公开(公告)号：US06888703B2

公开(公告)日：2005-05-03

申请号：US09953539

申请日：2001-09-17

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

摘要翻译： 提供基于纳米氧化物的电流 - 垂直平面（CPP）磁阻（MR）传感器堆叠，以及用于形成这种堆叠的方法。 相对于完全由金属层制成的CPP叠层，这种堆叠具有增加的电阻和增强的磁阻特性。 通过在铁磁层和非磁性间隔层之间插入磁性纳米氧化物层来提供所述增强的性质，由此所述纳米氧化物层增加电阻并显示自旋过滤性质。 提供了各种类型的CPP传感器堆叠，其中都具有形成在其中的纳米氧化物层，包括自旋阀型和合成反铁磁性钉扎层型旋转阀型。 所述堆叠也可以彼此形成以提供不同类型的叠层。

公开(公告)号：US20070041124A1

公开(公告)日：2007-02-22

申请号：US11588564

申请日：2006-10-27

申请人： Jei-Wei Chang ,  Koichi Terunuma ,  Youfeng Zheng ,  Kochan Ju

发明人： Jei-Wei Chang ,  Koichi Terunuma ,  Youfeng Zheng ,  Kochan Ju

IPC分类号： G11B5/09

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.

摘要翻译： 通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过 其中心区域，从而最小化其边缘读取灵敏度。

公开(公告)号：US07118680B2

公开(公告)日：2006-10-10

申请号：US10718372

申请日：2003-11-20

申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

IPC分类号： G11B5/39

CPC分类号： G11B5/1278 ,  Y10T29/49052

摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。

公开(公告)号：US07111386B2

公开(公告)日：2006-09-26

申请号：US11266418

申请日：2005-11-03

申请人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

发明人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49128

摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

公开(公告)号：US20060048375A1

公开(公告)日：2006-03-09

申请号：US11266418

申请日：2005-11-03

申请人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

发明人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

IPC分类号： G11B5/127 ,  H04R31/00 ,  C25D5/02

CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49128

摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

公开(公告)号：US06447689B1

公开(公告)日：2002-09-10

申请号：US09584424

申请日：2000-06-05

申请人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

发明人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  H01F41/308

摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer is in place at the time that photoresist (used to define the location of the spin valve relative to the buried leads and longitudinal bias layers) is removed. The protective layer is later removed as a natural byproduct of surface cleanup just prior to the formation of the spin valve itself.

摘要翻译： 公开了一种制造具有埋地引线的自旋阀结构的改进方法。 一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。 该保护层在光刻胶（用于限定自旋阀相对于埋入引线和纵向偏置层的位置）被去除时就位。 在形成自旋阀本身之前，保护层随后被除去，作为表面清洁的天然副产物。

公开(公告)号：US06428714B1

公开(公告)日：2002-08-06

申请号：US09584426

申请日：2000-06-05

申请人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

发明人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F41/308

摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer remains in place while the buried leads as well as longitudinal bias means are formed. Processing includes use of photoresist liftoff. The protective layer is removed as a natural byproduct of surface cleanup just prior the formation of the spin valve.

摘要翻译： 公开了一种制造具有埋地引线的自旋阀结构的改进方法。 一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。 该保护层保持原位，同时形成埋入引线以及纵向偏置装置。 处理包括使用光致抗蚀剂剥离。 在形成自旋阀之前，保护层作为表面清洁的天然副产物被去除。

公开(公告)号：US06218080B1

公开(公告)日：2001-04-17

申请号：US09519610

申请日：2000-03-06

申请人： Xuehua Wu ,  Kochan Ju ,  Jei-Wei Chang

发明人： Xuehua Wu ,  Kochan Ju ,  Jei-Wei Chang

IPC分类号： G11B523

CPC分类号： C25D1/10 ,  G11B5/232 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49032

摘要： It has been observed that plated structures grown inside molds for small objects, such as a gap structure in a magnetic read head, often have curved rather than planar surfaces. This problem has been overcome as follows. Prior to laying down photoresist for the mold, a layer of copper is deposited on the substrate on which the head structure is to be grown (normally the shared pole). After the photoresist is patterned to form the mold, all exposed copper is selectively removed from the substrate a key feature being that the copper is over-etched so that some undercutting of the photoresist occurs. Then, when the layers making up the gap structure are electrodeposited inside the mold they grow away from the substrate as planar surfaces.

摘要翻译： 已经观察到，用于小物体的模具内生长的电镀结构，例如磁读头中的间隙结构，通常具有弯曲而不是平面。 这个问题已被克服如下。 在为模具铺设光致抗蚀剂之前，在要在其上生长头部结构的基底（通常是共享极）上沉积一层铜。 在光致抗蚀剂被图案化以形成模具之后，从衬底中选择性地去除所有暴露的铜，其关键特征是铜被过度蚀刻，使得发生光刻胶的一些底切。 然后，当构成间隙结构的层电沉积在模具内部时，它们作为平面表面从衬底生长。

公开(公告)号：US07675718B2

公开(公告)日：2010-03-09

申请号：US11588564

申请日：2006-10-27

申请人： Jei-Wei Chang ,  Koichi Terunuma ,  Youfeng Zheng ,  Kochan Ju

发明人： Jei-Wei Chang ,  Koichi Terunuma ,  Youfeng Zheng ,  Kochan Ju

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.

摘要翻译： 通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过 其中心区域，从而最小化其边缘读取灵敏度。

公开(公告)号：US07453720B2

公开(公告)日：2008-11-18

申请号：US11138609

申请日：2005-05-26

申请人： Kochan Ju ,  Jei-Wei Chang

发明人： Kochan Ju ,  Jei-Wei Chang

IPC分类号： G11C11/02

CPC分类号： H01L27/222 ,  G11C11/15 ,  G11C11/5607 ,  H01L27/228

摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each stack is located at an intersection region between the two orthogonal write lines. The cells are stacked in pairs, with the cells in each pair having their easy axes of magnetization aligned substantially parallel to one another and nonparallel with the X and Y axes. The cells in each pair have their free layers magnetically biased in opposite directions. Because the free layer of each cell in a pair is biased in a direction opposite to the bias direction of the free layer of the other cell, one cell in a pair can be toggle written without toggle writing the other cell in the pair. The bias fields on the free layers reduces the required switching field for each cell, which results in less write current and a lower-power toggling MRAM.

摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。 每个堆栈位于两个正交写入线之间的交叉区域。 电池成对堆叠，每对中的电池具有易于相互平行的磁化轴，并且与X轴和Y轴不平行。 每对中的电池具有以相反方向磁偏置的自由层。 因为一对中的每个单元的自由层在与另一个单元的自由层的偏置方向相反的方向上被偏置，所以一对单元可以被切换而不用切换写入该对中的另一个单元。 自由层上的偏置场减少了每个单元所需的切换场，这导致较少的写入电流和较低功率的切换MRAM。