公开(公告)号：US07173306B2

公开(公告)日：2007-02-06

申请号：US10927948

申请日：2004-08-27

申请人： Franz Hirler ,  Ralf Henninger ,  Frank Pfirsch ,  Markus Zundel ,  Jenoe Tihanyi

发明人： Franz Hirler ,  Ralf Henninger ,  Frank Pfirsch ,  Markus Zundel ,  Jenoe Tihanyi

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/407 ,  H01L29/7813 ,  H01L29/861

摘要： The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features: a semiconductor body (100) having a first side (101) and a second side (102), a drift zone (30) of a first conduction type which is arranged in the region between the first and the second sides (101, 102) and is formed for the purpose of taking up a reverse voltage, a field electrode arrangement arranged in the drift zone (30) and having at least one electrically conducted field electrode (40; 40A–40E; 90A–90J) arranged in a manner insulated from the semiconductor body (100), an electrical potential of the at least one field electrode (40; 40A–40E; 90A–90J) varying in the vertical direction of the semiconductor body (100) at least when a reverse voltage is applied.

摘要翻译： 本发明涉及一种用于制造垂直半导体部件和具有以下特征的垂直半导体部件的漂移区的方法：具有第一侧（101）和第二侧（102）的半导体本体（100），漂移 第一导电类型的区域（30）布置在第一和第二侧面（101,102）之间的区域中并且被形成为用于吸收反向电压的目的，设置在漂移区域中的场电极布置（ 30），并且具有以与半导体本体（100）绝缘的方式布置的至少一个导电场电极（40; 40A-40E; 90A-90J），所述至少一个场电极 40; 40A-40E; 90A-90J），至少在施加反向电压时，在半导体本体（100）的垂直方向上变化。

公开(公告)号：US06833584B2

公开(公告)日：2004-12-21

申请号：US10165912

申请日：2002-06-10

申请人： Ralf Henninger ,  Franz Hirler ,  Manfred Kotek ,  Joost Larik ,  Markus Zundel

发明人： Ralf Henninger ,  Franz Hirler ,  Manfred Kotek ,  Joost Larik ,  Markus Zundel

IPC分类号： H01L2976

CPC分类号： H01L29/7811 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7397 ,  H01L29/7813

摘要： A trench power semiconductor component is described which has an edge cell in which an edge trench is provided. The edge trench, at least on an outer side wall, has a thicker insulating layer than an insulating layer of trenches of the cell array. This simple configuration provides a high dielectric strength and is economical to produce.

摘要翻译： 描述了具有其中设置有边缘沟槽的边缘单元的沟槽功率半导体部件。 至少在外侧壁上的边缘沟槽具有比电池阵列的沟槽的绝缘层更厚的绝缘层。 这种简单的结构提供了很高的介电强度并且是经济的。

公开(公告)号：US09202881B2

公开(公告)日：2015-12-01

申请号：US12186034

申请日：2008-08-05

申请人： Markus Zundel ,  Franz Hirler

发明人： Markus Zundel ,  Franz Hirler

IPC分类号： H01L29/40 ,  H01L29/08 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7809 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/861

摘要： One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side; at least two trenches arranged in the semiconductor body and extending into the semiconductor body and arranged at a distance from one another; and a field electrode arranged in the at least two trenches adjacent to the drift zone. The at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction, a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches.

摘要翻译： 一个实施例提供了包括具有第一侧和第二侧以及漂移区的半导体本体的半导体部件; 与所述漂移区域互补地并且在所述第一侧的方向上与所述漂移区域相邻地掺杂的第一半导体区域; 与所述漂移区相邻的所述漂移区与所述第二侧方向相同的导电类型的第二半导体区; 至少两个沟槽布置在半导体本体中并延伸到半导体本体中并且彼此间隔一定距离; 以及设置在与漂移区相邻的至少两个沟槽中的场电极。 所述至少两个沟槽在垂直方向上与所述第二半导体区域一定距离地布置，所述沟槽和所述第二半导体区域之间的距离大于所述沟槽之间的相互距离的1.5倍，并且所述漂移区域的掺杂浓度 在沟槽和第二半导体区域之间的区段中，在沟槽之间的截面中与最小掺杂浓度相差至多35％。

公开(公告)号：US08796761B2

公开(公告)日：2014-08-05

申请号：US13420772

申请日：2012-03-15

申请人： Franz Hirler ,  Markus Zundel

发明人： Franz Hirler ,  Markus Zundel

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/401 ,  H01L29/407 ,  H01L29/408 ,  H01L29/42368 ,  H01L29/512 ,  H01L29/66734

摘要： A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure extending along a lateral side of the trench region, wherein a part of the dielectric structure is a charged insulating structure. The semiconductor device further includes a gate electrode in the trench region and a body region of a conductivity type other than the conductivity type of the drift zone. The charged insulating structure adjoins each one of the drift zone, the body region and the dielectric structure and further adjoins or is arranged below a bottom side of a gate dielectric of the dielectric structure.

摘要翻译： 半导体器件包括从表面延伸到半导体本体的漂移区的沟槽区域。 半导体器件还包括沿着沟槽区域的横向侧延伸的电介质结构，其中介电结构的一部分是带电的绝缘结构。 半导体器件还包括沟槽区域中的栅电极和除漂移区的导电类型以外的导电类型的体区。 带电的绝缘结构邻接漂移区，体区和电介质结构中的每一个，并进一步邻接或布置在电介质结构的栅极电介质的底侧下方。

公开(公告)号：US08482036B2

公开(公告)日：2013-07-09

申请号：US13090350

申请日：2011-04-20

申请人： Markus Zundel ,  Franz Hirler

发明人： Markus Zundel ,  Franz Hirler

IPC分类号： H01L29/778

CPC分类号： H01L29/778 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/872

摘要： A lateral HEMT includes a substrate, a first semiconductor layer above the substrate and a second semiconductor layer on the first semiconductor layer. The lateral HEMT further includes a gate electrode, a source electrode, a drain electrode and a rectifying Schottky junction. A first terminal of the rectifying Schottky junction is electrically coupled to the source electrode and a second terminal of the rectifying Schottky junction is electrically coupled to the second semiconductor layer.

摘要翻译： 横向HEMT包括衬底，在衬底上方的第一半导体层和第一半导体层上的第二半导体层。 横向HEMT还包括栅电极，源电极，漏电极和整流肖特基结。 整流肖特基结的第一端电耦合到源电极，并且整流肖特基结的第二端电耦合到第二半导体层。

公开(公告)号：US20120032260A1

公开(公告)日：2012-02-09

申请号：US13276854

申请日：2011-10-19

申请人： Franz Hirler ,  Markus Zundel

发明人： Franz Hirler ,  Markus Zundel

IPC分类号： H01L29/78 ,  H01L29/41

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/945

摘要： A semiconductor device including a connecting structure includes an edge region, a first trench and a second trench running toward the edge region, a first electrode within the first trench, and a second electrode within the second trench, the first and second electrodes being arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches, and the first electrode extending, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region.

摘要翻译： 包括连接结构的半导体器件包括边缘区域，朝向边缘区域延伸的第一沟槽和第二沟槽，第一沟槽内的第一电极和第二沟槽内的第二电极，第一和第二电极被布置在 相对于沟槽内的电子器件的基板的主表面的相同的电极平面，并且在第一沟槽的边缘区域侧端延伸的第一电极比第二电极延伸到边缘区域延伸，在 第二沟槽的边缘区域侧端部朝向边缘区域。

公开(公告)号：US07615847B2

公开(公告)日：2009-11-10

申请号：US11690494

申请日：2007-03-23

申请人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

发明人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

IPC分类号： H01L29/861

CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/7813

摘要： A semiconductor component having a semiconductor body having first and second semiconductor regions of a first conduction type, and a third semiconductor region of a second conduction type, which is complementary to the first conduction type. The second semiconductor region is arranged between the first and third semiconductor region and together with the first semiconductor region forms a first junction region and together with the third semiconductor region forms a second junction region. In the second semiconductor region the dopant concentration is lower than the dopant concentration in the first semiconductor region. The dopant concentration in the second semiconductor region along a straight connecting line between the first and third semiconductor regions is inhomogeneous and has at least one minimum between the first and second junction regions, wherein the minimum is at a distance from the first and second junction regions.

摘要翻译： 一种半导体元件，具有半导体本体，该半导体本体具有第一导电类型的第一和第二半导体区域以及与第一导电类型互补的第二导电类型的第三半导体区域。 第二半导体区域布置在第一和第三半导体区域之间并与第一半导体区域一起形成第一结区域，并与第三半导体区域一起形成第二结区域。 在第二半导体区域中，掺杂剂浓度低于第一半导体区域中的掺杂剂浓度。 沿着第一和第三半导体区域之间的直连接线的第二半导体区域中的掺杂剂浓度是不均匀的，并且在第一和第二结区域之间具有至少一个最小值，其中最小值距离第一和第二接合区域 。

公开(公告)号：US20090218621A1

公开(公告)日：2009-09-03

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/78 ,  H01L27/06 ,  H01L29/739

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

摘要翻译： 具有漂移区域和漂移控制区域的半导体部件。 一个实施例包括半导体本体中具有第一导电类型的漂移区的半导体本体。 由半导体材料组成的漂移控制区域至少部分地布置成与半导体本体中的漂移区域相邻。 在漂移区域和漂移控制区域之间布置积累电介质。

公开(公告)号：US20080230833A1

公开(公告)日：2008-09-25

申请号：US11690494

申请日：2007-03-23

申请人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

发明人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/7813

摘要： A semiconductor component having a semiconductor body having first and second semiconductor regions of a first conduction type, and a third semiconductor region of a second conduction type, which is complementary to the first conduction type. The second semiconductor region is arranged between the first and third semiconductor region and together with the first semiconductor region forms a first junction region and together with the third semiconductor region forms a second junction region. In the second semiconductor region the dopant concentration is lower than the dopant concentration in the first semiconductor region. The dopant concentration in the second semiconductor region along a straight connecting line between the first and third semiconductor regions is inhomogeneous and has at least one minimum between the first and second junction regions, wherein the minimum is at a distance from the first and second junction regions.

摘要翻译： 一种半导体元件，具有半导体本体，该半导体本体具有第一导电类型的第一和第二半导体区域以及与第一导电类型互补的第二导电类型的第三半导体区域。 第二半导体区域布置在第一和第三半导体区域之间并与第一半导体区域一起形成第一结区域，并与第三半导体区域一起形成第二结区域。 在第二半导体区域中，掺杂剂浓度低于第一半导体区域中的掺杂剂浓度。 沿着第一和第三半导体区域之间的直连接线的第二半导体区域中的掺杂剂浓度是不均匀的，并且在第一和第二结区域之间具有至少一个最小值，其中最小值距离第一和第二接合区域 。

公开(公告)号：US20080128803A1

公开(公告)日：2008-06-05

申请号：US11947552

申请日：2007-11-29

申请人： Franz Hirler ,  Markus Zundel

发明人： Franz Hirler ,  Markus Zundel

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/945

摘要： A connecting structure for an electronic device includes an edge region of the device, a first trench and a second trench running toward the edge region, a first electrode within the first trench, and a second electrode within the second trench, the first and second electrodes being arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches, and the first electrode extending, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region.

摘要翻译： 电子设备的连接结构包括器件的边缘区域，朝向边缘区域延伸的第一沟槽和第二沟槽，第一沟槽内的第一电极和第二沟槽内的第二电极，第一和第二电极 相对于沟槽内的电子器件的基板的主表面而布置在相同的电极平面中，并且在第一沟槽的边缘区域侧端部延伸的第一电极比第二电极更向边缘区域延伸 在第二沟槽的边缘区域侧端部延伸到边缘区域。