摘要:
An inner mirror 1 which includes: a mirror body 10 tiltably mounted on a front end of a stay S that extends from a member forming a vehicle room; a mirror 20 for rear viewing, disposed at a front side of the mirror body 10; and covers 30, 40 disposed at a back side of the mirror body 10, wherein a space enabling housing of in-vehicle articles E1, E2 is formed by the mirror body 10 and the covers 30, 40.
摘要:
A vehicle environment monitoring device comprises an imaging section for taking image data of an environment of an automobile, the image including at least two types of colors; a setting section for setting a specific area of the image data obtained by the imaging section, wherein the specific area has a strip shape longer in, and parallel to, a horizontal direction of a frame image and includes at least two types of colors; an extraction section for taking in image data of the specific area in units of one or a plurality of frame images taken by the imaging section in time series and extracting moving vector information based on the image data of the specific area; and a detection section for detecting a second vehicle which is present in an environment of a first vehicle having the vehicle environment monitoring device mounted thereon, based on the moving vector information.
摘要:
A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film. The method may also include the step of forming dummy patters in a relatively large isolation region of isolation regions with relatively different planar dimensions before the first insulating film is deposited.
摘要:
A CVD device (100) used for depositing a silicon nitride has a structure in which a hot wall furnace (103) for thermally degrading a source gas and a chamber (101) for forming a film over a surface of a wafer (1) are separated from each other. The hot wall furnace (103) for thermally degrading the source gas is provided above the chamber (101), and a heater (104) capable of setting the inside of the furnace at a high temperature atmosphere of approximately 1200° C. is provided at the outer periphery thereof. The source gas, supplied to the hot wall furnace (103) through pipes (105) and (106), is thermally degraded in this furnace in advance, and degraded components thereof are supplied on a stage (102) of the chamber (101) to form a film on the surface of the wafer (1).
摘要:
A vehicle environment monitoring device comprises an imaging section for taking image data of an environment of an automobile, the image including at least two types of colors; a setting section for setting a specific area of the image data obtained by the imaging section, wherein the specific area has a strip shape longer in, and parallel to, a horizontal direction of a frame image and includes at least two types of colors; an extraction section for taking in image data of the specific area in units of one or a plurality of frame images taken by the imaging section in time series and extracting moving vector information based on the image data of the specific area; and a detection section for detecting a second vehicle which is present in an environment of a first vehicle having the vehicle environment monitoring device mounted thereon, based on the moving vector information.
摘要:
In the present invention, for example, wireless communication repeater station 10 comprising receiving portion 12 which receives a specific electric wave signal from an outside or inside of an automobile, amplifying portion 13 which amplifies the signal from receiving portion 12, and transmission portion 14, which transmits the signal amplified in amplifying portion 13 is accommodated within an interior mirror provided on an automobile, and wireless communication repeater station 10 forms a part of network connecting to electronic apparatuses within the automobile. This makes it possible to perform various information communications inside and outside of the automobile in a smooth manner. Also, this makes it possible to alternative communication even through a weak electric wave.
摘要:
Gate wiring is formed serving as first gate wiring in a DRAM-forming area, and gate wiring 33 is formed as second gate wiring in a logic-forming area. Then, cobalt silicide layer 37 is formed over a source/drain diffused layer in the DRAM-forming area, and cobalt silicide layer is formed over a source/drain diffused layer and the gate wiring in the logic-forming area. Such formation of the cobalt silicide layer reduces the resistance of the gate wiring and the contact resistance, and thereby enables the high-speed operation of a semiconductor device even if the device is microfabricated.
摘要:
Described is a manufacturing method of a semiconductor integrated circuit device by depositing a silicon nitride film to give a uniform thickness over the main surface of a semiconductor wafer having a high pattern density region and a low pattern density region. This is attained by, upon depositing a silicon nitride film over a substrate having a high gate-electrode-pattern density region and a low gate-electrode-pattern density region by using a single-wafer cold-wall thermal CVD reactor, setting a flow rate ratio of ammonia (NH3) to monosilane (SiH4) greater than that upon deposition of a silicon nitride film over a flat substrate.
摘要:
A gate interconnection portion includes a first gate interconnection portion, a second gate interconnection portion, and a third gate interconnection portion. The first gate interconnection portion is formed in parallel to a Y axis direction toward a power supply interconnection and extends to a prescribed position within an element formation region. The second gate interconnection portion is formed in parallel to a direction obliquely bent with respect to the Y-axis direction from the first gate interconnection portion toward the power supply interconnection, and extends across a boundary between the element formation region and an element isolation insulating film, which is in parallel to an X axis direction. The third gate interconnection portion further extends in parallel to the Y-axis direction from the second gate interconnection portion toward the power supply interconnection.
摘要:
To facilitate discrimination of a curb, a gutter or the like by using an infrared illuminating device and an infrared-sensitive image pickup device mounted on an exterior mirror of a vehicle when the vehicle is pulled over to a shoulder at night. Two illuminating devices having optical axes oriented downward are mounted on a housing of a side mirror at a distance from each other in the lateral direction of a vehicle. The illuminating devices alternately emit infrared light downwardly. An image pickup device sensitive to infrared light having an optical axis oriented downward is mounted on the housing at a middle position between the left and right illuminating devices. An image taken by the image pickup device is displayed on an image monitor disposed at a position where the monitor can be viewed from the driver seat.