公开(公告)号：US08697333B2

公开(公告)日：2014-04-15

申请号：US13271858

申请日：2011-10-12

申请人： Kyoko Soga ,  Takanobu Takeda ,  Hideto Kato

发明人： Kyoko Soga ,  Takanobu Takeda ,  Hideto Kato

IPC分类号： G03C1/00 ,  G03F7/00

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0757 ,  G03F7/38 ,  G03F7/40

摘要： A photocurable composition includes: (A) an epoxy group-containing polymer compound having repeating units represented by the following formula (1), where R1 to R4 are each a hydrocarbon group, m is an integer of 1 to 100, a, b, c and d are each 0 or a positive number, such that 0

摘要翻译： 光固化性组合物包括：（A）具有下式（1）表示的重复单元的含环氧基的高分子化合物，其中，R1〜R4各自为烃基，m为1〜100的整数，a，b， c和d各自为0或正数，使得0 <（c + d）/（a + b + c + d）＆nlE; 1.0，X和Y各自为式（2）或（3） 条件是存在至少一个式（3）的基团，（B）由式（8）表示的光致酸产生剂和（C）溶剂。

公开(公告)号：US08367295B2

公开(公告)日：2013-02-05

申请号：US12110651

申请日：2008-04-28

申请人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

发明人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

IPC分类号： G03F7/004

CPC分类号： G03F7/0048 ,  G03F7/0382 ,  G03F7/0397

摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.

摘要翻译： 提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。 本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于 将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。

公开(公告)号：US20120094222A1

公开(公告)日：2012-04-19

申请号：US13271858

申请日：2011-10-12

申请人： Kyoko SOGA ,  Takanobu Takeda ,  Hideto Kato

发明人： Kyoko SOGA ,  Takanobu Takeda ,  Hideto Kato

IPC分类号： G03F7/20 ,  G03F7/075

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0757 ,  G03F7/38 ,  G03F7/40

摘要： A photocurable composition includes: (A) an epoxy group-containing polymer compound having repeating units represented by the following formula (1), where R1 to R4 are each a hydrocarbon group, m is an integer of 1 to 100, a, b, c and d are each 0 or a positive number, such that 0

摘要翻译： 光固化性组合物包括：（A）具有下式（1）表示的重复单元的含环氧基的高分子化合物，其中，R1〜R4各自为烃基，m为1〜100的整数，a，b， c和d各自为0或正数，使得0 <（c + d）/（a + b + c + d）＆nlE; 1.0，X和Y各自为式（2）或（3） 条件是存在至少一个式（3）的基团，（B）由式（8）表示的光致酸产生剂和（C）溶剂。

公开(公告)号：US20100233619A1

公开(公告)日：2010-09-16

申请号：US12722068

申请日：2010-03-11

申请人： Shohei TAGAMI ,  Takanobu Takeda ,  Michihiro Sugo ,  Hideto Kato

发明人： Shohei TAGAMI ,  Takanobu Takeda ,  Michihiro Sugo ,  Hideto Kato

IPC分类号： G03F7/004 ,  C08G77/04 ,  G03F7/20

CPC分类号： C08G77/455 ,  C08G73/106 ,  C08K5/34922 ,  C08L63/00 ,  C08L79/08 ,  C08L83/10 ,  G03F7/0382 ,  G03F7/0387

摘要： A polyimide silicone having in the molecule a phenolic hydroxy group in which a part or all of hydrogen atoms are substituted with an acid labile group is provided. The polyimide silicone comprises the unit represented by the formula (1): wherein X is a tetravalent group at least a part of which is a tetravalent organic group represented by the formula (2): wherein R1 is a monovalent hydrocarbon group, R2 is a trivalent group, and n is an integer of 1 to 120 on average; and Y is a divalent organic group at least a part of which is a divalent organic group having a phenolic hydroxy group in which a part or all of hydrogen atoms are substituted with an acid labile group represented by the formula (3): wherein R3 and R4 are a hydrogen atom or an alkyl group, and R5 is an alkyl group, an aryl group, or an aralkyl group. R3 and R4, R3 and R5, or R4 and R5 may be bonded to each other to form a ring together with the carbon atom or the carbon atom and the oxygen atom to which they are bonded with the proviso that the R3, R4, and R5 are independently an alkylene group.

摘要翻译： 提供了在分子中具有一部分或全部氢原子被酸不稳定基团取代的酚羟基的聚酰亚胺硅氧烷。 聚酰亚胺硅氧烷包括由式（1）表示的单元：其中X是四价基团，其中至少一部分是由式（2）表示的四价有机基团：其中R 1是单价烃基，R 2是 三价基​​，平均为n为1〜120的整数。 Y为二价有机基团，其中至少一部分为具有酚羟基的二价有机基团，其中部分或全部氢原子被式（3）表示的酸不稳定基团取代：其中R3和 R4是氢原子或烷基，R5是烷基，芳基或芳烷基。 R 3和R 4，R 3和R 5或R 4和R 5可以彼此键合以与碳原子或碳原子和它们所键合的氧原子一起形成环，条件是R3，R4和 R5独立地是亚烷基。

公开(公告)号：US20080274422A1

公开(公告)日：2008-11-06

申请号：US12110651

申请日：2008-04-28

申请人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

发明人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

IPC分类号： G03F7/004

CPC分类号： G03F7/0048 ,  G03F7/0382 ,  G03F7/0397

摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.

摘要翻译： 提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。 本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于 将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。

公开(公告)号：US20050271978A1

公开(公告)日：2005-12-08

申请号：US11142782

申请日：2005-06-02

申请人： Takanobu Takeda ,  Osamu Watanabe

发明人： Takanobu Takeda ,  Osamu Watanabe

IPC分类号： G03F7/033 ,  C08F4/00 ,  C08F212/14 ,  C08F220/10 ,  G03C1/492 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0397 ,  G03F7/0392

摘要： A polymer is prepared by radical polymerization of a monomer using an organotellurium or organoselenium compound as a polymerization initiator. The polymer has a narrower dispersity Mw/Mn and is adequately random. A resist composition comprising the polymer as a base resin has advantages including a dissolution contrast of resist film, high resolution, exposure latitude, process flexibility, good pattern profile after exposure, and minimized line edge roughness.

摘要翻译： 使用有机碲或有机硒化合物作为聚合引发剂通过单体的自由基聚合来制备聚合物。 聚合物具有较窄的分散性Mw / Mn并且是充分随机的。 包含聚合物作为基础树脂的抗蚀剂组合物具有抗蚀剂膜的溶解对比度，高分辨率，曝光宽容度，工艺柔韧性，曝光后的良好图案轮廓和最小化线边缘粗糙度的优点。

公开(公告)号：US06737214B2

公开(公告)日：2004-05-18

申请号：US09800512

申请日：2001-03-08

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Katsuya Takemura ,  Wataru Kusaki ,  Akihiro Seki

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Katsuya Takemura ,  Wataru Kusaki ,  Akihiro Seki

IPC分类号： G03C173

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/115

摘要： A chemical amplification positive resist composition comprising a polymeric mixture of a polyhydroxystyrene derivative having a Mw of 1000-500,000 and a copolymer of hydroxystyrene and (meth)acrylate having a Mw of 1000-500,000, as a base resin, has improved dry etching resistance, high sensitivity, high resolution, and process adaptability, and is suppressed in the slimming of pattern films after development with aqueous base.

摘要翻译： 包含Mw为1000-500,000的聚羟基苯乙烯衍生物和Mw为1000-500,000的羟基苯乙烯和（甲基）丙烯酸酯的共聚物的聚合物混合物作为基础树脂的化学放大正性抗蚀剂组合物具有改善的耐干蚀刻性， 高灵敏度，高分辨率和工艺适应性，并且在用碱性水溶液显影后抑制图案膜的减薄。

公开(公告)号：US08202677B2

公开(公告)日：2012-06-19

申请号：US12457327

申请日：2009-06-08

申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

IPC分类号： G03F7/00 ,  G03F7/04 ,  G03F7/028 ,  G03F7/40

CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/114

摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.

摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

公开(公告)号：US20100009271A1

公开(公告)日：2010-01-14

申请号：US12457544

申请日：2009-06-15

申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Tamotsu Watanabe ,  Akinobu Tanaka ,  Keiichi Masunaga ,  Ryuji Koitabashi

发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Tamotsu Watanabe ,  Akinobu Tanaka ,  Keiichi Masunaga ,  Ryuji Koitabashi

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F7/0392

摘要： There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.

摘要翻译： 公开了通过使用包含聚合物的抗蚀剂组合物形成最小线宽度为65纳米或更小的抗蚀剂图案化工艺，所述抗蚀剂组合物作为化学增强抗蚀剂组合物的基础聚合物，其由羟基为 由酸不稳定基团和茚单元和/或苊单元保护，其中聚合物的重均分子量为4,000-7,000，特别是4,500-5,500。 目前存在的问题之一是线边缘粗糙度。 为了通过酸发生剂和碱性化合物来解决这个问题，存在与分辨能力的权衡关系的问题。 可以提供具有高分辨率的抗蚀剂组合物，其含有由酸不稳定基团保护的羟基苯乙烯的基础聚合物，具有减少的线边缘粗糙度的图案规则为65纳米或更小的抗蚀剂图案化工艺。

公开(公告)号：US06949323B2

公开(公告)日：2005-09-27

申请号：US10283263

申请日：2002-10-30

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Kazunori Maeda ,  Hiroshi Miyakoshi

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Kazunori Maeda ,  Hiroshi Miyakoshi

IPC分类号： G03F7/032 ,  C08F12/22 ,  G03F7/039 ,  H01L21/027 ,  G03F7/004

CPC分类号： G03F7/0397 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

摘要： Resist compositions comprising as the base resin a polymer using tert-amyloxystyrene as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in the baking temperature range of 100-110° C. which is unachievable with tert-butoxystyrene. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.

摘要翻译： 包含作为基础树脂的聚合物的抗蚀剂组合物使用在酸的作用下可分解的叔淀粉氧基苯乙烯作为反应性基团以增加在碱中的溶解度的优点包括显着增强曝光前后碱溶解速率的对比度，高灵敏度 ，并且在100-110℃的烘烤温度范围内具有高分辨率，其不能用叔丁氧基苯乙烯进行。 组合物最适合用作VLSI制造中的微图案化学放大抗蚀剂材料。