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公开(公告)号:US20200132622A1
公开(公告)日:2020-04-30
申请号:US16677666
申请日:2019-11-08
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Jonathan ROTHBERG , Wolfgang HINZ , Kim JOHNSON , James BUSTILLO
IPC: G01N27/414 , G01N33/543 , C12Q1/6818 , H01L27/088 , H01L29/78 , C12Q1/6874
Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
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公开(公告)号:US20200057021A1
公开(公告)日:2020-02-20
申请号:US16663052
申请日:2019-10-24
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Jonathan M. ROTHBERG , Keith G. FIFE , James BUSTILLO , Jordan OWENS
IPC: G01N27/414 , H01L29/66 , C12Q1/6874
Abstract: In one embodiment, a device is described. The device includes a material defining a reaction region. The device also includes a plurality of chemically-sensitive field effect transistors have a common floating gate in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically-sensitive field effect transistors indicating an analyte within the reaction region.
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公开(公告)号:US20190017959A1
公开(公告)日:2019-01-17
申请号:US15993544
申请日:2018-05-30
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Jonathan ROTHBERG , Wolfgang HINZ , Kim JOHNSON , James BUSTILLO
IPC: G01N27/414 , C12Q1/6818 , C12Q1/6874 , G01N33/543 , H01L27/088 , H01L29/78 , H01L29/423
Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
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公开(公告)号:US20180128773A1
公开(公告)日:2018-05-10
申请号:US15614589
申请日:2017-06-05
Applicant: Life Technologies Corporation
Inventor: Keith G. FIFE , Jordan OWENS , Shifeng LI , James BUSTILLO
IPC: G01N27/414 , B01L3/00 , H01L21/28
Abstract: A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.
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公开(公告)号:US20170241943A1
公开(公告)日:2017-08-24
申请号:US15427047
申请日:2017-02-07
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Jonathan ROTHBERG , Wolfgang HINZ , Kim JOHNSON , James BUSTILLO
IPC: G01N27/414 , G01N33/543 , C12Q1/68
CPC classification number: G01N27/4148 , C12Q1/6818 , C12Q1/6874 , G01N27/4145 , G01N33/54373 , G01N33/5438 , H01L27/088 , H01L29/42324 , H01L29/78 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01073 , H01L2924/14 , H01L2924/1433 , Y10T436/22 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101
Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
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公开(公告)号:US20160168635A1
公开(公告)日:2016-06-16
申请号:US15051084
申请日:2016-02-23
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Jonathan M. ROTHBERG , James BUSTILLO , Mark James MILGREW , Jonathan SCHULTZ , David MARRAN , Todd REARICK , Kim L. JOHNSON
IPC: C12Q1/68 , G01N27/414
CPC classification number: G01N27/4145 , C12Q1/6869 , C12Q1/6874 , G01N27/4148 , H01L21/82 , C12Q2565/607
Abstract: The invention is directed to apparatus and chips comprising a large scale chemical field effect transistor arrays that include an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid for analysis. In one aspect such transistor arrays have a pitch of 10 μm or less and each sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region. In one embodiment, the characteristic of said chemical or biological sample is a concentration of a charged species and wherein each of said chemical field effect transistors is an ion-sensitive field effect transistor having a floating gate with a dielectric layer on a surface thereof, the dielectric layer contacting said sample fluid and being capable of accumulating charge in proportion to a concentration of the charged species in said sample fluid. In one embodiment such charged species is a hydrogen ion such that the sensors measure changes in pH of the sample fluid in or adjacent to the sample-retaining region thereof. Apparatus and chips of the invention may be adapted for large scale pH-based DNA sequencing and other bioscience and biomedical applications.
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47.
公开(公告)号:US20160077045A1
公开(公告)日:2016-03-17
申请号:US14939101
申请日:2015-11-12
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Keith G. FIFE , Jordan OWENS , Shifeng LI , James BUSTILLO
IPC: G01N27/414 , H01L21/28
CPC classification number: G01N27/414 , B01L3/502761 , B01L2200/0668 , B01L2300/0636 , B01L2300/0877 , G01N27/4145 , G01N27/4148 , H01L21/28273
Abstract: A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.
Abstract translation: 描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口,该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮栅导体的上表面并沿着开口的侧壁延伸一段距离。
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公开(公告)号:US20160010149A1
公开(公告)日:2016-01-14
申请号:US14862930
申请日:2015-09-23
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Jonathan M. ROTHBERG , James BUSTILLO , Mark James MILGREW , Jonathan SCHULTZ , David MARRAN , Todd REARICK , Kim L. JOHNSON
IPC: C12Q1/68 , G01N27/414
CPC classification number: G01N27/4145 , C12Q1/6869 , C12Q1/6874 , G01N27/4148 , H01L21/82 , C12Q2565/607
Abstract: An apparatus comprising a chemical field effect transistor array in a circuit-supporting substrate is disclosed. The transistor array has disposed on its surface an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid. The transistor array has a pitch of 10 μm or less and a sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region.
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公开(公告)号:US20150064829A1
公开(公告)日:2015-03-05
申请号:US14543551
申请日:2014-11-17
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Keith G. FIFE , James BUSTILLO , Jordan OWENS
IPC: G01N27/414
CPC classification number: G01N27/414 , G01N27/4145
Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.
Abstract translation: 在一个实施方式中,描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 介电材料限定了延伸到浮动栅极导体的上表面的开口。 导电侧壁间隔物位于开口的侧壁上并与浮栅导体的上表面接触。
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公开(公告)号:US20140264471A1
公开(公告)日:2014-09-18
申请号:US14198402
申请日:2014-03-05
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Keith G. FIFE , Jordan OWENS , Shifeng LI , James BUSTILLO
IPC: G01N27/414
CPC classification number: G01N27/414 , B01L3/502761 , B01L2200/0668 , B01L2300/0636 , B01L2300/0877 , G01N27/4145 , G01N27/4148
Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.
Abstract translation: 在一个实施方式中,描述了化学装置。 传感器包括化学敏感的场效应晶体管,其包括具有彼此电耦合的多个浮置栅极导体的浮动栅极结构。 导电元件覆盖并与多个浮置栅极导体中的最上面的浮动栅极导体连通。 导电元件比最上面的浮栅导体更宽和更薄。 介电材料限定了延伸到导电元件的上表面的开口。
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