摘要:
The present invention provides methods and apparatus for a pre-CMP semiconductor substrate buffing module. The invention includes a polishing pad assembly adapted to be rotated against a major surface of a substrate; a chuck adapted to hold the substrate and to rotate the substrate against the polishing pad assembly as the polishing pad assembly is rotated; and a lateral motion motor adapted to oscillate the polishing pad assembly laterally across the major surface of the substrate while the polishing pad assembly is rotated against the rotating substrate. Numerous additional features are disclosed.
摘要:
The present invention is directed to an electrophoretic display comprising: (a) microcups comprising partition walls and top-openings; (b) an organic-based electrophoretic fluid filled in the microcups, wherein said fluid comprises charged pigment particles dispersed in a solvent; and (c) a top-sealing layer formed from a sealing composition to enclose the electrophoretic fluid within the microcups. The sealing composition comprises: (i) a water soluble polymer, (ii) a water-based suspension, a water-based dispersion, a water-based emulsion, or a water-based latex, each comprising a polymer; and (iii) water.
摘要:
According to an embodiment, an electro-optic polymer comprises a host polymer and a guest nonlinear optical chromophore having the structure D-π-A, wherein: D is a donor, π is a π-bridge, and A is an acceptor; a bulky substituent group is covalently attached to at least one of D, π, or A; and the bulky substituent group has at least one non-covalent interaction with part of the host polymer that impedes chromophore depoling.
摘要:
A low index of refraction hybrid optical cladding may be formed from a fluorinated sol-gel. An electro-optic device may include a poled organic chromophore-loaded modulation layer (electro-optic polymer) and at least one adjacent fluorinated hybrid sol-gel cladding layer.
摘要:
A method of forming articles having closed microchannels includes the steps of providing a substrate including a composite material, the composite having metal nanoparticles dispersed in a polymer matrix. The substrate is irradiated with a laser beam at an intensity and time sufficient to selectively remove the polymer below a surface of said substrate to form at least one microchannel, wherein the intensity and time is low enough to avoid removing the polymer above the microchannel, wherein an article having at least one closed microchannel is formed. A metal nanoparticle/polymer composite composition can have functionality that can undergo addition reactions to seal or join pieces of polymers or composites upon irradiation of the composition placed on one or more pieces.
摘要:
The present invention is directed to an electrophoretic display comprising: (a) microcups comprising partition walls and top-openings; (b) an organic-based electrophoretic fluid filled in the microcups, wherein said fluid comprises charged pigment particles dispersed in a solvent; and (c) a top-sealing layer formed from a sealing composition to enclose the electrophoretic fluid within the microcups. The sealing composition comprises: (i) a water soluble polymer, (ii) a water-based suspension, a water-based dispersion, a water-based emulsion, or a water-based latex, each comprising a polymer; and (iii) water.
摘要:
A field effect transistor (FET) includes a trench extending into a semiconductor region. A conductive electrode is disposed in the trench, and the conductive electrode is insulated from the semiconductor region by a dielectric layer. The conductive electrode includes a conductive liner lining the dielectric layer along opposite sidewalls of the trench. The conductive liner has tapered edges such that a thickness of the conductive liner gradually increases from a top surface of the conductive electrode to a point in lower half of the conductive electrode. The conductive electrode further includes a conductive fill material sandwiched by the conductive liner. The FET further includes a drift region of a first conductivity type in the semiconductor region, and a body region of a second conductivity type extending over the drift region. Source regions of the first conductivity type extend in the body region adjacent the trench.
摘要:
A method and apparatus for providing uniform pressure, friction and/or contact between a substrate and a cylindrical roller in a brush-type cleaning system is described. The apparatus includes an alignment member adapted to allow pivotal movement of the cylindrical roller based on the topography of a substrate and/or the outer surface of the cylindrical roller. The method includes positioning a substrate between two cylindrical rollers, moving each of the two cylindrical rollers to a position where at least a portion of an outer surface of each of the cylindrical rollers are in contact with the major surfaces of the substrate, and rotating one or both of the substrate and the two cylindrical rollers relative to each other while allowing a longitudinal axis of one or both of the two cylindrical rollers to pivot relative to a plane defined by one of the major surfaces of the substrate.
摘要:
In a first aspect, a first apparatus is provided. The first apparatus includes a through-beam sensor coupled to a scrubber and adapted to detect a notch or flat of a substrate in the scrubber during processing. The through-beam sensor has (1) an emitter facing a first major surface of a substrate in the scrubber and adapted to transmit a beam toward an edge of the first major surface; and (2) a receiver facing a second major surface of the substrate and adapted to receive the beam transmitted from the emitter when the edge of the substrate does not obstruct the beam. Numerous other aspects are provided.
摘要:
A method for forming a semiconductor structure includes the following steps. A hard mask layer is formed over a semiconductor region. The hard mask layer has inner portions that are thinner than its outer portions, and the inner portions define an exposed surface area of the semiconductor region. A portion of the semiconductor region is removed through the exposed surface area of the semiconductor region. The thinner portions of the hard mask layer are removed to expose surface areas of the semiconductor region underlying the thinner portions. An additional portion of the semiconductor region is removed through all exposed surface areas of the semiconductor region thereby forming a trench having an upper portion that is wider than its lower portion.