second wiring layer on the second insulating layer to extend from inside of the through hole to the second surface of the semiconductor substrate.

摘要翻译： 在本发明的一个方面中，半导体器件可以包括具有第一表面和与第一表面相对的第二表面的半导体衬底; 半导体衬底中的通孔，包括设置在第一表面附近的膨胀部分，使得第一开口的开口面积大于膨胀部分的最下部分的开口面积; 在所述半导体衬底的第一表面上的第一绝缘层; 第一绝缘层上的第一布线层，用于封闭第一绝缘层的开口; 设置在通孔的膨胀部分上的第二绝缘层; 以及在所述第二绝缘层上的从所述通孔的内部延伸到所述半导体衬底的所述第二表面的第二布线层。

公开(公告)号：US08237285B2

公开(公告)日：2012-08-07

申请号：US12533492

申请日：2009-07-31

申请人： Kazumasa Tanida ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Chiaki Takubo

发明人： Kazumasa Tanida ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Chiaki Takubo

IPC分类号： H01L21/70 ,  H01L29/40 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01014 ,  H01L2924/01029

摘要： Semiconductor device includes semiconductor substrate, through hole having first opening and second opening, and including an expansion portion so that an opening area of first opening is greater than an opening area of lowermost portion of expansion portion, first insulating layer, and having an opening which communicates with through hole and has an area smaller than opening area of first opening, first wiring layer provided on first insulating layer, second insulating layer provided on expansion portion of through hole, and to cover first opening and an inner wall surface of through hole, second insulating layer having an opening communicating with opening of first insulating layer so as to expose first wiring layer through opening of first insulating layer, and second wiring layer provided on second insulating layer to extend from inside of through hole, and being connected to first wiring layer via openings of first and second insulating layers.

摘要翻译： 半导体器件包括半导体衬底，具有第一开口和第二开口的通孔，并且包括膨胀部分，使得第一开口的开口面积大于膨胀部分的最下部分的开口面积，第一绝缘层，并且具有开口， 与通孔连通，并且具有小于第一开口的开口面积，设置在第一绝缘层上的第一布线层，设置在通孔的扩展部分上的第二绝缘层，以及覆盖通孔的第一开口和内壁表面的面积， 第二绝缘层，具有与第一绝缘层的开口连通的开口，以便通过第一绝缘层的开口露出第一布线层;以及第二布线层，设置在第二绝缘层上以从通孔的内部延伸，并且连接到第一布线 层通过第一和第二绝缘层的开口。

公开(公告)号：US20110241180A1

公开(公告)日：2011-10-06

申请号：US13164099

申请日：2011-06-20

申请人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

发明人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

IPC分类号： H01L23/48 ,  H01L21/66

CPC分类号： H01L27/14687 ,  H01L21/561 ,  H01L21/568 ,  H01L23/481 ,  H01L23/544 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2223/54493 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

摘要翻译： 一种制造半导体器件的方法，包括：制备具有第一凹槽的半导体衬底; 制备具有第二凹口的支撑衬底; 将半导体衬底与支撑衬底层压，使得第一凹口可以与第二凹口匹配; 以及处理半导体衬底的与面向支撑衬底的第一主表面相对的第二主表面，以将半导体衬底的厚度减小到预定厚度。

公开(公告)号：US07993974B2

公开(公告)日：2011-08-09

申请号：US12236567

申请日：2008-09-24

申请人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

发明人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

IPC分类号： H01L21/30

CPC分类号： H01L27/14687 ,  H01L21/561 ,  H01L21/568 ,  H01L23/481 ,  H01L23/544 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2223/54493 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

摘要翻译： 一种制造半导体器件的方法，包括：制备具有第一凹槽的半导体衬底; 制备具有第二凹口的支撑衬底; 将半导体衬底与支撑衬底层压，使得第一凹口可以与第二凹口匹配; 以及处理半导体衬底的与面向支撑衬底的第一主表面相对的第二主表面，以将半导体衬底的厚度减小到预定厚度。