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    Method for the production of a plurality of opto-electronic semiconductor chips and opto-electronic semiconductor chip
    42.
    发明授权
    Method for the production of a plurality of opto-electronic semiconductor chips and opto-electronic semiconductor chip 有权
    生产多个光电子半导体芯片和光电半导体芯片的方法

    公开(公告)号：US08017416B2

    公开(公告)日：2011-09-13

    申请号：US10566955

    申请日：2004-07-22

    申请人： Volker Härle

    发明人： Volker Härle

    IPC分类号： H01L21/00

    CPC分类号： H01L33/005 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Presented is a method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with at least one semiconductor layer. The method involves providing a chip composite base that includes a substrate and a growth surface. A mask material layer is formed on the growth surface. The mask material layer includes a multiplicity of windows having an average extent of less than or equal to 1 μm. A mask material is chosen so that a semiconductor material of the semiconductor layer that is to be grown essentially cannot grow on the mask material or can grow in a substantially worse manner in comparison with the growth surface. Subsequently, semiconductor layers are deposited essentially simultaneously onto regions of the growth surface that lie within the windows. The chip composite base with applied material is singulated to form semiconductor chips.

    摘要翻译： 提出了一种用于制造多个具有多个具有至少一个半导体层的结构元件的光电子半导体芯片的方法。 该方法包括提供包括基底和生长表面的芯片复合基底。 在生长表面上形成掩模材料层。 掩模材料层包括平均程度小于或等于1μm的多个窗口。 选择掩模材料，使得待生长的半导体层的半导体材料基本上不能在掩模材料上生长，或者可以以与生长表面相比更差的方式生长。 随后，半导体层基本上同时沉积在位于窗内的生长表面的区域上。 将具有应用材料的芯片复合基底单片化以形成半导体芯片。

    Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component
    43.
    发明申请
    Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component 有权
    用于横向切割半导体晶片和光电元件的方法

    公开(公告)号：US20090290610A1

    公开(公告)日：2009-11-26

    申请号：US11991488

    申请日：2006-08-07

    申请人： Christoph Eichler ,  Volker Härle

    发明人： Christoph Eichler ,  Volker Härle

    IPC分类号： H01S5/00 ,  H01L21/30 ,  H01L33/00

    CPC分类号： H01S5/0201 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for laterally dividing a semiconductor wafer (1) comprises the method steps of: providing a growth substrate (2); epitaxially growing a semiconductor layer sequence (3), which comprises a functional semiconductor layer (5), onto the growth substrate (2); applying a mask layer (10) to partial regions of the semiconductor layer sequence (3) in order to produce masked regions (11) and unmasked regions (12); implanting ions through the unmasked regions (12) in order to produce implantation regions (13) in the semiconductor wafer (1); and dividing the semiconductor wafer (1) along the implantation regions (13), wherein the growth substrate (2) or at least one part of the growth substrate (2) is separated from the semiconductor wafer.

    摘要翻译： 一种用于横向分割半导体晶片（1）的方法包括以下方法步骤：提供生长衬底（2）; 在生长衬底（2）上外延生长包括功能半导体层（5）的半导体层序列（3）; 将掩模层（10）施加到所述半导体层序列（3）的部分区域以产生掩蔽区域（11）和未屏蔽区域（12）; 通过未掩模区域（12）注入离子，以便在半导体晶片（1）中产生注入区域（13）; 以及沿着所述注入区域（13）划分所述半导体晶片（1），其中所述生长衬底（2）或所述生长衬底（2）的至少一部分与所述半导体晶片分离。

    Method of fabricating a semiconductor chip with a nitride compound semiconductor material
    44.
    发明授权
    Method of fabricating a semiconductor chip with a nitride compound semiconductor material 有权
    用氮化物半导体材料制造半导体芯片的方法

    公开(公告)号：US07524737B2

    公开(公告)日：2009-04-28

    申请号：US11314447

    申请日：2005-12-20

    申请人： Georg Brüderl ,  Volker Härle

    发明人： Georg Brüderl ,  Volker Härle

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76254 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/405

    摘要： In a process for producing a semiconductor chip, a functional semiconductor layer sequence (2) is grown epitaxially on a growth substrate (1). Then, a separating zone (4), which lies parallel to a main surface (8) of the growth substrate (1), is formed in the growth substrate (1) by ion implantation, the ion implantation taking place through the functional semiconductor layer sequence (2). Then, a handle substrate (6) is applied to the functional semiconductor layer sequence (2), and a part of the growth substrate (1) which is remote from the handle substrate (6) as seen from the separating zone (4), is detached along the separating zone (4).

    摘要翻译： 在制造半导体芯片的工艺中，在生长衬底（1）上外延生长功能性半导体层序列（2）。 然后，通过离子注入在生长衬底（1）中形成平行于生长衬底（1）的主表面（8）平行的分离区（4），通过功能半导体层发生离子注入 序列（2）。 然后，从功能半导体层序列（2）施加手柄基板（6），从分离区域（4）观察到远离手柄基板（6）的生长基板（1）的一部分， 沿分离区（4）分离。

    Method of production of a patterned semiconductor layer
    45.
    发明授权
    Method of production of a patterned semiconductor layer 失效
    图案化半导体层的制造方法

    公开(公告)号：US06864112B1

    公开(公告)日：2005-03-08

    申请号：US09722461

    申请日：2000-11-28

    申请人： Volker Härle

    发明人： Volker Härle

    IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/306 ,  H01S5/02 ,  H01S5/026 ,  H01L21/00

    CPC分类号： H01L21/30604

    摘要： The present invention relates to a method for the production of semiconductor components. This method comprises the steps of applying masking layers and components on epitaxial semiconductor substrates within the epitaxy reactor without removal of the substrate from the reactor. The masking layers may be HF soluble such that a gas etchant may be introduced within the reactor so as to etch a select number and portion of masking layers. This method may be used for production of lateral integrated components on a substrate wherein the components may be of the same or different type. Such types include electronic and optoelectronic components. Numerous masking layers may be applied, each defining particular windows intended to receive each of the various components. In the reactor, the masks may be selectively removed, then the components grown in the newly exposed windows.

    摘要翻译： 本发明涉及半导体元件的制造方法。 该方法包括以下步骤：在外延反应器内的外延半导体衬底上施加掩模层和组件，而不从反应器移除衬底。 掩蔽层可以是HF可溶的，使得可以在反应器内引入气体蚀刻剂，以便蚀刻选择数量和部分掩蔽层。 该方法可以用于在衬底上生产横向集成组件，其中组件可以具有相同或不同的类型。 这些类型包括电子和光电子元件。 可以应用许多掩蔽层，每个屏蔽层限定旨在接收各种部件中的每一个的特定窗口。 在反应器中，可以选择性地去除掩模，然后在新露出的窗口中生长组分。

    Radiation-Emitting Semiconductor Body with Carrier Substrate and Method for the Production thereof
    49.
    发明申请
    Radiation-Emitting Semiconductor Body with Carrier Substrate and Method for the Production thereof 失效
    具有载体基板的辐射发射半导体体及其制造方法

    公开(公告)号：US20110186904A1

    公开(公告)日：2011-08-04

    申请号：US13085976

    申请日：2011-04-13

    申请人： Volker Härle ,  Zeljko Spika

    发明人： Volker Härle ,  Zeljko Spika

    IPC分类号： H01L33/42

    CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor body with a carrier substrate. A structured connection is produced between a semiconductor layer sequence (2) and a carrier substrate wafer (1). The semiconductor layer sequence is subdivided into a plurality of semiconductor layer stacks (200) by means of cuts (6) through the semiconductor layer sequence, and the carrier substrate wafer (1) is subdivided into a plurality of carrier substrates (100) by means of cuts (7) through the carrier substrate wafer (1). In the method, the structured connection is formed in such a way that at least one semiconductor layer stack (200) is connected to one and only one associated carrier substrate (100). In addition, at least one cut (7) through the carrier substrate wafer is not extended by any of the cuts (6) through the semiconductor layer sequence such that a straight cut results through the carrier substrate wafer and the semiconductor layer sequence.

    摘要翻译： 具有载体衬底的辐射发射半导体本体。 在半导体层序列（2）和载体基板晶片（1）之间产生结构化连接。 半导体层序列通过半导体层序列通过切口（6）被分成多个半导体层堆叠（200），并且载体衬底晶片（1）通过装置被细分为多个载体衬底（100） 的切口（7）穿过载体基板晶片（1）。 在该方法中，结构化连接形成为使得至少一个半导体层堆叠（200）连接到一个且仅一个相关联的载体基板（100）。 此外，穿过载体衬底晶片的至少一个切口（7）不通过半导体层序列中的任何切口（6）延伸，使得通过载体衬底晶片和半导体层序列产生直线切割。

    Optoelectronic component and package for an optoelectronic component
    50.
    发明授权
    Optoelectronic component and package for an optoelectronic component 有权
    用于光电子元件的光电元件和封装

    公开(公告)号：US07893452B2

    公开(公告)日：2011-02-22

    申请号：US11575797

    申请日：2005-09-28

    申请人： Volker Härle

    发明人： Volker Härle

    IPC分类号： H01L31/00

    CPC分类号： H01L33/507 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip and a chip encapsulating eclement, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation.

    摘要翻译： 具有适于发射主要电磁辐射的半导体芯片的光电子部件，具有用于接收半导体芯片的凹部和用于半导体芯片和芯片封装元件的外部电连接的电引线的基本封装体，其包围 半导体芯片在凹槽中。 基本封装体至少部分地透射至少部分主要辐射，并且半导体芯片的光轴穿过基本封装主体。 基本封装主体包括发光转换材料，其适于将至少部分初级辐射转换成与初级辐射相比至少部分变化的波长的次级辐射。