摘要:
A magnetoresistive element has a magnetization pinned layer including a magnetic film a magnetization direction of which is substantially pinned in one direction, a magnetization free layer including a magnetic film a magnetization direction of which is varied depending on an external magnetic field, a composite spacer layer interposed between the magnetization pinned layer and the magnetization free layer, and including an insulating portion and a magnetic metal portion, and a pair of electrodes configured to supply a sense current in a direction perpendicular to planes of the magnetization pinned layer, the composite spacer layer and the magnetization free layer, in which the magnetic film included in the magnetization pinned layer and being in contact with the composite spacer layer has a bcc structure.
摘要:
Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要:
A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.
摘要:
A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
摘要:
An image forming apparatus in which an original reading portion is disposed in an upper portion of the apparatus main body, a feed portion is disposed in a lower portion of the apparatus main body, and a printing portion is disposed between the original reading portion and the feed portion as an image forming system, is configured as follows. A paper post-processing portion that can perform a plurality of types of paper post-processing for recording paper transported from the apparatus main body after printing by the printing portion is finished, and a discharge portion to which recording paper is discharged after paper post-processing by the paper post-processing portion is finished, are disposed in a space of the apparatus main body formed by the original reading portion, the printing portion, and the feed portion. The paper post-processing portion is provided such that it can slide relative to the apparatus main body. In a front face of the paper post-processing portion, a cover is provided that covers this front face. The discharge portion is provided such that it can be raised or lowered according to the quantity of stacked recording paper.
摘要:
An image forming apparatus in which an original reading portion is disposed in an upper portion of the apparatus main body, a feed portion is disposed in a lower portion of the apparatus main body, and a printing portion is disposed between the original reading portion and the feed portion as an image forming system, is configured as follows. A paper post-processing portion that can perform a plurality of types of paper post-processing for recording paper transported from the apparatus main body after printing by the printing portion is finished, and a discharge portion to which recording paper is discharged after paper post-processing by the paper post-processing portion is finished, are disposed in a space of the apparatus main body formed by the original reading portion, the printing portion, and the feed portion.
摘要:
A magnetoresistance effect element includes a nonmagnetic spacer layer, first and second ferromagnetic layer separated by the nonmagnetic spacer layer, and a nonmagnetic conductivity layer. The first ferromagnetic layer has a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field. The second ferromagnetic layer has first and second ferromagnetic films antiferromagnetically coupled to one another and an antiferromagnetically coupling film located between and in contact with the first and second ferromagnetic films. The magnetization of the first ferromagnetic layer freely rotates in a magnetic field signal. The nonmagnetic conductivity layer is disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic high-conductivity layer and the nonmagnetic spacer layer. The first ferromagnetic layer has a film thickness between 0.5 nanometers and 4.5 nanometers.
摘要:
A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.
摘要:
A charged particle beam lithography system includes a charged particle beam emitter which emits a charged particle beam to a wafer at an acceleration voltage lower than a voltage causing a proximity effect; an illumination optical system which adjusts a beam radius of the charged beam; a cell aperture having a cell pattern corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beam with a first electric field to enter a desired cell pattern of the cell aperture; a demagnification projection optical system which demagnifies the charged particle beam form the cell aperture with a second electric field to form an image on the wafer; and a second deflector which deflects the charged particle beam from the cell aperture with a third electric field to adjust an irradiation position of the charged particle beam on the wafer.
摘要:
Mechanism unit(s) functioning as automatic-feed cassette(s) and mechanism unit(s) functioning as manual-feed tray(s) together form a single integral module, constituting a hybrid paper supply module. In such constitution, paper transport path(s) may be formed between or among first guide member(s) provided at automatic-feed cassette mechanism unit(s) and second guide member(s) provided at manual-feed mechanism unit(s), and manual-feed mechanism unit(s) may be pulled outward and to side(s) of apparatus(es) so as to cause paper transport path(s) to be opened up to the exterior, facilitating removal of jammed paper. Furthermore, given such constitution, a plurality of hybrid paper supply modules may be stacked together to constitute a paper supply mechanism. Manual-feed tray(s) with which manual-feed mechanism unit(s) of respective hybrid paper supply module(s) is or are provided may be collapsible so as to permit extension and/or retraction. This will permit manual-feed tray(s) to be able to accommodate a plurality of types of recording media.