摘要:
An image processor is connectable with a storing medium storing at least one set of still image data each corresponding to a still image and at least one set of moving image data each including a plurality of sets of frame image data corresponding to a plurality of frame images. An extracting unit extracts at least one set of frame image data from the plurality of frame image data sets of each moving image data set. A layout order determining unit determines a layout order of still images each corresponding to the still image data sets and frame images each corresponding to the frame image data set extracted by the extracting unit according to a predetermined criterion. An output unit outputs an image list with the still images and the frame images laid out therein in the layout order determined by the layout order determining unit.
摘要:
An image processing device includes a first image inputting unit, a second image inputting unit, an image processing unit, and a restriction control unit. The first image inputting that inputs a first image. The second image inputting unit inputs a second image. The image processing unit performs a prescribed process on the second image based on the first image. The restriction control unit is configured to restrict the prescribed process based on information of the first image.
摘要:
An image processing device includes an original image inputting unit, an original-image characteristic quantity data determining unit, an outputting unit, a selecting unit, and a correcting unit. The original image inputting unit is configured so as to be capable of inputting an original image. The original-image characteristic quantity data determining unit determines original-image characteristic quantity data expressing a characteristic of the original image inputted by the original image inputting unit. The outputting unit outputs at least one set of image data or indication concerning at least one set among a plurality of sets of sample-image characteristic quantity data. The selecting unit enables a user to select one set of image data among the at least one set of image data. The correcting unit corrects the original image based on one set of sample-image characteristic quantity data corresponding to the selected set of image data and the original-image characteristic quantity data.
摘要:
According to one embodiment, a method is disclosed for manufacturing a semiconductor device. A side face parallel to a channel direction of a plurality of gate electrodes provided above a semiconductor substrate is included as a part of an inner wall of an isolation groove provided between the adjacent gate electrodes. The method can include forming a first isolation groove penetrating through a conductive film serving as the gate electrode to reach the semiconductor substrate. The method can include forming a protection film covering a side wall of the first isolation groove including a side face of the gate electrode. The method can include forming a second isolation groove by etching the semiconductor substrate exposed to a bottom surface of the first isolation groove. The method can include oxidizing an inner surface of the second isolation groove provided on each of both sides of the gate electrode to form first insulating films, which are connected to each other under the gate electrode. In addition, the method can include filling an inside of the first isolation groove and an inside of the second isolation groove with a second insulating film.
摘要:
According to one embodiment, a nonvolatile memory device includes a substrate, first and second tunnel insulating films, first and second floating gate electrodes, an intergate insulating film and a control gate electrode. The substrate has first and second active regions isolated from each other by an element isolation trench. The first and second tunnel insulating films are located in the first and second active regions, respectively. The first and second floating gate electrodes are located on the first and second tunnel insulating films, respectively. The intergate insulating film includes a first insulating layer of a first insulating material, an electron trap layer of a second insulating material on the first insulating layer, and a second insulating layer of the first insulating material on the electron trap layer. The control gate electrode is located on the intergate insulating film.
摘要:
A storage portion stores, in association with first pixel values, table values including either gamma-corrected values obtained by performing gamma correction on the first pixel values using a predetermined reflectance component or second pixel values calculated based both on the gamma-corrected values and on the first pixel values. A pixel-value generating portion includes an extracting portion and a determining portion. The extracting portion extracts at least one of the table values corresponding to a pixel value of a subject pixel. The determining portion determines a pixel value of an output image based on the at least one of the table values extracted by the extracting portion. The predetermined reflectance component is the reflectance component calculated by the reflectance-component calculating portion when the pixel value of the subject pixel is substantially identical with the average luminance of the peripheral pixels.
摘要:
A gas exhaust unit evacuates the inside of a vacuum transfer chamber at a constant exhaust rate. An gas exhaust valve is kept normally open, and a purge gas (N2 gas) is supplied from a purge gas supply source into the vacuum transfer chamber via a mass flow controller (MFC) and an opening/closing valve. A main control unit controls a pressure in the vacuum transfer chamber to be within a specified range through a flow rate set value for the MFC while monitoring a pressure in the vacuum transfer chamber via a vacuum gauge. The main control unit determines occurrence of abnormality when the pressure exceeds a specified upper limit and then takes such actions as changing a flow rate set value for the MFC, giving an alarm and stopping the operation of a vacuum processing apparatus.
摘要:
A semiconductor memory device according to an embodiment of the present invention includes a substrate, a gate insulator formed on the substrate and serving as an F-N (Fowler-Nordheim) tunneling film, a first floating gate formed on the gate insulator, a first intergate insulator formed on the first floating gate and serving as an F-N tunneling film, a second floating gate formed on the first intergate insulator, a second intergate insulator formed on the second floating gate and serving as a charge blocking film, and a control gate formed on the second intergate insulator.
摘要:
An image-processing method includes: subjecting original image data indicative of an original image to a selective noise reduction by reducing noise from pixel data that meets a prescribed condition among all the pixel data in the original image data; and performing a first calibration to calibrate contrast of a backlight region of the selectively-noise-reduced original image data to generate an output image by determining a first pixel component and a second pixel component for each pixel data in the selectively-noise-reduced image data, by increasing contrast of the second pixel component, and by recreating pixel data based on the first pixel component and the calibrated second pixel component.
摘要:
A semiconductor device of an embodiment includes a substrate and a plurality of fins formed on the substrate. The plurality of fins is arranged so that a first distance and a second distance narrower than the first distance are repeated. In addition, the plurality of fins include a semiconductor region in which an impurity concentration of lower portions of side surfaces facing each other in sides forming the first distance is higher than an impurity concentration of lower portions of side surfaces facing each other in sides forming the second distance.