摘要:
The present invention provides a glass fiber-reinforced thermoplastic resin composition in which a particular relationship is satisfied between the glass fiber content (W (parts by weight)) and the melt viscosity (η) of the thermoplastic resin composition at molding temperature as determined at a shear rate of 1,000 sec−1. According to the present invention, there can be obtained a glass fiber-reinforced thermoplastic resin having increased strength and rigidity and excellent in practical characteristics such as impact resistance and antifreeze liquid resistance. In addition, molded articles obtained by injection-molding the composition are available as components having reduced anisotropies of mechanical characteristics and mold shrinkage factor.
摘要:
A semiconductor device includes a substrate having a first area and a second area adjacent to the first area, a first silicon layer provided on the substrate in the first area, a relaxed layer which is provided on the substrate in the second area and which has a lattice constant greater than a lattice constant of the first silicon layer, and a strained-Si layer which is provided on the relaxed layer and which has a lattice constant substantially equivalent to the lattice constant of the relaxed layer.
摘要:
Coil-like or zigzag-like linear fastener elements formed of synthetic fiber mono-filaments are attached such that coupling heads project from a side edge of a fastener tape and at least one coupling head thereof located at a top end is moved to the inside of the fastener tape so as to substantially coincide with the side edge. Then, the fastener element is fused to the fastener tape in a state in which an inverted portion project inwardly while the coupling heads are in a non-coupling condition, so as to form a top end stop. The top end stop formed of the linear fastener element includes plasticity and provides an excellent tactile feeling without any burr on the surface thereof.
摘要:
A semiconductor device includes first and second semiconductor layers and first and second MOS transistors. The first semiconductor layer is provided on and electrically connected to the semiconductor substrate. The second semiconductor layer is provided near the first semiconductor layer and formed above the semiconductor substrate via one of an insulating film and a cavity. The first and second MOS transistors are respectively provided on the first and second semiconductor layers, and each has a gate electrode arranged parallel to a boundary between the first and second semiconductor layers.
摘要:
Coil-like or zigzag-like linear fastener elements formed of synthetic fiber mono-filaments are attached such that coupling heads project from a side edge of a fastener tape and at least one coupling head thereof located at a top end is moved to the inside of the fastener tape so as to substantially coincide with the side edge. Then, the fastener element is fused to the fastener tape in a state in which an inverted portion project inwardly while the coupling heads are in a non-coupling condition, so as to form a top end stop. The top end stop formed of the linear fastener element includes plasticity and provides an excellent tactile feeling without any burr on the surface thereof.
摘要:
A resilient hydrophobic foamed polymer obtained by reacting a mixture of an isocyanate terminated urethane prepolymer and a polyisocyanate (A) with aqueous material, said prepolymer being relatively hydrophilic and the reaction product of a molar excess of a polyisocyanate (B) with a polyetherpolyol having from 15 to 50% by weight of oxethylene content, said aqueous material having a water content between about 15 to 150% by weight based on said prepolymer, the amount of said polyisocyanate (A) ranging between about 5 to 15% by weight based on said prepolymer, said polyetherpolyol being selected from the group consisting of (a) the addition polymerization product of a starting material, ethylene oxide and another epoxide and (b) a mixture of at least two of the following:(1) The addition polymerization product of a starting material and ethylene oxide;(2) the addition polymerization product of a starting material and an epoxide other than ethylene oxide;(3) the addition polymerization material, ethylene oxide and another epoxide,and said starting material being selected from the group consisting of ethylene glycol, diethylene glycol, propylene glycol; dipropylene glycol; butylene glycol; hexylene glycol; glycerol; trimethylolethane; trimethylol propane; 1,2,6-hexanetriol; pentaerythritol; .alpha.-methylglycoside; sorbitol and sucrose.
摘要:
A measuring device measures a gate length of a plurality of gate electrodes formed on a wafer. A calculation device calculates data of an ion implantation dosage for making uniform a threshold voltage in a wafer surface on the basis of distribution of the gate length in a wafer surface measured by the measuring device. The ion implantation device implants ions into the wafer on the basis of the data of the ion implantation dosage calculated by the calculation device.
摘要:
A resin composition including 30 to 90% by mass of polyamide (A), 70 to 10% by mass of glass fibers (B), a copper compound (C) and a halogenated compound (D), wherein polyamide (A) has a sum of a terminal carboxyl group concentration and a terminal amino group concentration of 100 milliequivalents/kg or more and 200 milliequivalents/kg or less, the terminal carboxyl group concentration being higher than the terminal amino group concentration; glass fibers (B) have a fiber diameter of 10 to 20 μm and a weight average fiber length of 5 to 30 mm; the content of copper based on polyamide (A) is 30 ppm or more and 200 ppm or less; and the molar ratio of halogen to copper (halogen/copper) is more than 5 and not more than 25.
摘要:
Provided is a signal processing method which can enhance the resolution of a spectrum round off by quantization and compensate energy of a spectrum truncated to zero by quantization so as to achieve reproduction without dissatisfaction or uncomfortable feeling. The selecting circuit selects a plurality of coefficients from coefficients of a frequency band of a dequantized acoustic signal. The computing circuit then computes an interpolation coefficient of a coefficient, which is not selected by the selecting circuit, by an interpolation method such as a Lagrange's interpolation method or a spline interpolation method which uses the plurality of coefficients selected by the selecting circuit.
摘要:
A semiconductor device comprises a semiconductor substrate, a plurality of transistors provided in the semiconductor substrate, and an isolation region for isolating the plurality of transistors to one another, the isolation region being comprised of an isolating insulation film, wherein a crystal structure of at least a part of the isolating insulation film is broken.