公开(公告)号：US11552172B2

公开(公告)日：2023-01-10

申请号：US16926695

申请日：2020-07-11

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Romain Esteve ,  Moriz Jelinek ,  Anton Mauder ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/40 ,  H01L29/08 ,  H01L21/04 ,  H01L29/872 ,  H01L29/739 ,  H01L29/04

Abstract: First dopants are implanted through a larger opening of a first process mask into a silicon carbide body, wherein the larger opening exposes a first surface section of the silicon carbide body. A trench is formed in the silicon carbide body in a second surface section exposed by a smaller opening in a second process mask. The second surface section is a sub-section of the first surface section. The larger opening and the smaller opening are formed self-aligned to each other. At least part of the implanted first dopants form at least one compensation layer portion extending parallel to a trench sidewall.

公开(公告)号：US20220406600A1

公开(公告)日：2022-12-22

申请号：US17837690

申请日：2022-06-10

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Thomas Waechtler ,  Bernd Bitnar ,  Daniel Schloegl ,  Hans-Joachim Schulze ,  Oana Julia Spulber ,  Benedikt Stoib ,  Christian Krueger

IPC: H01L21/22 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/32 ,  H01L29/739 ,  H01L21/265 ,  H01L29/66

Abstract: A semiconductor device includes: an n-doped drift region between first and second surfaces of a semiconductor body; a p-doped first region at the second surface; and an n-doped field stop region between the drift and first region. The field stop region includes first and second sub-regions with hydrogen related donors. A p-n junction separates the first region and first sub-region. A concentration of the hydrogen related donors, along a first vertical extent of the first sub-region, steadily increases from the pn-junction to a maximum value, and steadily decreases from the maximum value to a reference value at a first transition between the sub-regions. A second vertical extent of the second sub-region ends at a second transition to the drift region where the concentration of hydrogen related donors equals 10% of the reference value. A maximum concentration value in the second sub-region is at most 20% larger than the reference value.

公开(公告)号：US11264459B2

公开(公告)日：2022-03-01

申请号：US16712120

申请日：2019-12-12

Applicant: Infineon Technologies AG

Inventor： Roman Baburske ,  Moriz Jelinek ,  Franz-Josef Niedernostheide ,  Frank Dieter Pfirsch ,  Christian Philipp Sandow ,  Hans-Joachim Schulze

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L21/265 ,  H01L21/324 ,  H01L29/739

Abstract: A power semiconductor device includes a semiconductor body having front and back sides. The semiconductor body includes drift, field stop and emitter adjustment regions each of a first conductivity type. The field stop region is arranged between the drift region and the backside and has dopants of the first conductivity type at a higher dopant concentration than the drift region. The emitter adjustment region is arranged between the field stop region and the backside and has dopants of the first conductivity type at a higher dopant concentration than the field stop region. The semiconductor body has a concentration of interstitial oxygen of at least 1E17 cm−3. The field stop region includes a region where the dopant concentration is higher than that in the drift region at least by a factor of three. At least 20% of the dopants of the first conductivity type in the region are oxygen-induced thermal donors.

公开(公告)号：US11018252B2

公开(公告)日：2021-05-25

申请号：US16578990

申请日：2019-09-23

Applicant: Infineon Technologies AG

Inventor： Hans Peter Felsl ,  Moriz Jelinek ,  Volodymyr Komarnitskyy ,  Konrad Schraml ,  Hans-Joachim Schulze

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/739

Abstract: A power semiconductor transistor includes a semiconductor body having a front side and a backside with a backside surface. The semiconductor body includes a drift region of a first conductivity type and a field stop region of the first conductivity type. The field stop region is arranged between the drift region and the backside and includes, in a cross-section along a vertical direction from the backside to the front side, a concentration profile of donors of the first conductivity type that has: a first local maximum at a first distance from the backside surface, a front width at half maximum associated with the first local maximum, and a back width at half maximum associated with the first local maximum. The front width at half maximum is smaller than the back width at half maximum and amounts to at least 8% of the first distance.

公开(公告)号：US20190066977A1

公开(公告)日：2019-02-28

申请号：US16112178

申请日：2018-08-24

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Michael Brugger ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Peter Zupan

IPC: H01J37/317 ,  H01J37/304 ,  H01L21/04 ,  H01L29/16

Abstract: An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.

公开(公告)号：US20190051488A1

公开(公告)日：2019-02-14

申请号：US16057014

申请日：2018-08-07

Applicant: Infineon Technologies AG

Inventor： Werner Schustereder ,  Moriz Jelinek ,  Hans-Joachim Schulze

IPC: H01J37/20 ,  H01J37/317 ,  H01J37/147 ,  H01L21/265 ,  H01L21/04 ,  H01L21/266 ,  H01L21/225 ,  C23C14/48 ,  C23C14/04 ,  C23C14/54

Abstract: An implantation apparatus includes a scanning assembly that effects a relative movement between an ion beam and a semiconductor substrate along a first scan direction and along a second scan direction orthogonal to the first scan direction. A tilt assembly changes a tilt angle θ between a beam axis of the ion beam and a normal to a main surface of the semiconductor substrate from a first tilt angle θ1 to a second tilt angle θ2, wherein an angular span Δθ between the first tilt angle θ1 and the second tilt angle θ2 is at least 5°. A control unit controls the tilt assembly to continuously change the tilt angle θ during the relative movement between the ion beam and the semiconductor substrate.

公开(公告)号：US10037887B2

公开(公告)日：2018-07-31

申请号：US15435034

申请日：2017-02-16

Applicant: Infineon Technologies AG

Inventor： Michael Brugger ,  Moriz Jelinek ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/66 ,  H01L21/265

CPC classification number: H01L21/26586 ,  H01L22/12 ,  H01L22/20

Abstract: A method for implanting ions into a semiconductor substrate includes performing a test implantation of ions into a semiconductor substrate. The ions of the test implantation are implanted with a first implantation angle range over the semiconductor substrate. Further, the method includes determining an implantation angle offset based on the semiconductor substrate after the test implantation and adjusting a tilt angle of the semiconductor substrate with respect to an implantation direction based on the determined implantation angle offset. Additionally, the method includes performing at least one target implantation of ions into the semiconductor substrate after the adjustment of the tilt angle. The ions of the at least one target implantation are implanted with a second implantation angle range over the semiconductor substrate. Further, the first implantation angle range is larger than the second implantation angle range.

公开(公告)号：US09634086B2

公开(公告)日：2017-04-25

申请号：US14952337

申请日：2015-11-25

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/265 ,  C30B31/22 ,  H01L29/06 ,  H01L21/66 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L21/324

CPC classification number: H01L29/0634 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/3242 ,  H01L22/14 ,  H01L22/20 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/407 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7813

Abstract: A first doped region is formed in a single crystalline semiconductor substrate. Light ions are implanted through a process surface into the semiconductor substrate to generate crystal lattice vacancies between the first doped region and the process surface, wherein a main beam axis of an implant beam used for implanting the light ions deviates by at most 1.5 degree from a main crystal direction along which channeling of the light ions occurs. A second doped region with a conductivity type opposite to the first doped region is formed based on the crystal lattice vacancies and hydrogen atoms.

公开(公告)号：US20160372329A1

公开(公告)日：2016-12-22

申请号：US15178039

申请日：2016-06-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Naveen Goud Ganagona ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/265 ,  H01L29/10 ,  H01L21/66 ,  H01L29/66 ,  H01L29/167

CPC classification number: H01L29/1095 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/3242 ,  H01L21/67248 ,  H01L22/26 ,  H01L29/0878 ,  H01L29/167 ,  H01L29/32 ,  H01L29/6609 ,  H01L29/66333 ,  H01L29/66666 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/861

Abstract: A method for forming a semiconductor device includes implanting a predefined dose of protons into a semiconductor substrate. Further, the method comprises controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the predefined dose of protons. The target temperature range reaches from a lower target temperature limit to an upper target temperature limit. Further, the lower target temperature limit is equal to a target temperature minus 30° C. and the upper target temperature limit is equal to the target temperature plus 30° C. and the target temperature is higher than 80° C.

Abstract translation: 一种用于形成半导体器件的方法包括将预定剂量的质子注入到半导体衬底中。 此外，该方法包括在注入预定剂量的质子期间控制半导体衬底的温度，使得半导体衬底的温度在用于植入预定义的植入处理时间的植入物处理时间的70％以上在目标温度范围内 质子剂量。 目标温度范围从较低的目标温度限制到达目标温度上限。 此外，较低的目标温度限制等于目标温度减去30℃，上限温度等于目标温度加30℃，目标温度高于80℃。

公开(公告)号：US20160141399A1

公开(公告)日：2016-05-19

申请号：US14935830

申请日：2015-11-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Schustereder

IPC: H01L29/739 ,  H01L21/66 ,  H01L21/265 ,  H01L21/324 ,  H01L29/36 ,  H01L29/10

CPC classification number: H01L29/7395 ,  H01L21/263 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7397

Abstract: A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.

Abstract translation: 一种用于形成半导体器件的方法包括将限定剂量的质子注入到半导体衬底中并根据定义的温度曲线回火半导体衬底。 取决于指示关于半导体衬底的至少一部分内的碳浓度的信息的碳相关参数来选择限定剂量的质子和限定的温度分布中的至少一个。