公开(公告)号：US07365904B2

公开(公告)日：2008-04-29

申请号：US11389315

申请日：2006-03-27

Applicant: Keisuke Matsumoto ,  Toshitaka Aoyagi ,  Kazuhisa Takagi

Inventor： Keisuke Matsumoto ,  Toshitaka Aoyagi ,  Kazuhisa Takagi

IPC: H01S3/00 ,  G02F1/35 ,  G02F1/035

CPC classification number: G02F2/004 ,  G02F2001/212 ,  G02F2203/70

Abstract: An optical wavelength converter includes: a first branch passage and a second branch passage receiving direct current light, one of the first branch passage and the second branch passage receiving input signal light; wavelength converting semiconductor optical amplifiers inserted into the first branch passage and the second branch passage, respectively; and a signal amplifying semiconductor optical amplifier for amplifying the input signal light, which is coupled with a port through which the input signal light is input to one of the first branch passage and the second branch passage. In the optical wavelength converter, differential gain of the signal amplifying semiconductor optical amplifier at a wavelength of the input signal light is less than differential gain of the wavelength converting semiconductor optical amplifier at the wavelength of the direct current light.

Abstract translation: 光波长转换器包括：第一分支通道和第二分支通道，其接收直流光，第一分支通道和第二分支通道中的一个接收输入信号光; 分别插入到第一分支通道和第二分支通道中的波长转换半导体光放大器; 以及用于放大输入信号光的信号放大半导体光放大器，其与输入信号光输入到第一分支通道和第二分支通道之一的端口耦合。 在光波长转换器中，在输入信号光的波长处的信号放大半导体光放大器的差分增益小于直流光波长处的波长转换半导体光放大器的差分增益。

公开(公告)号：US20050123018A1

公开(公告)日：2005-06-09

申请号：US10952901

申请日：2004-09-30

Applicant: Kazuhisa Takagi ,  Satoshi Shirai ,  Toshitaka Aoyagi ,  Yasuaki Tatsuoka ,  Chikara Watatani ,  Yoshihiko Hanamaki

Inventor： Kazuhisa Takagi ,  Satoshi Shirai ,  Toshitaka Aoyagi ,  Yasuaki Tatsuoka ,  Chikara Watatani ,  Yoshihiko Hanamaki

IPC: H01S5/22 ,  H01S3/08 ,  H01S5/10 ,  H01S5/12

CPC classification number: H01S5/12 ,  H01S5/1039 ,  H01S5/1221 ,  H01S5/22

Abstract: A distributed feedback semiconductor laser includes an n-InP substrate, an n-InGaAsP diffraction grating layer above the n-InP substrate, an AlGaInAs-MQW active layer above the diffraction grating layer and a ridge portion on the active layer. The ridge portion includes a p-InP cladding layer and a p-InGaAs contact layer. The wavelength λg corresponding to the bandgap energy of the diffraction grating layer and the oscillation wavelength λ of laser light produced by the laser satisfy the relationship λ−150 nm

Abstract translation: 分布式反馈半导体激光器包括n-InP衬底，n-InP衬底上的n-InGaAsP衍射光栅层，衍射光栅层上方的AlGaInAs-MQW有源层和有源层上的脊部分。 脊部包括p-InP包层和p-InGaAs接触层。 对应于衍射光栅层的带隙能量的波长兰博德纹和由激光产生的激光的振荡波长λ满足关系式<？in-line-formula description =“In-line Formulas”end =“lead”？> λ-150nm

公开(公告)号：US06845205B2

公开(公告)日：2005-01-18

申请号：US10251832

申请日：2002-09-23

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: G02F1/025 ,  H01S5/02 ,  H01S5/042 ,  H01S5/12 ,  H01S5/22 ,  G02B6/00 ,  G02B6/10 ,  H01L27/15 ,  H01L29/06

CPC classification number: H01S5/0422 ,  H01S5/0208 ,  H01S5/12

Abstract: A waveguide semiconductor optical device with a mesa ridge structure includes a semi-insulating substrate; and a ridge on the semi-insulating substrate, and including a lower cladding layer, a core layer, and an upper cladding layer sequentially laminated on the semi-insulating substrate, wherein the lower cladding layer includes a first laterally extending from the ridge and having an electrode on a top face, and a second layer with a carrier density lower than that of the first layer and in contact with the core layer.

Abstract translation: 具有台面脊结构的波导半导体光学器件包括半绝缘衬底; 以及半绝缘基板上的脊，并且包括依次层压在所述半绝缘基板上的下包覆层，芯层和上包层，其中所述下包层包括从所述脊部横向延伸的第一包层， 顶表面上的电极和载流子密度低于第一层的第二层并与芯层接触。

公开(公告)号：US06777718B2

公开(公告)日：2004-08-17

申请号：US10357375

申请日：2003-02-04

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01L3300

CPC classification number: B82Y20/00 ,  G02F1/01708 ,  G02F1/218 ,  H01L31/02327

Abstract: A semiconductor optical device includes a substrate, an optical waveguide layer on the substrate and having well and barrier layers. The semiconductor optical device also includes an optical absorbing layer on the substrate and adjacent to the optical waveguide layer so that incident light having an incident wavelength &lgr;LD is guided into the optical absorbing layer. Each of the well layers has a wavelength &lgr;g corresponding to the band gap of the well layers and that is larger than the incident wavelength &lgr;LD. Also, the band gap energy between base levels of a conduction band and a valence band of the optical waveguide layer is larger than the energy of the incident light having the incident wavelength &lgr;LD.

Abstract translation: 半导体光学器件包括衬底，衬底上的光波导层，并且具有良好的和阻挡层。 半导体光学器件还包括在衬底上并与光波导层相邻的光吸收层，使得具有入射波长λLD的入射光被引导到光学吸收层中。 每个阱层具有对应于阱层的带隙的波长长度，并且大于入射波长λLD。 此外，导带的基极电平和光波导层的价带之间的带隙能量大于具有入射波长λLD的入射光的能量。

公开(公告)号：US06396854B1

公开(公告)日：2002-05-28

申请号：US09581423

申请日：2000-06-13

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S310

CPC classification number: H01S5/0243 ,  B82Y20/00 ,  H01S5/02208 ,  H01S5/12 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/34306

Abstract: At least part of the waveguide of a laser, the waveguide including a first cladding layer, an active layer, and a second cladding layer of a second conductivity type, and, for a ridge type laser, a ridge in the second cladding layer, has a width such that light leaks from the side walls of the waveguide. A case encloses the side walls of the waveguide and a fluid having a refractive index is sealed in the case in contact with the side walls of the waveguide. A characteristic of the laser can be adjusted easily. Therefore a laser having a uniform characteristic can be provided at a low cost. This laser is useful as a light source for wavelength multiplex transmission used for optical transmission, of a main line system, such as a submarine cable.

Abstract translation: 激光波导的至少一部分，波导包括第一包层，有源层和第二导电类型的第二包层，并且对于脊型激光器，第二包层中的脊具有 使得光从波导的侧壁泄漏的宽度。 壳体包围波导的侧壁，并且具有折射率的流体被密封在与波导的侧壁接触的壳体中。 可以容易地调整激光的特性。 因此，可以以低成本提供具有均匀特性的激光器。 该激光器可用作用于光传输的波长多路复用传输的光源，诸如海底电缆的主线系统。

公开(公告)号：US6115169A

公开(公告)日：2000-09-05

申请号：US104985

申请日：1998-06-26

Applicant: Kazuhisa Takagi ,  Syoichi Kakimoto

Inventor： Kazuhisa Takagi ,  Syoichi Kakimoto

IPC: G02F1/025 ,  G02F1/015 ,  G02F1/35 ,  G02F1/361 ,  G02F1/017

CPC classification number: B82Y20/00 ,  G02F1/015 ,  G02F1/35 ,  G02F1/361 ,  G02F2001/0155 ,  G02F2001/3503 ,  G02F2202/20

Abstract: A semiconductor optical modulator which, with a relatively simple configuration, eliminates phase modulation of output light from the semiconductor optical modulator by applying a voltage to a light absorption layer on the modulator. A nonlinear optical material layer changing refractive index is located in the direction of light propagation and cancels, in the output light, the phase modulation that is generated due to light intensity variations in the light absorption layer.

Abstract translation: 具有相对简单的配置的半导体光调制器通过向调制器上的光吸收层施加电压来消除来自半导体光调制器的输出光的相位调制。 改变折射率的非线性光学材料层位于光传播的方向上，并且在输出光中消除由于光吸收层中的光强度变化而产生的相位调制。

公开(公告)号：US5715266A

公开(公告)日：1998-02-03

申请号：US600252

申请日：1996-02-12

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/30 ,  H01S5/40 ,  H01S3/19

CPC classification number: H01S5/4043 ,  H01S5/2004 ,  H01S5/30

Abstract: A semiconductor laser comprises a first laser structure, a tunnel diode structure, and a second laser structure which are successively formed so that the forward directions of the first laser structure and the second laser structure are the same as the forward direction of the semiconductor laser, and the forward direction of the tunnel diode structure is reverse to the forward direction of the semiconductor laser, wherein laser beams are generated when a current flows in the forward direction, and an optical waveguide layer having a larger refractive index than the refractive indices of the first laser structure and the second laser structure and provided between the second laser structure and the tunnel diode structure or between the first laser structure and the tunnel diode structure. Therefore, even though the first laser structure 14 and the second laser structure 16 are formed at a long distance, the laser beam at the light emitting surface is made a single peak in shape, thereby increasing the output power of the laser.

Abstract translation: 半导体激光器包括第一激光器结构，隧道二极管结构和第二激光器结构，其被连续地形成为使得第一激光器结构和第二激光器结构的正向与半导体激光器的正向相同， 并且隧道二极管结构的正向与半导体激光器的正向相反，其中当电流沿正向流动时产生激光束，并且具有比折射率高的折射率的光波导层 第一激光器结构和第二激光器结构，并且设置在第二激光器结构和隧道二极管结构之间或者在第一激光器结构和隧道二极管结构之间。 因此，即使第一激光结构14和第二激光结构16形成为长距离，发光面的激光束形状为单峰，从而增加激光的输出功率。

公开(公告)号：US08715533B2

公开(公告)日：2014-05-06

申请号：US11667318

申请日：2005-12-13

Applicant: Kazuhisa Takagi ,  Yuko Takami ,  Yuji Koyamashita

Inventor： Kazuhisa Takagi ,  Yuko Takami ,  Yuji Koyamashita

IPC: H01B1/24 ,  H01B1/04 ,  G21F1/00

CPC classification number: H05K9/009 ,  B82Y10/00 ,  B82Y30/00

Abstract: There are provided a high-permittivity dielectric raw material, an antenna device using the raw material and being useful as, especially, the built-in antenna device of a portable phone; a portable phone which can be reduced in weight, thickness and size, with an antenna radiation efficiency improved, and an electromagnetic wave shielding body for effectively shielding electromagnetic wave from an electric cooker.A dielectric raw material A having carbons dispersed in a silicone rubber base material 1, wherein, in any one of dielectric raw materials A, 1) containing 150 to 300 pts.wt. of carbons per 100 pts.wt. of silicone rubber, 2) formed by crosslinking and molding a mixture of non-crosslinked silicone rubber, non-crosslinked organic polymer and carbons, and 3) formed by combining and blending at least two kinds of carbons having different shapes and selected from spherical carbon 2, flat carbon, carbon fiber with a specific aspect ratio, carbon nanotube and conductive carbon 3, carbons are unevenly distributed in a silicone rubber base material 1 or carbons are contained with at least part of them contacting each other.

Abstract translation: 提供了一种高介电性原料，使用该原材料的天线装置，特别是用于便携式电话的内置天线装置。 能够减轻重量，厚度和尺寸，提高天线辐射效率的便携式电话机，以及用于有效地屏蔽来自电饭煲的电磁波的电磁波屏蔽体。 在硅橡胶基材1中分散有碳的电介质原料A，其中，在包含150〜300重量份的电介质原料A， 每100重量份的碳 的硅橡胶，2）通过交联和成型非交联硅橡胶，非交联的有机聚合物和碳的混合物形成的，以及3）通过将至少两种具有不同形状的碳并且选自球形碳 2，具有特定纵横比的扁碳，碳纤维，碳纳米管和导电碳3，碳不均匀地分布在硅橡胶基材1中，或者其中至少一部分彼此接触的碳被包含。

公开(公告)号：US20130343417A1

公开(公告)日：2013-12-26

申请号：US13780651

申请日：2013-02-28

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/22

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/0655 ,  H01S5/12 ,  H01S5/34306 ,  H01S5/4031

Abstract: An optical semiconductor device includes: a semiconductor substrate; a semiconductor laser part on the semiconductor substrate and having a vertical ridge; and an optical modulator part on the semiconductor substrate, having an inverted-mesa ridge, and modulating light emitted by the semiconductor laser part.

Abstract translation: 光学半导体器件包括：半导体衬底; 半导体激光器部分，其具有垂直脊; 以及在半导体基板上具有倒置台面脊的光调制器部分，并调制由半导体激光部分发出的光。

公开(公告)号：US08526478B2

公开(公告)日：2013-09-03

申请号：US13020028

申请日：2011-02-03

Applicant: Eitaro Ishimura ,  Kazuhisa Takagi ,  Keisuke Matsumoto ,  Takeshi Saito

Inventor： Eitaro Ishimura ,  Kazuhisa Takagi ,  Keisuke Matsumoto ,  Takeshi Saito

IPC: H01S5/00

CPC classification number: H01S5/0265 ,  B82Y20/00 ,  G02B6/122 ,  G02B2006/12097 ,  G02F1/2257 ,  H01S5/02461 ,  H01S5/026 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/34306

Abstract: A semiconductor optical integrated element includes: a substrate; and a laser diode and a modulator which are integrated on the substrate. The laser diode includes an embedded waveguide having a core layer, both sides of which are embedded in a semiconductor material. The modulator includes a high-mesa ridge waveguide having a core layer, neither side of which is embedded in the semiconductor material. The core layers in the laser diode and the modulator are stripe-shaped.

Abstract translation: 半导体光学集成元件包括：基板; 以及集成在基板上的激光二极管和调制器。 激光二极管包括具有芯层的嵌入式波导，其两侧嵌入半导体材料中。 调制器包括具有核心层的高台面脊波导，其两侧都不嵌入半导体材料中。 激光二极管和调制器中的核心层是条形的。