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    Method for fabricating a semiconductor capacitor
    41.
    发明授权
    Method for fabricating a semiconductor capacitor 有权
    半导体电容器的制造方法

    公开(公告)号：US06337173B2

    公开(公告)日：2002-01-08

    申请号：US09208452

    申请日：1998-12-10

    Applicant: Tean-Sen Jen ,  Shiou-Yu Wang ,  Jia-Shyong Cheng

    Inventor： Tean-Sen Jen ,  Shiou-Yu Wang ,  Jia-Shyong Cheng

    IPC: G03F726

    CPC classification number: H01L28/92 ,  H01L21/76213 ,  H01L27/10852

    Abstract: A method for fabricating a capacitor electrode on a semiconductor substrate includes the steps of: forming a conducting layer over the semiconductor substrate; forming a photoresist layer over the conducting layer; pattering the photoresist layer through an interfering exposure step; and pattering the conducting layer using the patterned photoresist layer as a mask, thereby forming a capacitor electrode.

    Abstract translation: 一种在半导体衬底上制造电容器电极的方法包括以下步骤：在半导体衬底上形成导电层; 在所述导电层上形成光致抗蚀剂层; 通过干涉曝光步骤图案化光致抗蚀剂层; 并使用图案化的光致抗蚀剂层作为掩模图案化导电层，从而形成电容器电极。

    Method of fabricating rugged capacitor of high density DRAMs
    42.
    发明授权
    Method of fabricating rugged capacitor of high density DRAMs 失效
    制造高密度DRAM耐久电容器的方法

    公开(公告)号：US5923989A

    公开(公告)日：1999-07-13

    申请号：US81598

    申请日：1998-05-20

    Applicant: Shian-Jyh Lin ,  Tsu-An Lin ,  Wen-Chieh Chang ,  Shiou-Yu Wang ,  Tean-Sen Jen ,  Hui-Jen Yang ,  Jia-Shyong Cheng ,  Ming-Teng Hsieh

    Inventor： Shian-Jyh Lin ,  Tsu-An Lin ,  Wen-Chieh Chang ,  Shiou-Yu Wang ,  Tean-Sen Jen ,  Hui-Jen Yang ,  Jia-Shyong Cheng ,  Ming-Teng Hsieh

    IPC: H01L21/02 ,  H01L21/8242

    CPC classification number: H01L27/10852 ,  H01L28/84

    Abstract: A method of fabricating a rugged capacitor structure of high density Dynamic Random Access Memory (DRAM) cells is disclosed. First, MOSFETs, wordlines and bitlines are formed on a semiconductor silicon substrate. Next, a dielectric layer and a doped polysilicon layer are sequentially deposited over the entire silicon substrate. The dielectric layer and doped polysilicon layer are then partially etched to open source contact windows. Then, a polysilicon layer is deposited overlaying the doped polysilicon layer and filling into the source contact windows. Next, the polysilicon layer and doped polysilicon layers are partially etched to define bottom electrodes of the capacitors. Next, tilt angle implantation is performed to implant impurities into top surface and four sidewalls of the polysilicon layer and doped polysilicon layer. Next, a rugged polysilicon layer is deposited overlaying the polysilicon, doped polysilicon and third dielectric layers. Next, the polysilicon layer is anisotropically etched by using the rugged polysilicon layer as an etching mask to transfer rugged surface profile from the rugged polysilicon layer to the polysilicon layer. Finally, an interelectrode dielectric layer and a third polysilicon layer as top electrodes of the capacitors are sequentially formed to complete the rugged capacitor for high density DRAM applications.

    Abstract translation: 公开了一种制造高密度动态随机存取存储器（DRAM）单元的坚固电容器结构的方法。 首先，在半导体硅衬底上形成MOSFET，字线和位线。 接下来，在整个硅衬底上依次沉积介电层和掺杂多晶硅层。 然后将电介质层和掺杂多晶硅层部分地蚀刻到开源接触窗口。 然后，沉积覆盖掺杂多晶硅层并填充到源极接触窗口中的多晶硅层。 接下来，部分蚀刻多晶硅层和掺杂多晶硅层以限定电容器的底部电极。 接下来，进行倾斜角注入以将杂质植入多晶硅层的顶表面和四个侧壁以及掺杂多晶硅层。 接下来，沉积覆盖多晶硅，掺杂多晶硅和第三介电层的坚固的多晶硅层。 接下来，通过使用坚固的多晶硅层作为蚀刻掩模来将多晶硅层各向异性地蚀刻，以将粗糙的表面轮廓从坚固的多晶硅层转移到多晶硅层。 最后，依次形成作为电容器顶电极的电极间电介质层和第三多晶硅层，以完成用于高密度DRAM应用的坚固电容器。

    Black matrix for liquid crystal display
    43.
    发明授权
    Black matrix for liquid crystal display 失效
    黑色矩阵用于液晶显示

    公开(公告)号：US5721599A

    公开(公告)日：1998-02-24

    申请号：US586535

    申请日：1996-01-16

    Applicant: Jia-Shyong Cheng

    Inventor： Jia-Shyong Cheng

    IPC: G02F1/1335 ,  G02F1/1343

    CPC classification number: G02F1/133512 ,  G02F1/134309 ,  G02F2001/133519

    Abstract: The electric circuit of a Liquid Crystal Display normally includes a common electrode comprising a material such as indium-tin-oxide that has high resistivity and hence high series resistance. Said series resistance is significantly reduced by the design taught in the present invention wherein an electrically conductive black matrix is located so as to be in contact with the common electrode. Additionally, said design reduces the level of light reflected back in the direction of viewing, thereby improving the contrast level of the display.

    Abstract translation: 液晶显示器的电路通常包括具有高电阻率和因此高串联电阻的诸如铟锡氧化物的材料的公共电极。 所述串联电阻通过本发明所述的设计显着减少，其中导电黑色矩阵被定位成与公共电极接触。 另外，所述设计减少了在观看方向上反射的光的水平，从而提高了显示器的对比度。

    Method for making touch panel
    44.
    发明授权
    Method for making touch panel 有权
    制作触摸屏的方法

    公开(公告)号：US08883248B2

    公开(公告)日：2014-11-11

    申请号：US13339681

    申请日：2011-12-29

    Applicant: Jia-Shyong Cheng ,  Hung-Yi Hung ,  Jeah-Sheng Wu

    Inventor： Jia-Shyong Cheng ,  Hung-Yi Hung ,  Jeah-Sheng Wu

    IPC: B29C65/00 ,  G06F3/041

    CPC classification number: G06F3/041 ,  G06F2203/04103

    Abstract: The present disclosure relates to a method for making a touch panel. The method includes following steps. A substrate is provided, wherein the substrate has a surface and defines two areas: a touch-view area and a trace area; applying an adhesive layer on the surface of the substrate. A carbon nanotube film is placed on a surface of the adhesive layer. The adhesive layer is solidified. An electrode and a conductive trace are formed on a surface of the carbon nanotube film so that part of the carbon nanotube film on the trace area is exposed from space between adjacent conductive lines of the conductive trace to form an exposed carbon nanotube film. The exposed carbon nanotube film is removed.

    Abstract translation: 本公开涉及一种制造触摸面板的方法。 该方法包括以下步骤。 提供了一种衬底，其中衬底具有表面并且限定两个区域：触摸视区域和迹线区域; 在基材的表面上施加粘合剂层。 将碳纳米管膜放置在粘合剂层的表面上。 粘合层固化。 在碳纳米管膜的表面上形成电极和导电迹线，使得痕量区域上的碳纳米管膜的一部分从导电迹线的相邻导电线之间的空间露出，形成暴露的碳纳米管膜。 去除暴露的碳纳米管膜。

    Electronic paper display device
    48.
    发明授权
    Electronic paper display device 有权
    电子纸显示装置

    公开(公告)号：US08599471B2

    公开(公告)日：2013-12-03

    申请号：US13337302

    申请日：2011-12-27

    Applicant: Po-Sheng Shih ,  Jia-Shyong Cheng ,  Po-Yang Chen

    Inventor： Po-Sheng Shih ,  Jia-Shyong Cheng ,  Po-Yang Chen

    IPC: G02B26/00

    CPC classification number: G06F3/044 ,  B82Y15/00 ,  G02F1/13338 ,  G02F1/167

    Abstract: An electronic paper display device includes an electronic paper display panel, and a functional layer. The electronic paper display panel includes a common electrode layer and a display surface. The functional layer is located on the display surface and includes a carbon nanotube touching functional layer. A distance between the common electrode layer and the carbon nanotube touching functional layer is above 100 microns and equal to or less than 2 millimeters.

    Abstract translation: 电子纸显示装置包括电子纸显示面板和功能层。 电子纸显示面板包括公共电极层和显示面。 功能层位于显示面上，具有碳纳米管触摸功能层。 公共电极层和碳纳米管接触功能层之间的距离在100微米以上且等于或小于2毫米。

    Method for making patterned conductive element
    49.
    发明授权
    Method for making patterned conductive element 有权
    图案化导电元件的制造方法

    公开(公告)号：US08454787B2

    公开(公告)日：2013-06-04

    申请号：US13339700

    申请日：2011-12-29

    Applicant: Po-Sheng Shih ,  Jia-Shyong Cheng

    Inventor： Po-Sheng Shih ,  Jia-Shyong Cheng

    IPC: B29C65/52 ,  B32B37/12 ,  B32B37/24 ,  B32B37/30 ,  B32B38/10

    CPC classification number: B82Y30/00

    Abstract: A method for making a patterned conductive element includes following steps. A substrate is provided. A patterned adhesive layer is applied on a surface of the substrate. A carbon nanotube layer is placed on a surface of the patterned adhesive layer. The patterned adhesive layer is solidified to obtain a fixed part of the carbon nanotube layer and a non-fixed part of carbon nanotube layer. The non-fixed part of carbon nanotube layer is removed.

    Abstract translation: 制造图案化导电元件的方法包括以下步骤。 提供基板。 将图案化的粘合剂层施加在基材的表面上。 将碳纳米管层放置在图案化的粘合剂层的表面上。 图案化的粘合剂层被固化以获得碳纳米管层的固定部分和碳纳米管层的非固定部分。 除去碳纳米管层的非固定部分。

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