公开(公告)号：US06828619B2

公开(公告)日：2004-12-07

申请号：US10445827

申请日：2003-05-28

申请人： Akira Yoshino

发明人： Akira Yoshino

IPC分类号： H01L2976

CPC分类号： H01L27/11568 ,  H01L27/115

摘要： A nonvolatile semiconductor storage device has a semiconductor substrate, a gate electrode formed on a surface of the semiconductor substrate, and a first diffusion layer and a second diffusion layer formed in the surface of the semiconductor substrate on opposite sides of the gate electrode, a channel region being formed between the first and second diffusion layers. A first insulating layer, isolated pieces of material and a second insulating layer are formed in order in a multilayer structure on the surface of the semiconductor substrate on the channel region.

摘要翻译： 非易失性半导体存储器件具有半导体衬底，形成在半导体衬底的表面上的栅电极和形成在栅电极的相对侧上的半导体衬底的表面中的第一扩散层和第二扩散层，沟道 区域形成在第一和第二扩散层之间。 第一绝缘层，隔离的材料片和第二绝缘层在沟道区域上的半导体衬底的表面上的多层结构中依次形成。

公开(公告)号：US6082136A

公开(公告)日：2000-07-04

申请号：US796746

申请日：1997-02-07

申请人： Akira Yoshino

发明人： Akira Yoshino

IPC分类号： F25J3/04 ,  F25J3/00

CPC分类号： F25J3/0409 ,  F25J3/04024 ,  F25J3/04139 ,  F25J3/04193 ,  F25J3/04254 ,  F25J3/04321 ,  F25J3/04381 ,  F25J3/04412 ,  F25J2210/50

摘要： There are included a fractionating tower for liquefying and separating the compressed air cooled by heat exchangers to an ultralow temperature, a liquid oxygen takeout path for guiding the liquid oxygen in the above-mentioned fractionating tower to the above-mentioned heat exchangers to gasify so as to become a gasified oxygen, and a product oxygen gas takeout path which extends from the front end of the above-mentioned liquid oxygen takeout path and increases the temperature of the above-mentioned gasified oxygen so as to obtain a product oxygen gas, the above-mentioned liquid oxygen takeout path being provided with an oxygen gas pressurizing pump, and the above-mentioned product oxygen gas takeout path on the side upstream the above-mentioned heat exchangers being provided with an expansion turbine. In the present invention, the liquid oxygen taken out from the fractionating tower is pressurized in a liquid state, then introduced into the expansion turbine to generate a cold, which cold is fed to the heat exchangers, so that the cold is used as a cold source for the entire equipment to reduce the cost of generating the cold.

摘要翻译： 包括用于液化和分离由热交换器冷却的压缩空气到超低温的分馏塔，用于将上述分馏塔中的液氧引导到上述热交换器的液氧取出路径以气化，以便 成为气化的氧气，以及从上述液氧取出路径的前端延伸的产物氧气取出路径，提高上述气化氧的温度，得到产物氧气，上述 所述液氧取出路径设置有氧气加压泵，并且在上述热交换器上游侧的上述产物氧气取出路径设置有膨胀涡轮机。 在本发明中，从分馏塔中取出的液态氧以液态加压，然后引入膨胀涡轮机产生冷，将冷进给到热交换器，使得冷用作冷 来源为整个设备降低产生冷的成本。

公开(公告)号：US5561076A

公开(公告)日：1996-10-01

申请号：US378104

申请日：1995-01-26

申请人： Akira Yoshino

发明人： Akira Yoshino

IPC分类号： H01L21/316 ,  H01L21/314 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L21/314 ,  H01L21/76264 ,  H01L21/76267 ,  H01L21/76283

摘要： The invention provides a method of fabricating a semiconductor device on an SOI substrate having a single crystal silicon substrate, a silicon dioxide film laid on top of the silicon substrate and a single crystal silicon layer laid on top of the silicon dioxide film. The method includes the steps of forming a single crystal silicon island composed of the single crystal silicon layer in a first region in which the semiconductor device is to be fabricated, and selectively forming a low temperature deposition silicon dioxide film in a second region in which the semiconductor device is not to be fabricated in the presence of photoresist, so that the low temperature deposition silicon dioxide film covers side surfaces of the silicon island. The second region turns into an isolation region for electrically separating adjacent semiconductor devices.

摘要翻译： 本发明提供一种在具有单晶硅衬底的SOI衬底上制造半导体器件的方法，在硅衬底上放置的二氧化硅膜和位于二氧化硅膜顶部的单晶硅层。 该方法包括以下步骤：在要制造半导体器件的第一区域中形成由单晶硅层组成的单晶硅岛;以及在第二区域中选择性地形成低温沉积二氧化硅膜，其中 在光致抗蚀剂的存在下不制造半导体器件，使得低温沉积二氧化硅膜覆盖硅岛的侧表面。 第二区域变成用于电分离相邻半导体器件的隔离区域。

公开(公告)号：US5336300A

公开(公告)日：1994-08-09

申请号：US14998

申请日：1993-02-08

申请人： Akira Yoshino ,  Hiromi Kiyama ,  Nobuhiko Mihoichi

发明人： Akira Yoshino ,  Hiromi Kiyama ,  Nobuhiko Mihoichi

IPC分类号： B01D53/12 ,  B01D53/08

CPC分类号： B01D53/08 ,  B01D2253/108 ,  B01D2256/10 ,  B01D2256/12 ,  B01D2257/102 ,  B01D2259/40005 ,  B01D2259/40081 ,  B01D2259/4009 ,  B01D53/0446 ,  B01D53/0462

摘要： A method and an apparatus for separating a specific component gas from a mixed gas, wherein granular adsorbent is held in a sealed space in a layered state, easily adsorptive gas is adsorbed to the granular adsorbent by blowing material mixed gas into the adsorbent layers and contacting the granular adsorbent with a counter-current of material gas, and the granular adsorbent is transferred gradually out of the sealed space, and reactivated by desorbing the easily adsorptive gas from the granular adsorbent, and the reactivated granular adsorbent is returned to the inside of the sealed space to be reused. Therefore, frequent actions of opening and closing valves are unnecessary, so that it is possible to separate and produce excellent product gas with high purity.

摘要翻译： 一种用于从混合气体中分离特定组分气体的方法和装置，其中颗粒状吸附剂以分层状态保持在密封空间中，容易吸附的气体通过将材料混合气体吹入吸附剂层而吸附到颗粒吸附剂上， 具有逆流材料气体的粒状吸附剂和粒状吸附剂逐渐从密封空间中移出，并通过从颗粒吸附剂中解吸容易吸附的气体而再活化，再活化的粒状吸附剂返回到 密封空间要重复使用。 因此，不需要开阀和关闭阀的频繁动作，因此能够分离和制造高纯度的优异的产品气体。

公开(公告)号：US5254181A

公开(公告)日：1993-10-19

申请号：US727614

申请日：1991-07-10

申请人： Akira Yoshino ,  Masaki Tahara ,  Haruo Senbokuya ,  Kenzo Kitano ,  Teruo Minato

发明人： Akira Yoshino ,  Masaki Tahara ,  Haruo Senbokuya ,  Kenzo Kitano ,  Teruo Minato

IPC分类号： C23C8/34

CPC分类号： C23C8/34

摘要： This invention relates to a method for forming a uniform, deep nitride layer on and in steel works at low cost, wherein a steel work is fluorided in heated condition in an atmosphere of a mixed gas composed of fluorine gas and inert gas and, then, nitrided in heated condition in an atmosphere of nitriding gas.

摘要翻译： 本发明涉及一种在低成本的钢铁工件上形成均匀的深氮化物层的方法，其中在由氟气和惰性气体组成的混合气体的气氛中，在加热条件下对工件进行氟化， 在氮化气体气氛中在加热条件下氮化。

公开(公告)号：US5073512A

公开(公告)日：1991-12-17

申请号：US512291

申请日：1990-04-20

申请人： Akira Yoshino

发明人： Akira Yoshino

IPC分类号： H01L21/336 ,  H01L21/74 ,  H01L29/10

CPC分类号： H01L29/66583 ,  H01L21/74 ,  H01L29/1083 ,  H01L29/66537 ,  Y10S148/026

摘要： On a semiconductor substrate, a thin insulating film to be used as a gate insulating film, a thin polysilicon film and a thick mask layer are formed in the order and an opening for gate electrode formation is formed in the mask layer. After an ion implantation of impurities having the same conductivity type as that of the substrate is performed thereto through the opening to form, in the substrate, an impurity region having the same conductivity type as and impurity density larger than that of the substrate, the opening is filled with electrically conductive material. Thereafter, the mask layer is removed and an exposed first polysilicon film is removed to form a gate electrode comprising the conductive material and an underlying portion of the polysilicon film. Then, source region and drain region are formed in self-aligned manner with respect to the gate electrode.

摘要翻译： 在半导体基板上，按照顺序形成用作栅极绝缘膜的薄绝缘膜，薄多晶硅膜和厚掩模层，并且在掩模层中形成用于栅电极形成的开口。 在离子注入后，通过开口对其进行与衬底相同的导电类型的杂质的离子注入，在衬底中形成具有与衬底相同的导电类型和杂质密度的杂质区，开口 填充有导电材料。 此后，去除掩模层，并且去除暴露的第一多晶硅膜以形成包括导电材料和多晶硅膜的下面部分的栅电极。 然后，相对于栅电极以自对准的方式形成源极区域和漏极区域。

公开(公告)号：US4979465A

公开(公告)日：1990-12-25

申请号：US457140

申请日：1989-12-26

申请人： Akira Yoshino ,  Kenji Okumura ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

发明人： Akira Yoshino ,  Kenji Okumura ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14

CPC分类号： C23C16/45514 ,  C23C16/455 ,  C23C16/45591 ,  C30B25/14

摘要： The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method.Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision with a conventional Metalorganic Chemical Vapor Deposition Method(MOCVD). However, in case of forming semiconductor layer on the surface of a substrate with a large area, it is impossible to form homogeneous semiconductor layer.According to the present invention, a reactant gas dispersing chamber is disposed under a reaction chamber disposed within a vacuum chamber, the both chambers are communicated by a plurality of communicating holes, a feeding pipe for supplying reactant gas is extended into the reactant gas dispersing chamber, an end opening thereof is faced downward and a color portion is formed in parallel at the circumference of the end opening. Said reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via said communicating holes. Therefore, even if on a substrate with a large area, homogeneous semiconductor layer can be formed.

公开(公告)号：US4951603A

公开(公告)日：1990-08-28

申请号：US243006

申请日：1988-09-12

申请人： Akira Yoshino ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

发明人： Akira Yoshino ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  H01L21/00

CPC分类号： C23C16/45574 ,  C23C16/45508 ,  C23C16/45517 ,  C23C16/45565 ,  C23C16/54 ,  H01L21/67017

摘要： Apparatus for continuously producing semiconductor films on substrates in a vacuum chamber. A plurality of reaction chambers are provided within the vacuum chamber, substrates are supported by a top plate and transferred to each reaction chamber, which are filled with a certain reactant gas mixture while the substrates are heated from above the reaction chamber. Continuous treatment of the substrates is provided with an increase in reactant gas utilization efficiency. Disturbance of reactant gas flow by thermal convection is prevented and semiconductor layers having smooth surfaces are formed.

摘要翻译： 用于在真空室中在基板上连续生产半导体膜的装置。 多个反应室设置在真空室内，基板由顶板支撑并转移到每个反应室，每个反应室填充有特定的反应气体混合物，同时从反应室上方加热基板。 随着反应物气体的利用效率的提高，连续处理基板。 通过热对流来防止反应气体流动的干扰，并形成具有平滑表面的半导体层。

公开(公告)号：US4731102A

公开(公告)日：1988-03-15

申请号：US53293

申请日：1987-04-07

申请人： Akira Yoshino

发明人： Akira Yoshino

IPC分类号： F25J3/04 ,  F25J3/00

CPC分类号： F25J3/04181 ,  F25J3/04018 ,  F25J3/0409 ,  F25J3/04157 ,  F25J3/04212 ,  F25J3/04218 ,  F25J3/04254 ,  F25J3/04412 ,  F25J3/04636 ,  F25J3/0486 ,  F25J3/04866 ,  F25J2200/06 ,  F25J2205/32 ,  F25J2205/34 ,  F25J2205/60 ,  F25J2205/70 ,  F25J2210/50 ,  F25J2230/04 ,  F25J2235/50 ,  F25J2250/40 ,  F25J2250/50 ,  Y10S62/913

摘要： The invention provides an apparatus for production of highly pure oxygen gas by cryogenic liquefaction and separation of air which does not include an expansion turbine which is known to frequently cause operation troubles. The apparatus comprises an oxygen gas production apparatus comprising an air compression means for compressing air from an outside source, a purification means for removing carbon dioxide gas and water vapor from the air compressed by said air compression means, a heat exchange means for chilling the compressed air from said purification means to a cryogenic temperature, a fractionation column for liquefying and fractionating the compressed air chilled to a cryogenic temperature by said heat exchange means and holding nitrogen in gaseous state and oxygen in liquid state, a liquid oxygen storage means for receiving liquid oxygen from an outside source and storing the same, a line for continuously introducing into said fractionation column the liquid oxygen from said liquid oxygen storage means in lieu of the generated refrigeration from a cold heat generating expansion means, an oxygen gas withdrawal line for guiding the liquid oxygen within said fractionation column as a refrigerant to said heat exchange means and withdrawing the gasified oxygen produced by heat exchange as a product oxygen gas, and a pressurizing means for pressurizing the product oxygen gas withdrawn from said oxygen withdrawal line.

摘要翻译： PCT No.PCT / JP86 / 00409 Sec。 371日期：1987年4月7日 102（e）日期1987年4月7日PCT申请日1986年8月8日PCT公布。 第WO87 / 01184号公报 日本1987年2月26日。本发明提供了一种用于通过低温液化和分离空气来生产高纯氧气的装置，其不包括已知经常引起操作困难的膨胀涡轮机。 该装置包括氧气制备装置，包括用于压缩来自外部源的空气的空气压缩装置，用于从由所述空气压缩装置压缩的空气中去除二氧化碳气体和水蒸汽的净化装置，用于冷却压缩的 从所述净化装置到低温的空气，用于液化和分馏通过所述热交换装置冷却至低温的压缩空气并保持处于液态的氮气和液态氧的分馏塔，用于接收液体的液氧储存装置 来自外部源的氧气并存储在所述分馏塔中，来自所述液体氧气存储装置的液氧代替来自冷热产生膨胀装置的所产生的冷冻，用于引导 所述分馏塔内的液氧作为制冷剂 所述热交换装置和抽出通过热交换产生的气化氧作为产物氧气;以及加压装置，用于对从所述除氧管线排出的产物氧气进行加压。

公开(公告)号：US09893378B2

公开(公告)日：2018-02-13

申请号：US13881553

申请日：2011-10-28

申请人： Naoki Matsuoka ,  Takehiro Koga ,  Hitoshi Shobukawa ,  Akira Yoshino

发明人： Naoki Matsuoka ,  Takehiro Koga ,  Hitoshi Shobukawa ,  Akira Yoshino

IPC分类号： H01M10/056 ,  H01M10/052 ,  H01M10/0567 ,  H01M10/0568 ,  H01M10/0569 ,  H01M10/0525

CPC分类号： H01M10/056 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0567 ,  H01M10/0568 ,  H01M10/0569 ,  H01M2300/0028

摘要： The non-aqueous electrolyte solution of the present invention is a non-aqueous electrolyte solution comprising acetonitrile and a lithium salt, wherein the anion of the lithium salt has a LUMO (lowest unoccupied molecular orbital) energy in the range of −2.00 to 4.35 eV, and a HOMO (highest occupied molecular orbital) energy in the range of −5.35 to −2.90 eV.