摘要:
The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.
摘要:
The present invention provides for a process for preparing racemic methyl 6,6-dimethyl-3-azabicyclo[3,1,0]hexane-2-carboxylate, its corresponding salt: (1R, 2S, 5S)-methyl 6,6-dimethyl-3-azabicyclo[3,1,0]hexane-2-carboxylate di-p-toluoyl-D-tartaric acid (“D-DTTA”) salt or a (1S, 2R, 5R)-methyl 6,6-dimethyl-3-azabicyclo[3,1,0]hexane-2-carboxylate di-p-toluoyl-L-tartaric acid salt (“L-DTTA”) in a high enantiomeric excess. This invention also provides for a process for preparing a (1R, 2S, 5S)-methyl 6,6-dimethyl-3-azabicyclo[3,1,0]hexane-2-carboxylate dibenzoyl-D-tartaric acid (“D-DBTA”) salt or a (1S, 2R, 5R)-methyl 6,6-dimethyl-3-azabicyclo[3,1,0]hexane-2-carboxylate L-tartaric acid (“L-DBTA”) salt in a high enantiomeric excess. Further, this invention provides a process for preparing intermediates II, IIB, III, IV, IV salt, V, VI, and VII.
摘要:
In one embodiment, the present application relates to a process of making a compound of formula I. and to certain intermediate compounds that are made within the process of making the compound of formula I.
摘要:
Quartz glass components for use in semiconductor manufacture are produced by mechanically machining the surface of a quartz glass blank so as to produce an initial average surface roughness Ra,0. The thus machined component surface is then cleaned in an etching solution. The invention relates to the optimisation of particle formation on such components, during the first intended use already. It is proposed to produce an initial average surface roughness Ra,0 of at least 0.2 μm by mechanical machining, and to adjust etching intensity and duration so that an actual etching depth of at least 10 μm is achieved. A quartz glass component produced by this process for use in semiconductor manufacture is characterised in that it comprises, before its first intended use, a surface produced by mechanical machining and etching having an etched structure with an average surface roughness Ra,1 ranging from 0.6 μm to 8 μm, and in that a weight loss of less than 0.4 μg/(mm2×min) which is substantially constant in time is achieved when etching the component with a 10% solution of hydrofluoric acid.
摘要翻译:用于半导体制造的石英玻璃组件通过机械加工石英玻璃坯料的表面以产生初始平均表面粗糙度R a a 0而制造。 然后将这样加工的部件表面在蚀刻溶液中清洁。 本发明涉及在首次使用期间对这些组分上的颗粒形成的优化。 提出通过机械加工产生至少0.2μm的初始平均表面粗糙度R a a 0,并且调整蚀刻强度和持续时间,使得实现至少10μm的实际蚀刻深度 。 通过该方法制造的用于半导体制造的石英玻璃组分的特征在于,其在其首次使用之前包括通过机械加工和蚀刻制备的表面,其具有平均表面粗糙度R a a, sub>0.6μm至8μm之间,并且当用一个或多个元件蚀刻该组件时,实现了时间基本上恒定的小于0.4mug /(mm×2×min)的重量损失 10%氢氟酸溶液。
摘要:
In one embodiment, the present application relates to a process of making a compound of formula I. and to certain intermediate compounds that are made within the process of making the compound of formula I.
摘要:
Photoluminescence-based methods are presented for facilitating alignment of wafers during metallisation in the manufacture of photovoltaic cells with selective emitter structures, and in particular for visualising the selective emitter structure prior to metallisation. In preferred forms the method is performed in-line, with each wafer inspected after formation of the selective emitter structure to identify its location or orientation. The information gained can also be used to reject defective wafers from the process line or to identify a systematic fault or inaccuracy with the process used to form the patterned emitter structure. Each wafer can additionally be inspected via photoluminescence imaging after metallisation, to determine whether the metal contacts have been correctly positioned on the selective emitter structure. The information gained after metallisation can also be used to provide feedback to the upstream process steps.
摘要:
A configuration of a camshaft phaser (1), having a drive sprocket (2), a stator (3) and a rotor (4), the hydraulic channels (5) and (14) being formed by contact surfaces (7) of the axially contiguous components, such as the drive sprocket (2), the stator (3) and the rotor (4), as well as by recesses (6).
摘要:
A camshaft adjuster for an internal combustion engine of a motor vehicle, including a stator which can be driven by a crankshaft of an internal combustion engine and is located radially on the outside, a rotor which is non-rotatably connected to a camshaft and located radially on the inside, working chambers which are disposed between the rotor and stator and can be subjected to a pressure such that the rotational position of the rotor relative to the stator can be varied, and at least one sealing cover which laterally delimits the working chambers and rests against the stator and/or rotor. The sealing cover, stator and/or rotor have a convex, concave or conical contact surface, and the sealing cover can be elastically deformed by the attachment via the contact surface such that it rests against the stator and/or rotor with an increased sealing force as a result of elastic deformation.
摘要:
Methods are presented for analysing semiconductor materials (8), and silicon photovoltaic cells and cell precursors in particular, using imaging of photoluminescence (12) generated with high intensity illumination (16). The high photoluminescence signal levels (16) obtained with such illumination (30) enable the acquisition of images from moving samples with minimal blurring. Certain material defects of interest to semiconductor device manufacturers, especially cracks, appear sharper under high intensity illumination. In certain embodiments images of photoluminescence generated with high and low intensity illumination are compared to highlight selected material properties or defects.
摘要:
A device for variably adjusting the control times of gas-exchange valves of an internal combustion engine. The device has a drive input element and a drive output element, The drive input element is placed in driving connection with a crankshaft of the internal combustion engine, the drive output element is arranged so as to be pivotable with respect to the drive input element, and the device is fastened to a camshaft which has a hollow shaft and an inner shaft which is arranged concentrically with respect to the hollow shaft. An improved mounting arrangement of the concentrically arranged shafts with respect to one another is proposed.