Image processor
    41.
    发明授权
    Image processor 有权
    图像处理器

    公开(公告)号:US08411311B2

    公开(公告)日:2013-04-02

    申请号:US12414537

    申请日:2009-03-30

    IPC分类号: G06K15/00

    摘要: An image processor is connectable with a storing medium storing at least one set of still image data each corresponding to a still image and at least one set of moving image data each including a plurality of sets of frame image data corresponding to a plurality of frame images. An extracting unit extracts at least one set of frame image data from the plurality of frame image data sets of each moving image data set. A layout order determining unit determines a layout order of still images each corresponding to the still image data sets and frame images each corresponding to the frame image data set extracted by the extracting unit according to a predetermined criterion. An output unit outputs an image list with the still images and the frame images laid out therein in the layout order determined by the layout order determining unit.

    摘要翻译: 图像处理器可与存储有至少一组静态图像数据的存储介质连接,所述至少一组静态图像数据对应于静止图像,以及至少一组运动图像数据,每个运动图像数据包括对应于多个帧图像的多组帧图像数据 。 提取单元从每个运动图像数据集的多个帧图像数据集中提取至少一组帧图像数据。 布局顺序确定单元根据预定标准确定每个对应于静止图像数据集的静止图像的布局顺序和每个与由提取单元提取的帧图像数据集相对应的帧图像。 输出单元以由布局顺序确定单元确定的布局顺序输出其中布置有静止图像和帧图像的图像列表。

    Image processing device capable of preventing needless printing
    42.
    发明授权
    Image processing device capable of preventing needless printing 有权
    能够防止不必要的打印的图像处理装置

    公开(公告)号:US08284417B2

    公开(公告)日:2012-10-09

    申请号:US12202986

    申请日:2008-09-02

    CPC分类号: H04N1/6075

    摘要: An image processing device includes a first image inputting unit, a second image inputting unit, an image processing unit, and a restriction control unit. The first image inputting that inputs a first image. The second image inputting unit inputs a second image. The image processing unit performs a prescribed process on the second image based on the first image. The restriction control unit is configured to restrict the prescribed process based on information of the first image.

    摘要翻译: 图像处理装置包括第一图像输入单元,第二图像输入单元,图像处理单元和限制控制单元。 输入第一个图像的第一个图像输入。 第二图像输入单元输入第二图像。 图像处理单元基于第一图像对第二图像执行规定的处理。 限制控制单元被配置为基于第一图像的信息来限制规定的处理。

    Image processing device outputting image for selecting sample image for image correction
    43.
    发明授权
    Image processing device outputting image for selecting sample image for image correction 有权
    图像处理装置输出用于选择用于图像校正的样本图像的图像

    公开(公告)号:US08174731B2

    公开(公告)日:2012-05-08

    申请号:US12202872

    申请日:2008-09-02

    IPC分类号: H04N1/40

    摘要: An image processing device includes an original image inputting unit, an original-image characteristic quantity data determining unit, an outputting unit, a selecting unit, and a correcting unit. The original image inputting unit is configured so as to be capable of inputting an original image. The original-image characteristic quantity data determining unit determines original-image characteristic quantity data expressing a characteristic of the original image inputted by the original image inputting unit. The outputting unit outputs at least one set of image data or indication concerning at least one set among a plurality of sets of sample-image characteristic quantity data. The selecting unit enables a user to select one set of image data among the at least one set of image data. The correcting unit corrects the original image based on one set of sample-image characteristic quantity data corresponding to the selected set of image data and the original-image characteristic quantity data.

    摘要翻译: 图像处理装置包括原始图像输入单元,原始图像特征量数据确定单元,输出单元,选择单元和校正单元。 原始图像输入单元被配置为能够输入原始图像。 原始图像特征量数据确定单元确定表示由原始图像输入单元输入的原始图像的特征的原始图像特征量数据。 输出单元在多组采样图像特征量数据中输出至少一组图像数据或关于至少一组的指示。 所述选择单元使得用户能够在所述至少一组图像数据中选择一组图像数据。 校正单元基于与所选择的图像数据组和原始图像特征量数据相对应的一组采样图像特征量数据来校正原始图像。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    44.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20120018783A1

    公开(公告)日:2012-01-26

    申请号:US13117525

    申请日:2011-05-27

    IPC分类号: H01L29/772 H01L21/28

    摘要: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. A side face parallel to a channel direction of a plurality of gate electrodes provided above a semiconductor substrate is included as a part of an inner wall of an isolation groove provided between the adjacent gate electrodes. The method can include forming a first isolation groove penetrating through a conductive film serving as the gate electrode to reach the semiconductor substrate. The method can include forming a protection film covering a side wall of the first isolation groove including a side face of the gate electrode. The method can include forming a second isolation groove by etching the semiconductor substrate exposed to a bottom surface of the first isolation groove. The method can include oxidizing an inner surface of the second isolation groove provided on each of both sides of the gate electrode to form first insulating films, which are connected to each other under the gate electrode. In addition, the method can include filling an inside of the first isolation groove and an inside of the second isolation groove with a second insulating film.

    摘要翻译: 根据一个实施例,公开了一种用于制造半导体器件的方法。 作为设置在相邻的栅电极之间的隔离槽的内壁的一部分,包括平行于设置在半导体基板上方的多个栅电极的沟道方向的侧面。 该方法可以包括形成穿过用作栅电极的导电膜的第一隔离槽,以到达半导体衬底。 该方法可以包括形成覆盖包括栅电极的侧面的第一隔离槽的侧壁的保护膜。 该方法可以包括通过蚀刻暴露于第一隔离槽的底表面的半导体衬底来形成第二隔离槽。 该方法可以包括氧化设置在栅电极的两侧的每一侧上的第二隔离槽的内表面,以形成第一绝缘膜,它们彼此连接在栅极下方。 此外,该方法可以包括用第二绝缘膜填充第一隔离槽的内部和第二隔离槽的内部。

    NONVOLATILE MEMORY DEVICE
    45.
    发明申请
    NONVOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号:US20120007163A1

    公开(公告)日:2012-01-12

    申请号:US13052531

    申请日:2011-03-21

    IPC分类号: H01L29/788

    CPC分类号: H01L29/7883 H01L27/11521

    摘要: According to one embodiment, a nonvolatile memory device includes a substrate, first and second tunnel insulating films, first and second floating gate electrodes, an intergate insulating film and a control gate electrode. The substrate has first and second active regions isolated from each other by an element isolation trench. The first and second tunnel insulating films are located in the first and second active regions, respectively. The first and second floating gate electrodes are located on the first and second tunnel insulating films, respectively. The intergate insulating film includes a first insulating layer of a first insulating material, an electron trap layer of a second insulating material on the first insulating layer, and a second insulating layer of the first insulating material on the electron trap layer. The control gate electrode is located on the intergate insulating film.

    摘要翻译: 根据一个实施例,非易失性存储器件包括衬底,第一和第二隧道绝缘膜,第一和第二浮栅电极,栅间绝缘膜和控制栅电极。 衬底具有通过元件隔离沟槽彼此隔离的第一和第二有源区。 第一和第二隧道绝缘膜分别位于第一和第二有源区中。 第一和第二浮栅电极分别位于第一和第二隧道绝缘膜上。 隔间绝缘膜包括第一绝缘材料的第一绝缘层,第一绝缘层上的第二绝缘材料的电子陷阱层和电子陷阱层上的第一绝缘材料的第二绝缘层。 控制栅电极位于隔间绝缘膜上。

    Image processing device capable of performing retinex process at high speed
    46.
    发明授权
    Image processing device capable of performing retinex process at high speed 有权
    能够高速进行retinex处理的图像处理装置

    公开(公告)号:US08040409B2

    公开(公告)日:2011-10-18

    申请号:US11931213

    申请日:2007-10-31

    IPC分类号: H04N5/202 H04N9/68

    摘要: A storage portion stores, in association with first pixel values, table values including either gamma-corrected values obtained by performing gamma correction on the first pixel values using a predetermined reflectance component or second pixel values calculated based both on the gamma-corrected values and on the first pixel values. A pixel-value generating portion includes an extracting portion and a determining portion. The extracting portion extracts at least one of the table values corresponding to a pixel value of a subject pixel. The determining portion determines a pixel value of an output image based on the at least one of the table values extracted by the extracting portion. The predetermined reflectance component is the reflectance component calculated by the reflectance-component calculating portion when the pixel value of the subject pixel is substantially identical with the average luminance of the peripheral pixels.

    摘要翻译: 存储部分与第一像素值相关联地存储包括通过使用基于伽马校正值计算的预定反射分量或第二​​像素值对第一像素值执行伽马校正而获得的伽马校正值的表值,并且基于伽马校正值 第一个像素值。 像素值生成部分包括提取部分和确定部分。 提取部分提取与被摄体像素的像素值相对应的表值中的至少一个。 确定部分基于由提取部分提取的表值中的至少一个来确定输出图像的像素值。 预定的反射率分量是当被摄体像素的像素值与周边像素的平均亮度基本相同时由反射分量计算部分计算的反射分量。

    Vacuum processing apparatus and method
    47.
    发明授权
    Vacuum processing apparatus and method 失效
    真空处理装置及方法

    公开(公告)号:US07993458B2

    公开(公告)日:2011-08-09

    申请号:US12169660

    申请日:2008-07-09

    IPC分类号: C23C16/00 H01L21/306 C23F1/00

    摘要: A gas exhaust unit evacuates the inside of a vacuum transfer chamber at a constant exhaust rate. An gas exhaust valve is kept normally open, and a purge gas (N2 gas) is supplied from a purge gas supply source into the vacuum transfer chamber via a mass flow controller (MFC) and an opening/closing valve. A main control unit controls a pressure in the vacuum transfer chamber to be within a specified range through a flow rate set value for the MFC while monitoring a pressure in the vacuum transfer chamber via a vacuum gauge. The main control unit determines occurrence of abnormality when the pressure exceeds a specified upper limit and then takes such actions as changing a flow rate set value for the MFC, giving an alarm and stopping the operation of a vacuum processing apparatus.

    摘要翻译: 排气单元以恒定的排气速率排出真空传送室的内部。 气体排气阀保持常开,通过质量流量控制器(MFC)和打开/关闭阀将净化气体(N 2气)从净化气体供应源供应到真空传送室。 主控制单元通过真空传送室中的压力通过真空计监视真空传送室中的压力,将真空传送室中的压力通过MFC的流量设定值控制在规定范围内。 主控制单元在压力超过规定的上限的情况下,判定异常的发生,然后采取改变MFC的流量设定值,报警并停止真空处理装置的动作等动作。

    SEMICONDUCTOR MEMORY DEVICE
    48.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权
    半导体存储器件

    公开(公告)号:US20110122698A1

    公开(公告)日:2011-05-26

    申请号:US12719420

    申请日:2010-03-08

    IPC分类号: G11C16/04 H01L29/792

    摘要: A semiconductor memory device according to an embodiment of the present invention includes a substrate, a gate insulator formed on the substrate and serving as an F-N (Fowler-Nordheim) tunneling film, a first floating gate formed on the gate insulator, a first intergate insulator formed on the first floating gate and serving as an F-N tunneling film, a second floating gate formed on the first intergate insulator, a second intergate insulator formed on the second floating gate and serving as a charge blocking film, and a control gate formed on the second intergate insulator.

    摘要翻译: 根据本发明的实施例的半导体存储器件包括:衬底,形成在衬底上并用作FN(Fowler-Nordheim)隧穿膜的栅极绝缘体,形成在栅极绝缘体上的第一浮栅,第一栅极绝缘体 形成在第一浮栅上并用作FN隧道膜,形成在第一栅极绝缘体上的第二浮栅,形成在第二浮栅上并用作电荷阻挡膜的第二栅极绝缘体,以及形成在第一浮栅上的控制栅 第二隔间绝缘子。

    Image-processing method
    49.
    发明授权
    Image-processing method 有权
    图像处理方法

    公开(公告)号:US07916936B2

    公开(公告)日:2011-03-29

    申请号:US11512262

    申请日:2006-08-30

    申请人: Masaki Kondo

    发明人: Masaki Kondo

    IPC分类号: G06K9/00 G06K9/40 H04N5/217

    摘要: An image-processing method includes: subjecting original image data indicative of an original image to a selective noise reduction by reducing noise from pixel data that meets a prescribed condition among all the pixel data in the original image data; and performing a first calibration to calibrate contrast of a backlight region of the selectively-noise-reduced original image data to generate an output image by determining a first pixel component and a second pixel component for each pixel data in the selectively-noise-reduced image data, by increasing contrast of the second pixel component, and by recreating pixel data based on the first pixel component and the calibrated second pixel component.

    摘要翻译: 一种图像处理方法包括:通过在原始图像数据中的所有像素数据中减少满足规定条件的像素数据的噪声来对表示原始图像的原始图像数据进行选择性降噪; 以及执行第一校准以校准所述选择性降噪的原始图像数据的背光区域的对比度,以通过为所述选择性噪声降低的图像中的每个像素数据确定第一像素分量和第二像素分量来生成输出图像 数据,通过增加第二像素分量的对比度,以及通过基于第一像素分量和校准的第二像素分量重建像素数据。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    50.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20110068401A1

    公开(公告)日:2011-03-24

    申请号:US12881415

    申请日:2010-09-14

    IPC分类号: H01L27/12 H01L21/84

    摘要: A semiconductor device of an embodiment includes a substrate and a plurality of fins formed on the substrate. The plurality of fins is arranged so that a first distance and a second distance narrower than the first distance are repeated. In addition, the plurality of fins include a semiconductor region in which an impurity concentration of lower portions of side surfaces facing each other in sides forming the first distance is higher than an impurity concentration of lower portions of side surfaces facing each other in sides forming the second distance.

    摘要翻译: 实施例的半导体器件包括基板和形成在基板上的多个翅片。 多个翅片被布置成使得比第一距离窄的第一距离和第二距离被重复。 另外,多个散热片包括半导体区域,其中在形成第一距离的侧面中彼此面对的侧面的下部的杂质浓度高于形成第一距离的侧面彼此相对的侧表面的下部的杂质浓度 第二距离。