Method and device for recording data and erasing servo data
    42.
    发明授权
    Method and device for recording data and erasing servo data 有权
    用于记录数据和擦除伺服数据的方法和装置

    公开(公告)号:US07224544B2

    公开(公告)日:2007-05-29

    申请号:US10985815

    申请日:2004-11-10

    IPC分类号: G11B5/03

    摘要: After a DC erasing is performed in a direction by permanent magnets on a servo signal recording part, servo signals are recorded in the signal recording area of the servo signal recording part by a magnetic field in the direction opposite to that of the DC erasing. Thus, in a recording method for a magnetic recording medium having a data signal recording part and the servo signal recording part on a magnetic layer, accurate servo signals can be recorded and reproduced even on the medium having the magnetic layer of 0.13 μm or smaller.

    摘要翻译: 在通过伺服信号记录部件上的永久磁铁的方向进行DC擦除之后,伺服信号以与DC擦除方向相反的方向的磁场记录在伺服信号记录部分的信号记录区域中。 因此,在具有数据信号记录部分和磁性层上的伺服信号记录部分的磁记录介质的记录方法中,即使在具有0.13μm或更小的磁性层的介质上也能够记录和再现精确的伺服信号。

    Piezoelectric sounding body and electronic device
    43.
    发明申请
    Piezoelectric sounding body and electronic device 审中-公开
    压电式发声体和电子装置

    公开(公告)号:US20060158064A1

    公开(公告)日:2006-07-20

    申请号:US11291739

    申请日:2005-12-01

    IPC分类号: H01L41/08

    摘要: An enclosure of a cellular phone is formed with a plurality of sound releasing holes. The inside of a portion where the sound releasing holes are provided defines an air chamber formed with a receiving portion for mounting a piezoelectric sounding element. The piezoelectric sounding element is of bimorph structure formed by adhering piezoelectric elements on both surfaces of a diaphragm, and serves as a speaker by hermetically fixing a peripheral edge of the diaphragm to the receiving portion. Acoustic characteristics of such a piezoelectric sounding body relates to the total sum S of side surface areas of the sound releasing holes. Therefore, by setting the total sum to a value from 1.5 mm to 60 mm2, variations in resonant frequency and lowering of the sound pressure are prevented, and hence the required acoustic characteristics can be secured while realizing reduction of the thickness of the wall of the enclosure.

    摘要翻译: 蜂窝电话的外壳形成有多个声音释放孔。 设置有声音释放孔的部分的内部限定了形成有用于安装压电发声元件的接收部分的空气室。 压电探测元件是通过将隔膜的两个表面上的压电元件粘合而形成的双压电晶片结构,并且通过将隔膜的周边缘气密地固定到接收部分而用作扬声器。 这种压电发声体的声学特性与声音释放孔的侧面积的总和S有关。 因此,通过将总和设定为1.5mm至60mm 2的值,可以防止谐振频率的变化和声压的降低,从而可以确保所需的声学特性,同时实现减小 的外壳壁厚。

    Piezoelectric transformer
    45.
    发明授权
    Piezoelectric transformer 失效
    压电变压器

    公开(公告)号:US06288479B1

    公开(公告)日:2001-09-11

    申请号:US09441961

    申请日:1999-11-17

    IPC分类号: H01L41107

    CPC分类号: H01L41/107

    摘要: There is provided a piezoelectric transformer. The piezoelectric transformer includes: a long-plate-shaped piezoelectric member being polarized in a thickness direction and a longitudinal direction; and input electrodes and output electrodes mounted on the piezoelectric member, wherein a thickness ratio LC/LA of the piezoelectric member ranges from 0.01 to 0.06, LC and LA being a thickness and a longitudinal length of the piezoelectric member, respectively. The piezoelectric member consists of either laminated piezoelectric layers or a monolayer. A thickness ratio LC/LA of the piezoelectric member 10 ranges from 0.01 to 0.06, more preferably, 0.02 to 0.05, thereby resulting in an enhanced efficiency, wherein LA and LC refer to a length and a thickness of the piezoelectric member 10, respectively. Further, an electrode length ratio LB/LA of the piezoelectric member ranges from 0.6 to 0.9, more preferably, 0.7 to 0.8, wherein LB represents a length of the input electrodes. The piezoelectric transformer of the present invention exhibits an increased output power and a larger voltage-rise ratio.

    摘要翻译: 提供了压电变压器。 压电变压器包括:长板状压电元件,其在厚度方向和长度方向上极化; 以及安装在压电元件上的输入电极和输出电极,其中压电元件的厚度比LC / LA分别为0.01至0.06,LC和LA分别为压电元件的厚度和纵向长度。 压电元件由层压压电层或单层组成。 压电元件10的厚度比LC / LA的范围为0.01至0.06,更优选为0.02至0.05,从而提高了效率,其中LA和LC分别表示压电元件10的长度和厚度。 此外,压电部件的电极长度比LB / LA为0.6〜0.9,更优选为0.7〜0.8,其中,LB表示输入电极的长度。 本发明的压电变压器表现出增加的输出功率和更大的升压比。

    Apparatus for reproducing image data from a tape-shaped recording medium
    46.
    发明授权
    Apparatus for reproducing image data from a tape-shaped recording medium 失效
    用于从带状记录介质再现图像数据的装置

    公开(公告)号:US06272280B1

    公开(公告)日:2001-08-07

    申请号:US09182007

    申请日:1998-10-29

    IPC分类号: H04N591

    摘要: A reproduction apparatus reproduces image data recorded in a plurality of recording modes with different tape feeding speeds from a tape-like recording medium. In this apparatus, in a search mode of searching for still image data by feeding the tape-like recording medium at a high speed, the recording mode of the still image data is discriminated, and the still image data is then reproduced.

    摘要翻译: 再现装置以与带状记录介质不同的带进给速度再现记录在多个记录模式中的图像数据。 在该装置中,通过以高速馈送带状记录介质来搜索静止图像数据的搜索模式中,识别静止图像数据的记录模式,然后再现静止图像数据。

    Shaft coupling structure of drive shaft
    48.
    发明授权
    Shaft coupling structure of drive shaft 失效
    驱动轴的轴联结结构

    公开(公告)号:US5645366A

    公开(公告)日:1997-07-08

    申请号:US694755

    申请日:1996-08-09

    摘要: A shaft coupling structure for a split type drive shaft comprises an internally splined female shaft and an externally splined male shaft coaxially received in the female shaft to establish a spline-connection. A play suppression member is interposed between the male and female shafts for suppressing play of the male shaft relative to the female shaft and vice versa. The play suppression member includes an elongate member extending in and along an axially extending groove defined between the male and female shafts. A hook portion possessed by the elongate member detachably fixes to one of the male and female shafts. The elongate member also has a biasing structure, which biases the male and female shafts in radially opposite directions.

    摘要翻译: 用于分体式驱动轴的联轴器结构包括内花键的母轴和同轴地容纳在母轴中的外花键的公轴,以建立花键连接。 在男性和女性的轴之间插入一个抑制构件,用于抑制阳性轴相对于阴性轴的游隙,反之亦然。 播放抑制构件包括沿着限定在阳轴和阴轴之间的轴向延伸的凹槽中延伸的细长构件。 由细长构件所具有的钩部可拆卸地固定到阳轴和阴轴中的一个。 细长构件还具有偏置结构,其偏置阳和母轴沿径向相反的方向。

    High-temperature stacked-type displacement device
    49.
    发明授权
    High-temperature stacked-type displacement device 失效
    高温堆叠式排量装置

    公开(公告)号:US5281885A

    公开(公告)日:1994-01-25

    申请号:US967536

    申请日:1992-10-28

    摘要: A flow rate control valve including a valve chest having an open end, an inflow passage and outflow passage each having one end communicating with the valve chest and the other end opened, a valve seat provided at the end of the inflow passage or outflow passage communicating with the valve chest, a sheet-like diaphragm provided to tightly close the open end of the valve chest and a stacked-type dispalcement device made of an electromechanical transducing material exhibiting the maximum value of piezoelectric distortion constant at a higher temperature range than 100.degree. C. or above and which exerts a pressure on the diaphragm by its deformation to change the position of the diaphragm, thereby controlling the gap between the valve seat and the diaphragm.

    摘要翻译: 一种流量控制阀,包括具有开口端的阀门,流入通道和流出通道,每个阀门的一端与阀门的一端连通,另一端打开;阀座,设置在流入通道或流出通道的连通端 与阀门一起设置用于紧密地关闭阀门的开口端的片状隔膜,以及由在比100度更高的温度范围内表现出最大压电变形常数值的电机转换材料制成的层叠型分布装置 C.或以上,并通过其变形对隔膜施加压力以改变隔膜的位置,从而控制阀座与隔膜之间的间隙。

    Schottky barrier diode
    50.
    发明授权
    Schottky barrier diode 有权
    肖特基势垒二极管

    公开(公告)号:US08937319B2

    公开(公告)日:2015-01-20

    申请号:US13410542

    申请日:2012-03-02

    摘要: A third insulating layer is formed in a periphery region of a substrate over a first surface (main surface) of the substrate so as to straddle a second semiconductor layer closest to a guard ring layer and a second semiconductor layer closest to the second semiconductor layer. In other words, the third insulating layer is formed to cover a portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. Thereby, the third insulating layer electrically insulates the metal layer from the portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers.

    摘要翻译: 在基板的第一表面(主表面)上的基板的周边区域中形成第三绝缘层,以跨越最靠近保护环层的第二半导体层和最靠近第二半导体层的第二半导体层。 换句话说,第三绝缘层被形成为覆盖暴露于基板的第一表面(主表面)并且位于第二半导体层之间的第一半导体层的一部分。 由此,第三绝缘层将金属层与暴露于基板的第一表面(主表面)并且位于第二半导体层之间的第一半导体层的部分电绝缘。