摘要:
The present invention permits further miniaturization and shortening of a surface acoustic wave device while avoiding the influence of the surface acoustic wave device on the inductance value and performance index (Q value) of the spiral inductor. The chip on which the spiral inductor is formed is flip-chip mounted in a package together with another surface acoustic wave device chip. The package is provided with a hermetically sealed lid. A conductor pattern is formed on a face of the package that opposes the spiral inductor. Further, the overlap between the region of the spiral inductor and the conductor pattern is 7% or less.
摘要:
A surface acoustic wave device includes: a substrate; a pair of reflection electrodes that are formed on the substrate; and drive electrodes that are interposed between the reflection electrodes. In this surface acoustic wave device, the pitches in each of the reflection electrodes vary according to a predetermined variation pattern. With this structure, the suppression on spurious signals and the shape factor (the sharpness of the cut-off region of the pass band) can be improved at the same time.
摘要:
The present invention permits further miniaturization and shortening of a surface acoustic wave device while avoiding the influence of the surface acoustic wave device on the inductance value and performance index (Q value) of the spiral inductor. The chip on which the spiral inductor is formed is flip-chip mounted in a package together with another surface acoustic wave device chip. The package is provided with a hermetically sealed lid. A conductor pattern is formed on a face of the package that opposes the spiral inductor. Further, the overlap between the region of the spiral inductor and the conductor pattern is 7% or less.
摘要:
Improvement on an insertion loss, as well as phase balance, is obtained in surface acoustic wave device. In the surface acoustic wave device, when an aperture length of the electrode fingers of an interdigital transducer for input or an interdigital transducer for output is defined as X, the interdigital transducer for input or the interdigital transducer for output includes two split interdigital transducers respectively including electrode fingers having an aperture length of approximately X/2, and electrodes of respective electrode fingers in the first and second split interdigital transducers are extracted from the two split interdigital transducers, and disposed in such a way as signals in the two outputs or inputs connected to a balanced terminal pair have a phase difference of 180°, and the two split interdigital transducers are connected in series by a common electrode of solid shape, of which electrode width is greater than twice the pitch of the electrode fingers in the two split interdigital transducers, and further the common electrode is connected to the ground potential.
摘要:
The present invention provides a surface acoustic wave device that allows a plurality of surface acoustic wave filters to be formed on a single chip and permits greater miniaturization. The surface acoustic wave device comprises a piezoelectric substrate, a first surface acoustic wave resonator formed on the piezoelectric substrate, and a second surface acoustic wave resonator formed on the piezoelectric substrate in the surface acoustic wave propagation direction of the first surface acoustic wave resonator. The positions in which the first and second surface acoustic wave resonators are formed on the piezoelectric substrate are in an at least partially overlapping relationship in a surface acoustic wave propagation region that is defined by virtually extending the respective openings of the first and second surface acoustic wave resonators. The surface acoustic wave device further comprises a part for dividing the overlap surface acoustic wave propagation region into an upper half and a lower half and for affording the phases of surface acoustic waves that are propagated by the first surface acoustic wave resonator a mutually antiphase relationship in the upper-half region and lower-half region thus divided.
摘要:
A surface acoustic wave device includes: a substrate; a pair of reflection electrodes that are formed on the substrate; and drive electrodes that are interposed between the reflection electrodes. In this surface acoustic wave device, the pitches in each of the reflection electrodes vary according to a predetermined variation pattern. With this structure, the suppression on spurious signals and the shape factor (the sharpness of the cut-off region of the pass band) can be improved at the same time.
摘要:
A surface acoustic wave device is designed such that an inter-digital transducer and a reflector have the same grating cycle. The electrode dye width of the reflector is larger than that of the inter-digital transducer, or the electrode dye width is smaller than the distance between the electrodes by changing at least one of the inter-digital transducer and the reflector. Connecting the thus structured surface acoustic wave devices to a single piezoelectric substrate as resonators in a ladder form produces a surface acoustic wave device for use in a filter.
摘要:
A filter includes a first filter that is connected between an input node and an output node and is a surface acoustic wave filter, and a second filter that is provided between the input node and the output node and is connected in parallel with the first filter. The first filter has a total number N1 of pairs of electrode fingers of interdigital transducers and the second filter having a total number N2 of pairs of electrode fingers of interdigital transducers, in which N1 is greater than N2.
摘要:
A surface acoustic wave device includes a surface acoustic wave resonator. The surface acoustic wave resonator includes comb-like electrodes and reflection electrodes provided on both sides of the comb-like electrodes, and each of the reflection electrodes has at least two different pitches. It is thus possible to suppress the ripple components.
摘要:
There is provided a method of fabricating an electronic device including flip-chip mounting a device chip on a substrate, and supplying solder between adjacent device chips by supplying the solder on the device chips and applying heat and pressure on the solder, and a contact angle of the device chip and the solder is greater than 90° with the solder melted.