公开(公告)号：US20180046086A1

公开(公告)日：2018-02-15

申请号：US15674934

申请日：2017-08-11

Applicant: Inpria Corporation

Inventor： Mollie Waller ,  Brian J. Cardineau ,  Kai Jiang ,  Alan J. Telecky ,  Stephen T. Meyers ,  Benjamin L. Clark

IPC: G03F7/42 ,  H01L21/67 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/004

CPC classification number: G03F7/422 ,  G03F7/0042 ,  G03F7/162 ,  G03F7/168 ,  H01L21/02087 ,  H01L21/0273 ,  H01L21/67051

Abstract: Methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

公开(公告)号：US20170102612A1

公开(公告)日：2017-04-13

申请号：US15291738

申请日：2016-10-12

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph Burton Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/004 ,  C09D7/12 ,  G03F7/40 ,  G03F7/32 ,  G03F7/20 ,  G03F7/16

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/325 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US09310684B2

公开(公告)日：2016-04-12

申请号：US13973098

申请日：2013-08-22

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Douglas A. Keszler ,  Kai Jiang ,  Jeremy Anderson ,  Andrew Grenville

IPC: G03F7/004 ,  G03F7/09 ,  G03F7/20 ,  G03F7/30

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/09 ,  G03F7/20 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/30 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

Abstract translation: 已经发现有机金属溶液使用薄涂层提供高分辨率的基于辐射的图案化。 图案化可以包括用选定图案照射涂覆表面，并用显影剂显影图案以形成显影图像。 基于使用有机显影剂或酸性或碱性显影剂水溶液，可图案化涂层可能对正色调图案化或负色调图案敏感。 辐射敏感性涂层可以包含具有有机配体的金属氧代/羟基网络。 前体溶液可以包含具有金属碳键和/或金属羧酸盐键的有机配体的有机液体和金属多核氧代 - 羟基阳离子。

公开(公告)号：US20250011346A1

公开(公告)日：2025-01-09

申请号：US18895654

申请日：2024-09-25

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  Stephen T. Meyers ,  Kai Jiang ,  William Earley ,  Jeremy T. Anderson

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: Organotin clusters are described with the formula R3Sn3(O2CR′)5−x(OH)2+x(μ3-O) with 0≤x

公开(公告)号：US12189286B2

公开(公告)日：2025-01-07

申请号：US17903672

申请日：2022-09-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Douglas A. Keszler ,  Kai Jiang ,  Jeremy T. Anderson ,  Andrew Grenville

IPC: G03F7/004 ,  G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32

Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

公开(公告)号：US20240427237A1

公开(公告)日：2024-12-26

申请号：US18823620

申请日：2024-09-03

Applicant: Inpria Corporation

Inventor： Kai Jiang ,  Stephen T. Meyers ,  Lauren B. McQuade ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Benjamin L. Clark ,  Dominick Smiddy ,  Margaret Wilson-Moses

IPC: G03F7/004 ,  B05D1/00 ,  C08G79/12 ,  G03F7/16 ,  G03F7/20

Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.

公开(公告)号：US11988960B2

公开(公告)日：2024-05-21

申请号：US17903369

申请日：2022-09-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Douglas A. Keszler ,  Kai Jiang ,  Jeremy T. Anderson ,  Andrew Grenville

IPC: G03F7/004 ,  G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/09 ,  G03F7/20 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/30 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

公开(公告)号：US11868046B2

公开(公告)日：2024-01-09

申请号：US17689135

申请日：2022-03-08

Applicant: Inpria Corporation

Inventor： Kai Jiang ,  Stephen T. Meyers ,  Lauren B. McQuade ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Benjamin L Clark ,  Dominick Smiddy ,  Margaret Wilson-Moses

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/16 ,  B05D1/00

CPC classification number: G03F7/0043 ,  B05D1/005 ,  G03F7/168 ,  G03F7/20

Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.

公开(公告)号：US11754924B2

公开(公告)日：2023-09-12

申请号：US17858129

申请日：2022-07-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/38 ,  C23C16/40 ,  C23C14/08 ,  C23C16/455 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

CPC classification number: G03F7/168 ,  C23C14/086 ,  C23C16/407 ,  C23C16/45523 ,  C23C16/45561 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US11740559B2

公开(公告)日：2023-08-29

申请号：US17498437

申请日：2021-10-11

Applicant: Inpria Corporation

Inventor： Mollie Waller ,  Brian J. Cardineau ,  Kai Jiang ,  Alan J. Telecky ,  Stephen T. Meyers ,  Benjamin L. Clark

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/67 ,  G03F7/42 ,  G03F7/16 ,  G03F7/004

CPC classification number: G03F7/422 ,  G03F7/0042 ,  G03F7/162 ,  G03F7/168 ,  H01L21/0273 ,  H01L21/02087 ,  H01L21/67051

Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.