公开(公告)号：US5585305A

公开(公告)日：1996-12-17

申请号：US249197

申请日：1994-05-26

申请人： Masato Yamada ,  Takao Takenaka

发明人： Masato Yamada ,  Takao Takenaka

IPC分类号： H01L21/22 ,  H01L21/223 ,  H01L33/00 ,  H01L33/30

CPC分类号： H01L33/305 ,  H01L21/2205 ,  H01L21/2233 ,  H01L33/0062 ,  Y10S148/099

摘要： A method for fabricating a semiconductor device includes the steps of growing a second semiconductor layer on a first semiconductor layer which is highly doped with an impurity such as Zn and diffusing the impurity concurrently with the growing step of the second semiconductor layer from the first semiconductor layer as an impurity source to the second semiconductor layer to have a predetermined carrier concentration profile, by controlling both the diffusing speed of said impurity and the growing speed of said second semiconductor layer by changing the temperature in accordance with a predetermined sequence to have a predetermined carrier concentration profile in the second semiconductor layer.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一半导体层上生长第二半导体层，该第一半导体层高度掺杂有诸如Zn的杂质，并且与第二半导体层的生长步骤同时从第一半导体层扩散杂质 作为第二半导体层的杂质源以通过根据预定的顺序改变温度来控制所述杂质的扩散速度和所述第二半导体层的生长速度，以具有预定的载流子浓度分布，以具有预定的载流子 第二半导体层中的浓度分布。

公开(公告)号：US5459106A

公开(公告)日：1995-10-17

申请号：US310088

申请日：1994-09-22

申请人： Masato Yamada ,  Tadashi Sakurai

发明人： Masato Yamada ,  Tadashi Sakurai

IPC分类号： H01L33/30 ,  H01L33/56 ,  H01L33/62 ,  H01L21/02

CPC分类号： H01L33/44 ,  H01L33/0095 ,  Y10S148/099 ,  Y10S148/163 ,  Y10S438/958

摘要： An AlGaAs chip which has an n-type layer and a p-type layer is immersed in an aqueous solution containing 0.2-0.6 wt. % of ammonia and 25-35 wt. % of hydrogen peroxide to form a primary protective layer, and after drying the AlGaAs chip, the AlGaAs chip is for a second time immersed in an aqueous solution containing 0.2-0.6 wt. % of ammonia and 25-35 wt. % of hydrogen peroxide to form a secondary protective layer.

摘要翻译： 将具有n型层和p型层的AlGaAs芯片浸渍在含有0.2-0.6重量％ 氨的百分比和25-35重量％ ％的过氧化氢以形成主保护层，并且在干燥AlGaAs芯片之后，将AlGaAs芯片第二次浸入含有0.2-0.6wt。 氨的百分比和25-35重量％ ％的过氧化氢以形成二级保护层。

公开(公告)号：US5440384A

公开(公告)日：1995-08-08

申请号：US113189

申请日：1993-08-30

申请人： Masato Yamada ,  Makoto Kawasaki ,  Yutaka Tamura

发明人： Masato Yamada ,  Makoto Kawasaki ,  Yutaka Tamura

IPC分类号： G01R31/26 ,  G01R31/265 ,  H01L21/66 ,  H01L33/30 ,  G01N21/88

CPC分类号： H01L22/24 ,  G01R31/2656 ,  H01L33/0025

摘要： An irradiation light containing a light which wave length is not absorbed by the n-type clad layer, but is absorbed by the p-type active layer, is applied on the wafer for manufacturing light emitting elements with a double-hetero structure of a p-type clad layer, a p-type active layer and an n-type clad layer formed one after another on a semiconductor substrate. Defects are found by detecting the increased photoluminescent light due to generation of a conductivity-type inverted layer such as the n-type inverted layer. When the double-hetero structure is composed of a GaAlAs mixed crystal compound semiconductor, the irradiation light which contains a wavelength range of 600-650 nm is applied. When the defective area is an active layer deficient area, detection is conducted by using the reflection light from the surface of the semiconductor substrate.

摘要翻译： 包含波长不被n型覆盖层吸收但被p型有源层吸收的光的照射光被施加在用于制造具有p的双异质结构的发光元件的晶片上 型覆盖层，在半导体衬底上依次形成的p型有源层和n型覆盖层。 通过检测由于产生诸如n型反转层的导电类型反转层而增加的光致发光，可以发现缺陷。 当双异质结构由GaAlAs混合晶体化合物半导体组成时，应用包含600-650nm波长范围的照射光。 当缺陷区域是有源层缺陷区域时，通过使用来自半导体衬底的表面的反射光进行检测。

公开(公告)号：US5401684A

公开(公告)日：1995-03-28

申请号：US984920

申请日：1992-12-02

申请人： Masato Yamada ,  Takao Takenaka ,  Shinji Orimo

发明人： Masato Yamada ,  Takao Takenaka ,  Shinji Orimo

IPC分类号： H01L21/208 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40

CPC分类号： H01L33/0025 ,  H01L33/0062 ,  Y10S148/101 ,  Y10S148/135 ,  Y10S438/955

摘要： Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga.sub.1-x Al.sub.x As compound semiconductor single crystalline thick-film layer having a first AlAs mole fraction and a low Al containing and oxidation-delaying Ga.sub.1-y Al.sub.y As compound semiconductor single crystalline thin film serving as a surface protective layer and having a second AlAs mole fraction to be sequentially grown on a GaAs crystal substrate. The method comprises the step of causing the thick-film layer and the thin film to be sequentially grown on the GaAs crystal substrate. The GaAs crystal substrate is removed after sequential epitaxial growth of the thick-film layer and thin film on the GaAs crystal substrate.

摘要翻译： 公开了一种发光半导体器件基板及其制造方法。 通过使具有第一AlAs摩尔分数的Ga 1-x Al x As化合物半导体单晶厚膜层和作为表面保护层的低Al含量和氧化延迟Ga 1-y Al y As化合物半导体单晶薄膜制备基板，并具有 在GaAs晶体衬底上顺序生长的第二AlAs摩尔分数。 该方法包括使厚膜层和薄膜依次生长在GaAs晶体基板上的步骤。 在GaAs晶体衬底上的厚膜层和薄膜的顺序外延生长之后，去除GaAs晶体衬底。

公开(公告)号：US5254172A

公开(公告)日：1993-10-19

申请号：US854037

申请日：1992-03-19

申请人： Toshio Otaki ,  Hitoshi Ikeda ,  Masato Yamada ,  Takao Takenaka

发明人： Toshio Otaki ,  Hitoshi Ikeda ,  Masato Yamada ,  Takao Takenaka

IPC分类号： F27B7/20 ,  C30B19/06 ,  H01L21/00 ,  H01L21/208 ,  H01L21/22 ,  H01L21/31 ,  B08B3/04 ,  B05D7/24

CPC分类号： H01L21/67023 ,  C30B19/061

摘要： An semiconductor substrate processing apparatus of the type including a furnace tube associated with a fluid supply unit and a fluid discharge unit, wherein the furnace tube is rotatably supported by pairs of confronting rollers and rotated by a motor under the control of a controller in order to achieve various kinds of processing of semiconductor substrates within the furnace tube. With this rotatable furnace tube, the apparatus exhibits high radial temperature uniformity and is able to prevent deformation of the furnace tube.

公开(公告)号：US5232284A

公开(公告)日：1993-08-03

申请号：US884248

申请日：1992-05-11

申请人： Shunji Egawa ,  Masato Yamada

发明人： Shunji Egawa ,  Masato Yamada

IPC分类号： A61B5/01 ,  G01J1/44 ,  G01J5/00 ,  G01J5/04 ,  G01J5/06 ,  G01J5/08 ,  G01K13/00

CPC分类号： G01J5/04 ,  G01J5/02 ,  G01J5/026 ,  G01J5/049 ,  G01J5/14 ,  G01J2001/4433 ,  G01J2005/0048 ,  G01J2005/068

摘要： A radiation clinical thermometer has a probe with an optical guide and an infrared sensor, a detection signal processing section, a body temperature operating section, and a display unit. A filter correction system for setting a correction value based on the transmission wave length characteristics of a filter is also provided. The body temperature operating section receives infrared data, temperature sensitive data, which takes into account the temperature equilibrium between the optical guide and the infrared sensor, and a correction value from the filter correction section so as to calculate body temperature data.

摘要翻译： 辐射体温计具有带有光导和红外传感器的探头，检测信号处理部，体温操作部和显示部。 还提供了一种用于基于滤波器的传输波长特性设置校正值的滤波器校正系统。 体温操作部分接收考虑了光导和红外传感器之间的温度平衡的红外数据，温度敏感数据和来自滤波器校正部分的校正值，以便计算体温数据。

公开(公告)号：US5179412A

公开(公告)日：1993-01-12

申请号：US789887

申请日：1991-11-12

申请人： Masato Yamada ,  Junji Shirakawa ,  Kazuo Uno ,  Kimio Nakamura

发明人： Masato Yamada ,  Junji Shirakawa ,  Kazuo Uno ,  Kimio Nakamura

IPC分类号： G03G21/10 ,  G03G15/00 ,  G03G15/16 ,  G03G21/00

CPC分类号： G03G15/1635

摘要： A transfer unit for a xerographic printing machine including at least two rollers and an endless belt supported by the rollers. A frame member supports the rollers. A photoreceptor is disposed adjacent to the endless belt, and a charging means is disposed opposite to the photoreceptor so that the endless belt is locate between the charging means and the photoreceptor. Pressure in the space within the transfer unit, which is surrounded by the endless belt and the frame member and contains the endless belt charging means disposed therein, is slightly higher than atmosphere pressure outside the transfer unit.

摘要翻译： 一种用于静电印刷机的转印单元，其包括至少两个辊和由辊支撑的环形带。 框架构件支撑辊。 感光体邻近环形带设置，并且充电装置设置成与感光体相对，使得环形带位于充电装置和感光体之间。 由环形带和框架构件包围的传送单元内的空间中的压力，包含设置在其中的环形带充电装置，稍高于转印单元外部的气氛压力。

公开(公告)号：US5148224A

公开(公告)日：1992-09-15

申请号：US693649

申请日：1991-04-30

申请人： Masato Yamada ,  Junzi Shirakawa ,  Kazuo Uno

发明人： Masato Yamada ,  Junzi Shirakawa ,  Kazuo Uno

IPC分类号： G03G5/10 ,  G03G5/147 ,  G03G15/16

CPC分类号： G03G15/1655 ,  G03G5/10 ,  G03G5/147

摘要： In an electrophotographic printing machine, the endless belt has a thin protective layer on each of the inner and outer surfaces thereof which is high in mold release characteristic and effective in minimization of the deterioration in electrical characteristic of the endless belt.

摘要翻译： 在电子照相印刷机中，环形带在其内表面和外表面之间具有薄的保护层，其具有高的脱模特性，并且有效地使环形带的电特性的劣化最小化。

公开(公告)号：US5024533A

公开(公告)日：1991-06-18

申请号：US522337

申请日：1990-05-10

申请人： Shunji Egawa ,  Masato Yamada

发明人： Shunji Egawa ,  Masato Yamada

IPC分类号： A61B5/00 ,  A61B5/01 ,  G01J1/44 ,  G01J5/00 ,  G01J5/04 ,  G01J5/06 ,  G01J5/08 ,  G01J5/10 ,  G01J5/16 ,  G01K13/00

CPC分类号： G01J5/02 ,  G01J5/026 ,  G01J5/04 ,  G01J5/049 ,  G01J5/08 ,  G01J5/0818 ,  G01J5/0875 ,  G01J5/16 ,  G01J2001/4433 ,  G01J2005/068

摘要： A radiation clinical thermometer has a probe with an optical guide and an infrared sensor, a detection signal processing section, a body temperature operating section, and a display unit. A filter correction system for setting a correction value based on the transmission wavelength characteristics of a filter is also provided. The body temperature operating section receives infrared data, temperature-sensitive data, which takes into account the temperature equilibrium between the optical guide and the infrared sensor, and a correction value from the filter correction section so as to calculate body temperature data.

公开(公告)号：US09127629B2

公开(公告)日：2015-09-08

申请号：US13318527

申请日：2011-03-31

申请人： Masato Yamada ,  Yoichi Kobane ,  Naofumi Adachi ,  Tsukasa Yamashita

发明人： Masato Yamada ,  Yoichi Kobane ,  Naofumi Adachi ,  Tsukasa Yamashita

IPC分类号： F02M61/10 ,  F02M61/00 ,  F02M47/02 ,  F02M61/16

CPC分类号： F02M47/027 ,  F02M47/025 ,  F02M61/161 ,  F02M2547/008

摘要： A fuel injection device (100) includes a control body (40) provided with an injection hole (44), a nozzle needle (60) that opens or closes the injection hole (44), a pressure control chamber (53) controlling a movement of the nozzle needle (60), an inflow channel (52) through which high-pressure fuel is introduced to the pressure control chamber (53), an outflow channel (54) through which the fuel from the pressure control chamber (53) is discharged, and a floating plate (70) that opens or closes the inflow channel (52). In the fuel injection device (100), the control body (40) includes a cylinder (56) defining the pressure control chamber (53) in a radial direction thereof, and an inner wall portion (56a) of the cylinder (56) includes a communication groove (57a) which causes an inflow chamber (53a) that is provided within the pressure control chamber (53) at a side of the inflow channel (52) relative to the floating plate (70), to communicate with a back pressure chamber (53b) that is provided within the pressure control chamber (53) at a side of the nozzle needle (60) relative to the floating plate (70).

摘要翻译： 燃料喷射装置（100）包括设置有喷射孔（44）的控制体（40），打开或关闭喷射孔（44）的喷嘴针（60），控制运动的压力控制室 所述喷嘴针（60）的流入通道（52），将高压燃料引入所述压力控制室（53）的流入通道（52），来自所述压力控制室（53）的燃料通过所述流出通道 以及打开或关闭流入通道（52）的浮板（70）。 在燃料喷射装置（100）中，控制体（40）包括在径向上限定压力控制室（53）的气缸（56），气缸（56）的内壁部（56a） 连通槽（57a），其使得在所述压力控制室（53）内设置在所述流入通道（52）的相对于所述浮板（70）的一侧的流入室（53a）与背压 在所述压力控制室（53）内设置在所述喷嘴针（60）的相对于所述浮板（70）的一侧的室（53b）。