公开(公告)号：US20210151536A1

公开(公告)日：2021-05-20

申请号：US17161709

申请日：2021-01-29

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI

IPC: H01L27/32 ,  H01L29/786

Abstract: Each of the plurality of thin film transistors is of a bottom gate type and including: a gate electrode; a gate insulating film covering the gate electrode; an oxide semiconductor layer on the gate insulating film; a silicon oxide in contact with a first upper surface region of the oxide semiconductor layer; a silicon nitride in contact with a second upper surface region of the oxide semiconductor layer; and a source electrode and a drain electrode above the gate insulating film. The second upper surface region is adjacent to each of both sides of the first upper surface region in a direction between the source electrode and the drain electrode. The oxide semiconductor layer includes a semiconductor portion directly below the silicon oxide and a conductive portion directly below the silicon nitride.

公开(公告)号：US20190067334A1

公开(公告)日：2019-02-28

申请号：US16051532

申请日：2018-08-01

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI

IPC: H01L27/12 ,  G09G3/36 ,  G02F1/1343

Abstract: The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TFT having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TFT.

公开(公告)号：US20180308869A1

公开(公告)日：2018-10-25

申请号：US16011725

申请日：2018-06-19

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Kazufumi WATABE ,  Yoshinori ISHII ,  Hidekazu MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/10 ,  G02F2202/104 ,  H01L27/1251 ,  H01L27/1259 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US20180026138A1

公开(公告)日：2018-01-25

申请号：US15649126

申请日：2017-07-13

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Kazufumi Watabe ,  Tomoyuki Ariyoshi ,  Osamu Karikome ,  Ryohei Takaya

IPC: H01L29/786 ,  H01L29/40 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US20160211177A1

公开(公告)日：2016-07-21

申请号：US14996323

申请日：2016-01-15

Applicant: Japan Display Inc.

Inventor： lsao SUZUMURA ,  Arichika ISHIDA ,  Hidekazu MIYAKE ,  Hiroto MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L21/768 ,  H01L29/66 ,  H01L29/417 ,  H01L21/02

CPC classification number: H01L21/76895 ,  H01L21/022 ,  H01L21/32136 ,  H01L21/465 ,  H01L21/78 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

Abstract: According to one embodiment, a method of manufacturing a thin-film transistor includes forming a semiconductor layer on a gate electrode with an insulating layer 12 being interposed, forming interconnect formation layers on the semiconductor layer, forming a plurality of interconnects and electrodes by patterning the interconnect formation layers through etching, patterning the semiconductor layer in an island shape through etching after forming the electrodes, exposing a channel region of the semiconductor layer by etching a part of the electrodes on the semiconductor layer, and forming a protective layer so as to overlap the interconnects, the electrodes and the semiconductor layer having the island shape.

Abstract translation: 根据一个实施例，制造薄膜晶体管的方法包括在绝缘层12插入的栅电极上形成半导体层，在半导体层上形成互连形成层，通过图案化形成多个互连和电极 通过蚀刻进行互连形成层，在形成电极之后通过蚀刻将半导体层图案化为岛状，通过蚀刻半导体层上的一部分电极来暴露半导体层的沟道区域，并形成保护层以重叠 互连，电极和具有岛状的半导体层。