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公开(公告)号：US11520240B2
公开(公告)日：2022-12-06
申请号：US17314410
申请日：2021-05-07
Applicant: Micron Technology, Inc.
Inventor： Nikolay A. Mirin , Robert Dembi , Richard T. Housley , Xiaosong Zhang , Jonathan D. Harms , Stephen J. Kramer
IPC: G03F7/20 , H01L21/68 , G01R33/07 , H01L23/544
Abstract: A method of aligning a wafer for semiconductor fabrication processes may include applying a magnetic field to a wafer, detecting one or more residual magnetic fields from one or more alignment markers within the wafer, responsive to the detected one or more residual magnetic fields, determining locations of the one or more alignment markers. The marker locations may be determined relative to an ideal grid, followed by determining a geometrical transformation model for aligning the wafer, and aligning the wafer responsive to the geometrical transformation model. Related methods and systems are also disclosed.
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公开(公告)号：US11256778B2
公开(公告)日：2022-02-22
申请号：US16276471
申请日：2019-02-14
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms
IPC: G06F1/12 , G06F17/10 , G06F1/3234 , G06F1/3225 , G06F1/3296 , G06F1/08 , G06F11/00 , G11C29/52 , G06F11/34 , G06F11/07 , G11C29/06
Abstract: Methods and apparatus for using characterized devices such as memories. In one embodiment, characterized memories are associated with a range of performances over a range of operational parameters. The characterized memories can be used in conjunction with a solution density function to optimize memory searching. In one exemplary embodiment, a cryptocurrency miner can utilize characterized memories to generate memory hard proof-of-work (POW). The results may be further validated against general compute memories; such that only valid solutions are broadcasted to the mining community. In one embodiment, the validation mechanism is implemented for a plurality of searching apparatus in parallel to provide a more distributed and efficient approach. Various other applications for characterized memories are also described in greater detail herein (e.g., blockchain, social media, machine learning, probabilistic applications and other error-tolerant applications).
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公开(公告)号：US11094394B2
公开(公告)日：2021-08-17
申请号：US16580935
申请日：2019-09-24
Applicant: Micron Technology, Inc.
Inventor： Shashank Bangalore Lakshman , Jonathan D. Harms , Jonathan J. Strand , Sukneet Singh Basuta
Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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公开(公告)号：US20210089385A1
公开(公告)日：2021-03-25
申请号：US16581045
申请日：2019-09-24
Applicant: Micron Technology, Inc.
Inventor： Sukneet Singh Basuta , Shashank Bangalore Lakshman , Jonathan D. Harms , Jonathan J. Strand
Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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公开(公告)号：US10134978B2
公开(公告)日：2018-11-20
申请号：US15667364
申请日：2017-08-02
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Jonathan D. Harms , Sunil Murthy
Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20180294403A1
公开(公告)日：2018-10-11
申请号：US16006588
申请日：2018-06-12
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Jonathan D. Harms
CPC classification number: H01L43/02 , G11C11/161 , H01L27/224 , H01L43/08 , H01L43/10
Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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公开(公告)号：US10062835B2
公开(公告)日：2018-08-28
申请号：US15588994
申请日：2017-05-08
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Jonathan D. Harms
CPC classification number: H01L43/02 , G11C11/161 , H01L27/224 , H01L43/08 , H01L43/10
Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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公开(公告)号：US09960346B2
公开(公告)日：2018-05-01
申请号：US14706182
申请日：2015-05-07
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Wei Chen , Sunil S. Murthy , Witold Kula
IPC: H01L43/08
CPC classification number: H01L43/08
Abstract: A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions. A first non-magnetic insulator metal oxide-comprising region is between the first and second magnetic regions. A second non-magnetic insulator metal oxide-comprising region is between the second and third magnetic regions. Other embodiments are disclosed.
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公开(公告)号：US20170358737A1
公开(公告)日：2017-12-14
申请号：US15667364
申请日：2017-08-02
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Jonathan D. Harms , Sunil Murthy
CPC classification number: H01L43/08 , G11C11/161 , H01L27/228 , H01L43/12
Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.
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公开(公告)号：US20160155932A1
公开(公告)日：2016-06-02
申请号：US14558367
申请日：2014-12-02
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Wei Chen , Jonathan D. Harms , Sunil Murthy
CPC classification number: H01L43/08 , G11C11/161 , H01L27/228 , H01L43/12
Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.
Abstract translation: 磁性电池结构包括种子材料，包括钽，铂和钌。 种子材料包括覆盖在钽部分上的铂部分和覆盖铂部分的钌部分。 磁性体结构包括覆盖种子材料的磁性区域，覆盖磁性区域的绝缘材料和覆盖绝缘材料的另一磁性区域。 还公开了包括磁性单元结构的半导体器件，形成磁性单元结构的方法和半导体器件。
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