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164 条记录 (耗时 0.037 秒)

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE
    41.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE 审中-公开
    磁电元件和磁记忆装置

    公开(公告)号：US20070096229A1

    公开(公告)日：2007-05-03

    申请号：US11551868

    申请日：2006-10-23

    申请人： Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Masahiko Nakayama

    发明人： Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Masahiko Nakayama

    IPC分类号： H01L43/00

    CPC分类号： H01L43/10 ,  G11C11/16

    摘要： A magnetoresistive element includes a magnetic recording layer which records information as a magnetization direction changes upon supplying a bidirectional current in an out-of-plane direction, a magnetic reference layer which has a fixed magnetization direction, and a nonmagnetic layer which is provided between the magnetic recording layer and the magnetic reference layer. The magnetic recording layer includes an interface magnetic layer which is provided in contact with the nonmagnetic layer and has a first magnetic anisotropy energy, and a magnetic stabilizing layer which has a second magnetic anisotropy energy higher than the first magnetic anisotropy energy.

    摘要翻译： 磁阻元件包括磁记录层，该磁记录层在沿面外方向提供双向电流时记录磁化方向变化的信息，具有固定的磁化方向的磁性参考层和设置在磁性方向之间的非磁性层 磁记录层和磁参考层。 磁记录层包括与非磁性层接触并具有第一磁各向异性能的界面磁性层和具有高于第一磁各向异性能的第二磁各向异性能的磁稳定层。

    Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc
    43.
    发明授权
    Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc 有权
    具有含有硼和选自Ca，Mg，Sr，Ba，Ti和Sc的元素的中间氧化物层的磁阻效应元件

    公开(公告)号：US07920361B2

    公开(公告)日：2011-04-05

    申请号：US11844069

    申请日：2007-08-23

    申请人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11B5/39

    CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.

    摘要翻译： 可以提供具有低电流（RA）和高TMR比的低电流来反向磁化方向的磁阻效应元件。 磁阻效应元件包括：膜堆叠，其包括磁化自由层，其包括其中磁化方向可变的磁性层，包括其中磁化方向被钉扎的磁性层的磁化固定层，以及设置在磁化自由度之间的中间层 层和磁化固定层，中间层是含有硼（B）的氧化物和选自Ca，Mg，Sr，Ba，Ti和Sc的元素。 通过中间层在磁化钉扎层和磁化自由层之间双向施加电流，使得无磁化层的磁化是可逆的。

    MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY
    45.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY 有权
    磁电效应元件和磁阻随机存取存储器

    公开(公告)号：US20080291585A1

    公开(公告)日：2008-11-27

    申请号：US11844069

    申请日：2007-08-23

    申请人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11B5/33

    CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.

    摘要翻译： 可以提供具有低电流（RA）和高TMR比的低电流来反向磁化方向的磁阻效应元件。 磁阻效应元件包括：膜堆叠，其包括磁化自由层，其包括其中磁化方向可变的磁性层，包括其中磁化方向被钉扎的磁性层的磁化固定层，以及设置在磁化自由度之间的中间层 层和磁化固定层，中间层是含有硼（B）的氧化物和选自Ca，Mg，Sr，Ba，Ti和Sc的元素。 通过中间层在磁化钉扎层和磁化自由层之间双向施加电流，使得无磁化层的磁化是可逆的。

    Magnetoresistance effect element and magnetoresistive random access memory using the same
    46.
    发明授权
    Magnetoresistance effect element and magnetoresistive random access memory using the same 有权
    磁阻效应元件和使用其的磁阻随机存取存储器

    公开(公告)号：US07924607B2

    公开(公告)日：2011-04-12

    申请号：US12047749

    申请日：2008-03-13

    申请人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11C11/00

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

    摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.

    摘要翻译： 磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。 第一磁性层具有不变的磁化方向。 第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素， 和选自V，Cr和Mn中的至少一种元素。 间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。 流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。

    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY USING THE SAME
    47.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY USING THE SAME 有权
    磁阻效应元件和磁阻随机存取存储器

    公开(公告)号：US20080253174A1

    公开(公告)日：2008-10-16

    申请号：US12047749

    申请日：2008-03-13

    申请人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11C11/00 ,  H01L29/82

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

    摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.

    摘要翻译： 磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。 第一磁性层具有不变的磁化方向。 第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素， 和选自V，Cr和Mn中的至少一种元素。 间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。 流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    50.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 审中-公开
    磁性元件和磁记忆

    公开(公告)号：US20070297220A1

    公开(公告)日：2007-12-27

    申请号：US11626042

    申请日：2007-01-23

    申请人： Masatoshi YOSHIKAWA ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi YOSHIKAWA ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/123 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/226 ,  H01L43/08

    摘要： A magnetoresistive includes a first magnetic reference layer having a fixed magnetization direction, a magnetic free layer having a magnetization direction which is changeable by being supplied with spin polarized electrons, a second magnetic reference layer having a fixed magnetization direction, a first intermediate layer provided between the first magnetic reference layer and the magnetic free layer, and a second intermediate layer provided between the magnetic free layer and the second magnetic reference layer. The magnetic free layer and the first magnetic reference layer have directions of easy magnetization perpendicular or parallel to an in-plane direction. The first magnetic reference layer and the second magnetic reference layer have directions of easy magnetization perpendicular to each other.

    摘要翻译： 磁阻包括具有固定磁化方向的第一磁性参考层，具有通过提供自旋极化电子而可变化的磁化方向的磁性自由层，具有固定磁化方向的第二磁性参考层，设置在第一磁性参考层之间的第一中间层 第一磁性参考层和无磁性层，以及设置在磁性自由层和第二磁性参考层之间的第二中间层。 磁性自由层和第一磁性参考层具有垂直于或平行于面内方向的容易磁化的方向。 第一磁参考层和第二磁参考层具有彼此垂直的易磁化方向。