公开(公告)号：US5831113A

公开(公告)日：1998-11-03

申请号：US896228

申请日：1997-07-17

申请人： Hiroshi Umino ,  Kozo Imura ,  Takeshi Koyama

发明人： Hiroshi Umino ,  Kozo Imura ,  Takeshi Koyama

IPC分类号： B01J8/18 ,  B01J8/24 ,  C07C68/00

CPC分类号： B01J8/24 ,  B01J8/1836 ,  C07C68/005 ,  B01J2208/00132 ,  B01J2208/00256 ,  B01J2208/00274 ,  Y10S159/03

摘要： A process for producing a carbonic acid diester, which comprises carrying out a reaction in a vapor phase of an alcohol, carbon monoxide and oxygen in the presence of a catalyst in a fluidized-bed reactor so that an oxidative carbonylation of the alcohol occurs, thereby obtaining a carbonic acid diester, wherein a heat of reaction is removed by the latent heat of vaporization of the alcohol as a raw material. In the process, for example, either at least part of the alcohol may be directly fed in liquid phase into the fluidized bed or cooling pipes are disposed in the fluidized bed and at least part of the alcohol is introduced in liquid phase into the cooling pipes as a heat transfer medium so that the liquid alcohol is vaporized and fed into the fluidized-bed reactor. Carbon monoxide may be introduced together with the liquid alcohol into the cooling pipes. A process of high energy efficiency realizing an effective utilization of a heat of reaction and an apparatus there for are provided in the production of a carbonic acid diester in a vapor phase with the use of a fluidized-bed reactor.

摘要翻译： 一种碳酸二酯的制造方法，其包括在流化床反应器中在催化剂存在下，在醇，一氧化碳，氧气的气相中进行反应，从而发生醇的氧化羰基化反应 获得碳酸二酯，其中通过作为原料的醇的蒸发潜热来除去反应热。 在该过程中，例如，至少部分醇可以直接以液相进料到流化床中，或者将冷却管设置在流化床中，并且将至少部分醇以液相引入冷却管 作为传热介质，使得液态醇被蒸发并进料到流化床反应器中。 一氧化碳可与液体醇一起引入冷却管。 在使用流化床反应器的气相中生产碳酸二酯的过程中，提供了一种高能效实现有效利用反应热的方法及其装置。

公开(公告)号：US5146025A

公开(公告)日：1992-09-08

申请号：US478869

申请日：1990-02-12

申请人： Takeshi Koyama ,  Takefumi Abe

发明人： Takeshi Koyama ,  Takefumi Abe

IPC分类号： C07C15/24 ,  C07C43/205 ,  C07C43/215 ,  C07C65/11 ,  C07C65/24 ,  C08G63/60

CPC分类号： C07C43/205 ,  C07C15/24 ,  C07C43/215 ,  C07C65/11 ,  C07C65/24 ,  C08G63/605

摘要： A compound represented by the formula: ##STR1## and a compound represented by the formula: ##STR2## wherein R is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxy, which is an intermediate for producing the above compound (1) are disclosed.

公开(公告)号：US4707103A

公开(公告)日：1987-11-17

申请号：US828959

申请日：1986-02-12

申请人： Keiji Ikemori ,  Takeshi Koyama

发明人： Keiji Ikemori ,  Takeshi Koyama

IPC分类号： G02B15/177 ,  G02B23/14 ,  G03B3/00 ,  G03B13/08

CPC分类号： G02B15/177 ,  G02B23/145

摘要： An optical system of variable magnification including an image forming lens system having at least one optical member axially movable for varying the image magnification, and a light beam splitting device in the optical path of the lens system, the optical member and the splitting device being arranged to move simultaneously.

摘要翻译： 一种可变倍率的光学系统，包括具有至少一个光学构件的成像透镜系统，所述成像透镜系统具有轴向可移动以改变图像放大率;以及光束分离装置，在所述透镜系统的光路中，所述光学构件和所述分离装置被布置 同时移动

公开(公告)号：US4633291A

公开(公告)日：1986-12-30

申请号：US584506

申请日：1984-02-28

申请人： Takeshi Koyama

发明人： Takeshi Koyama

IPC分类号： H01L27/04 ,  H01L21/331 ,  H01L21/822 ,  H01L21/8222 ,  H01L23/522 ,  H01L27/06 ,  H01L27/07 ,  H01L29/73 ,  H01L29/72 ,  H01L27/02 ,  H01L29/06

CPC分类号： H01L27/0777 ,  H01L23/5222 ,  H01L2924/0002

摘要： An n-type region isolated by a p-type region is formed on a p-type substrate. Within the n-type region, in order to constitute an npn-transistor, an n.sup.+ region, a p-type region and an n.sup.+ region are formed. Within the n-type region, a p-type region is formed, and an insulating film and a metal layer are successively stacked on the p-type region to form an oxide film capacitor. The p-type region of the oxide film capacitor is in contact with the n.sup.+ region of the npn-transistor by means of a metal wiring. Within a p-type region of the oxide film capacitor, an n.sup.+ region is further formed. An additional npn-transistor may be formed by the n.sup.+ region, the p-type region and n-type region.

摘要翻译： 由p型区域隔离的n型区域形成在p型基板上。 在n型区域内，为了构成npn晶体管，形成n +区域，p型区域和n +区域。 在n型区域内形成p型区域，在p型区域依次层叠绝缘膜和金属层，形成氧化膜电容器。 氧化物膜电容器的p型区域通过金属布线与npn晶体管的n +区域接触。 在氧化物膜电容器的p型区域内，进一步形成n +区域。 另外的npn晶体管可以由n +区域，p型区域和n型区域形成。

公开(公告)号：US08665312B2

公开(公告)日：2014-03-04

申请号：US13312154

申请日：2011-12-06

申请人： Yoshinaga Kato ,  Takeshi Koyama

发明人： Yoshinaga Kato ,  Takeshi Koyama

IPC分类号： H04N7/15

CPC分类号： H04N7/15

摘要： When a refrained state is detected at a first transmission terminal, a transmission management system sends operation state information of the first transmission terminal, which is determined based on the refrained state of the first transmission terminal, to a second transmission terminal that may initiate communication with the first transmission terminal before the second transmission terminal starts communication with the first transmission terminal.

摘要翻译： 当在第一传输终端检测到拒绝状态时，传输管理系统将基于第一传输终端的被拒绝状态确定的第一传输终端的操作状态信息发送到可以发起与第一传输终端通信的第二传输终端 第二发送终端之前的第一发送终端开始与第一发送终端的通信。

公开(公告)号：US08373231B2

公开(公告)日：2013-02-12

申请号：US12709762

申请日：2010-02-22

申请人： Sukehiro Yamamoto ,  Takeshi Koyama

发明人： Sukehiro Yamamoto ,  Takeshi Koyama

IPC分类号： H01L23/62

CPC分类号： H01L29/41758 ,  H01L27/0266

摘要： Provided is a semiconductor device including an n-type metal oxide semiconductor transistor for electrostatic discharge protection including drain regions and source regions placed alternately with each other, and gate electrodes each placed between each of the drain regions and each of the source regions, in which: the first metal interconnects formed on the source regions are electrically connected to the second metal interconnect through constant size via-holes, and a ratio between the numbers of the via-holes arranged above each of the source regions is controlled to be less than four according to a distance from the ground potential supply line.

摘要翻译： 本发明提供一种半导体器件，其包括用于静电放电保护的n型金属氧化物半导体晶体管，其包括彼此交替地放置的漏极区域和源极区域，以及各自设置在每个漏极区域和每个源极区域之间的栅电极，其中 ：通过恒定尺寸的通孔，形成在源极区域上的第一金属互连件通过恒定尺寸的通孔电连接到第二金属互连件，并且布置在每个源极区域上方的通孔数量之间的比率被控制为小于4 根据与地电势线的距离。

公开(公告)号：US20120140022A1

公开(公告)日：2012-06-07

申请号：US13312154

申请日：2011-12-06

申请人： Yoshinaga KATO ,  Takeshi Koyama

发明人： Yoshinaga KATO ,  Takeshi Koyama

IPC分类号： H04N7/15

CPC分类号： H04N7/15

摘要： When a refrained state is detected at a first transmission terminal, a transmission management system sends operation state information of the first transmission terminal, which is determined based on the refrained state of the first transmission terminal, to a second transmission terminal that may initiate communication with the first transmission terminal before the second transmission terminal starts communication with the first transmission terminal.

摘要翻译： 当在第一传输终端检测到拒绝状态时，传输管理系统将基于第一传输终端的被拒绝状态确定的第一传输终端的操作状态信息发送到可以发起与第一传输终端通信的第二传输终端 第二发送终端之前的第一发送终端开始与第一发送终端的通信。

公开(公告)号：US20110255323A1

公开(公告)日：2011-10-20

申请号：US12977243

申请日：2010-12-23

申请人： Kanji Otsuka ,  Tsuneo Ito ,  Yoichi Sato ,  Masahiro Yoshida ,  Shigeru Yamamoto ,  Takeshi Koyama ,  Yuko Tanba ,  Yutaka Akiyama

发明人： Kanji Otsuka ,  Tsuneo Ito ,  Yoichi Sato ,  Masahiro Yoshida ,  Shigeru Yamamoto ,  Takeshi Koyama ,  Yuko Tanba ,  Yutaka Akiyama

IPC分类号： G11C5/06

CPC分类号： G06F13/4022 ,  G11C5/02 ,  G11C7/1006 ,  G11C2213/71

摘要： There is a problem that a bandwidth bottleneck occurs because a crossbar switch is used to cope with an increase in scale. In an example of a memory/logic conjugate system according to the present invention, a plurality of cluster memory chips each including a plurality of cluster memories 20 including basic cells 10 arranged in a cluster, the basic cell 10 including a memory circuit, and a controller chip that controls the plurality of cluster memories are three-dimensionally stacked, the plurality of cluster memories 20 located along the stacking direction of the plurality of cluster memory chips and the controller chip are electrically coupled to the controller chip via a multibus 11 including a through-via, an arbitrary one of the basic cells 10 is directly accessed through the multibus 11 from the controller chip so that truth value data is written therein, and whereby the arbitrary basic cell 10 is switched to a logic circuit as conjugate.

摘要翻译： 存在带宽瓶颈的问题，因为使用交叉开关来应对规模的增加。 在根据本发明的存储器/逻辑共轭系统的示例中，多个集群存储器芯片，每个集群存储器芯片包括多个集群存储器20，其包括布置在集群中的基本单元10，基本单元10包括存储器电路，以及 控制多个集群存储器的控制器芯片是三维堆叠的，沿着多个集群存储器芯片的堆叠方向定位的多个集群存储器20和控制器芯片经由多片11电连接到控制器芯片， 通孔中，任意一个基本单元10通过多轴11从控制器芯片直接访问，从而将真值数据写入其中，从而将任意的基本单元10切换到逻辑电路作为共轭。

公开(公告)号：US20100213549A1

公开(公告)日：2010-08-26

申请号：US12709762

申请日：2010-02-22

申请人： Sukehiro Yamamoto ,  Takeshi Koyama

发明人： Sukehiro Yamamoto ,  Takeshi Koyama

IPC分类号： H01L23/60 ,  H01L27/088

CPC分类号： H01L29/41758 ,  H01L27/0266

摘要： Provided is a semiconductor device including an n-type metal oxide semiconductor transistor for electrostatic discharge protection including drain regions and source regions placed alternately with each other, and gate electrodes each placed between each of the drain regions and each of the source regions, in which: the first metal interconnects formed on the source regions are electrically connected to the second metal interconnect through constant size via-holes, and a ratio between the numbers of the via-holes arranged above each of the source regions is controlled to be less than four according to a distance from the ground potential supply line.

摘要翻译： 本发明提供一种半导体器件，其包括用于静电放电保护的n型金属氧化物半导体晶体管，其包括彼此交替地放置的漏极区域和源极区域，以及各自设置在每个漏极区域和每个源极区域之间的栅电极，其中 ：通过恒定尺寸的通孔，形成在源极区域上的第一金属互连件通过恒定尺寸的通孔电连接到第二金属互连件，并且布置在每个源极区域上方的通孔数量之间的比率被控制为小于4 根据与地电势线的距离。

公开(公告)号：US20100193831A1

公开(公告)日：2010-08-05

申请号：US12678166

申请日：2008-09-22

申请人： Takashi Sato ,  Shuichi Ueno ,  Takeshi Koyama

发明人： Takashi Sato ,  Shuichi Ueno ,  Takeshi Koyama

IPC分类号： H01L23/29 ,  C08L63/00 ,  C08K5/13

CPC分类号： C08G59/24 ,  C08G59/226 ,  C08G59/42 ,  C08L63/00 ,  H01L33/56 ,  H01L51/5237 ,  H01L51/5246 ,  C08L2666/22

摘要： Provided are an epoxy resin composition including acid anhydrides (A) and epoxy resins (B), in which: (a) cyclohexane-1,2,4-tricarboxylic acid-1,2-anhydride accounts for 50 to 90 mass % of the acid anhydrides (A); (b) an alicyclic epoxy resin compound accounts for 30 to 90 mass % of the epoxy resins (B) and an epoxy resin compound represented by the following general formula (1) accounts for 10 to 50 mass % of the epoxy resins (B); and (c) contents of the acid anhydrides (A) and the epoxy resins (B) are such that a blending equivalent ratio between the acid anhydrides and the epoxy resins ranges from 0.4 to 0.7, a cured product of the composition, and a light-emitting diode. The epoxy resin composition has the following characteristics. That is, (1) the composition has a low viscosity after the mixing, a low degree of viscosity increase in standing at room temperature, and excellent workability, (2) the composition has satisfactory curability even when no curing accelerator is added, and (3) a cured product is colorless and transparent, has crack resistance, and changes its color to a small extent with long-term light irradiation and heating. The composition is suitable for an encapsulant for a photoelectric conversion element such as a blue LED or white LED. (In the formula, R's each independently represent a hydrogen atom or a methyl group, m represents an integer of 1 to 3, and n represents an integer of 2 to 8.)

摘要翻译： 提供一种包含酸酐（A）和环氧树脂（B））的环氧树脂组合物，其中：（a）环己烷-1,2,4-三羧酸-1,2-酐占50〜90质量％ 酸酐（A）; （b）环氧树脂（B）的脂环族环氧树脂化合物占30〜90质量％，由通式（1）表示的环氧树脂化合物占环氧树脂（B）的10〜50质量％ ; 和（c）酸酐（A）和环氧树脂（B）的含量使得酸酐与环氧树脂的混合当量比为0.4〜0.7，组合物的固化物和光 发光二极管。 环氧树脂组合物具有以下特征。 也就是说，（1）组合物在混合后具有低粘度，在室温下的静置粘度增加低，加工性优异，（2）即使不加入固化促进剂，组合物也具有令人满意的固化性，（ 3）固化产物无色透明，具有抗裂性，并在长时间的光照射和加热下颜色变化很小。 该组合物适用于诸如蓝色LED或白色LED的光电转换元件的密封剂。 （式中，R 3各自独立地表示氢原子或甲基，m表示1〜3的整数，n表示2〜8的整数。）